JPH0240928A - Resin sealing type semiconductor device - Google Patents
Resin sealing type semiconductor deviceInfo
- Publication number
- JPH0240928A JPH0240928A JP63191625A JP19162588A JPH0240928A JP H0240928 A JPH0240928 A JP H0240928A JP 63191625 A JP63191625 A JP 63191625A JP 19162588 A JP19162588 A JP 19162588A JP H0240928 A JPH0240928 A JP H0240928A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- opening
- ball
- bonding wire
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000011347 resin Substances 0.000 title abstract description 13
- 229920005989 resin Polymers 0.000 title abstract description 13
- 238000007789 sealing Methods 0.000 title abstract description 3
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
- H01L2224/02125—Reinforcing structures
- H01L2224/02126—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置に関し、特に耐湿性に優
れたワイヤボンディング構造の樹脂封止型半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device with a wire bonding structure that has excellent moisture resistance.
従来のワイヤボンディング構造の樹脂封止型半導体装置
は、第３図にそのボンディングパッド部の構造を示すよ
うに、半導体基板１１のシリコン酸化Ｍ１２上にアルミ
ニウム配４１１３を形成し、このアルミニウム配線１３
上の保護膜１４の一部を開口１４ａしてアルミニウム配
線１３を露出することによりボンディングパッド部を構
成している。そして、このボンディングパッド部にボン
ディングワイヤ１５の一端を接続し、かつその他端をパ
ッケージ等の外部導出リードに接続することにより電気
的な接続を行い、かつ全体を樹脂で封止することにより
半導体装置を構成している。In a conventional resin-sealed semiconductor device having a wire bonding structure, an aluminum interconnect 4113 is formed on a silicon oxide M12 of a semiconductor substrate 11, as shown in FIG. 3, which shows the structure of the bonding pad portion.
A bonding pad portion is formed by opening a portion of the upper protective film 14 to expose the aluminum wiring 13. Then, electrical connection is made by connecting one end of the bonding wire 15 to this bonding pad part and connecting the other end to an external lead of a package, etc., and by sealing the entire thing with resin, the semiconductor device It consists of
上述した従来の半導体装置では、ワイヤボンディング位
置の位置ずれ等に対処するために、ボンディングパッド
部の保護膜１４の開口１４ａの形状は、方形でかつボン
ディングワイヤ１５のボール１５ａの径寸法に比較して
十分大きい寸法に形成している。このため、ボンディン
グワイヤのボール１５ａの周囲において、ボンディング
パッド部のアルミニウムが露呈された状態で樹脂封止さ
れることになる。In the conventional semiconductor device described above, in order to cope with misalignment of the wire bonding position, the shape of the opening 14a of the protective film 14 of the bonding pad portion is rectangular and has a diameter dimension that is smaller than the diameter of the ball 15a of the bonding wire 15. It is formed to a sufficiently large size. Therefore, around the ball 15a of the bonding wire, the aluminum of the bonding pad portion is exposed and sealed with resin.
一般に樹脂は水分を僅かではあるが透過させる性質があ
るため、不純物を含んだ樹脂を使用したり、不純物を含
んだ湿気中で稼働させると、腐蝕性の水分が樹脂を通し
てボンディングパッド部の露出面に到達し、アルミニウ
ムを腐蝕させ、場合によっては断線させて不良を発生す
るという問題が生じる。In general, resins have the property of allowing water to pass through them, albeit in a small amount, so if resins containing impurities are used or operated in humid environments containing impurities, corrosive water will pass through the resin to the exposed surface of the bonding pad. This causes problems such as corrosion of the aluminum and, in some cases, wire breakage, resulting in defects.
本発明は樹脂を通して侵入される水分からボンディング
パッドの腐蝕を防止して、不良の発生を未然に防止する
樹脂封止型半導体装置を提供することを目的としている
。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed semiconductor device that prevents corrosion of bonding pads from moisture penetrating through the resin, thereby preventing the occurrence of defects.
本発明の樹脂封止型半導体装置は、アルミニウム配線を
覆う保護膜の一部を開口し、この開口部分にアルミニウ
ム配線を露出させてボンディングパッドを構成する半導
体装置において、その保護膜の開口をボンディングワイ
ヤのボールよりも小さい面積の形状に形成し、該ボンデ
ィングワイヤのボールで開口を被覆するように構成して
いる。The resin-sealed semiconductor device of the present invention is a semiconductor device in which a part of a protective film covering an aluminum wiring is opened and the aluminum wiring is exposed in this opening to form a bonding pad, and the opening of the protective film is used for bonding. The bonding wire ball is formed to have a smaller area than the wire ball, and the opening is covered with the bonding wire ball.
上述した構成では、アルミニウム配線はボンディングワ
イヤのボールによって被覆されてアルミニウム面が露出
されることがないので、樹脂を通して半導体装置内に侵
入される水分がアルミニウム配線にまで到達することは
な（、アルミニウム配線の腐蝕を防止する。In the above configuration, the aluminum wiring is covered by the bonding wire balls and the aluminum surface is not exposed, so moisture that enters the semiconductor device through the resin will not reach the aluminum wiring ( Prevents corrosion of wiring.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図及び第２図は本発明の一実施例を示しており、第
２図は要部の平面図、第１図はそのＡ−Ａ線に沿う断面
図である。図において、半導体基板１の上面のシリコン
酸化膜２上にはアルミニウム配線３を形成し、このアル
ミニウム配線３の一部にボンディングパッド部を構成し
ている。そして、このアルミニウム配線３上の保護膜４
の一部を開口４ａすることによりアルミニウム配線３を
ボンディングパッド部で一部露出させている。ここで、
保護膜４の開口４ａの形状は、ボンディングワイヤ５の
ボール５ａの径寸法よりも若干率さい円形に設定してい
る。なお、ボンディングワイヤ５には腐蝕に強い金や金
合金を用いている。1 and 2 show one embodiment of the present invention, FIG. 2 is a plan view of the main part, and FIG. 1 is a sectional view taken along the line A-A. In the figure, an aluminum wiring 3 is formed on a silicon oxide film 2 on the upper surface of a semiconductor substrate 1, and a bonding pad portion is formed in a part of this aluminum wiring 3. Then, a protective film 4 on this aluminum wiring 3
By forming an opening 4a in a portion of the aluminum wiring 3, a portion of the aluminum wiring 3 is exposed at the bonding pad portion. here,
The shape of the opening 4a of the protective film 4 is set to be a circular shape that is slightly smaller than the diameter of the ball 5a of the bonding wire 5. Note that the bonding wire 5 is made of gold or gold alloy, which is resistant to corrosion.
この構成によれば、ボンディングパッド部にボンディン
グワイヤ５を接続したときには、ボンディングワイヤ５
のボール５ａが保護膜４の開口４ａを塞ぐ形でアルミニ
ウム配線３に接続されることになる。このため、アルミ
ニウム配線３はボンディングワイヤ５によって被覆され
、アルミニウム配線３がボンディングワイヤ５の周囲位
置で露出されることは全くない。したがって、この半導
体装置を樹脂封止した後に、樹脂を通して不純物を含む
水分がボンディングパッド部にまで到達しても、水分が
直接アルミニウム配線３に接触されることはなく、アル
ミニウム配線３の腐蝕を防止する。これにより、この腐
蝕による断線を有効に防止し、半導体装置の耐湿性を向
上させる。According to this configuration, when the bonding wire 5 is connected to the bonding pad portion, the bonding wire 5
The balls 5a are connected to the aluminum wiring 3 so as to close the openings 4a of the protective film 4. Therefore, the aluminum wiring 3 is covered with the bonding wire 5, and the aluminum wiring 3 is never exposed around the bonding wire 5. Therefore, even if moisture containing impurities reaches the bonding pad portion through the resin after this semiconductor device is sealed with resin, the moisture will not come into direct contact with the aluminum wiring 3, thereby preventing corrosion of the aluminum wiring 3. do. This effectively prevents wire breakage due to this corrosion and improves the moisture resistance of the semiconductor device.
なお、保護膜４の開口４ａの平面形状は円形に近い多角
形（例えば、六角形）に形成してもよい。Note that the planar shape of the opening 4a of the protective film 4 may be formed into a polygon (for example, a hexagon) close to a circle.
以上説明したように本発明は、ポンプイングツくラドを
構成するために形成する保護膜の開口を、ボンディング
ワイヤのボールよりも小さい面積の形状に形成し、かつ
この開口をボンディングワイヤのボールで被覆するよう
に構成しているので、アルミニウム配線はボンディング
ワイヤのボールによって被覆されてその表面が露出され
ることがない。このため、樹脂を通して半導体装置内に
侵入される水分がアルミニウム配線に接触することはな
く、アルミニウム配線の腐蝕を防止し、アルミニウム配
線の断線による不良の発生を未然に防止できる効果があ
る。As explained above, in the present invention, the opening of the protective film formed to constitute the pumping pad is formed in a shape smaller in area than the ball of the bonding wire, and the opening is covered with the ball of the bonding wire. With this structure, the aluminum wiring is covered with the bonding wire balls and its surface is not exposed. Therefore, moisture entering the semiconductor device through the resin does not come into contact with the aluminum wiring, thereby preventing corrosion of the aluminum wiring and preventing defects due to disconnection of the aluminum wiring.
第１図は本発明の一実施例を示し、第２図のＡ−Ａ線に
沿う断面図、第２図は第１図の実施例の平面図、第３図
は従来構造の断面図である。
１．１１・・・半導体基板、２．１２・・・シリコン酸
化膜、３，１３・・・アルミニウム配線、４．１４・・
・保護膜、４ａ、１４ａ・・・開口、５，１５・・・ボ
ンデイ第
図
５ 庄、゛°ンテネン２バクイヤ
第２
図
ａFig. 1 shows an embodiment of the present invention; Fig. 2 is a sectional view taken along line A-A in Fig. 2; Fig. 2 is a plan view of the embodiment shown in Fig. 1; and Fig. 3 is a sectional view of a conventional structure. be. 1.11...Semiconductor substrate, 2.12...Silicon oxide film, 3,13...Aluminum wiring, 4.14...
・Protective film, 4a, 14a... Opening, 5, 15... Bondi Figure 5 Sho, Entenen 2 Bakiya Figure 2 a
Claims (1)
膜の一部を開口してアルミニウム配線を露出させ、この
露出部分にボンディングパッドを構成してボンディング
ワイヤを接続してなる樹脂封止型半導体装置において、
前記保護膜の開口をボンディングワイヤのボールよりも
小さい面積の形状に形成し、該ボンディングワイヤのボ
ールで前記開口を被覆するように構成したことを特徴と
する樹脂封止型半導体装置。1. A resin-sealed semiconductor device in which a part of a protective film covering aluminum wiring provided on a semiconductor substrate is opened to expose the aluminum wiring, and a bonding pad is formed in this exposed portion to connect a bonding wire. In,
A resin-sealed semiconductor device characterized in that the opening in the protective film is formed to have a smaller area than the ball of the bonding wire, and the opening is covered with the ball of the bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63191625A JPH0240928A (en) | 1988-07-30 | 1988-07-30 | Resin sealing type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63191625A JPH0240928A (en) | 1988-07-30 | 1988-07-30 | Resin sealing type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0240928A true JPH0240928A (en) | 1990-02-09 |
Family
ID=16277756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63191625A Pending JPH0240928A (en) | 1988-07-30 | 1988-07-30 | Resin sealing type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0240928A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891745A (en) * | 1994-10-28 | 1999-04-06 | Honeywell Inc. | Test and tear-away bond pad design |
| JP2008187109A (en) * | 2007-01-31 | 2008-08-14 | Toshiba Corp | Stacked semiconductor device and method of manufacturing the same |
| JP2010039211A (en) * | 2008-08-05 | 2010-02-18 | Fujitsu Ltd | Display device and method for manufacturing the same |
-
1988
- 1988-07-30 JP JP63191625A patent/JPH0240928A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891745A (en) * | 1994-10-28 | 1999-04-06 | Honeywell Inc. | Test and tear-away bond pad design |
| JP2008187109A (en) * | 2007-01-31 | 2008-08-14 | Toshiba Corp | Stacked semiconductor device and method of manufacturing the same |
| US8039970B2 (en) | 2007-01-31 | 2011-10-18 | Kabushiki Kaisha Toshiba | Stacked semiconductor device and method of manufacturing the same |
| JP2010039211A (en) * | 2008-08-05 | 2010-02-18 | Fujitsu Ltd | Display device and method for manufacturing the same |
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