JPS636153B2 - - Google Patents
Info
- Publication number
- JPS636153B2 JPS636153B2 JP57003626A JP362682A JPS636153B2 JP S636153 B2 JPS636153 B2 JP S636153B2 JP 57003626 A JP57003626 A JP 57003626A JP 362682 A JP362682 A JP 362682A JP S636153 B2 JPS636153 B2 JP S636153B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- glass
- wire
- diode
- cuprous oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 14
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 14
- 229940112669 cuprous oxide Drugs 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 6
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004328 sodium tetraborate Substances 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Description
【発明の詳細な説明】
この発明はDHD型ガラス封止ダイオード電極
の製造法に係り、詳しくのべると、小径部と大径
部を有する電極を釘打ち加工または成形加工によ
つて組合わせて得られるリードレスダイオード電
極において、銅パイプを嵌合する方法によつて銅
層を被覆した後、伸線加工を施して得られる鉄−
ニツケル線を切断し、釘打ち加工または成形加工
後に電極表面銅層に亜酸化銅皮膜を形成させるこ
とを特徴とするものである。[Detailed Description of the Invention] The present invention relates to a method for manufacturing a DHD type glass-sealed diode electrode, and more specifically, it is obtained by combining an electrode having a small diameter portion and a large diameter portion by nailing or molding. In the leadless diode electrode, a copper layer is coated by a method of fitting a copper pipe, and then an iron wire obtained by wire drawing is applied.
This method is characterized by cutting the nickel wire and forming a cuprous oxide film on the copper layer on the electrode surface after nailing or shaping.
現在市販されているダイオード電極の殆んどは
第1図に示すように両端部にリード線1を具備し
た電極2間に半導体素子3を装着し、電極2の周
囲を封止ガラス4にて封止したDHD型ガラス封
止ダイオード電極であり、これをプリント基板等
に装着する際には、プリント基板の装着孔に細長
いリード線1を挿入して用いなければならない。 Most of the diode electrodes currently on the market have a semiconductor element 3 mounted between electrodes 2 with lead wires 1 at both ends, and a sealing glass 4 surrounding the electrodes 2, as shown in Fig. 1. This is a sealed DHD type glass-sealed diode electrode, and when it is mounted on a printed circuit board etc., a long and thin lead wire 1 must be inserted into the mounting hole of the printed circuit board.
このためその作業に多大の工数を要するととも
にダイオード自体の製造過程においてもリード線
を有しているために自動化作業の大きな障害とな
つているのである。 For this reason, the work requires a large number of man-hours, and the manufacturing process of the diode itself also includes lead wires, which is a major hindrance to automated work.
このようなことから第2図のようなリード線を
有しない、プリント基板への装着容易DHD型ガ
ラス封止リードレスダイオードが考案され、その
需要が次第に急増しつつある。 For this reason, a DHD type glass-sealed leadless diode, which does not have lead wires and is easy to mount on a printed circuit board, as shown in FIG. 2, has been devised, and its demand is rapidly increasing.
そしてこのようなリードレスダイオードの電極
2には銅層6を被覆した心線5(例えばFe−Ni
線)の表面に硼砂ガラス層または亜酸化銅層7を
施したジユメツト線(第3図)が使用され、これ
を一定長に切断し、釘打ち加工を施こして第4図
に示すような小径部8と大径部9からなる電極2
として用意する。 The electrode 2 of such a leadless diode is made of a core wire 5 (for example, Fe-Ni) coated with a copper layer 6.
A composite wire (Fig. 3) with a borax glass layer or a cuprous oxide layer 7 applied to the surface of the wire (Fig. Electrode 2 consisting of a small diameter part 8 and a large diameter part 9
Prepare as.
そしてこのような形状の電極2の中央部に第2
図のようにシリコン等の半導体素子3を装着し、
電極2の周囲を封止ガラス4で封止することによ
つてダイオードを得ている。 Then, a second electrode is placed in the center of the electrode 2 having such a shape.
As shown in the figure, attach a semiconductor element 3 such as silicon,
A diode is obtained by sealing the electrode 2 with a sealing glass 4.
ところが電極2表面の硼砂ガラス層または亜酸
化銅層7は、非常に脆いため釘打ち加工や成形加
工のような強い力が加えられると、剥離あるいは
疵が発生しやすい。そしてガラス封止ダイオード
にとつてこの表面硼砂ガラス層または亜酸化銅層
の欠損は、ガラス封止後の気密性を著しく低下さ
せ、リーク不良などの大きな要因となるのであ
る。 However, the borax glass layer or the cuprous oxide layer 7 on the surface of the electrode 2 is very brittle and is likely to peel off or crack when strong force is applied to it, such as during nailing or molding. For glass-sealed diodes, defects in the surface borax glass layer or cuprous oxide layer significantly reduce the airtightness after glass-sealing and become a major cause of leakage defects.
この発明はDHD型ガラス封止ダイオード電極
における上記の欠点を解消すべく検討の結果、得
られたものであつて、銅パイプを嵌合する方法で
銅層を被覆した心線例えばFe−Ni線に対する亜
酸化銅処理を行う前に、心線を釘打ち加工して第
4図のような小径部8と大径部9からなる形状の
電極2を作成しておき、そののちこの電極2表面
に亜酸化銅層を形成させることを特徴とするもの
であり、これによつてガラス封止部の疵をなく
し、完全にガラスと密着させてダイオードの信頼
性を高め、ジユメツト線電極表面に起因するリー
ク不良を完全に除去することに成功したものであ
る。 This invention was obtained as a result of studies to eliminate the above-mentioned drawbacks of DHD type glass-sealed diode electrodes, and it is a core wire coated with a copper layer, such as a Fe-Ni wire, by a method of fitting a copper pipe. Before carrying out the cuprous oxide treatment, the core wire is nailed to create an electrode 2 having a shape consisting of a small diameter part 8 and a large diameter part 9 as shown in Fig. 4, and then the surface of this electrode 2 is It is characterized by forming a cuprous oxide layer on the glass sealing part, thereby eliminating flaws in the glass sealing part, completely adhering to the glass, and increasing the reliability of the diode. We have succeeded in completely eliminating leak defects caused by this.
特にガラスと密着する小径部8を意図的に変形
させて、ガラスとの濡れ性を改善するために第5
図のような変形形状の電極を作成する時にこの発
明の方法は効果的である。 In particular, the small diameter portion 8 that comes into close contact with the glass is intentionally deformed to improve the wettability with the glass.
The method of the present invention is effective when creating electrodes with deformed shapes as shown in the figure.
以下この発明の実施例として電極を釘打ち加工
後亜酸化銅による表面酸化処理の方法について説
明する。 As an example of the present invention, a method of surface oxidation treatment using cuprous oxide after nailing an electrode will be described below.
まず銅パイプを嵌合する方法で銅被覆した0.1
〜1.5mmφまで伸線したFe−Ni素線を用意する。
そしてこの素線を釘打ちしながら第4図のような
形状の電極2を作成する。 First, copper-coated 0.1
Prepare Fe-Ni wire drawn to ~1.5mmφ.
Then, by nailing this wire, an electrode 2 having a shape as shown in FIG. 4 is created.
この時次工程の亜酸化銅処理において小径部8
も端面が酸化されるため、釘打ち加工時に該端面
にAgペレツト10を圧着する。またはAgペレツ
トを圧着させない場合は亜酸化銅処理後に端面部
のみ塩酸洗いをすることにより該端面部の黒化部
分を除去することができる。 At this time, in the next process of cuprous oxide treatment, the small diameter part 8
Since the end faces of the nails are also oxidized, Ag pellets 10 are crimped onto the end faces during nailing. Alternatively, when the Ag pellets are not pressed, the blackened portions of the end surfaces can be removed by washing only the end surfaces with hydrochloric acid after the cuprous oxide treatment.
このようにして用意した電極2を第6図に示す
ような連続酸化処理工程にて処理する。 The electrode 2 thus prepared is subjected to a continuous oxidation process as shown in FIG.
まず電極2を送り駆動装置11によつて回動す
るベルト12上にのせ、加熱炉13に誘導し、該
加熱炉内で950℃以上に加熱したのち、水温40℃
以下の水冷却槽14中へ連続的に浸漬して急冷
し、電極2の表面に亜酸化銅皮膜のみを生成させ
るのである。 First, the electrode 2 is placed on the belt 12 rotated by the feed drive device 11, guided to the heating furnace 13, heated to 950°C or higher in the heating furnace, and then heated to a water temperature of 40°C.
The electrode 2 is continuously immersed in the water cooling tank 14 to be rapidly cooled, so that only a cuprous oxide film is formed on the surface of the electrode 2.
従来のジユメツト線においては、硼砂液を表面
に均一に塗布した後にもう一度バーナーあるいは
加熱炉で焼付けて硼砂ガラス層を生成させていた
が、第4図あるいは第5図のような異形の形状の
ものに硼砂液を塗布しようとしても均一に塗布す
ることは難しいため得られる硼砂ガラス層も不均
一なものしか得られなかつた。 In conventional diamond wires, the borax liquid was applied uniformly to the surface and then baked again in a burner or heating furnace to form a borax glass layer, but in the case of wires with irregular shapes as shown in Figures 4 and 5, Even if an attempt was made to apply a borax solution to the glass, it was difficult to apply it uniformly, and the resulting borax glass layer was only non-uniform.
しかし、この発明における第6図のような処理
方法を実施するならば如何なる異形であつても銅
表面は均一に加熱されるので次工程の水冷却で一
定の膜厚の亜酸化銅層が得られるのである。 However, if the treatment method of this invention as shown in Fig. 6 is carried out, the copper surface will be heated uniformly no matter how irregular the copper surface is, so a cuprous oxide layer of a constant thickness can be obtained in the next step of water cooling. It will be done.
このようにして得られるこの発明による電極表
面は、ガラス封止に有害な亜酸化銅皮膜の剥離や
疵がないため、ダイオードの信頼性として極めて
高いものが得られるのである。 The surface of the electrode according to the present invention obtained in this way is free from peeling and flaws of the cuprous oxide film that are harmful to glass sealing, so that extremely high reliability of the diode can be obtained.
この発明の方法にて得た電極と従来法による電
極を用いてガラス封止したのち、100℃、1.5%塩
酸液中に15分間浸漬したのちに生ずるガラス−ジ
ユメツト表面境界の軸方向での酸浸蝕深さを測定
したところ第7図AおよびBのような結果が得ら
れ、この発明による電極が第7図Bのように酸浸
蝕が著しく小さくてダイオードの信頼性が極めて
高いことが実証された。 After sealing the glass using the electrode obtained by the method of this invention and the electrode obtained by the conventional method, the electrode was immersed in a 1.5% hydrochloric acid solution at 100°C for 15 minutes. When the corrosion depth was measured, the results shown in Figures 7A and 7B were obtained, and it was demonstrated that the electrode according to the present invention had extremely little acid corrosion as shown in Figure 7B, and the reliability of the diode was extremely high. Ta.
第1図はリード線つきダイオードの断面図、第
2図はリードレスDHD型ダイオードの断面図、
第3図はこの発明で得られる電極の平面図、第4
図は同じく斜視図、第5図は同じく他の実施例を
示す斜視図、第6図はこの発明のDHD型ガラス
封止ダイオード電極の製造工程の一例を示す説明
図、第7図AおよびBは従来法とこの発明の方法
により得られた電極の夫々の酸浸蝕深さを示す図
表である。
2……電極、6……銅層、7……亜酸化銅層、
8……小径部、9……大径部。
Figure 1 is a cross-sectional view of a diode with a lead wire, Figure 2 is a cross-sectional view of a leadless DHD type diode,
Figure 3 is a plan view of the electrode obtained by this invention;
5 is a perspective view similarly showing another embodiment, FIG. 6 is an explanatory view showing an example of the manufacturing process of the DHD type glass-sealed diode electrode of the present invention, and FIGS. 7 A and B is a chart showing the acid corrosion depth of electrodes obtained by the conventional method and the method of the present invention. 2... Electrode, 6... Copper layer, 7... Cuprous oxide layer,
8...Small diameter part, 9...Large diameter part.
Claims (1)
たは成形加工して得られるリードレスダイオード
電極において、銅パイプを嵌合する方法によつて
銅層を被覆した後、伸線加工を施して得られる鉄
−ニツケル線を切断し、釘打ち加工または成形加
工した後に電極表面銅層に亜酸化銅皮膜を形成さ
せることを特徴とするDHD型ガラス封止ダイオ
ード電極の製造法。1. In a leadless diode electrode obtained by nailing or molding an electrode having a small diameter part and a large diameter part, a copper layer is coated by a method of fitting a copper pipe, and then a wire drawing process is performed. A method for manufacturing a DHD type glass-sealed diode electrode, which comprises cutting the obtained iron-nickel wire, nailing or forming the wire, and then forming a cuprous oxide film on the copper layer on the electrode surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP362682A JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP362682A JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58119661A JPS58119661A (en) | 1983-07-16 |
JPS636153B2 true JPS636153B2 (en) | 1988-02-08 |
Family
ID=11562701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP362682A Granted JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58119661A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04344863A (en) * | 1991-05-23 | 1992-12-01 | Kobe Steel Ltd | High pressure casting method for high quality casting material |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61156242U (en) * | 1985-03-18 | 1986-09-27 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57122555A (en) * | 1981-01-23 | 1982-07-30 | Toshiba Corp | Glass sealed metallic piece electrode |
-
1982
- 1982-01-11 JP JP362682A patent/JPS58119661A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57122555A (en) * | 1981-01-23 | 1982-07-30 | Toshiba Corp | Glass sealed metallic piece electrode |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04344863A (en) * | 1991-05-23 | 1992-12-01 | Kobe Steel Ltd | High pressure casting method for high quality casting material |
Also Published As
Publication number | Publication date |
---|---|
JPS58119661A (en) | 1983-07-16 |
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