JPH01257356A - Lead frame for semiconductor - Google Patents
Lead frame for semiconductorInfo
- Publication number
- JPH01257356A JPH01257356A JP8564588A JP8564588A JPH01257356A JP H01257356 A JPH01257356 A JP H01257356A JP 8564588 A JP8564588 A JP 8564588A JP 8564588 A JP8564588 A JP 8564588A JP H01257356 A JPH01257356 A JP H01257356A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- lead frame
- alloy layer
- oxide film
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000000956 alloy Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 18
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 11
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 11
- 229910052802 copper Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 11
- 229910017770 Cu—Ag Inorganic materials 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000013508 migration Methods 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 6
- 239000010953 base metal Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、銅または銅合金系リードフレームに関し、さ
らに詳しくはトランジスタやＩＣ等の半導体用リードフ
レームであり、特にＣｕ酸化被膜の密着性に優れた半導
体用リードフレームに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a copper or copper alloy lead frame, and more specifically to a lead frame for semiconductors such as transistors and ICs. Regarding excellent lead frames for semiconductors.
［従来技術］
一般に、半導体用リードフレームの材料は、主として銅
または銅合金が使用され、金属薄板からプレスやエツチ
ングによりリードフレームに成形される。このリードフ
レームのダイパッド上に半導体素子を搭載し、Ａｕ−５
ｔ等の共晶接合や半田付け、または導電ペースト等のろ
う材を用いてダイボンドにより接合する。つぎに、素子
上の電極とインナーリード部を超音波熱圧着等の方法に
よりＡｕ線あるいはＡＬ線を用いてワイヤボンド・ し
、最後にエポキシやシリコンなどの樹脂により封止する
方法により製造されている。[Prior Art] Generally, copper or a copper alloy is mainly used as the material for semiconductor lead frames, and the lead frames are formed from thin metal sheets by pressing or etching. A semiconductor element is mounted on the die pad of this lead frame, and the Au-5
They are joined by eutectic bonding such as T, soldering, or die bonding using a brazing material such as conductive paste. Next, the electrodes and inner leads on the element are wire-bonded using Au wire or AL wire using a method such as ultrasonic thermocompression bonding, and finally the device is sealed with a resin such as epoxy or silicon. There is.
このような半導体の組立工程において、リードフレーム
は高温にさらされる９例えばダイボンドは２００〜４５
０℃、ワイヤボンドは１００〜３５０℃の温度で行われ
る。こうしたボンディング時の熱によって表面が酸化さ
れる。これを防止するためには、ＡｕやＡｇ等の貴金属
によるめっが有効である。In such semiconductor assembly processes, lead frames are exposed to high temperatures9.For example, die bonding is exposed to
0°C, wire bonding is performed at a temperature of 100-350°C. The heat during bonding oxidizes the surface. To prevent this, plating with noble metals such as Au and Ag is effective.
しかし、全面に貴金属によるめっきを施すと高コストに
なり、現状では部分めっき、すなわち、リードフレーム
のダイパッド部およびインナーリード部にＡｕやＡｇな
どの貴金属をめっきする方法が一般的である。However, plating the entire surface with a noble metal increases the cost, and at present, partial plating, that is, a method in which the die pad portion and inner lead portion of the lead frame are plated with a noble metal such as Au or Ag is common.
また、部分めっきの場合、アウターリード部では銅また
は銅合金素材が表面に露出しており、銅が熱酸化されて
しまう。この銅の酸化被膜はリードフレームに対する密
着性が弱く、酸化被膜が剥離して素子や組立装置を汚染
し、半導体の電気障害を生ずる等、品質の低下を招いて
いた。Further, in the case of partial plating, the copper or copper alloy material is exposed on the surface of the outer lead portion, and the copper is thermally oxidized. This copper oxide film has poor adhesion to the lead frame, and the oxide film peels off, contaminating elements and assembly equipment, causing electrical failure of the semiconductor, and deteriorating quality.
上記のような課題を解決するために特開昭６２−１６３
３５３号公報に開示された発明がある。この発明は、Ａ
ｇスポットめっき部具外のリードフレーム表面全面にＡ
ｇめつき層を設けるというものである。しかし、この発
明は、Ａｇめっきがマイグレーションを起こしやすく、
また、高コストであるという課題を残している。In order to solve the above problems, JP-A-62-163
There is an invention disclosed in Publication No. 353. This invention is based on A.
A on the entire surface of the lead frame outside the g-spot plating parts.
This method involves providing a g-glazed layer. However, in this invention, Ag plating is prone to migration,
Furthermore, the problem of high cost remains.
［発明が解決しようとする課題］
従来技術には、リードフレームの組立工程におけるダイ
ボンド及びワイヤボンド時の熱処理の過程で剥れやすい
酸化被膜が形成することにより、品質が低下するという
課題が存在した。また、先に述べた特開昭６２−１６３
３５３号公報に開示された発明によっても、Ａｇめっき
がマイグレーションを起こしやすく、高コストであると
いう課題が、なおも存在した。そこで、これの課題を解
決するための手段が望まれていた。[Problem to be solved by the invention] The conventional technology had a problem in that quality deteriorated due to the formation of an oxide film that easily peeled off during the heat treatment process during die bonding and wire bonding in the lead frame assembly process. . In addition, the previously mentioned Unexamined Patent Publication No. 62-163
Even with the invention disclosed in Publication No. 353, there still existed the problem that Ag plating was prone to migration and was expensive. Therefore, a means to solve this problem has been desired.
本発明は、以上説明したような従来技術の問題点を解消
し、マイグレーションを生ずることなく、かつ、低コス
トであり、銅または銅合金の酸化被膜の密着性に優れた
半導体装置用リードフレームを提供する目的でなされた
ものである。The present invention solves the problems of the prior art as explained above, and provides a lead frame for semiconductor devices that does not cause migration, is low cost, and has excellent adhesion of a copper or copper alloy oxide film. This was done for the purpose of providing.
［課題を解決するための手段］
本発明は、銅または銅合金リードフレームの表面にＣｕ
−Ａｇ合金層を被覆してなり、該合金層のＡｇ含有量が
少なくとも０．００５ｗｔ％以上であり、かつ該合金層
の厚さが少なくとも０．１μｍ以上であることを特徴と
する半導体用リードフレームに要旨が存在する。[Means for Solving the Problems] The present invention provides Cu on the surface of a copper or copper alloy lead frame.
- A semiconductor lead coated with an Ag alloy layer, wherein the alloy layer has an Ag content of at least 0.005 wt%, and the alloy layer has a thickness of at least 0.1 μm. There is a gist in the frame.
［作用］
以下に本発明に係る半導体用リードフレームの作用につ
いて以下詳細に説明する。[Function] The function of the semiconductor lead frame according to the present invention will be described in detail below.
本発明の半導体用リードフレームは、課題を解決するた
めの手段の項で述べたように、表面にＣｕ−Ａｇ合金層
が被覆されている。これによりＣｕ酸化被膜のリードフ
レームに対する密着性が向上し、素子の電気障害等によ
る不良率を著しく低減することができる。As described in the section of means for solving the problems, the surface of the semiconductor lead frame of the present invention is coated with a Cu-Ag alloy layer. This improves the adhesion of the Cu oxide film to the lead frame, making it possible to significantly reduce the defective rate due to electrical failure of the device.
本発明におけるＣｕ−Ａｇ合金層の厚さは、少なくとも
０．１μｍ以上であることが必要である。０．１μｍ未
満である場合は、先に述べた高温の熱工程中にＣｕ−Ａ
ｇ合金層中へ母材元素が拡散し、酸化被膜のリードフレ
ームに対する密着性が低下するためである。The thickness of the Cu-Ag alloy layer in the present invention needs to be at least 0.1 μm or more. If it is less than 0.1 μm, Cu-A is removed during the high temperature thermal process mentioned above.
This is because the base material elements diffuse into the g-alloy layer, reducing the adhesion of the oxide film to the lead frame.
また、本発明に招けるＣｕ−Ａｇ合金層中のＡｇ含有量
を０．００５ｗｔ％以上とすることが望ましい、４５０
℃程度の高温に対しても実用的な効果を得られるＡｇ含
有量の下限がｏ、ｏｏｓｗｔ％であり、０．００５ｗｔ
％未溝の含有量では４５０℃程度の高温中でボンディン
グを行う上では効果的とは言えない。この点については
、実施例において具体的に述べる。Further, it is desirable that the Ag content in the Cu-Ag alloy layer used in the present invention is 0.005 wt% or more, 450
The lower limit of the Ag content that can obtain a practical effect even at high temperatures of about ℃ is o, ooswt%, which is 0.005wt%.
% ungrooved content cannot be said to be effective for bonding at a high temperature of about 450°C. This point will be specifically described in Examples.
なお、Ａｇ含有量が増加するにしたがって密着性は向上
するが、コスト面から考慮して、実用的には１０ｗｔ％
程度を上限とすることが望ましい。含有量をこれ以上に
高くしても、コストに見合うだけの効果は期待できない
からである。Note that adhesion improves as the Ag content increases, but from a cost perspective, it is practically recommended to use 10 wt%.
It is desirable to set an upper limit to This is because even if the content is made higher than this, an effect commensurate with the cost cannot be expected.
［実施例］
以下に本発明に係るリードフレームについて実施例を挙
げて説明する。[Example] The lead frame according to the present invention will be described below with reference to an example.
材料としてＣｕ−２，０ｗｔ％５ｎ−０，１ｗｔ％Ｆｅ
−０，０３ｗｔ％Ｐの銅合金を用い、エツチングにより
リードフレームを作成した。Cu-2,0wt%5n-0,1wt%Fe as material
A lead frame was created by etching using a -0.03 wt% P copper alloy.
上記試験片に、通常用いられるめっき前処理（アルカリ
脱脂−電解脱脂−酸洗）を行った後、後述する条件にて
Ｃｕ−Ａｇ合金をめっきした。The test piece was subjected to a commonly used plating pretreatment (alkaline degreasing, electrolytic degreasing, and pickling), and then plated with a Cu-Ag alloy under the conditions described below.
なお、めっき条件は以下の通りである。Note that the plating conditions are as follows.
くめつき条件〉
液組成 ＣｕＣＮ ６０〜６５ｇ／４２゜ＡｇＣＮ
５〜１００ｍｇ／ｌ。Bonding conditions〉 Liquid composition CuCN 60-65g/42゜AgCN
5-100mg/l.
ＫＣＮ ５０〜７０ ｇ／４２
温度 ２０〜２５℃
電流密度 ０．５〜２Ａ／ｄｒｎ’
次いで、ダイボンディングを想定した加熱によりめっき
表面を酸化させ、加熱後の酸化被膜のリードフレームへ
の密着性を粘着テープにょるピーリング試験で評価した
。KCN 50-70 g/42 Temperature 20-25°C Current density 0.5-2A/drn' Next, the plating surface was oxidized by heating assuming die bonding, and the adhesion of the oxide film to the lead frame after heating was evaluated. Evaluation was made by peeling test using adhesive tape.
第１表に実施例及び比較例のビーリング試験結果を示す
。第１表において、Ｎｏ、１〜Ｎｏ、４は本発明による
リードフレームの実施例であり、Ｎｏ、１〜Ｎｏ、３は
Ａｇ含有量が０．００５ｗｔ％以上の例、Ｎｏ、４は０
．００５ｗｔ％未満の例である。また、Ｎｏ、５は比較
例である。Table 1 shows the beering test results of Examples and Comparative Examples. In Table 1, No. 1 to No. 4 are examples of lead frames according to the present invention, No. 1 to No. 3 are examples with Ag content of 0.005 wt% or more, and No. 4 is 0.
．． This is an example of less than 0.005 wt%. Moreover, No. 5 is a comparative example.
本発明の実施例Ｎｏ、１〜Ｎｏ、３では加熱温度３００
〜４５０℃でいずれも密着性が良好であった。これは一
般に使用されるボンディングの温度の範囲で十分に実用
性を有するものである。特に、Ｎｏ、３では５００℃の
高温においても良好な密着性が得られた。In Examples No. 1 to No. 3 of the present invention, the heating temperature was 300.
All had good adhesion at temperatures between 450°C and 450°C. This is sufficiently practical within the generally used bonding temperature range. Particularly, in No. 3, good adhesion was obtained even at a high temperature of 500°C.
また、本発明の実施例Ｎｏ、４は３５０を以上では酸化
被膜は密着性不良となるが、３００ｔの熱に対しては良
好な結果を示した。すなわち、ボンディングの温度を３
００℃以内に限定すれば、十分な効果を発揮することに
なる。Further, in Example No. 4 of the present invention, the adhesion of the oxide film becomes poor when the temperature exceeds 350, but good results were shown against heat of 300 tons. In other words, the bonding temperature is 3
If the temperature is limited to 00°C or less, a sufficient effect will be exhibited.
また、これらの実施例において、マイグレーションの評
価を行った結果、Ｎｏ、１〜４はいずれも純Ｃｕと同等
の短絡寿命を有し、Ａｇめっきに比べて優れた結果が得
られた
比較例Ｎ００５はＣｕ−Ａｇ合金層の厚さが０．１μｍ
に満たない例であり、加熱時の母材元素の拡散により３
００℃以上で酸化被膜は密着性不良となる。In addition, as a result of evaluating migration in these Examples, Nos. 1 to 4 all had a short circuit life equivalent to that of pure Cu, and Comparative Example N005 obtained superior results compared to Ag plating. The thickness of the Cu-Ag alloy layer is 0.1 μm
3 due to diffusion of base metal elements during heating.
At temperatures above 00°C, the adhesion of the oxide film becomes poor.
なお、本発明におけるＣｕ−Ａｇ合金層は、めっき法、
蒸着法、スパッタ法、クラッド法等、いかなる方法によ
り形成してもよい。また、下地層としてＮｉ層またはＮ
ｉ合金層等を設けた上に形成しても効果を失うものでは
ない。Note that the Cu-Ag alloy layer in the present invention can be formed by plating,
It may be formed by any method such as a vapor deposition method, a sputtering method, a cladding method, etc. In addition, a Ni layer or N
Even if it is formed on an i-alloy layer or the like, the effect will not be lost.
［発明の効果］
以上に述べたように、本発明によれば、リードフレーム
の表面に形成される銅または銅合金の酸化膜の密着性を
高め、酸化膜の剥離を効果的に防止しすることを、マイ
グレーションを生じることなく、かつ低コストで行うこ
とが可能となり、素子の汚染による電気障害等の不良を
著しく減少することが可能となった。[Effects of the Invention] As described above, according to the present invention, the adhesion of the copper or copper alloy oxide film formed on the surface of the lead frame is improved, and peeling of the oxide film is effectively prevented. This has become possible without migration and at low cost, and it has become possible to significantly reduce defects such as electrical failures due to element contamination.
Claims (2)
Ａｇ合金層を被覆してなり、かつ該合金層の厚さが少な
くとも０．１μｍ以上であることを特徴とする半導体用
リードフレーム。(1) Cu-
A lead frame for a semiconductor, characterized in that the lead frame is coated with an Ag alloy layer, and the thickness of the alloy layer is at least 0.1 μm or more.
ｗｔ％以上であることを特徴とする請求項１記載の半導
体用リードフレーム。(2) The Ag content of the alloy layer is at least 0.005
The lead frame for semiconductor according to claim 1, characterized in that the content of the semiconductor lead frame is not less than wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8564588A JPH01257356A (en) | 1988-04-07 | 1988-04-07 | Lead frame for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8564588A JPH01257356A (en) | 1988-04-07 | 1988-04-07 | Lead frame for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01257356A true JPH01257356A (en) | 1989-10-13 |
Family
ID=13864557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8564588A Pending JPH01257356A (en) | 1988-04-07 | 1988-04-07 | Lead frame for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01257356A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03231839A (en) * | 1990-02-07 | 1991-10-15 | Sumitomo Special Metals Co Ltd | Copper-based lead frame material |
| US5167794A (en) * | 1990-04-16 | 1992-12-01 | Mitsubishi Denki Kabushiki Kaisha | Method for producing lead frame material |
| US5436082A (en) * | 1993-12-27 | 1995-07-25 | National Semiconductor Corporation | Protective coating combination for lead frames |
| EP0730296A2 (en) * | 1995-03-02 | 1996-09-04 | Dai Nippon Printing Co., Ltd. | Leadframe for plastic-encapsulated semiconductor device, semiconductor device using the same, and manufacturing method for the leadframe |
| DE19640256A1 (en) * | 1995-09-29 | 1997-04-03 | Dainippon Printing Co Ltd | Connecting frame for plastics embedded semiconductor component |
| US5650661A (en) * | 1993-12-27 | 1997-07-22 | National Semiconductor Corporation | Protective coating combination for lead frames |
| US5728285A (en) * | 1993-12-27 | 1998-03-17 | National Semiconductor Corporation | Protective coating combination for lead frames |
| JP2002294488A (en) * | 2001-03-29 | 2002-10-09 | Dowa Mining Co Ltd | Copper coating superior in oxidation resistance, forming method thereof, and electronic component therewith |
| JP2008028154A (en) * | 2006-07-21 | 2008-02-07 | Sumitomo Metal Mining Package Materials Co Ltd | Lead frame for optical semiconductor device |
-
1988
- 1988-04-07 JP JP8564588A patent/JPH01257356A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03231839A (en) * | 1990-02-07 | 1991-10-15 | Sumitomo Special Metals Co Ltd | Copper-based lead frame material |
| US5167794A (en) * | 1990-04-16 | 1992-12-01 | Mitsubishi Denki Kabushiki Kaisha | Method for producing lead frame material |
| US5650661A (en) * | 1993-12-27 | 1997-07-22 | National Semiconductor Corporation | Protective coating combination for lead frames |
| US5436082A (en) * | 1993-12-27 | 1995-07-25 | National Semiconductor Corporation | Protective coating combination for lead frames |
| US5728285A (en) * | 1993-12-27 | 1998-03-17 | National Semiconductor Corporation | Protective coating combination for lead frames |
| EP0730296A2 (en) * | 1995-03-02 | 1996-09-04 | Dai Nippon Printing Co., Ltd. | Leadframe for plastic-encapsulated semiconductor device, semiconductor device using the same, and manufacturing method for the leadframe |
| EP0730296A3 (en) * | 1995-03-02 | 1998-07-01 | Dai Nippon Printing Co., Ltd. | Leadframe for plastic-encapsulated semiconductor device, semiconductor device using the same, and manufacturing method for the leadframe |
| SG106554A1 (en) * | 1995-03-02 | 2004-10-29 | Dainippon Printing Co Ltd | Leadframe for plastic-encapsulated semiconductor device, semiconductor device using the same, and manufacturing method for the leadframe |
| DE19640256A1 (en) * | 1995-09-29 | 1997-04-03 | Dainippon Printing Co Ltd | Connecting frame for plastics embedded semiconductor component |
| US6034422A (en) * | 1995-09-29 | 2000-03-07 | Dai Nippon Printing Co., Ltd. | Lead frame, method for partial noble plating of said lead frame and semiconductor device having said lead frame |
| DE19640256B4 (en) * | 1995-09-29 | 2004-04-08 | Dai Nippon Printing Co., Ltd. | Lead frame, method for precious metal plating of the lead frame and semiconductor device with lead frame |
| JP2002294488A (en) * | 2001-03-29 | 2002-10-09 | Dowa Mining Co Ltd | Copper coating superior in oxidation resistance, forming method thereof, and electronic component therewith |
| JP2008028154A (en) * | 2006-07-21 | 2008-02-07 | Sumitomo Metal Mining Package Materials Co Ltd | Lead frame for optical semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4675243A (en) | Ceramic package for semiconductor devices | |
| JPH04115558A (en) | Lead frame for semiconductor device | |
| JPH01257356A (en) | Lead frame for semiconductor | |
| JP2000269398A (en) | Aluminum lead frame for semiconductor device and manufacture thereof | |
| JPS6396237A (en) | Material for electrically conductive parts of electronic and electrical appliance | |
| US4065588A (en) | Method of making gold-cobalt contact for silicon devices | |
| JPS584955A (en) | Package of gold-plated electronic parts | |
| JPS6242037B2 (en) | ||
| US4765528A (en) | Plating process for an electronic part | |
| JPS5936425B2 (en) | Lead frame structure with intermediate layer | |
| JPS63169056A (en) | Lead frame material | |
| JPH03237735A (en) | Tab tape | |
| JPS6218744A (en) | Lead frame | |
| JPS6353287A (en) | Ag-coated electric conductor | |
| JPS628532A (en) | Gold-plated electronic component package | |
| JPH04137552A (en) | Lead frame | |
| JPS6142941A (en) | Lead frame for semiconductor | |
| JPH08204081A (en) | Lead frame for semiconductor device, semiconductor device, and manufacturing method thereof | |
| JPS639957A (en) | Semiconductor lead frame | |
| JPH10163397A (en) | Manufacture of lead frame for semiconductor device | |
| JPH0674496B2 (en) | Lead frame material manufacturing method | |
| JPS60253107A (en) | Heat resistant ag coating conductor | |
| KR950008697B1 (en) | Tab tape | |
| JPH09116064A (en) | Lead frame material | |
| JP2794873B2 (en) | Circuit device |