JPS6035548A - Lead frame and electronic parts using it - Google Patents
Lead frame and electronic parts using itInfo
- Publication number
- JPS6035548A JPS6035548A JP14386483A JP14386483A JPS6035548A JP S6035548 A JPS6035548 A JP S6035548A JP 14386483 A JP14386483 A JP 14386483A JP 14386483 A JP14386483 A JP 14386483A JP S6035548 A JPS6035548 A JP S6035548A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- glass
- sealing
- aluminum
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明はリードフレームおよびそれを用いて成るセラミ
ックガラス封止型または樹脂封止型電子部品に関し、特
にガラス封止型半導体装置のアルミニウムクラッドの形
成技術およびその除去技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a lead frame and a ceramic glass-sealed or resin-sealed electronic component using the lead frame, and particularly to a technology for forming an aluminum cladding of a glass-sealed semiconductor device and Regarding its removal technology.
第１図にサーディプ形パンケージと称されるガラス封止
型半導体装置の一例を示し、また第２図にこのようなパ
ッケージに使われるリードフレームの従来例を示す。FIG. 1 shows an example of a glass-sealed semiconductor device called a cerdip type package, and FIG. 2 shows a conventional example of a lead frame used in such a package.
このリードフレームはその一部（１個分）を示したもの
で、一般に左右方向に連続した形態になっており、半導
体の組立、ガラス封止後には、−個一個に切断成形され
、第１図に示すようなパノケージとして完成される。This lead frame is a part (one piece) shown, and is generally continuous in the left and right direction. After semiconductor assembly and glass sealing, the lead frame is cut and molded one by one. It is completed as a panocage as shown in the figure.
第２図にて、１はインナーリードと呼ばれる部分で、半
導体素子と、コネクタワイヤ例えばＡ、８細線でボンデ
ィングし、接続される部分である。In FIG. 2, reference numeral 1 denotes a portion called an inner lead, which is connected to a semiconductor element by bonding with a connector wire, for example, an A-8 thin wire.
また、２はアウターリード（外部リード）と呼ばれる部
分で、ガラス封着しパッケージが完成した後も外部に出
ており、実装基板例えばプリント配線基板へ半田接続す
る部分である。さらに、３および４は連続したＩ Ｃ（
Ｉｎｔｅｇｒａｔｅｄ Ｃ１ｒｃｕｉｔ’）−個分のフ
レームを連結している部分で、ＩＣが最終的に完成した
時には切断される。また、第２図中、点線で囲った５０
部分は半導体装置を構成する、例えばセラミックより構
成されるベースおよびキャップが重なる部分を示し、こ
の線より内側がガラスで封着される。Moreover, 2 is a part called an outer lead (external lead), which is exposed to the outside even after the glass sealing and the package is completed, and is a part that is soldered to a mounting board, for example, a printed wiring board. Furthermore, 3 and 4 are consecutive ICs (
Integrated C1rcuit') - A portion that connects individual frames, and is cut when the IC is finally completed. Also, in Figure 2, 50
The portion indicates a portion where a base and a cap made of ceramic, for example, which constitute a semiconductor device overlap, and the inside of this line is sealed with glass.
かかるリードフレームを用い、半導体素子を搭載し、ワ
イヤボンディングし封止後完成された半導体装置の例は
第１図に示すとおりであり、第１図にて６はキャップ％
７はガラス、８はペース、９はコネクタワイヤである。An example of a completed semiconductor device using such a lead frame, mounting a semiconductor element, wire bonding, and sealing is shown in FIG. 1, where 6 is the cap%.
7 is glass, 8 is paste, and 9 is connector wire.
（特開１１１８５３−８７１６８号公報）。(Unexamined Japanese Patent Publication No. 111853-87168).
ところで、第２図にて、インナーリード１とフレーム連
結部３上斜線で示すアルミクラッドと称される帯状のア
ルミニウム被膜を設けることが考えられる。第２図に示
すように、リードフレームでは、インナーリード１とフ
レーム連結部３のみにアルミクラッドがなされて℃・る
。このアルミクラッドを形成する主たる目的は、前記し
たボンディングにお℃・てアルミニウムの超音波ボンデ
ィングを容易にするためである。先に述べたように、ア
ウターリード部２は半田接続が行われる部分であり、し
たがって、このアルミクラッドがアウターリード部２に
までかかっているとリードの半田接続が困難になる。そ
こで、部分的なアルミクラッドを施すのが良いと考えら
れる。しかも、フレームの打抜き加工においては、リー
ドの半田接続が困難にならないように、したがってアル
ミクラッドのストライプがフレームの中央にくるように
精度よく加工する必要があり、部分クラッドを施す場合
にも精度よく施す必要があり、この部分クラッドはコス
トの高いものになる。By the way, it is conceivable to provide a strip-shaped aluminum coating called an aluminum clad, which is indicated by diagonal lines above the inner lead 1 and the frame connecting portion 3 in FIG. As shown in FIG. 2, in the lead frame, aluminum cladding is applied only to the inner leads 1 and the frame connecting portions 3. The main purpose of forming this aluminum cladding is to facilitate the ultrasonic bonding of aluminum at ℃ temperature. As mentioned above, the outer lead portion 2 is a portion to which solder connections are made, and therefore, if this aluminum cladding extends to the outer lead portion 2, solder connection of the leads becomes difficult. Therefore, it is considered better to apply partial aluminum cladding. Moreover, when punching the frame, it is necessary to perform the process with high precision so that the aluminum clad stripe is centered on the frame so that the solder connection of the leads will not be difficult. This partial cladding is expensive.
また、このようなリードフレームを用いた半導体パッケ
ージは、完成後リードに錫メッキを施すのが一般的であ
るが、ガラス封着は４００〜５００Ｃの空気中又は酸素
中で行われるため、リード表面が強く酸化され、酸化被
膜を形成する。この酸化被膜は非常に緻密１強固なので
簡単な酸処理では除去できず、このことが、この製品の
完成品メッキ自動化の障害となって（・た。In addition, in semiconductor packages using such lead frames, the leads are generally tin-plated after completion, but since glass sealing is done in air or oxygen at 400 to 500 C, the lead surface is is strongly oxidized and forms an oxide film. This oxide film is so dense and strong that it cannot be removed by simple acid treatment, and this is an obstacle to automated plating of finished products for this product.
本発明はかかる従来技術の有する欠点を解消したリード
フレームおよび当該リードフレームを用い、制止後には
このリードフレームに施したアルミクラッドな容易に除
去することにより、封止強度を向上させ、同時に封止時
にリードが酸化するのを防止し、封止後の酸処理を容易
にするガラス又は樹脂封止型電子部品を提供することを
目的としたものである。The present invention uses a lead frame that eliminates the drawbacks of the prior art and the lead frame, and the aluminum cladding applied to the lead frame is easily removed after sealing, thereby improving the sealing strength and at the same time sealing. The object of the present invention is to provide a glass or resin-sealed electronic component that prevents leads from being oxidized and facilitates acid treatment after sealing.
本発明の前記ならびＫそのほかの目的と新規な特徴は１
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention are 1.
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のりも代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、リードフレームにつ℃・て、部分クラッドで
はな（、リードフレームの片面又は両面全表面にアルミ
ニウム又はアルミニウム系合金よりブよる被膜を形成し
、これにより部分クラッドのごとく高精度であることが
要求されず容易にリードフレームが得られる。In other words, the lead frame is not partially clad (a film made of aluminum or an aluminum alloy is formed on the entire surface of one or both sides of the lead frame, and as a result, it is possible to achieve high precision like a partial clad). Lead frames can be easily obtained without any requirements.
近時、半導体チップは増々犬形化しており、一方、リー
ド幅は実装基板への実装上規格化されており、第２図に
示されるようなガラス封着部の幅が狭くなっている。Recently, semiconductor chips have become more and more dog-shaped, and on the other hand, the lead width has been standardized for mounting on a mounting board, and the width of the glass sealing part as shown in FIG. 2 has become narrower.
本発明者らの検討によれば、Ａ！とガラスとの封着性は
良く、Ａ２クラッドをアウターリード２部分にも施すこ
とにより、封着強度が向上することが判った。この点、
従来は、部分クラッドとしせっかく封着性のよ（・とこ
ろを残していないということになる。According to the inventors' study, A! It was found that the sealing properties between the lead and the glass were good, and that the sealing strength was improved by applying A2 cladding to the outer lead 2 portion as well. In this point,
In the past, only partial cladding was used, which meant that there was no sealing ability left.
また、Ａ４クラッドを全面に施すことにより、リード表
面にはＡ、６クラツドが被着されているので、封止時に
は４２７０イ等リード本体が酸化されることがなく、緻
密、強固なリード表面の酸化膜の除去を必要とせず、メ
ッキ自動化も可能であることが判った。ガラス封着後に
はアウターリード部２ＩＫ、残るＡ、６クラソドは、完
成品メッキ前に完全に除去しなければならないが、本発
明者は硫酸系のエッチ液を使用することにより容易に除
去できることを見い出し、上記目的を達成した。In addition, by applying A4 cladding to the entire surface, A6 cladding is adhered to the lead surface, so the lead body such as 4270I will not be oxidized during sealing, and the lead surface will be dense and strong. It has been found that plating can be automated without the need to remove the oxide film. After glass sealing, the outer lead part 2IK and the remaining A and 6 Clathods must be completely removed before plating the finished product, but the inventor has found that they can be easily removed by using a sulfuric acid-based etchant. The above objective has been achieved.
本発明のリードフレームは第２図のリードフレームと同
一形状のリードフレームの全表面にアルミニウム又はア
ルミニウム系合金被膜を形成したものである。この被膜
の形成はクラッドによるのがよいが、蒸着、イオンブレ
ーティングなどの手段を用い又もよ〜・０
アルミニウム系合金の例どしては、Ａ、、ｅ−８ｔ。The lead frame of the present invention has the same shape as the lead frame shown in FIG. 2, and has an aluminum or aluminum alloy coating formed on the entire surface of the lead frame. It is preferable to form this film using a cladding, but it is also possible to use means such as vapor deposition or ion blating. Examples of aluminum alloys include A, e-8t.
Ａぷ−Ｎ ｉ 、 Ａ １３−Ｍ ｎなどのＡ１を主成
分とした合金が挙げられる。被膜の形成は片面（表面ま
たは裏面）でも両面（表裏面）であっＣもよ（・。Examples include alloys containing A1 as a main component, such as Ap-N i and A 13-M n. The film can be formed on one side (front or back) or both sides (front and back).
このリードフレームを用℃・、ガラス封止後、８？￥１
図に示１−ようなサーディンプ型半導体装置を得るには
、そのメッキ処理前にアウターリード部の上記した被膜
を除去する必要がある。この被膜の除去には、硫酸を使
用してもよく１例えば、封止後のザーディップ型半導体
装置を１０％硫酸中に７０Ｃ１５分浸漬処理してもよい
が、硫酸ではＡＪ１３の溶解性がやや劣る。Use this lead frame at 8℃ after glass sealing. ¥1
In order to obtain a sardine type semiconductor device such as 1- shown in the figure, it is necessary to remove the above-mentioned coating on the outer lead portion before the plating process. To remove this film, sulfuric acid may be used.1For example, the sealed Zardip-type semiconductor device may be immersed in 10% sulfuric acid at 70C for 15 minutes, but the solubility of AJ13 is slightly lower in sulfuric acid. Inferior.
本発明者は鋭意検討の結果、硫酸中に１％（体積）以下
の塩素イオンを含む塩素化合物例えばＨＣＡを添加して
成る処理液で処理することにより、かかる被膜を容易に
除去できることを発見した。また、硫酸とアミノ酸系有
機物例えばゼラチンとから成る処理液を使用するか、あ
る（・は硫酸とＨＣ，ｅとアミノ酸系有機物とから成る
処理液を使用してもよい。As a result of extensive studies, the inventors of the present invention have discovered that such coatings can be easily removed by treatment with a treatment solution made by adding a chlorine compound, such as HCA, containing 1% (volume) or less of chlorine ions to sulfuric acid. . Further, a processing liquid consisting of sulfuric acid and an amino acid-based organic substance such as gelatin may be used, or a processing liquid consisting of sulfuric acid, HC, e, and an amino acid-based organic substance may be used.
本発明では他の処理液や他の処理手段を使用してかかる
被膜を除去してもよいが、特にこれら処理液を使用する
ことによりアルミニウムまたはアルミニウム系合金被膜
の除去に成功した。In the present invention, such coatings may be removed by using other processing liquids or other processing means, but we have succeeded in removing aluminum or aluminum-based alloy coatings by using these processing liquids in particular.
ところで、この種のパッケージの封着に使用される低融
点ガラスは主成分が酸化鉛（Ｐｂ０）であるため、耐薬
品性が非常に弱く１通常のアルミニウムをエンチング除
去する薬品では侵されてしまうが、上記した処理液はガ
ラス表面に影響を与えずに、容易に上記被膜を除去でき
ることが判った。By the way, the low melting point glass used for sealing this type of package has lead oxide (Pb0) as its main component, so it has very weak chemical resistance (1) and is attacked by ordinary chemicals that etch and remove aluminum. However, it has been found that the above-mentioned treatment liquid can easily remove the above-mentioned film without affecting the glass surface.
尚前記した硫酸による浸漬処理では、処理時間の経過と
とも罠、少しずつ溶は出したガラス中の鉛が液中に蓄積
され、０．００５Ｍ／、／？！程度でもガラス上に金属
鉛とし℃再析出してしまいガラスの絶縁性を劣化させる
。このため、製品を処理するにあたり、鉛が析出しない
程度の貴方向の電位を与えておけばよいことがわかった
。In addition, in the sulfuric acid immersion treatment described above, as the treatment time progresses, the lead in the glass that is gradually dissolved accumulates in the solution, and 0.005M/, /? ! Even if the temperature is low, it will redeposit as metallic lead on the glass and deteriorate the insulation properties of the glass. For this reason, it has been found that when processing the product, it is sufficient to apply a potential in the noble direction to the extent that lead does not precipitate.
次に本発明によるかかる被膜の除去についての実施例を
示す。Next, an example of removing such a film according to the present invention will be shown.
〔例１〕
鉄−ニッケル系合金（例えば４２Ａ１１ｏｙ）よりなる
リードフレームの全表面に厚さ１０μｍのＡ−１１？ク
ラツドを有し、融点５００ｃの低融点ガラスにて封止さ
れたＤＩＰタイプの第１図に示すような構造のガラス封
止型半導体年債回路装置を組立封止後、そのリードに錫
メッキを施す前に、当該装置について次のようなエツチ
ング液を用い、下記条件下でＡ１クラッドの除去を行っ
た。[Example 1] A-11? with a thickness of 10 μm is coated on the entire surface of a lead frame made of an iron-nickel alloy (for example, 42A11oy). After assembling and sealing a DIP-type glass-sealed semiconductor annual bond circuit device with a structure shown in Figure 1, which has a cladding and is sealed with low-melting glass with a melting point of 500c, the leads are tin-plated. Prior to this, the A1 cladding was removed using the following etching solution for the device under the following conditions.
（＋１ エツチング液組成 Ｈ，ＳＯ，：水＝５ ： ９５ ゼラチン ４０ｇ／看 （１１） エツチング液温度 ５ｒ （Ｉｌｌ） エツチング処理待間 約５．８分 その結果、ガラス表面に異常を生じることなく。(+1 Etching liquid composition H, SO,: Water = 5: 95 Gelatin 40g/kg (11) Etching liquid temperature 5r (Ill) Etching processing waiting time Approximately 5.8 minutes As a result, no abnormalities occur on the glass surface.
ＡＡクラ２ドが溶けて除去された。AA clad 2 was dissolved and removed.
〔例２〕 １０％Ｈ，Ｓ０４に０．１％（３５％試薬として。[Example 2] 10% H, 0.1% in S04 (as 35% reagent.
Ｖ ｏ Ａ％）Ｈ（ｌを添加してなる処理液を用いた他
は実施例１と同様にしてＡＡクラッドの除去な行った。The AA cladding was removed in the same manner as in Example 1, except that a treatment solution containing V o A %) H (l) was used.
実施例１と同様の結果を得た。The same results as in Example 1 were obtained.
（１）片面または両面の全表面にアルミクラッドが施さ
れているので、フレームの打抜加工がきわめて容易であ
り、従来の部分クラッドのとと（高粘度に部分クラッド
し、精度よく打抜き加工をする必要はなく、コストを著
しく低減できる。(1) Since the entire surface of one or both sides is coated with aluminum cladding, punching of the frame is extremely easy. There is no need to do so, and costs can be significantly reduced.
（２） リード表面はアルミクラッドで被覆されている
ので、ガラス封着工程で酸化が防止され、従来のごとく
酸化皮膜を形成し、メッキ自動化を妨げることはな〜・
。したがってメッキ作業の自動化が容易である。(2) Since the lead surface is coated with aluminum cladding, oxidation is prevented during the glass sealing process, and unlike in the past, an oxide film is formed and does not interfere with plating automation.
. Therefore, automation of plating work is easy.
（３）アルミクラッドはガラスとの封着性が強いので、
封着強度の大なるガラス封止型半導体装置が得られる。(3) Aluminum cladding has strong sealing properties with glass, so
A glass-sealed semiconductor device with high sealing strength can be obtained.
したがって耐湿性の高信頼度の半導体装置が得られる。Therefore, a moisture-resistant and highly reliable semiconductor device can be obtained.
（４） 外部リードについて半田接続の障害となるアル
ミクラッドは、本発明の硫酸系のエッチ液により容易に
除去できる。封止後メッキ処理前にアルミクラッドを除
去することにより密着性の高いメッキ膜を形成すること
もできる。(4) Regarding the external leads, the aluminum cladding, which is an obstacle to solder connections, can be easily removed using the sulfuric acid-based etchant of the present invention. A plated film with high adhesion can also be formed by removing the aluminum cladding after sealing and before plating.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で鍾々変更可
能であることはいうまでもな−・。Although the invention made by the present inventor has been specifically explained above based on Examples, it is to be noted that the present invention is not limited to the above-mentioned Examples and can be modified in many ways without departing from the gist thereof. Even...
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体装置、特にガ
ラス封止型半導体装置について適用した場合について説
明したが、リードフレームに半導体素子を搭載し、ワイ
ヤボンディングし、樹脂封止する樹脂封止型半導体装置
について適用することもできる。In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background thereof, which is a semiconductor device, particularly a glass-sealed semiconductor device. It can also be applied to resin-sealed semiconductor devices that are wire-bonded and resin-sealed.
また、ガラス封止型ダイオードのごとく、ガラス管内に
ダイオード素子を内蔵させ、リードをガラス管の一部で
封止して成るようなものにも適用することができ、その
他各種の電子部品に応用可能である。It can also be applied to devices such as glass-sealed diodes, where the diode element is built into a glass tube and the leads are sealed with a portion of the glass tube, and it can also be applied to various other electronic components. It is possible.
第１図はガラス封止型半導体装置の一部切欠斜視図、
第２図はリードフレームの従来例を示す平面図である。
１・・・インナーリード、２・・・アクタ−リード、３
゜４・・・フレーム連結部、５・・・封止箇所、６・・
・キャップ（セラミック）、７・・・封止材（ガラス）
、８・・・ベース（セラミック）％９・・・コネクタワ
イヤ。FIG. 1 is a partially cutaway perspective view of a glass-sealed semiconductor device, and FIG. 2 is a plan view showing a conventional example of a lead frame. 1... Inner lead, 2... Actor lead, 3
゜4...Frame connection part, 5...Sealing part, 6...
・Cap (ceramic), 7... Sealing material (glass)
, 8... Base (ceramic) %9... Connector wire.
Claims (1)
ウム系合金よりなる被膜を形成し℃成るガラスまたは樹
脂封止型電子部品用リードフレーム。 ２、被膜がクラッドにより形成されてなる。特許請求の
範囲第１項記載のリードフレーム。 ３、片面または両面の全表面にアルミニウムまたはアル
ミニウム系合金よりなる被膜を形成して成るリードフレ
ームを用い、封止後に当該リードフレームの外部リード
に形成された被膜をメッキ処理前に除去して成ることを
特徴とするガラス又は樹脂封止型電子部品。 ４、被膜の除去を硫酸と１％（体積）以下の塩素イオン
を含む塩素化合物とから成る処理液で行う。 特許請求の範囲第３項記載の電子部品。 ５、被膜の除去を硫酸とアミノ酸系有機物とから成る処
理液で行う、特許請求の範囲第３項記載の電子部品。 ６、被膜の除去を硫酸とＨ（ｌとアミノ酸系有様物とか
ら成る処理液で行う、特許請求の範囲第３項記載の電子
部品。[Scope of Claims] 1. A glass or resin-sealed lead frame for electronic components, which has a coating made of aluminum or an aluminum-based alloy formed on the entire surface of one or both sides. 2. The film is formed of a cladding. A lead frame according to claim 1. 3. Using a lead frame with a coating made of aluminum or aluminum alloy formed on the entire surface of one or both sides, the coating formed on the external leads of the lead frame is removed after sealing before plating. A glass or resin sealed electronic component characterized by: 4. The film is removed using a treatment solution consisting of sulfuric acid and a chlorine compound containing 1% (by volume) or less of chlorine ions. An electronic component according to claim 3. 5. The electronic component according to claim 3, wherein the film is removed using a treatment liquid consisting of sulfuric acid and an amino acid-based organic substance. 6. The electronic component according to claim 3, wherein the film is removed using a treatment liquid consisting of sulfuric acid, H(l), and an amino acid-based substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14386483A JPS6035548A (en) | 1983-08-08 | 1983-08-08 | Lead frame and electronic parts using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14386483A JPS6035548A (en) | 1983-08-08 | 1983-08-08 | Lead frame and electronic parts using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6035548A true JPS6035548A (en) | 1985-02-23 |
Family
ID=15348756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14386483A Pending JPS6035548A (en) | 1983-08-08 | 1983-08-08 | Lead frame and electronic parts using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6035548A (en) |
-
1983
- 1983-08-08 JP JP14386483A patent/JPS6035548A/en active Pending
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