JPS61139037A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61139037A
JPS61139037A JP59262324A JP26232484A JPS61139037A JP S61139037 A JPS61139037 A JP S61139037A JP 59262324 A JP59262324 A JP 59262324A JP 26232484 A JP26232484 A JP 26232484A JP S61139037 A JPS61139037 A JP S61139037A
Authority
JP
Japan
Prior art keywords
aluminium
bonded
water
exposed
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59262324A
Other languages
Japanese (ja)
Inventor
Yorihiro Uchiyama
内山　順博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59262324A priority Critical patent/JPS61139037A/en
Publication of JPS61139037A publication Critical patent/JPS61139037A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the disconnection in a portion where a gold lead is bonded to an aluminium, by forming a corrosion resistant alumina film on the surface portion of the aluminium pad where aluminium is exposed. CONSTITUTION:A gold lead 2 is bonded to an aluminium pad 1 at a joint 3, and PSG4 is formed therearound. This structure is dipped in pH7 pure water and the water is boiled in order to change the aluminium exposed on the surface of the aluminium pad where the lead not bonded into alumina. Since any acid contained in the water will corrode the aluminium, the pure water must be precisely controlled not to contain even the slightest quantity of acid. For this purpose, the water is controlled with respect to its pH such that the pH is maintained at 7. The package to which the lead has been bonded is dipped in this pure water and the water is boiled to 90-100 deg.C. The exposed aluminium pad portion, when dipped in this water, produces an alumina film 6 through chemical reaction.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置で金のリード線がボンデングされ
たアルミニウムパッド領域で、露出したアルミニウム表
面が湿度の影響により腐食され、その腐食が原因になっ
て、断線等が発生することを防止するアルミニウムパッ
ドの表面処理に関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention is directed to an aluminum pad area to which a gold lead wire is bonded in a semiconductor device, and the exposed aluminum surface is corroded due to the influence of humidity. The present invention relates to surface treatment of aluminum pads to prevent wire breakage and the like from occurring.

〔従来の技術〕[Conventional technology]

第２図は、半導体装置のアルミニウムパッド部に金のリ
ード線がボンデングされた状態を示す断面図である。FIG. 2 is a sectional view showing a gold lead wire bonded to an aluminum pad portion of a semiconductor device.

半導体装置のアルミニウムパッドｌがあり、このアルミ
ニウムパッドの厚みは１μｍ程度であるが、その部分に
、直径が約２５〜３０μｍ程度の金のリード線２が接続
部３でボンデングがなされており、その周囲には燐珪酸
ガラス（ＰＳＧ）４が形成されている。There is an aluminum pad 1 of a semiconductor device, and the thickness of this aluminum pad is about 1 μm, and a gold lead wire 2 with a diameter of about 25 to 30 μm is bonded to that part at a connection part 3. A phosphosilicate glass (PSG) 4 is formed around the periphery.

通常、アルミニウムパッド部にリード線がボンデングが
なされた後工程ではバンシヘーション保護等がなされな
いので、アルミニウムパッド部のボンデングがなされた
部分以外の領域５では、アルミニウム表面がそのまま露
出することになり、取り巻く雰囲気に湿度があると、露
出したアルミニウムが腐食されやすくなっている。Normally, banshihesion protection is not performed in the process after the lead wire is bonded to the aluminum pad, so in the region 5 other than the bonded part of the aluminum pad, the aluminum surface is exposed as it is, and the surrounding area is exposed. Exposed aluminum is susceptible to corrosion if the atmosphere is humid.

特に、このボンデング部分の湿度が高くなると、その水
分が周囲のＰＳＧ等と化学反応すると、燐が高い湿度の
水分に熔解して酸性になるため、この酸性液によりアル
ミニウム表面が酸化腐食されて内部にも浸食し、遂にボ
ンデング部分のアルミニウムをも腐食して、リード線を
断線することになる。In particular, when the humidity in this bonding area becomes high, the moisture reacts chemically with the surrounding PSG, etc., and the phosphorus dissolves in the high humidity moisture and becomes acidic. This acidic liquid oxidizes the aluminum surface and causes internal corrosion. Eventually, the aluminum in the bonding area will corrode, causing the lead wire to break.

一般に、アルミニウムと金とがボンデングの結果、両者
の間に金属間化合物が生成されるが、この金属間化合物
は脆性であり、界面の結合力が強固でないため、上記の
露出しているアルミニウムバンド部からの腐食がボンデ
ング部にまで進行すると、ボンデングの結合力は忽ち劣
化する傾向がある。Generally, as a result of bonding between aluminum and gold, an intermetallic compound is formed between the two, but this intermetallic compound is brittle and the bonding force at the interface is not strong, so the exposed aluminum band When corrosion from the bonding part progresses to the bonding part, the bonding strength tends to deteriorate immediately.

このように従来方法ではボンデング部分の断線の５念が
あり、特に最近のように経済性の観点から半導体装置の
パッケージがセラミック系のものより、プラスチック系
のモールド型が多く使用されるようになると、湿度によ
るボンデング部の腐食が大きな問題になっている。In this way, conventional methods have the risk of disconnection at the bonding part, especially in recent years when plastic molds are being used more often than ceramic packages for semiconductor device packages due to economic reasons. Corrosion of bonding parts due to humidity has become a major problem.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記の構成の半導体装置では、アルミニウムパッドとリ
ード線をボンデングした部分では、アルミニウムが露出
した領域が耐湿性がなく、その露出したアルミニウム部
分が腐食することが問題点であり、その腐食が順次進行
してボンデング部分にまで及び遂にリード線が断線する
という不具合が発生する。In the semiconductor device with the above configuration, the problem is that the area where the aluminum pad is bonded to the lead wire has no moisture resistance, and the exposed aluminum area corrodes, and the corrosion progresses gradually. This leads to the problem that the lead wires eventually break when the wires reach the bonding area.

〔問題点を解決するための手段〕 本発明は、上記問題点を解消した半導体装置の製造方法
を提供するもので、その手段は、リード線がボンデング
されたアルミニウムバンドのアルミニウムが露出してい
る表面に、アルミナ膜を形成して耐蝕性にした半導体装
置によって達成できる。[Means for Solving the Problems] The present invention provides a method for manufacturing a semiconductor device that eliminates the above-mentioned problems. This can be achieved by using a semiconductor device that has an alumina film formed on its surface to make it corrosion resistant.

〔作用〕[Effect]

本発明は、半導体装置のアルミニウムのパッドとリード
線をボンデングをした後の、アルミニウムパッド部のボ
ンデングされていない露出した部分が湿度により腐食し
て、遂にボンデング部分までが断線するという問題かあ
るために、従来は、ボンデングが終了後は、ウェット洗
浄を避けるのが普通であるが、本発明では、金のリード
線がアルミニウムのパッドにボンデングされた後に、パ
・７ケージをＰＨ値が７の純水で沸騰煮沸することによ
り、露出しているアルミニウムパッドの表面を予め耐腐
食性のあるアルミナ化してしまうことにより、ボンデン
グ部を湿度に対し耐蝕性にするように考慮したものであ
る。The present invention solves the problem that after bonding the aluminum pad and lead wire of a semiconductor device, the unbonded exposed portion of the aluminum pad portion corrodes due to humidity, and the bonded portion eventually breaks. Conventionally, it is common to avoid wet cleaning after bonding is completed, but in the present invention, after the gold lead wires are bonded to the aluminum pads, the PA-7 cage is cleaned at a pH of 7. By boiling with pure water, the surface of the exposed aluminum pad is previously converted into corrosion-resistant alumina, thereby making the bonding part corrosion-resistant against humidity.

〔実施例〕〔Example〕

第１図は本発明の詳細な説明するための半導体装置のパ
ッド部にボンデングをした断面図である。FIG. 1 is a sectional view showing bonding to a pad portion of a semiconductor device for explaining the present invention in detail.

半導体装置にアルミニウムパッド１があり、このアルミ
ニウムパッド部に、金のリード線２が接続部３でボンデ
ングがなされており、その周囲にＰＳＧ４が形成されて
いる。A semiconductor device has an aluminum pad 1, a gold lead wire 2 is bonded to the aluminum pad portion at a connection portion 3, and a PSG 4 is formed around the aluminum pad portion.

本発明は、ボンデングがなされていないアルミニウムパ
ッド部の露出部分の表面をアルミナ化するために、ＰＨ
値が７の純水に浸漬して沸騰させるようにしたものであ
る。The present invention uses PH
It is immersed in pure water with a value of 7 and brought to a boil.

この際の純水は、酸性があるとアルミニウムが腐食され
てしまうために、絶対に酸性であってはならず、純水の
管理が必要であるので、ＰＨの管理を行ない、ＰＨ＝７
を維持してボンデング後のバ・ノケージを純水に浸漬し
沸騰させる。The pure water at this time must never be acidic, as aluminum will corrode if it is acidic, and it is necessary to manage the pure water.
After bonding, soak the bar cage in pure water and bring it to a boil.

一般に、純水としてはイオン交換水などが使用されるが
、炭酸ガス（ＣＯ２）を含有するとＰＨ値が６６９程度
になって、僅かに酸性を呈するので管理を十分にする必
要がある。Generally, ion-exchange water is used as pure water, but if it contains carbon dioxide (CO2), the pH value will be around 669, making it slightly acidic, so it must be carefully managed.

本発明による、９０℃〜１００℃に沸騰された純水に浸
漬された、露出したアルミニウムのパッド部は、下記の
化学反応によりアルミナ膜６を生成する。According to the present invention, the exposed aluminum pad portion immersed in pure water boiled at 90° C. to 100° C. produces an alumina film 6 through the following chemical reaction.

Ａ　ｔ２４　Ｈ２０−Ａ　ｌ　（ＯＨ）　ａＡｌ　（Ｏ
Ｈ）ａ　　Ａ１２０ｓ　＋Ｈ２０このように、純水のＨ
２Ｏによって生成されたアルミナは、低温で生成される
ためにアルミナ膜表面が滑らかであり安定な生成膜にな
る。A t24 H20-A l (OH) aAl (O
H)a A120s +H20 In this way, H of pure water
Since the alumina produced by 2O is produced at a low temperature, the surface of the alumina film is smooth and the resulting film is stable.

又、アルミナがアルミニウムの表面に生成される温度が
、純水の沸騰温度であるために低温のために、比較的結
合の弱いボンデング部分に全（影響を与えることがない
。In addition, since the temperature at which alumina is generated on the surface of aluminum is the boiling temperature of pure water, it does not affect the bonding portion where the bond is relatively weak.

この純水を沸騰させてアルミナを形成する方法の他の利
点として、半導体の製造工程の前工程で、バターニング
で使用する現像液、エツチング液、剥離液等の薬品には
、四塩化炭素、塩素、三塩化硼素などが含まれており、
これらの薬品を使用した後に僅かに残渣が残ることが多
いが、本発明の純水浸漬と沸騰により、これらの残渣も
完全に除去する効果がある。Another advantage of this method of boiling pure water to form alumina is that in the pre-process of the semiconductor manufacturing process, chemicals such as developing solution, etching solution, and stripping solution used in buttering include carbon tetrachloride, Contains chlorine, boron trichloride, etc.
Although slight residues often remain after using these chemicals, the immersion and boiling in pure water of the present invention has the effect of completely removing these residues.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、本発明は半導体装置におけ
るアルミニウムパッドと金のリード線のボンデング部分
の断線を防止し、半導体装置の信頼性の向上に供し得る
という効果大なるものがある。As described above in detail, the present invention has the great effect of preventing disconnection of the bonded portion between an aluminum pad and a gold lead wire in a semiconductor device, thereby improving the reliability of the semiconductor device.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の半導体装置のパッド部のボンデングを
説明するための断面図、 第２図は従来の半導体装置のパッド部のボンデングを説
明するための断面図、 図において、１はアルミニウムパッド、２は金のリード
線、３はボンデング部、４はＰＳＧ、５は露出している
アルミニウムの表面、６はアルミニウム表面に生成され
たアルミナ膜面、をそれぞれ示す。 第１図 第２図FIG. 1 is a cross-sectional view for explaining bonding of a pad portion of a semiconductor device of the present invention. FIG. 2 is a cross-sectional view for explaining bonding of a pad portion of a conventional semiconductor device. In the figure, 1 is an aluminum pad. , 2 is a gold lead wire, 3 is a bonding part, 4 is PSG, 5 is an exposed aluminum surface, and 6 is an alumina film surface formed on the aluminum surface. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 　リード線がボンデングされたアルミニウムパッドのア
ルミニウムが露出している表面にアルミナ膜を形成して
耐蝕性にしたことを特徴とする半導体装置。A semiconductor device characterized in that an alumina film is formed on the exposed aluminum surface of an aluminum pad to which a lead wire is bonded to provide corrosion resistance.
JP59262324A 1984-12-11 1984-12-11 Semiconductor device Pending JPS61139037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59262324A JPS61139037A (en) 1984-12-11 1984-12-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59262324A JPS61139037A (en) 1984-12-11 1984-12-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61139037A true JPS61139037A (en) 1986-06-26

Family

ID=17374187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59262324A Pending JPS61139037A (en) 1984-12-11 1984-12-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61139037A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device

Similar Documents

Publication Publication Date Title
KR900007303B1 (en) Resin packed semiconductor device
KR0133869B1 (en) Chemically etching method of semiconductor device
JP2563652B2 (en) Semiconductor device and manufacturing method thereof
JP5056862B2 (en) Manufacturing method of semiconductor sensor
JPH0239865B2 (en)
JPS61139037A (en) Semiconductor device
JP2006196648A (en) Electronic component having external junction electrode and manufacturing method thereof
JPS5917252A (en) Manufacture of semiconductor device
JPH03222465A (en) Lead frame and its manufacture
JPS5998534A (en) Semiconductor device
JPS60150657A (en) Resin molded semiconductor device
JPH0587017B2 (en)
JPH0546978B2 (en)
JPS59188928A (en) Process of sheathing for semiconductor device
JPS6227749B2 (en)
JPS62173748A (en) Manufacture of lead frame for semiconductor
JPH0478173B2 (en)
JPS6226834A (en) Manufacture of semiconductor device
JPS60221585A (en) Removing method of nickel oxide film
JPS6035548A (en) Lead frame and electronic parts using it
JPH04215463A (en) Method of plating terminal of glass-sealed package
JPH0240928A (en) Resin sealing type semiconductor device
JPS63269541A (en) Semiconductor device
JPS63272042A (en) Semiconductor device
JPS5833848A (en) Semiconductor device