JP2002270629A - Electronic component and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of SBB method which uses wire bonding of inferior productivity for forming bumps in an electronic component and each formed bump by the wire bonding is in a port-belly shape, composed of a base and a smaller top than the base to result in that the transfer of adhesives to the bump being unstable, and hence the connection of a semiconductor device with a support base being apt to be unstable. SOLUTION: A bump 212 comprises a base 103 fixed to a substrate electrode 315, provided at a semiconductor device 101 and a top 104, formed at the substrate electrode 315 on the base 103 and has an outside diameter 105 of the top end of the top 104 at the electrode 315 larger than the outside diameter of the top 104 at the base 103. The bump holds surely a conductive adhesive with the top 104 to surely connect the semiconductor device 101 to the substrate electrode 315 and turning them into a mounting structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, an electronic component having a bump on a semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, in the development of electronic components, mainly semiconductor components, the direction of miniaturization has been increasingly promoted, as typified by the words of light, thin and small, in accordance with market requirements. As electronic components have been miniaturized in response to these demands, junctions connecting the electronic components have also been miniaturized and narrowed in pitch.

By the way, as a mounting method of an IC chip representing a semiconductor device, not only a mounting method using a conventional lead but also a BGA (Ball Grid Array), a CSP (Chip)
A mounting form using external connection electrodes arranged in a two-dimensional array called a “scale package” is used. These are the QFPs (Quad Flat packags) conventionally used.
Compared with e), there is an advantage that the size of the semiconductor device is significantly reduced because the external connection electrodes are on the back surface of the package. Also, the pitch of the external connection electrodes is 0 in QFP.
It is relatively rough, such as 1.0 mm or 0.8 mm, compared to being set to 3 mm or 0.5 mm, and is easy to mount. Therefore, it is useful as a new mounting body.

[0004] However, mounting using BGA or CSP uses cream solder or solder balls, so that connection reliability is excellent. However, when the pitch between the external connection electrodes is made fine, there is a problem in that the solder may spread due to warpage of the substrate during reflow and the like, and there is a risk of short-circuiting with the adjacent one.

Therefore, as a method of mounting a semiconductor device on a substrate, an SBB (Stud Bump Bonding) method (Japanese Patent Publication No.
0726, JP-A-4-335542). Here, a method for forming bumps on a semiconductor device by the SBB method and a method for mounting this semiconductor device on a substrate will be described with reference to FIGS.

[0006] This SBB uses a wire bonding method, and as shown in FIG.
Copper wire passed through 004 (hereinafter referred to as “Au wire”) 1
Heat energy is applied to the tip of 005 to melt the Au wire 1005 to form a ball 1006. This ball 1006
Are formed by gas flame or electrostatic discharge.

As shown in FIG. 10B, the ball 1006 thus formed is connected to the electrode pad 100 of the semiconductor device 1001.
2 is fixed by thermocompression bonding or ultrasonic vibration via a capillary 1003. Next, as shown in FIG. 10C, while the Au wire 1005 is passed through the hole 1004 of the capillary 1003, the capillary 1003 is moved to a loop-shaped orbit as shown in FIG. As shown in ()), the Au wire 1005 is left in an inverted U-shape on the ball 1006 fixed to the electrode pad, and the capillary 1003 is lowered to cut the Au wire 1005.

Through the above steps, a two-stage projecting contact is formed on the electrode pad 1002 of the semiconductor device 1001.

After protruding contacts are formed on all the electrode pads 1002 of the semiconductor device 1001 in this manner, FIG.
As shown in FIG. 11, the semiconductor device 1001 is pressed against a material 1110 having a rough surface to
09.

The bump 1109 formed at this time has a two-stage Dharma shape composed of a pedestal portion 900 and a top portion 901 smaller than the pedestal portion 900, as shown in FIG. And the surface is formed roughly.

Next, as shown in FIG.
The semiconductor device 1001 formed with 109 is brought into contact with the conductive adhesive bonding layer 1111 using phenoxy resin as a binder formed on the supporting base material 1112, thereby bonding the conductive adhesive to the top 901 of the bump 1109. Transfer the layer 1111.

As described above, the semiconductor device 1001 in which the conductive adhesive bonding layer 1111 is formed on the bump 1109 on the electrode pad 1102 is connected to the conductive pattern 1113 of the support base 1112 as shown in FIG. The semiconductor device 1001 and the supporting base material 1112 are electrically connected by being aligned and fixed by thermosetting or the like.

[0013]

The above-mentioned conventional SBB method has excellent electrical connection reliability between parts and is suitable for fine pitch. However, since the wire bonding method is used in forming the two-step projection, there is a problem that productivity is poor.

Further, the shape of the bump 1109 formed by the wire bonding method is a two-stage Dharma shape composed of the pedestal portion 900 and the top 901 smaller than the pedestal portion 900. There is a problem that the transfer of the adhesive or the solder paste becomes unstable, so that the electrical connection between the semiconductor device 1001 and the support base 1112 tends to be unstable.

Accordingly, an object of the present invention is to provide an electronic component having a bump excellent in transferability of a conductive adhesive and a method of manufacturing the same.

[0016]

An electronic component according to the present invention includes a pedestal portion fixed to an electrode provided on the connection component side, and a top formed integrally with the connected component side of the pedestal portion. A bump for electrically connecting the connection component and the component to be connected with the conductive adhesive adhered to the top, and an outer diameter of a tip of the top of the bump on the component to be connected side. However, it is formed larger than the outer diameter of the pedestal portion at the top.

Also, the outer diameter of the tip of the bump on the connected component side at the top of the bump is formed in a substantially truncated cone shape which is larger than the outer diameter of the pedestal side.

In the electronic component having the above configuration, when the adhesive is transferred to the bumps, the outer diameter of the tip at the top is larger than the outer diameter of the bottom, so that the adhesive once transferred can be reliably applied. It is held on the top, and the connection component and the connection target component are reliably electrically connected.

The electronic component includes a pedestal portion fixed to an electrode provided on the connection component side, and a top portion integrally formed on the connected component side of the pedestal portion, and a conductive adhesive is applied to the top portion. Having a bump for electrically connecting the connecting component and the connected component in a state of being attached to the first conductive film forming layer on the surface of the electrode and the connecting component; and Forming a first hole for forming a pedestal portion of a bump at an electrode-facing portion of the first conductive film forming layer so as to expose the first conductive film forming layer; Forming a first conductive film by attaching a conductive material, and forming a pedestal portion in the first hole by removing the conductive material remaining in the first hole while leaving the conductive material attached to the first hole And the surface of the first conductive film forming layer and the surface of the pedestal portion The step of applying a second conductive film forming layer, and exposing the surface of the pedestal portion, the outer diameter of the tip of the connected component side at the top of the bump is smaller than the outer diameter of the pedestal portion at the top. A step of forming a second hole having an inclined wall surface so as to be larger at a position facing the pedestal portion of the second conductive film forming layer, and applying a conductive material to the surface of the second hole and the second conductive film forming layer. A step of forming a second conductive film by attaching, and a step of forming a top in the second hole by removing the conductive material of the other portion leaving the conductive material attached to the second hole, It is manufactured by a step of removing the first conductive film forming layer and the second conductive film forming layer.

In the above manufacturing method, the first conductive film forming layer and the second conductive film forming layer are used as insulating layers, and when forming the first conductive film and the second conductive film, a conductive material is adhered by plating. When removing the first conductive film and the second conductive film, the conductive material is removed by etching, and after forming the top, the first conductive film forming layer and the second conductive film forming layer are separated.

According to these forming methods, a large number of bumps are formed at once, since the outer diameter of the tip on the connected part side at the top is larger than the outer diameter of the pedestal at the top. Excellent electronic component productivity.

Further, the electronic component of the present invention comprises a pedestal portion fixed to an electrode provided on the connection component side, and a top formed integrally with the connected component side of the pedestal portion, and a conductive adhesive Has a bump for electrically connecting the connection component and the connected component in a state where the connection portion is attached to the top portion, and the top portion expands in diameter from one side of the pedestal portion toward the connected component side. A holding concave portion for holding the conductive adhesive is formed on the other side while being formed at an angle.

The bump in the electronic component having the above-described structure has a two-stage shape of a pedestal portion and a top, and has a holding concave portion for holding the conductive adhesive, so that the conductive adhesive is transferred to the bump. In this case, a sufficient transfer amount is secured, and the connection component and the connection target component are reliably electrically connected.

Further, since the conductive adhesive spreads only on one side and hardly spreads on the other side by forming a plurality of bumps in the same direction, the conductive adhesive is adjacent to each other when the connection component and the connection target component are electrically connected. It is possible to prevent the conductive adhesives attached to the bumps from coming into contact with each other and causing a short circuit.

Further, the electronic component includes a pedestal portion fixed to the electrode provided on the connection component side, and a top formed integrally with the connected component side of the pedestal portion, and a conductive adhesive is provided on the top. Applying a conductive film forming layer to the surface of the electrode and the connecting component to form a bump for electrically connecting the connecting component and the connected component in a state of being attached to the base, A hole whose wall is inclined such that the outer diameter of the tip of the connected component side at the top of the bump is larger than the outer diameter of the pedestal side at the top of the bump is exposed to the surface of the conductive film forming layer. A step of forming a conductive film by forming a conductive material on the surface of the hole and the conductive film forming layer;
A step of forming a pedestal portion and a top portion for the hole by removing a portion of the conductive material provided in the hole and removing the other portion of the conductive material.

In the above formation method, the conductive film forming layer is used as an insulating layer, the conductive film is removed by etching, and the conductive film forming layer is peeled off after the top is formed.

According to this forming method, a large number of bumps are formed at once, since the outer diameter of the tip portion on the connected component side at the top is larger than the outer diameter of the pedestal portion at the top. Excellent productivity.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments 1 to 3 of the present invention will be described below with reference to the drawings. (Embodiment 1) FIGS. 1 to 3 show Embodiment 1 of the present invention, and FIG. 1 shows a cross-sectional shape of a bump 212 in an electronic component of this embodiment.

The bumps 212 are connected to the semiconductor device 101.
(An example of connecting parts) A frustum-shaped pedestal 103 connected to an external connection terminal 102 (electrode) provided on the side,
And a top portion 104 formed on the side of the substrate electrode 315 (an example of a part to be connected) described later, and a conductive adhesive is attached to the top portion 104. ,
The semiconductor device 101 and the substrate electrode 315 are electrically connected.

As described above, the bump 212 has a convex shape having a two-stage shape of the pedestal portion 103 and the top portion 104, and has a tip portion of the top portion 104, that is, an outer diameter 105 on the substrate electrode 315 side.
However, it is formed larger than the outer diameter 106 on the pedestal portion 103 side of the top portion 104.

FIGS. 2A to 2M are process diagrams showing a method for manufacturing an electronic component according to the first embodiment. Hereinafter, this step will be described with reference to the drawings.

First, as shown in FIG. 2A, a semiconductor device 101 provided with electrodes, that is, a plurality of external connection terminals 102,
First conductive film forming layer (plating resist as insulating layer) 20
Form 7a. The first conductive film forming layer 207a may be a dry film type or a liquid resist type.

Next, as shown in FIG. 2B, a first hole 208 having a truncated cone shape is formed in the first conductive film forming layer 207a on the external connection terminal 102, and the surface of the external connection terminal 102 is formed. Expose.

The shape of the first hole 208 is formed such that the bottom area on the external connection terminal 102 side is smaller than the bottom area on the opposite side. In other words, when processing the first hole 208, the external connection terminal 10 is formed by using a laser.
The bottom area on the two sides is naturally smaller than the bottom area on the opposite side, so no special equipment or method is required. In addition, if the first conductive film forming layer 207a is formed using a photosensitive material, the first hole 208 can be easily processed by a photo method.

Next, as shown in FIG. 2C, the first conductive film 20 is placed on the surface of the first hole 208 and the first conductive film forming layer 207a.
9a (copper, aluminum, nickel or the like is used) is formed. In the first embodiment, copper is used as the conductive material, and is formed by plating.

Next, as shown in FIG. 2 (d), an etching resist 210 is formed on the first conductive film 209a at a position facing the first hole 208, and then as shown in FIG. 2 (e). The first conductive film 209a other than the portion where the etching resist 210 is formed
Is removed by etching, and then, as shown in FIG. 2 (f), the etching resist 210 is removed. As a result, the pedestal portion 103 of the bump 212 is formed in the first hole 208.

Next, as shown in FIG. 2 (g), the second conductive film forming layer (plating resist) 207b is
7a and on the pedestal portion 103 formed in the first hole 208. Then, as shown in FIG. 2 (h), a frustum-shaped second hole 211 smaller than the first hole 208 is formed so as to expose the surface of the pedestal portion 103.

At this time, like the first hole 208, the second hole 211 is formed so that the bottom area on the side of the external connection terminal 102 is smaller than the bottom area on the opposite side. The wall surface is an inclined surface whose diameter is increased toward the substrate electrode 315.

When the second hole 211 is formed, for example, by using a laser in the same manner as described above, a special device or method is unnecessary.

Next, as shown in FIG. 2I, a second conductive film 209b is formed by applying a conductive material to the second hole 211 and the surface of the second conductive film forming layer 207b by plating. Then, as shown in FIG. 2 (j), the etching resist 210 is
The second conductive film 209b is formed at a position facing the second hole 211.

Subsequently, as shown in FIG. 2K, the conductive material other than the portion where the etching resist 210 is formed is removed by etching, and as shown in FIG. 2L, the etching resist 210 is removed. By the top of the second hole 211
Form 104.

Finally, as shown in FIG. 2 (m), the first conductive film forming layer 207a and the second conductive film forming layer 207b are peeled off, so that the above-described pedestal portion 103 and top 104 are formed in two steps. The outer diameter 105 of the tip of the top 104 is the outer diameter 1 of the base 103 side.
An electronic component having bumps 212 larger than 06 is manufactured.

The semiconductor device 101 formed by arranging the plurality of bumps 212 in this manner is placed on the conductive adhesive bonding layer 313 with the bumps 212 facing downward as shown in FIG.
(It may be a solder bonding layer) is positioned above the substrate 314 to which the solder bonding layer is applied, and as shown in FIG.
The semiconductor device 101 is lowered so that the entire 104 is immersed in the conductive adhesive bonding layer 313, and then the semiconductor device 101 is pulled upward as shown in FIG.

Through this series of steps, the conductive adhesive (conductive adhesive bonding layer 313) is transferred onto the tops 104 of the plurality of bumps 212 at once, and an electrode structure composed of the bumps 212 and the conductive adhesive is formed. Is done.

The shape of the bump 212 is such that the outer diameter 105 at the tip of the top 104 is larger than the outer diameter 106 at the bottom, so that the transferred conductive adhesive is surely formed at the top 104 of the bump 212. The electrode structure is held.

Thereafter, as shown in FIG.
Align the 12 and the terminal electrode 316 on the substrate electrode 315 side,
The semiconductor device 101 is mounted on the substrate electrode 315, and the conductive adhesive is cured to electrically connect the semiconductor device 101 and the electronic device, thereby forming a mounted electronic component.

As shown in FIG. 3E, the electrode structure including the bumps 212 may be sealed with a sealing resin 317 as needed.

As described above, in the electronic component according to the first embodiment of the present invention, since each bump 212 has a shape in which the outer diameter 105 at the tip of the top 104 is larger than the outer diameter 106 at the bottom, the conductive adhesive The semiconductor device 101 and the substrate electrode 3
15 is a mounted body that is securely connected.

FIG. 3F is an enlarged view of the electrode structure of the electronic component according to the first embodiment. The electrode structure has a bump 212 and a conductive adhesive, and the conductive adhesive has a two-stage convex shape. Are formed only on the bumps 212 of FIG. This allows bump 2
Since the joints can be formed at the pitch of 12, a fine pitch electrode structure can be easily obtained.

Also, in the first embodiment, the number of bumps 212 can be formed in a single step as described above without using a wire bonding method in forming the bumps 212, thereby improving the productivity of electronic components. Can be done.

In the first embodiment, since the bumps 212 are formed by using the plating method, as shown in FIG.
The second conductive film 209b opposed to 04 tends to have a shape with a concave center due to slower growth than other portions,
Therefore, the top portion 104 has a concave shape at the center, but in this configuration, the contact pressure applied to the terminal electrode 316 acting on the top portion 104 of each bump 212 increases, and the top portion 104 and the terminal electrode 316
Crush the conductive adhesive between
4 compared to the case where the surface of the terminal electrode 316 is flat.
Electrical connection between 1 and substrate electrode 315 can be further ensured.

In the first embodiment, the semiconductor device 101 and the substrate electrode 315 are connected by transferring a conductive adhesive to the bump 212, but mounting may be performed by reflow soldering using a solder paste.

(Second Embodiment) Next, a second embodiment will be described with reference to FIGS. FIG. 4 shows the second embodiment.
3 shows a cross-sectional shape of a bump 212 in the electronic component of FIG. FIG.
(a)-(i) is a process drawing showing a method for manufacturing an electronic component in the second embodiment. Embodiment 2 will be described below with reference to the drawings.

First, as shown in FIG.
A conductive film 209 is formed so as to cover the surface of 01 and the surface of the external connection terminal 102 provided thereon. The conductive film 209 was formed by a plating method using copper as in Embodiment 1.

Next, as shown in FIG. 5B, a first conductive film forming layer (plating resist) 207a is formed on the conductive film 209. The first conductive film forming layer 207a may be a dry film type or a liquid resist type.

Next, as shown in FIG. 5C, a first hole 208 is formed in the first conductive film forming layer 207a on the external connection terminal 102, and a conductive film 209 covering the external connection terminal 102 is formed. Expose.

The first hole 208 is processed so that the bottom area on the side of the external connection terminal 102 is smaller than the bottom area on the opposite side. That is, when the first hole 208 is processed, the bottom area on the side of the external connection terminal 102 is naturally smaller than the bottom area on the opposite side by using a laser, so that a special device or method is not required. Further, if the first conductive film forming layer 207a is formed using a photosensitive material, the first hole 208 can be easily formed by a photo method.
Can also be processed.

Next, as shown in FIG.
Apply conductive material to 08 (using plating method)
The pedestal 103 of the bump 212 is formed.

Subsequently, as shown in FIG.
A second conductive film forming layer 207b is formed on the surface of the substrate 03 and the surface of the first conductive film forming layer 207a, and as shown in FIG.
A second hole 211 smaller than the first hole 208 is formed in a portion of the second conductive film forming layer 207b facing the pedestal portion 103 to expose the surface of the pedestal portion 103.

Next, as shown in FIG. 5 (g), the top 104 of the bump 212 is formed in the second hole 211 by plating. At this time, the surface of the top 104 is formed so as to be convex toward the center. Subsequently, as shown in FIG. 5H, the first conductive film forming layer 207a and the second conductive film forming layer 207b are separated.

Finally, as shown in FIG. 5I, by removing a part of the conductive film 209 formed first by etching, a convex shape having a two-stage shape of the pedestal 103 and the top 104 is obtained.
Further, a plurality of bumps 212 are formed in which the outer diameter 105 at the tip of the top 104 is larger than the outer diameter 106 at the bottom.

Although not shown, as in the first embodiment, the semiconductor device 101 having the plurality of bumps 212 arranged side by side is mounted on the conductive adhesive bonding layer with the bumps 212 facing downward. The semiconductor device 1 is positioned above the substrate 314 on which the solder bonding layer 313 (which may be a solder bonding layer) is applied, and the entire top 104 of the bump 212 is immersed in the conductive adhesive bonding layer 313.
By lowering the semiconductor device 101 and then lifting the semiconductor device 101 upward, the conductive adhesive is transferred to the tops 104 of the plurality of bumps 212 at once, and an electronic component is manufactured.

Then, the bump 212 of this electronic component is
The outer diameter 105 at the tip of the top 104 is equal to the outer diameter 10 at the bottom.
Since the shape is larger than 6, the transferred conductive adhesive is securely held at the top 104 of the bump 212.

Finally, each bump 212 and the terminal electrode 316 on the substrate electrode 315 side are aligned, and the semiconductor device 10
1 is mounted, and the conductive adhesive is cured to electrically connect the two, thereby manufacturing a mounted body.

In the second embodiment, at the time of forming the bump 212, a conductive material is applied only to the first hole 208 and the second hole 211 by using a plating method, and as shown in FIG. Department
Although the bump 212 was formed so that the central portion of the 104 protruded, the contact pressure acting on the central portion of the apex 104 also increased in this configuration, and the conductive adhesive between the apex 104 and the terminal electrode 316 was formed. Crushing the semiconductor device 101
And the substrate electrode 315 can be electrically connected.

In the first embodiment, the first hole 208 and the second hole 211, the first conductive film forming layer 207a and the second conductive film forming layer 207b are formed, and the first hole 208 and the second hole 211 are formed. Although the conductive material other than the opposing portion was removed, in the second embodiment, the bump 212 is formed by attaching the conductive material only to the first hole 208 and the second hole 211, so that the conductive material is removed. There is no need, and therefore, the productivity of the electronic component is improved as compared with the first embodiment. Other functions and effects are the same as those in the first embodiment, and a description thereof will not be repeated.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIGS. FIG.
Shows the cross-sectional shape of the bump 212 in the electronic component according to the third embodiment. The bump 212 has a substantially L-shaped cross section including a two-stage shape including a pedestal portion 603 and a top portion 604.

FIGS. 7A to 7G are process diagrams showing a method for manufacturing an electronic component according to the third embodiment. Hereinafter, the manufacturing method will be described with reference to the drawings.

First, as shown in FIG. 7A, a semiconductor device 101 provided with a plurality of external connection terminals 102 is provided with a conductive film forming layer 20.
7 and the external connection terminal 10 is formed as shown in FIG.
A truncated conical hole 208 is formed in the conductive film forming layer
Is formed, and the surface of each external connection terminal 102 is exposed.

Next, as shown in FIG. 7C, a conductive material is attached to the conductive film forming layer 207 and each hole 208 to form a conductive film 209. Subsequently, as shown in FIG. 7D, an etching resist 210 is partially formed in a part of the conductive film 209 facing the holes 208 in a circumferential direction of each hole 208.

Subsequently, as shown in FIG. 7E, the conductive material other than the portion where the etching resist 210 is formed is removed by etching, and as shown in FIG. 7F, the etching resist 210 is removed. Finally, as shown in FIG. 7G, by peeling the conductive film forming layer 207, an electronic component having a plurality of bumps 212 is formed.

The shape of the bump 212 is a two-stage shape consisting of a pedestal portion 603 and a top portion 604, and has a substantially cross-sectional shape having a holding recess 604a for holding a conductive adhesive on the other side of the pedestal portion 603.
Any shape may be used as long as it is L-shaped.

The shape of the bumps 212 is determined by the contact area between the etching resist 210 and the conductive film 209. As shown in FIGS.
Is formed in a required shape according to the case. Note that FIG. 8 is arranged in ascending order of the contact area between the etching resist 210 and the conductive film 209.

Although not shown in the drawings, the semiconductor device 10
A process for connecting the substrate electrode 315 to the substrate 1 will be described.

That is, the semiconductor device 101 on which the plurality of bumps 212 are formed is placed on a substrate coated with a conductive adhesive bonding layer (or a solder bonding layer) 313 with the bumps 212 facing downward. And bump 2
The semiconductor device 101 is lowered so that the entire top 604 of the semiconductor device 12 is immersed in the conductive adhesive bonding layer 313, and the semiconductor device 101 is pulled up.

In this series of steps, the conductive adhesive (conductive adhesive bonding layer 313) is transferred onto the tops 604 of the plurality of bumps 212 at one time, and the semiconductor device as shown in FIG.
As shown in FIG. 9B, each of the bumps has an electrode structure of 101.
The semiconductor device 101 is mounted on the substrate electrode 315 by aligning the 212 and the terminal electrode 316 on the substrate electrode 315 side, and the conductive adhesive is cured to electrically connect the two, thereby manufacturing a mounted body. .

Since the conductive adhesive is transferred to the tops 604 of the plurality of bumps 212 in one process, the productivity is excellent.

This electrode structure is an electrode structure composed of the bump 212 and a conductive adhesive. The conductive adhesive (or the solder bonding layer) is a two-stage convex bump 212 with the top 604 as the center. Is formed only. This allows
Bonding portions can be formed at the pitch of the bumps 212, and thus a fine pitch electrode structure can be obtained.

According to the third embodiment, when the conductive adhesive is transferred to the bumps 212, the bumps 212
In addition to the two-stage shape of 3 and the top 604, the holding recess 604a for holding the conductive adhesive ensures a sufficient amount of conductive adhesive transferred to the bump 212. Therefore, the semiconductor device 101 and the substrate electrode 315 can be reliably connected.

Further, if the shape of each of the bumps 212 is L-shaped in section and these bumps 212 are formed in the same direction, the conductive adhesive can be connected to one side when the semiconductor device 101 and the substrate electrode 315 are connected. Therefore, the conductive adhesives attached to the adjacent bumps 212 can be prevented from coming into contact with each other and causing a short circuit.

In each of the above embodiments, the semiconductor device 10
Although the bump 212 is formed on one side, the present invention is not limited to this, and the electronic component may be manufactured by forming the bump 212 having the above-described configuration on the substrate electrode 315 side.

In each of the above embodiments, the bump 212 is formed on the semiconductor device 101 to be an electronic component. However, the present invention is not limited to this. Needless to say, electronic components may be provided in devices other than the device 101. In any case, the same operation and effect as those of the above embodiments can be obtained.

[0083]

As is apparent from the above description, the present invention provides a pedestal portion fixed to an electrode provided on a connecting component side, and a top formed integrally with the connected component side of the pedestal portion. An electronic component having a bump formed such that the outer diameter of the tip on the connected component side at the top is larger than the outer diameter of the pedestal side at the top, so that the conductive property is higher at the top of the bump. The adhesive is securely held, so that the connection component and the connected component can be reliably electrically connected.

Further, a conductive film forming layer is applied to the surface of the electrode, a hole is formed in the conductive film forming layer at a position facing the electrode so as to expose the surface of the electrode, and a conductive material is attached to the hole. Since the pedestal portion and the top portion are formed in this manner, a large number of bumps can be formed at once in the manufacture of an electronic component, and therefore, the productivity of the electronic component can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view of a bump in an electronic component according to a first embodiment of the present invention.

FIG. 2 is a process chart showing a method for manufacturing an electronic component.

FIG. 3 is a process chart showing a method for connecting a semiconductor device and a substrate electrode.

FIG. 4 is a sectional view of a bump in an electronic component according to a second embodiment of the present invention.

FIG. 5 is a process chart showing a method for manufacturing an electronic component.

FIG. 6 is a sectional view of a bump in an electronic component according to a third embodiment of the present invention.

FIG. 7 is a process drawing showing a method for manufacturing an electronic component.

FIG. 8 is a perspective view showing an example of the shape of a bump in the electronic component.

FIG. 9 is a cross-sectional view showing an attached state of a conductive adhesive transferred to a bump of the electronic component.

FIG. 10 is a process chart showing a method of forming bumps on an electronic component by the conventional SBB method.

FIG. 11 is a process drawing showing a method of connecting the semiconductor device and the substrate electrode.

[Explanation of symbols]

 101 Semiconductor device 102 External connection terminal 103 Pedestal 104 Top top 207a First conductive film forming layer 207b Second conductive film forming layer 208 First hole 209a First conductive film 209b Second conductive film 210 Etching resist 211 Second hole 212 Bump 313 Conductive adhesive bonding layer 315 Board electrode 316 Terminal electrode

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroki Takezawa 1006 Kadoma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Takashi Kitae 1006 Kadoma Kadoma, Kadoma City, Osaka Pref. 72) Inventor Tosaku Nishiyama 1006 Kadoma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F term (reference) 5F044 KK17 LL07

Claims (7)

[Claims] 1. A pedestal portion fixed to an electrode provided on a connecting component side, and a top portion integrally formed on the connected component side of the pedestal portion, wherein a conductive adhesive is attached to the top portion. An electronic component having a bump for electrically connecting the connecting component and the connected component in a state, wherein an outer diameter of a tip of the connected component side at the top of the bump has a pedestal portion at the top. An electronic component characterized by being formed larger than the outer diameter of the side. 2. The electronic device according to claim 1, wherein the outer diameter of the tip of the bump on the connected component side at the top of the bump is formed in a substantially truncated cone shape larger than the outer diameter of the pedestal portion. parts. 3. A pedestal portion fixed to an electrode provided on the connection component side, and a top portion integrally formed on the connected component side of the pedestal portion, and a conductive adhesive is attached to the top portion. A method for manufacturing an electronic component having a bump for electrically connecting the connecting component and the connected component in a state, wherein the first conductive film forming layer is formed on the surface of the electrode and the connecting component. Applying, and forming a first hole for forming a pedestal portion of the bump at an electrode facing portion of the first conductive film forming layer so as to expose the surface of the electrode, and forming the first hole and the first conductive film. A step of forming a first conductive film by attaching a conductive material to the surface of the film forming layer, and removing the conductive material in the other portion while leaving the conductive material attached to the first hole. Forming a pedestal portion in the first hole, and forming the first conductive film forming layer Applying a second conductive film forming layer to the surface and the surface of the pedestal portion; and exposing the surface of the pedestal portion and the outer diameter of the tip of the connected component side at the top of the bump having the outer diameter of the top. Forming a second hole having a wall surface inclined so as to be larger than the outer diameter of the second conductive film forming layer at a position facing the pedestal portion of the second conductive film forming layer; A step of forming a second conductive film by attaching a conductive material to the surface, and removing the conductive material attached to the second hole and removing the other portion of the conductive material forms the second hole. A method for manufacturing an electronic component, comprising: forming a top portion; and removing the first conductive film forming layer and the second conductive film forming layer. 4. The first conductive film forming layer and the second conductive film forming layer are used as insulating layers, and when forming the first conductive film and the second conductive film, a conductive material is attached by plating to form the first conductive film and the second conductive film. 4. The method according to claim 3, wherein, when removing the film and the second conductive film, the conductive material is removed by etching, and the first conductive film forming layer and the second conductive film forming layer are peeled off after forming the top. Electronic component manufacturing method. 5. A pedestal portion fixed to an electrode provided on a connecting component side, and a top portion integrally formed on the connected component side of the pedestal portion, wherein a conductive adhesive is attached to the top portion. An electronic component having a bump for electrically connecting the connection component and the connected component in a state, wherein the top portion is inclined so as to increase in diameter from one side of the pedestal portion toward the connected component side. And a holding recess for holding the conductive adhesive is formed on the other side. 6. A pedestal portion fixed to an electrode provided on a connection component side, and a top portion integrally formed on the connected component side of the pedestal portion, wherein a conductive adhesive is attached to the top portion. A method of manufacturing an electronic component having a bump for electrically connecting the connection component and a connected component in a state,
A step of applying a conductive film forming layer to the surfaces of the electrodes and the connecting parts; and exposing the surface of the pedestal part and the outer diameter of the tip on the connected part side at the top of the bump to the pedestal side at the top. A step of forming a hole whose wall is inclined so as to be larger than the outer diameter at a position facing the pedestal portion of the conductive film forming layer; and attaching a conductive material to the hole and the surface of the conductive film forming layer. Forming a conductive film, and forming a pedestal portion and a top portion with respect to the hole by removing a portion of the conductive material applied to the hole and removing the other portion of the conductive material. A method for manufacturing an electronic component, comprising: 7. The method for manufacturing an electronic component according to claim 6, wherein the conductive film forming layer is an insulating layer, the conductive film is removed by etching, and the conductive film forming layer is peeled off after forming the top.