JP2005158778A - Manufacturing method for lead frame and for semiconductor device - Google Patents

Manufacturing method for lead frame and for semiconductor device Download PDF

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Publication number
JP2005158778A
JP2005158778A JP2003390648A JP2003390648A JP2005158778A JP 2005158778 A JP2005158778 A JP 2005158778A JP 2003390648 A JP2003390648 A JP 2003390648A JP 2003390648 A JP2003390648 A JP 2003390648A JP 2005158778 A JP2005158778 A JP 2005158778A
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lead terminal
semiconductor element
lead
terminal portion
sealing
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Seiji Aso
清次 麻生
Chiaki Araki
千明 荒木
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a lead frame in which a projecting section formed to a lead terminal is miniaturized, and which can prevent a defective mounting by forming the height of the projecting section at a high value; and to provide the manufacturing method for a semiconductor device. <P>SOLUTION: In the semiconductor device in which the mounting-side flat surface of a sealing resin and the exposed surfaces of lead terminals exposed from the sealing resin are formed in approximately the same planes, projecting shapes having widths narrower than lead widths are formed to surfaces exposed from the sealing resin of each lead terminal, and a stand-off structure is formed by pushing a pushing-shaped jig in a lead-frame forming process or a resin sealing process. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、リードフレームの製造方法及び半導体装置の製造方法に関し、特にリード端子部に凸形状を備えるリードフレームの製造方法及び半導体装置の製造方法に関する。   The present invention relates to a lead frame manufacturing method and a semiconductor device manufacturing method, and more particularly to a lead frame manufacturing method and a semiconductor device manufacturing method in which a lead terminal portion has a convex shape.

リードフレームの片面のみを封止して形成される半導体装置では、実装時に半導体装置裏面(封止樹脂部の実装側平坦面)と実装基板面との間にゴミなどの異物が挟まることによる実装不良を防止するため、スタンドオフ構造を採用したものがある。   In a semiconductor device formed by sealing only one side of the lead frame, mounting is performed by foreign matter such as dust sandwiched between the back surface of the semiconductor device (mounting side flat surface of the sealing resin part) and the mounting substrate surface during mounting. Some have adopted a stand-off structure to prevent defects.

図5はリードフレームにスタンドオフ構造を形成した代表的な従来実施例を示した図で、半導体装置の実装側平坦面7とリード端子の露出面8がほぼ同一平面内に形成された半導体装置の断面図である。図5において、突起部12がリードフレームのリード端子部11の露出面に形成されている。16はリードフレームのアイランド部、13は金属細線で、アイランド部16上にマウントされた半導体素子15とリード端子部11を電気的に接続している。14は封止樹脂部である。   FIG. 5 is a diagram showing a typical prior art example in which a standoff structure is formed on a lead frame. A semiconductor device in which a mounting device flat surface 7 and a lead terminal exposed surface 8 are formed in substantially the same plane. FIG. In FIG. 5, the protrusion 12 is formed on the exposed surface of the lead terminal portion 11 of the lead frame. Reference numeral 16 denotes an island portion of the lead frame, and reference numeral 13 denotes a fine metal wire, which electrically connects the semiconductor element 15 mounted on the island portion 16 and the lead terminal portion 11. Reference numeral 14 denotes a sealing resin portion.

このような突起部12を形成する方法は、特開平11−330337号公報に開示されているように、薄板材を打ち抜き加工あるいはエッチング加工してリードフレーム形状を形成した後、リード端子部11の所望部位を凹凸一組の金型を用いてプレス成形して段差や突起を形成するのが一般的である。プレス成形による方法で形成される従来のリード端子部の段差部や突起部は、リードフレームのリード幅と等しく、リード幅全面に形成されているのが一般的であった。   As disclosed in Japanese Patent Application Laid-Open No. 11-330337, a method for forming such a protrusion 12 is formed by punching or etching a thin plate material to form a lead frame shape, In general, a desired part is press-molded using a set of concave and convex molds to form steps and protrusions. In general, the stepped portion and the protruding portion of the conventional lead terminal portion formed by the press molding method are equal to the lead width of the lead frame, and are generally formed on the entire lead width.

また突起部を形成する別の方法として、特開2001−35961号公報に開示されているように、リード端子部の片面が露出している半導体装置の裏面の一部に突起部を形成する方法や、平坦な裏面のほぼ中央であってリード端子部内側に凹部を形成する方法、あるいは短冊状のリード端子部の端面側それぞれに突出部である段差を設ける方法などが提案されている。さらに、実装基板への実装密度を向上させ、実装性も良好な半導体装置として特開2000−332162号公報には、導電性基板をエッチングすることで、半導体装置裏面の凹部やリード端子部の段差部を形成した半導体装置が開示されている。しかし、これらの製造方法はエッチングによるため、リード端子部の狭ピッチ化や実装密度の向上には限界がある。
特開平11−330337号公報 特開2001−35961号公報 特開2000−332162号公報
As another method for forming the protrusion, as disclosed in Japanese Patent Application Laid-Open No. 2001-35961, a method of forming the protrusion on a part of the back surface of the semiconductor device where one surface of the lead terminal portion is exposed. In addition, a method of forming a recess at the center of the flat back surface and inside the lead terminal portion, or a method of providing a step as a protruding portion on each end surface side of the strip-shaped lead terminal portion has been proposed. Further, as a semiconductor device that improves the mounting density on the mounting substrate and has good mountability, Japanese Patent Laid-Open No. 2000-332162 discloses a step on the back surface of the semiconductor device and a step on the lead terminal portion by etching the conductive substrate. A semiconductor device in which a portion is formed is disclosed. However, since these manufacturing methods are based on etching, there is a limit to narrowing the lead terminal portions and improving the mounting density.
Japanese Patent Laid-Open No. 11-330337 JP 2001-35961 A JP 2000-332162 A

上述のように、実装時に半導体装置裏面の実装側平坦面やリード端子部と実装基板表面との間にゴミなどの異物が付着していると、半導体装置のリード端子部と実装基板上に形成された電極とが接触せず、実装不良が発生してしまう。このような実装不良を防止するため、リード端子部に突起や段差を形成する方法として、打ち抜き加工やエッチング加工および金型によるプレス加工などが用いられていたが、これらの加工方法では突起や段差をリードフレームのリード端子幅全面に形成せざるを得ず、リード端子部の狭ピッチ化や実装密度の向上を図ることには限界があった。本発明はこのような問題に対して、リード端子部に形成される突起部を微小化し、かつ突起部の高さを高く形成して実装不良を防止することのできるリードフレームの製造方法及び半導体装置の製造方法を提供することを目的とする。   As described above, when foreign matters such as dust adhere to the mounting side flat surface on the back surface of the semiconductor device or between the lead terminal portion and the mounting substrate surface during mounting, they are formed on the lead terminal portion of the semiconductor device and the mounting substrate. The contacted electrode does not come into contact, resulting in poor mounting. In order to prevent such mounting defects, punching, etching, pressing with a mold, and the like were used as a method of forming protrusions and steps on the lead terminal portion. In these processing methods, protrusions and steps are used. Must be formed over the entire width of the lead terminal of the lead frame, and there is a limit to reducing the pitch of the lead terminal portion and improving the mounting density. In order to solve such problems, the present invention provides a lead frame manufacturing method and semiconductor capable of preventing mounting defects by miniaturizing the protrusions formed on the lead terminal portions and increasing the height of the protrusions. An object is to provide a method for manufacturing a device.

上記目標を達成するため、請求項1に係る発明は、半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部とを備えたリードフレームの製造方法において、前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成する工程を備えたことを特徴とする。   In order to achieve the above object, the invention according to claim 1 is directed to a method of manufacturing a lead frame including an island part for mounting a semiconductor element and a lead terminal part electrically connected to the semiconductor element. When sealing a part of the element and the lead terminal part with resin, a convex jig provided with a protrusion is pressed to each lead terminal part exposed from the sealing resin part, and the width is wider than the lead width. The method includes a step of forming a convex shape that is narrow and protrudes toward the mounting surface side of the lead terminal portion.

請求項2に係る発明は、半導体素子とリード端子部を封止した樹脂部が形成される半導体装置の製造方法において、半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備え、前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成したリードフレームを用意する工程と、前記アイランド部に前記半導体素子をマウントする工程と、各リード端子部と前記半導体素子を電気的に接続する工程と、前記リード端子部の凸形状が露出するように前記半導体素子及び前記リード端子部の一部を樹脂封止する工程とを含むことを特徴とする。   According to a second aspect of the present invention, in a method of manufacturing a semiconductor device in which a resin portion in which a semiconductor element and a lead terminal portion are sealed is formed, an island portion for mounting the semiconductor element is electrically connected to the semiconductor element. When a part of the semiconductor element and the lead terminal part is sealed with resin, a convex jig provided with a protrusion is pressed to each lead terminal part exposed from the sealing resin part. And a step of preparing a lead frame having a narrower width than the lead width and forming a convex shape protruding toward the mounting surface side of the lead terminal portion, a step of mounting the semiconductor element on the island portion, and each lead terminal A step of electrically connecting the semiconductor element and the semiconductor element, and a step of resin-sealing a part of the semiconductor element and the lead terminal part so that a convex shape of the lead terminal part is exposed. That.

請求項3に係る発明は、半導体素子とリード端子部を封止した樹脂部が形成される半導体装置の製造方法において、半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備えたリードフレームを用意する工程と、前記アイランド部に前記半導体素子をマウントする工程と、各リード端子部と前記半導体素子を電気的に接続する工程と、前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成した後、前記リードフレームを封止金型で挟持し、前記リード端子部の凸形状が露出するように前記半導体素子及び前記リード端子部の一部を樹脂封止する工程とを含むことを特徴とする。   According to a third aspect of the present invention, in a method of manufacturing a semiconductor device in which a resin portion in which a semiconductor element and a lead terminal portion are sealed is formed, an island portion for mounting the semiconductor element is electrically connected to the semiconductor element. A step of preparing a lead frame having a lead terminal portion; a step of mounting the semiconductor element on the island portion; a step of electrically connecting each lead terminal portion and the semiconductor element; and the semiconductor element and the lead When a part of the terminal part is sealed with resin, each lead terminal part exposed from the sealing resin part is pressed with a convex jig provided with a protrusion so that the lead width is narrower than the lead width. After forming the convex shape protruding to the mounting surface side of the terminal portion, the lead frame is sandwiched between sealing molds, and the semiconductor element and the lead terminal portion are exposed so that the convex shape of the lead terminal portion is exposed. The section is characterized by including the step of resin encapsulation.

請求項4に係る発明は、半導体素子とリードフレームを封止した樹脂部とが形成される半導体装置の製造方法において、半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備えたリードフレームを用意する工程と、前記アイランド部に半導体素子をマウントする工程と、各リード端子と前記半導体素子を電気的に接続する工程と、前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、前記リードフレームを封止金型で挟持し、前記半導体素子及び前記リード端子部の一部を樹脂封止すると同時に、該封止樹脂部から露出する各リード端子部に、前記封止金型に備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成する工程とを含むことを特徴とする。
According to a fourth aspect of the present invention, in a method of manufacturing a semiconductor device in which a semiconductor element and a resin part in which a lead frame is sealed are formed, an island part for mounting the semiconductor element is electrically connected to the semiconductor element. A step of preparing a lead frame having a lead terminal portion; a step of mounting a semiconductor element on the island portion; a step of electrically connecting each lead terminal to the semiconductor element; and the semiconductor element and the lead terminal portion. When part of the resin is sealed with resin, the lead frame is sandwiched between sealing molds, and the semiconductor element and part of the lead terminal part are resin-sealed, and at the same time exposed from the sealing resin part. Pressing each of the lead terminal portions with a convex jig provided in the sealing mold to form a convex shape that is narrower than the lead width and protrudes toward the mounting surface side of the lead terminal portion. It is characterized in.

本発明によるリードフレームの製造方法及び半導体装置の製造方法は、凸形状を予めリードフレームに形成しておくか、または樹脂封止工程時にリードフレームに凸形状を形成して形成することができ、工程上いずれか都合の良い方で簡便に作成できる。また、銅系合金のように展性の大きい材料で形成されたリードフレームに本発明を適用すると、リードフレームの厚さに対する凸形状の高さを比較的大きくでき、スタンドオフの高さを設定するうえで自由度が大きい。   The lead frame manufacturing method and the semiconductor device manufacturing method according to the present invention can be formed by forming a convex shape on the lead frame in advance or forming a convex shape on the lead frame during the resin sealing step, It can be easily created at any convenient point in the process. In addition, when the present invention is applied to a lead frame formed of a material having high malleability such as a copper alloy, the height of the convex shape with respect to the thickness of the lead frame can be made relatively large, and the height of the standoff is set. There is a lot of freedom to do.

本発明によるリードフレーム及び半導体装置は、リード端子部の露出面に形成した凸形状によりスタンドオフ構造が形成され、実装時にゴミ等があっても問題なく実装することが可能となり、実装不良を解消することができる。また、アイランド部を露出する構造とすれば半導体装置の熱を効率良く半導体装置から放出することができる。なお、凸形状はリード幅より狭いため、実装基板上に形成する配線の幅を狭くでき、また、狭ピッチに形成されたリードフレームにも適用できるため多ピン化が可能となり、実装密度を向上させることができる。   The lead frame and the semiconductor device according to the present invention have a stand-off structure formed by the convex shape formed on the exposed surface of the lead terminal portion, and can be mounted without any problems even if there is dust or the like at the time of mounting, eliminating mounting defects. can do. Further, if the island portion is exposed, the heat of the semiconductor device can be efficiently released from the semiconductor device. Since the convex shape is narrower than the lead width, the width of the wiring formed on the mounting board can be narrowed, and it can also be applied to a lead frame formed at a narrow pitch, enabling multiple pins and improving the mounting density. Can be made.

以下、本発明のリードフレームの製造方法及び半導体装置の製造方法について説明する。実装不良の防止及び実装密度の向上という観点から、封止樹脂部の実装側平坦面と、封止樹脂部から露出するリード端子部の露出面とがほぼ同一平面内に形成される半導体装置を形成する場合を例にとり、説明する。   Hereinafter, a method for manufacturing a lead frame and a method for manufacturing a semiconductor device according to the present invention will be described. A semiconductor device in which the mounting-side flat surface of the sealing resin portion and the exposed surface of the lead terminal portion exposed from the sealing resin portion are formed in substantially the same plane from the viewpoint of preventing mounting defects and improving the mounting density. The case of forming will be described as an example.

まず第1の発明のリードフレームの製造方法について説明する。通常のリードフレームの製造方法に従い、銅系合金からなる薄板材からプレス加工等により、半導体素子をマウントするためのアイランド部、半導体素子と電気的に接続されるリード端子部等を備えたリードフレームを形成する。その後、図4に示す円錐台状の凸状治具を用いて、リードフレームのリード端子部を、半導体装置を形成した際に実装側となる方向に凸形状が突出するように押圧する。具体的には、厚さ0.127mmの銅系合金からなる銅リードフレーム(Ni:1.8%、Si:0.4%、Zn:1.1%を含む)に先端径0.08mm(円錐台の高さ2.8mm、高さ2.8mmの部分の径が1.2mm)の凸状治具を2.4kgの荷重で押圧することにより、リード端子部に0.133mmの高さの突起を形成することができた。このとき凸形状の最大径は約0.15mmとなった。同様に、先端径が0.05mmの円錐台形状の凸状治具を2.4kg、3.0kgの荷重で押圧することにより、それぞれ0.113mm、0.113mmの高さの突起を形成することができた。このとき凸形状の最大径はそれぞれ約0.10mmとなった。なお、押圧する際には、リードフレームをフッ素樹脂でコーティングした基台の上に載せ、上面から凸状治具に所定の荷重を加えた。   First, the manufacturing method of the lead frame of the first invention will be described. In accordance with a normal lead frame manufacturing method, a lead frame including an island portion for mounting a semiconductor element, a lead terminal portion electrically connected to the semiconductor element, and the like by press working from a thin plate material made of a copper-based alloy Form. Thereafter, by using a truncated cone-shaped convex jig shown in FIG. 4, the lead terminal portion of the lead frame is pressed so that the convex shape protrudes in the direction of the mounting side when the semiconductor device is formed. Specifically, the tip diameter is 0.08 mm on a copper lead frame (including Ni: 1.8%, Si: 0.4%, Zn: 1.1%) made of a copper-based alloy having a thickness of 0.127 mm. By pressing a convex jig with a frustoconical height of 2.8 mm and a diameter of the height of 2.8 mm of 1.2 mm) with a load of 2.4 kg, the lead terminal portion has a height of 0.133 mm. Can be formed. At this time, the maximum diameter of the convex shape was about 0.15 mm. Similarly, by pressing a frustoconical convex jig having a tip diameter of 0.05 mm with a load of 2.4 kg and 3.0 kg, protrusions having a height of 0.113 mm and 0.113 mm are formed, respectively. I was able to. At this time, the maximum diameter of the convex shape was about 0.10 mm. When pressing, the lead frame was placed on a base coated with a fluororesin, and a predetermined load was applied to the convex jig from the upper surface.

このように本発明によれば、突起の最大径は約0.10mm程度となり、リード端子の幅(通常0.35mm程度)に較べて十分小さい突起を形成することができる。また突起の高さが0.1mm程度以上となり、高いスタンドオフ形状が形成できることがわかる。なお、凸状治具の形状は、円錐台形状に限定されるものではなく、円錐形状、角錐形状、角錐台形状、円柱形状、角柱形状、球状形状等種々変更することが可能であり、使用するリードフレームの材質、荷重、凸状治具の大きさ等も、適宜選択すればよい。またリード端子部に形成する凸形状の数、配置等も適宜選択することができるし、形成する凸形状の数、配置に応じて、凸状治具の凸部の数、配置等を変えることもできる。   Thus, according to the present invention, the maximum diameter of the protrusion is about 0.10 mm, and a protrusion that is sufficiently smaller than the width of the lead terminal (usually about 0.35 mm) can be formed. It can also be seen that the height of the protrusion is about 0.1 mm or more, and a high standoff shape can be formed. The shape of the convex jig is not limited to the truncated cone shape, and can be variously changed such as a cone shape, a pyramid shape, a truncated pyramid shape, a cylindrical shape, a prismatic shape, a spherical shape, and the like. The material of the lead frame to be used, the load, the size of the convex jig, etc. may be appropriately selected. In addition, the number and arrangement of convex shapes formed on the lead terminal portion can be selected as appropriate, and the number and arrangement of convex portions of the convex jig can be changed according to the number and arrangement of convex shapes to be formed. You can also.

なお上記説明は、薄板材をプレス加工等してリードフレーム形状を形成した後、凸形状を形成する場合について説明したが、凸形状を形成した後、リードフレーム形状を形成することも可能である。   In the above description, the case where the convex shape is formed after forming the lead frame shape by pressing the thin plate material or the like is described. However, the lead frame shape can also be formed after the convex shape is formed. .

このように本発明のリードフレームの製造方法によれば、リード端子部の幅に較べて狭い幅の凸形状(突起部)を形成することができ、その高さもリードフレームの厚さとほぼ同じ程度に形成することができるので、実装基板上にゴミ等の付着物があった場合でも、凸形状と接続する部分に付着していない限り、接続不良の発生を防止できる。またその製造方法は、凸状治具を押圧するだけであり、簡便な方法である。   As described above, according to the lead frame manufacturing method of the present invention, it is possible to form a convex shape (protrusion) having a narrow width compared to the width of the lead terminal portion, and the height thereof is substantially the same as the thickness of the lead frame. Therefore, even if there is an adhering substance such as dust on the mounting substrate, it is possible to prevent the occurrence of poor connection as long as it does not adhere to the portion connected to the convex shape. Moreover, the manufacturing method is only a simple method of pressing the convex jig.

次に実施例1で説明したリードフレームを使用して半導体装置を形成する第2の発明の実施例について説明する。図1(a)、(b)は本願第2の発明により形成した半導体装置の断面および裏面の一部を模式的に示した図で、封止樹脂部4の実装側平坦面7と、封止樹脂部4から露出したリード端子部1の露出面8とがほぼ同一平面に形成されている場合である。凸形状2の位置や数は適宜設定でき、例えば図2に示すように、リード端子部1に2個の凸形状2を設け、実装基板との接続を確実にすることもできる。   Next, an embodiment of the second invention for forming a semiconductor device using the lead frame described in the embodiment 1 will be described. FIGS. 1A and 1B are views schematically showing a cross section and a part of the back surface of a semiconductor device formed according to the second invention of the present application. This is a case where the exposed surface 8 of the lead terminal portion 1 exposed from the stop resin portion 4 is formed on substantially the same plane. The position and number of the convex shapes 2 can be set as appropriate. For example, as shown in FIG. 2, two convex shapes 2 can be provided on the lead terminal portion 1 to ensure connection with the mounting substrate.

以下、半導体装置の製造方法の実施例について説明する。まず実施例1で説明した製造方法に従い、凸形状2を形成したリードフレームを用意する。アイランド部6に半導体素子5をマウントし、金属細線3により半導体素子5の電極とリード端子部1を電気的に接続する。次に、封止金型によりリードフレームを挟持し、封止樹脂により半導体素子5及びリード端子部1の一部を封止して、封止樹脂部4を形成する。この封止金型がリードフレームを挟持する際、リード端子部1に形成された凸形状が変形しないよう、封止金型が凸形状2を挟持しないようにしておく。以下、通常のリード切断工程に従い、リードフレームを切断し、図1、図2に示す構造の半導体装置を得ることができる。   Examples of the method for manufacturing a semiconductor device will be described below. First, according to the manufacturing method described in the first embodiment, a lead frame having a convex shape 2 is prepared. The semiconductor element 5 is mounted on the island part 6, and the electrode of the semiconductor element 5 and the lead terminal part 1 are electrically connected by the metal thin wire 3. Next, the lead frame is sandwiched between sealing molds, and the semiconductor element 5 and a part of the lead terminal portion 1 are sealed with a sealing resin, thereby forming the sealing resin portion 4. When the sealing mold sandwiches the lead frame, the sealing mold does not sandwich the convex shape 2 so that the convex shape formed on the lead terminal portion 1 is not deformed. Thereafter, the lead frame is cut in accordance with a normal lead cutting process, and the semiconductor device having the structure shown in FIGS. 1 and 2 can be obtained.

本発明により形成される半導体装置は、凸形状2がリード端子部1の幅より狭く、かつ高く形成されるため、ゴミの付着等の影響を受けにくく、接続不良等の発生を防ぐことができる。また図1、図2に示すように、凸形状2が形成されたリード端子部1の裏面側(封止樹脂部4内)は凹形状となっており、その中に封止樹脂が注入される形状となっており、封止樹脂とリード端子部1の密着性が良くなるという効果もある。なお、図2に示す構造の半導体装置では、一方の凸形状の中に封止樹脂が注入される形状となっているが、これに限定されるものでないことは言うまでもない。   In the semiconductor device formed according to the present invention, since the convex shape 2 is formed narrower and higher than the width of the lead terminal portion 1, it is difficult to be affected by the adhesion of dust and the like, and the occurrence of poor connection or the like can be prevented. . As shown in FIGS. 1 and 2, the back side (inside the sealing resin portion 4) of the lead terminal portion 1 formed with the convex shape 2 has a concave shape, and the sealing resin is injected therein. This has the effect of improving the adhesion between the sealing resin and the lead terminal portion 1. The semiconductor device having the structure shown in FIG. 2 has a shape in which the sealing resin is injected into one convex shape, but it is needless to say that the invention is not limited to this.

次に半導体装置の製造方法について別の実施例を説明する。前述の実施例2は、予め凸形状2を形成したリードフレームを用いて半導体装置を形成したが、本実施例は、半導体装置の製造工程の途中工程で凸形状2を形成するものである。まず通常の半導体装置の製造工程に従い、アイランド部6、リード端子部1等を備えたリードフレームを用意する。このときリードフレームには凸形状は形成されていない。アイランド部6に半導体素子5をマウントし、金属細線3により半導体素子5の電極とリード端子部1を電気的に接続する。次に凸形状2を形成するため、半導体素子5とリード端子部1の一部を封止樹脂にて封止する前に、封止樹脂部4から露出する各リード端子部1に、突起を設けた凸状治具を押圧し、リード幅より幅が狭い凸形状2を形成する。凸状治具を押圧する際には、実施例1で説明したように、フッ素樹脂でコーティングした基台にリードフレームを載せて、凸形状を形成すればよい。その後、通常の樹脂封止工程に従い、リードフレームを封止金型で挟持し、半導体素子5及びリード端子部1の一部を封止して封止樹脂部4を形成する。この封止金型がリードフレームを挟持する際、リード端子部1に形成された凸形状が変形しないよう、封止金型が凸形状2を挟持しないようにしておく。以下、通常のリード切断工程に従い、リードフレームを切断し、図1、図2に示す構造の半導体装置を得ることができる。   Next, another embodiment of the semiconductor device manufacturing method will be described. In the above-described second embodiment, the semiconductor device is formed by using the lead frame in which the convex shape 2 is formed in advance. However, in this embodiment, the convex shape 2 is formed in the course of the manufacturing process of the semiconductor device. First, in accordance with a normal manufacturing process of a semiconductor device, a lead frame including an island portion 6, a lead terminal portion 1 and the like is prepared. At this time, no convex shape is formed on the lead frame. The semiconductor element 5 is mounted on the island part 6, and the electrode of the semiconductor element 5 and the lead terminal part 1 are electrically connected by the metal thin wire 3. Next, in order to form the convex shape 2, before the semiconductor element 5 and a part of the lead terminal portion 1 are sealed with the sealing resin, a protrusion is formed on each lead terminal portion 1 exposed from the sealing resin portion 4. The provided convex jig is pressed to form a convex shape 2 narrower than the lead width. When pressing the convex jig, as described in the first embodiment, a lead frame may be placed on a base coated with a fluororesin to form a convex shape. Thereafter, according to a normal resin sealing process, the lead frame is sandwiched between sealing molds, and the semiconductor element 5 and a part of the lead terminal portion 1 are sealed to form the sealing resin portion 4. When the sealing mold sandwiches the lead frame, the sealing mold does not sandwich the convex shape 2 so that the convex shape formed on the lead terminal portion 1 is not deformed. Thereafter, the lead frame is cut in accordance with a normal lead cutting process, and the semiconductor device having the structure shown in FIGS. 1 and 2 can be obtained.

このように本実施例においても、リード端子部1に形成される凸形状2は、リード端子部1の幅より狭く、かつ高く形成されるため、ゴミの付着等の影響を受けにくく、接続不良等の発生を防ぐことができる。また図1、図2に示すように、本発明により形成される半導体装置は、凸形状2が形成されたリード端子1の裏面側は凹形状となっており、その中に封止樹脂が注入されている形状となっており、封止樹脂部4とリード端子部1の密着性が良くなるという効果もある。   As described above, also in this embodiment, the convex shape 2 formed on the lead terminal portion 1 is formed narrower and higher than the width of the lead terminal portion 1, so that it is not easily affected by adhesion of dust and the like, and connection failure Etc. can be prevented. As shown in FIGS. 1 and 2, the semiconductor device formed according to the present invention has a concave shape on the back side of the lead terminal 1 on which the convex shape 2 is formed, and a sealing resin is injected into the concave shape. Thus, the adhesion between the sealing resin portion 4 and the lead terminal portion 1 is improved.

次に更に別の実施例について説明する。前述の実施例3で説明した実施例は、封止金型でリードフレームを挟持する前に、別の凸状治具で凸形状を形成したが、本実施例は封止金型と凸状治具を一体に形成するものである。通常の半導体装置の製造工程に従い、アイランド部6とリード端子部1等を備えたリードフレームを用意する。このときリードフレームには凸形状は形成されていない。アイランド部6に半導体素子5をマウントし、金属細線3により半導体素子5の電極とリード端子部1を電気的に接続する。次に、凸形状2を形成すると同時に樹脂封止を行うため、半導体素子5とリード端子部1を封止樹脂にて封止する際、封止樹脂部4から露出する各リード端子部1に当接する部分に突起(凸状治具)を備えた封止金型でリードフレームを挟持する。この挟持により、リード端子部1には凸形状2が形成される。通常の封止工程に従い、半導体素子5及びリード端子部1の一部を封止する封止樹脂部4を形成する。以下、通常のリード切断工程に従い、リードフレームを切断し、図3に半導体装置の一部を模式的に示す構造の半導体装置を得ることができる。   Next, another embodiment will be described. In the embodiment described in the above-described embodiment 3, the convex shape is formed by another convex jig before the lead frame is sandwiched by the sealing mold. A jig is integrally formed. In accordance with a normal manufacturing process of a semiconductor device, a lead frame including an island portion 6 and a lead terminal portion 1 is prepared. At this time, no convex shape is formed on the lead frame. The semiconductor element 5 is mounted on the island part 6, and the electrode of the semiconductor element 5 and the lead terminal part 1 are electrically connected by the metal thin wire 3. Next, in order to perform resin sealing at the same time as forming the convex shape 2, when the semiconductor element 5 and the lead terminal portion 1 are sealed with the sealing resin, each lead terminal portion 1 exposed from the sealing resin portion 4 is formed. The lead frame is sandwiched between sealing molds provided with protrusions (convex jigs) at the abutting portions. By this clamping, a convex shape 2 is formed on the lead terminal portion 1. In accordance with a normal sealing process, a sealing resin portion 4 that seals part of the semiconductor element 5 and the lead terminal portion 1 is formed. In the following, the lead frame is cut in accordance with a normal lead cutting process, and a semiconductor device having a structure schematically showing a part of the semiconductor device in FIG. 3 can be obtained.

図3に示す半導体装置は、凸形状2は封止樹脂部4の外側に形成されるが、上記実施例同様、リード端子部1に形成される凸形状2は、リード端子部1の幅より狭く、かつ高く形成されるため、ゴミの付着等の影響を受けにくく、接続不良等の発生を防ぐことができる。   In the semiconductor device shown in FIG. 3, the convex shape 2 is formed outside the sealing resin portion 4, but the convex shape 2 formed on the lead terminal portion 1 is smaller than the width of the lead terminal portion 1 as in the above embodiment. Since it is formed narrow and high, it is hardly affected by the adhesion of dust and the like, and it is possible to prevent the occurrence of poor connection.

なお、図3に示す半導体装置ではダイアイランド部6が封止樹脂部4内に配置する構造となっているが、図1及び図2に示すように、ダイアイランド部6が封止樹脂部4から露出する構造であっても良いし、図1及び図2に示す半導体装置が、図3に示す半導体装置のように、ダイアイランド部6が封止樹脂部4内に配置される構造であっても良い。図1及び図2に示すように、ダイアイランド部6が封止樹脂部4から露出する構造である場合、放熱効果が高くなるので、半導体素子5の発熱量が大きい場合は、この構造を選択するのが良い。以上本発明の実施例について説明したが、リード端子部1と半導体素子5の接続を金属細線3の代わりに、ワイヤレスの別の方法に変更するなど、本発明の趣旨を変更しない範囲で種々変更可能であることは言うまでもない。   In the semiconductor device shown in FIG. 3, the die island portion 6 is arranged in the sealing resin portion 4. However, as shown in FIGS. 1 and 2, the die island portion 6 is the sealing resin portion 4. The semiconductor device shown in FIGS. 1 and 2 may have a structure in which the die island portion 6 is disposed in the sealing resin portion 4 as in the semiconductor device shown in FIG. May be. As shown in FIGS. 1 and 2, when the die island portion 6 is exposed from the sealing resin portion 4, the heat dissipation effect is enhanced, so this structure is selected when the semiconductor element 5 generates a large amount of heat. Good to do. Although the embodiments of the present invention have been described above, various modifications are made without departing from the spirit of the present invention, such as changing the connection between the lead terminal portion 1 and the semiconductor element 5 to another wireless method instead of the thin metal wire 3. It goes without saying that it is possible.

(a)は本発明の半導体装置の製造方法により形成される半導体装置を模式的に示した断面図、(b)はその裏面の説明図である。(A) is sectional drawing which showed typically the semiconductor device formed with the manufacturing method of the semiconductor device of this invention, (b) is explanatory drawing of the back surface. 本発明の別の実施例を説明する半導体装置を模式的に示した断面図である。It is sectional drawing which showed typically the semiconductor device explaining another Example of this invention. 本発明のさらに別の実施例を説明する半導体装置を模式的に示した断面図である。It is sectional drawing which showed typically the semiconductor device explaining another Example of this invention. 本発明の実施例に使用する凸状治具の説明図である。It is explanatory drawing of the convex jig | tool used for the Example of this invention. 従来の実施例を説明する半導体装置を模式的に示した断面図である。It is sectional drawing which showed typically the semiconductor device explaining the conventional Example.

符号の説明Explanation of symbols

1;リード端子部、2;凸形状、3;金属細線、4封止樹脂部、5;半導体素子、6;アイランド部、7;実装側平坦面、8;露出したリード端子部の露出面   DESCRIPTION OF SYMBOLS 1; Lead terminal part, 2; Convex shape, 3; Metal fine wire, 4 sealing resin part, 5; Semiconductor element, 6: Island part, 7: Mounting side flat surface, 8: Exposed surface of exposed lead terminal part

Claims (4)

半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部とを備えたリードフレームの製造方法において、
前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成する工程を備えたことを特徴とするリードフレームの製造方法。
In a manufacturing method of a lead frame including an island part for mounting a semiconductor element and a lead terminal part electrically connected to the semiconductor element,
When sealing a part of the semiconductor element and the lead terminal part with resin, a convex jig provided with a protrusion is pressed to each lead terminal part exposed from the sealing resin part, A method of manufacturing a lead frame, comprising a step of forming a convex shape that is narrow and protrudes toward the mounting surface side of the lead terminal portion.
半導体素子とリード端子部を封止した樹脂部が形成される半導体装置の製造方法において、
半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備え、前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成したリードフレームを用意する工程と、
前記アイランド部に前記半導体素子をマウントする工程と、
各リード端子部と前記半導体素子を電気的に接続する工程と、
前記リード端子部の凸形状が露出するように前記半導体素子及び前記リード端子部の一部を樹脂封止する工程とを含むことを特徴とする半導体装置の製造方法。
In the manufacturing method of the semiconductor device in which the resin portion in which the semiconductor element and the lead terminal portion are sealed is formed,
An island portion for mounting a semiconductor element, and a lead terminal portion electrically connected to the semiconductor element, and when the semiconductor element and a part of the lead terminal portion are sealed with resin, the sealing resin portion A lead frame is prepared by pressing a convex jig provided with a protrusion on each lead terminal portion exposed from the lead, and forming a convex shape that is narrower than the lead width and protrudes toward the mounting surface side of the lead terminal portion. Process,
Mounting the semiconductor element on the island part;
Electrically connecting each lead terminal portion and the semiconductor element;
And a step of resin-sealing the semiconductor element and a part of the lead terminal portion so that the convex shape of the lead terminal portion is exposed.
半導体素子とリード端子部を封止した樹脂部が形成される半導体装置の製造方法において、
半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備えたリードフレームを用意する工程と、
前記アイランド部に前記半導体素子をマウントする工程と、
各リード端子部と前記半導体素子を電気的に接続する工程と、
前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、該封止樹脂部から露出する各リード端子部に、突起を備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成した後、前記リードフレームを封止金型で挟持し、前記リード端子部の凸形状が露出するように前記半導体素子及び前記リード端子部の一部を樹脂封止する工程とを含むことを特徴とする半導体装置の製造方法。
In the manufacturing method of the semiconductor device in which the resin portion in which the semiconductor element and the lead terminal portion are sealed is formed,
A step of preparing a lead frame including an island part for mounting a semiconductor element and a lead terminal part electrically connected to the semiconductor element;
Mounting the semiconductor element on the island part;
Electrically connecting each lead terminal portion and the semiconductor element;
When sealing a part of the semiconductor element and the lead terminal part with resin, a convex jig provided with a protrusion is pressed to each lead terminal part exposed from the sealing resin part, After forming a convex shape that is narrow and protrudes toward the mounting surface side of the lead terminal portion, the lead frame is sandwiched between sealing molds so that the convex shape of the lead terminal portion is exposed. And a step of resin-sealing a part of the lead terminal portion.
半導体素子とリードフレームを封止した樹脂部とが形成される半導体装置の製造方法において、
半導体素子をマウントするアイランド部と、前記半導体素子と電気的に接続されるリード端子部を備えたリードフレームを用意する工程と、
前記アイランド部に半導体素子をマウントする工程と、
各リード端子と前記半導体素子を電気的に接続する工程と、
前記半導体素子と前記リード端子部の一部を樹脂にて封止する際、前記リードフレームを封止金型で挟持し、前記半導体素子及び前記リード端子部の一部を樹脂封止すると同時に、該封止樹脂部から露出する各リード端子部に、前記封止金型に備えた凸状治具を押圧し、該リード幅より幅が狭く、前記リード端子部の実装面側に突出する凸形状を形成する工程とを含むことを特徴とする半導体装置の製造方法。
In a manufacturing method of a semiconductor device in which a semiconductor element and a resin portion sealing a lead frame are formed,
A step of preparing a lead frame including an island part for mounting a semiconductor element and a lead terminal part electrically connected to the semiconductor element;
Mounting a semiconductor element on the island part;
Electrically connecting each lead terminal and the semiconductor element;
When sealing the semiconductor element and a part of the lead terminal part with resin, the lead frame is sandwiched between sealing molds, and simultaneously the semiconductor element and a part of the lead terminal part are resin-sealed. A convex jig provided in the sealing mold is pressed against each lead terminal portion exposed from the sealing resin portion, and the convex width is narrower than the lead width and protrudes toward the mounting surface side of the lead terminal portion. Forming a shape, and a method for manufacturing a semiconductor device.
JP2003390648A 2003-11-20 2003-11-20 Manufacturing method for lead frame and for semiconductor device Pending JP2005158778A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016469A (en) * 2006-07-03 2008-01-24 Renesas Technology Corp Semiconductor device
JP6085726B2 (en) * 2014-10-03 2017-02-22 旭化成エレクトロニクス株式会社 Hall sensor manufacturing method, hall sensor, and lens module
CN108630648A (en) * 2017-03-17 2018-10-09 艾普凌科有限公司 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016469A (en) * 2006-07-03 2008-01-24 Renesas Technology Corp Semiconductor device
JP6085726B2 (en) * 2014-10-03 2017-02-22 旭化成エレクトロニクス株式会社 Hall sensor manufacturing method, hall sensor, and lens module
JPWO2016051726A1 (en) * 2014-10-03 2017-04-27 旭化成エレクトロニクス株式会社 Hall sensor manufacturing method, hall sensor, and lens module
CN108630648A (en) * 2017-03-17 2018-10-09 艾普凌科有限公司 Semiconductor device

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