JPS6050343B2 - Lead frame for semiconductor device manufacturing - Google Patents
Lead frame for semiconductor device manufacturingInfo
- Publication number
- JPS6050343B2 JPS6050343B2 JP2633580A JP2633580A JPS6050343B2 JP S6050343 B2 JPS6050343 B2 JP S6050343B2 JP 2633580 A JP2633580 A JP 2633580A JP 2633580 A JP2633580 A JP 2633580A JP S6050343 B2 JPS6050343 B2 JP S6050343B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- lead frame
- semiconductor device
- internal
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置製造用リードフレームに関し、特に
樹脂封止型半導体装置用リードフレームの構成に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a lead frame for manufacturing semiconductor devices, and particularly to the structure of a lead frame for resin-sealed semiconductor devices.
樹脂封止型の半導体装置のリードフレームは主として鉄
−ニッケル系合金および銅系合金から構成される。Lead frames of resin-sealed semiconductor devices are mainly composed of iron-nickel alloys and copper alloys.
これらの素材により構成されたリードフレームは半導体
素子を搭載する必要上、種々の表面処理を行なう必要が
あり従来はリードフレームの全表面に数〔μｍ〕の金（
Ａｕ）または銀（Ａｇ）めつきを施すことが行なわれて
きた。しかし全面銀めつきのリードフレームでは半導体
装置組立時、特に半導体素子接合時に大気中で加熱する
ため銀皮膜とリードフレーム素材との間に素材の酸化皮
膜を生成し、このため特に外部リード部のはんだ付け性
を著しく低下させることが多かつた。そのためおよび銀
のマイグレーションの問題をさけるために、通常組立封
止完了後樹脂封止部より露出している外部リード上の銀
皮膜を剥離し、スズ、鉛等のはんだ付け性の良いめつき
を行なう方法が行なわれていた。In order to mount semiconductor elements on lead frames made of these materials, it is necessary to perform various surface treatments.
Au) or silver (Ag) plating has been practiced. However, lead frames with full silver plating are heated in the atmosphere when assembling semiconductor devices, especially when bonding semiconductor elements, so an oxide film of the material is formed between the silver film and the lead frame material. In many cases, the adhesion properties were significantly reduced. For this reason and to avoid the problem of silver migration, the silver film on the external leads exposed from the resin sealing part is usually peeled off after assembly and sealing is completed, and a plated with tin, lead, etc. with good solderability is applied. There was a way to do it.
一方、コストダウンの要請から、半導体素子を搭載固着
するステージ部および半導体素子の電極と電気的接続を
する接続細線（リード線）が接続される内部リード部に
のみ金または銀の部分めつきが行なわれるようになつた
。On the other hand, in order to reduce costs, gold or silver is selectively plated only on the stage part on which the semiconductor element is mounted and fixed, and on the internal lead part to which thin connecting wires (lead wires) that electrically connect with the electrodes of the semiconductor element are connected. It began to be practiced.
しかしながら外部リード部にめつきを施さない部分めつ
きの場合には、半導体素子固着時の熱により該外部リー
ド部表面に生成した酸化皮膜の除去が必要であり、さら
に封止樹脂のバリが非常に多く出ることからバリ取りも
必要である。また、半導体装置の組立後にこのような表
面処理をウェットプロセスで行なうことは組立工程以ノ
前に一括して必要な表面処理工程を行なつておく方法に
比べて工程およびコスト面で無駄が多い。However, in the case of partial plating where the external lead part is not plated, it is necessary to remove the oxide film formed on the surface of the external lead part due to the heat generated when the semiconductor element is fixed, and furthermore, the burrs of the sealing resin are extremely large. Deburring is also necessary since a lot of it comes out. Furthermore, performing such surface treatment using a wet process after assembling the semiconductor device is wasteful in terms of process and cost compared to a method in which the necessary surface treatment processes are performed all at once before the assembly process. .
本発明はこのような従来のリードフレームの構成に代え
て、より安価に構成されるリードフレームを提供しよう
とするものてある。５ このため本発明によれば、半導
体素子が固着されるステージ部、該半導体素子の電極か
ら導出されるリード線が接続される内部リード部、該内
部リード部から延長された外部接続リード部とを有する
半導体装置製造用リードフレームにおいて、前記ステー
ジ部及び内部リード部を構成する金属基体表面には銅、
銅合金あるいはナルミニウムのいずれかが被覆され、前
記外部接続リード部を構成する金属基体表面には半田付
け性の良好な被覆が施されてなることを特徴とする半導
体装置製造用リードフレームが提供される。The present invention aims to provide a lead frame constructed at a lower cost in place of the conventional lead frame construction. 5. Therefore, according to the present invention, the stage part to which the semiconductor element is fixed, the internal lead part to which the lead wire led out from the electrode of the semiconductor element is connected, and the external connection lead part extended from the internal lead part. In the lead frame for semiconductor device manufacturing having
There is provided a lead frame for semiconductor device manufacturing, characterized in that the metal base is coated with either copper alloy or naluminium, and the surface of the metal base constituting the external connection lead portion is coated with a coating having good solderability. Ru.
次に本発明を実施例をもつて詳細に説明する。Next, the present invention will be explained in detail using examples.
第１図は本発明による半導体装置製造用リードフレーム
を示す。第２図は第１図のａ−ａ″断面を示す。本実施
例にあつては、当該リードフレーム素材（基体）として
、鉄一ニッケル合金（４２％Ｎｉ−Ｆｅ合金）が使用さ
れる。FIG. 1 shows a lead frame for manufacturing semiconductor devices according to the present invention. FIG. 2 shows a cross section taken along line a-a'' in FIG. 1. In this embodiment, an iron-nickel alloy (42% Ni-Fe alloy) is used as the lead frame material (substrate).
図において１は半導体集積回路素子が搭載、固着される
ステージ、２は該ステージ１の周囲に配設され外部接続
リード部へ延在された内部リード、３は内部接続リード
２から延長された外部接続リードである。また４は封止
用樹脂の流れ止め用タイバー、５はリードフレーム外枠
である。本発明によれば、図において破線枠によつて囲
んだ樹脂封止部１のやや内側の内部リード部及び外部接
続リード部表面に半田付けの容易な金属例，えは錫（Ｓ
ｎ）６が厚さ４〔μｍ〕程に被覆される。In the figure, 1 is a stage on which a semiconductor integrated circuit element is mounted and fixed, 2 is an internal lead arranged around the stage 1 and extends to an external connection lead, and 3 is an external lead extended from the internal connection lead 2. It is a connection lead. Further, 4 is a tie bar for preventing the sealing resin from flowing, and 5 is an outer frame of the lead frame. According to the present invention, the surfaces of the internal lead portion and external connection lead portion slightly inside the resin sealing portion 1 surrounded by a broken line frame in the figure are made of a metal that is easy to solder, such as tin (S).
n) 6 is coated to a thickness of about 4 [μm].
また一点鎖線枠によつて囲んだステージ部及びステージ
近傍の内部リード部■には例えば銅（Ｃｕ）７が厚さ２
〔μｍ〕程に被覆される。内部リードの他の部分は基体
が表出されたものとされこる。これら各被覆は周知のめ
つき法により行うことができる。このような本発明によ
るリードフレームは、その素材として前述の如く鉄−ニ
ッケル合金を用い、またその表面へ選択的に被覆される
金属層も３錫等の半田付け性の良好な金属及び銅のみて
ある。In addition, for example, copper (Cu) 7 is applied to the stage part surrounded by the dashed line frame and the internal lead part (■) near the stage to a thickness of 2.
It is coated to about [μm]. The other portions of the internal leads are considered to have exposed substrates. Each of these coatings can be performed by a well-known plating method. The lead frame according to the present invention uses an iron-nickel alloy as its material as described above, and the metal layer selectively coated on its surface is made of a metal with good solderability such as tritin and copper. I've seen it.
したがつて、前記従来の如く貴金属の被覆処理がなされ
るリードフレームに比較して、価格を大幅に低下させる
ことができる。本発明によるリードフレームへの半導体
素子の４，搭載固着は、２００〔℃〕以下の低温で熱硬
化可能な樹脂例えば米国デュポン社製エポキシ樹脂５５
０４等を接着剤として、該半導体素子をステージ１上に
接着することにより行なうことができる。Therefore, the price can be significantly reduced compared to the conventional lead frame coated with precious metal. 4. The semiconductor element is mounted and fixed on the lead frame according to the present invention using a resin that can be thermoset at a low temperature of 200 [°C] or less, such as epoxy resin 55 manufactured by DuPont in the United States.
This can be done by bonding the semiconductor element onto the stage 1 using adhesive such as 04.
また、該半導体素子の電極と内部リードとの接続は、金
線あるいはアルミニウム線等のリード線を超音波振動併
用の熱圧着によつて接続することにより行なうことがで
きる。かかる超音波振動併用の熱圧着法は２００〔℃〕
以下の低温でリード線接続作業を行うことができる。ノ
したがつて、本発明によるリードフレームにあつては
、前記錫被覆層６の融解、変色等を招かす良好な半田付
け性が維持される。Further, the electrodes of the semiconductor element and the internal leads can be connected by connecting lead wires such as gold wires or aluminum wires by thermocompression bonding combined with ultrasonic vibration. This thermocompression bonding method combined with ultrasonic vibration is performed at 200 [℃]
Lead wire connection work can be performed at low temperatures below. Therefore, in the lead frame according to the present invention, good solderability, which would otherwise cause melting, discoloration, etc. of the tin coating layer 6, is maintained.
また本発明によるリードフレームにおいては、樹脂封止
部１内まで錫被覆層６が存在するために該錫が軟質であ
ることから封止樹脂との密着が良好で、両者のバッキン
グ効果が良好であり、樹脂封止の際発生する樹脂バリを
極めて少量にすることができる。In addition, in the lead frame according to the present invention, since the tin coating layer 6 exists up to the inside of the resin sealing part 1, the tin is soft, so it has good adhesion with the sealing resin, and the backing effect of both is good. This makes it possible to minimize resin burrs generated during resin sealing.
よつて本発明によるリードフレームにおいては、半導体
装置の組立て後に、リードフレーム表面の酸化皮膜の除
去、封止樹脂のバリ取り等のウェットプロセス等を必要
としない。Therefore, the lead frame according to the present invention does not require wet processes such as removing an oxide film on the surface of the lead frame and deburring the sealing resin after assembling the semiconductor device.
なお、本発明によるリードフレームにおいては半田付け
性の良好な金属６として、前記錫に代えて、鉛又は半田
を使用してもよい。In the lead frame according to the present invention, lead or solder may be used as the metal 6 having good solderability in place of the tin.
また、ステージ部及び該ステージ部近傍の内部リード部
の金属被覆７は銅被覆に代えて、銅合金被覆又はアルミ
ニウム被覆を施してもよい。Further, the metal coating 7 of the stage part and the internal lead part near the stage part may be coated with a copper alloy or with aluminum instead of the copper coating.
更にかかる金属被覆７は、内部リードのうち前記半田付
け性の良好な金属６に被覆されていない部分全体に施し
てもよい。また、かかる金属被覆７を金属基体の表面全
体に施し、半田付け性の良好な金属６を該金属被覆７上
の所望の領域に被覆してもよい。Further, the metal coating 7 may be applied to the entire portion of the internal lead that is not covered with the metal 6 having good solderability. Alternatively, the metal coating 7 may be applied to the entire surface of the metal base, and a desired area on the metal coating 7 may be coated with the metal 6 having good solderability.
第１図は本発明によるリードフレームの構成を示す平面
図、第２図は第１図のａ−ａ″断面である。
図において、１・・・・・・ステージ、２・・・・・・
内部リード、３・・・・・・外部接続リード、４・・・
・・・タイバー、５・・・リードフレーム外枠。Fig. 1 is a plan view showing the structure of a lead frame according to the present invention, and Fig. 2 is a cross section taken along the line a-a'' in Fig. 1. In the figure, 1...stage, 2...・
Internal lead, 3... External connection lead, 4...
... Tie bar, 5... Lead frame outer frame.
Claims (1)
の電極から導出されるリード線が接続される内部リード
部、該内部リード部から延長された外部接続リード部と
を有する半導体装置製造用リードフレームにおいて、前
記ステージ部及び内部リード部を構成する金属基体表面
には銅、銅合金あるいはアルミニウムのいずれかが被覆
され、前記外部接続リード部を構成する金属基体表面に
は半田付け性の良好な被覆が施されてなることを特徴と
する半導体装置製造用リードフレーム。1. A lead frame for manufacturing a semiconductor device, which has a stage part to which a semiconductor element is fixed, an internal lead part to which lead wires derived from the electrodes of the semiconductor element are connected, and an external connection lead part extended from the internal lead part. The surface of the metal base constituting the stage part and the internal lead part is coated with copper, copper alloy, or aluminum, and the surface of the metal base constituting the external connection lead part is coated with a coating having good solderability. A lead frame for semiconductor device manufacturing, characterized in that it is provided with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2633580A JPS6050343B2 (en) | 1980-03-03 | 1980-03-03 | Lead frame for semiconductor device manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2633580A JPS6050343B2 (en) | 1980-03-03 | 1980-03-03 | Lead frame for semiconductor device manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56122156A JPS56122156A (en) | 1981-09-25 |
| JPS6050343B2 true JPS6050343B2 (en) | 1985-11-08 |
Family
ID=12190557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2633580A Expired JPS6050343B2 (en) | 1980-03-03 | 1980-03-03 | Lead frame for semiconductor device manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050343B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611919A (en) * | 1984-06-13 | 1986-01-07 | Matsushita Electric Ind Co Ltd | Control device of combustion tool |
| JPS6293557U (en) * | 1985-11-29 | 1987-06-15 | ||
| JPH01100000A (en) * | 1987-10-02 | 1989-04-18 | Yazaki Corp | Residual-quantity alarm system of kerosene |
| JPH0199999A (en) * | 1987-10-02 | 1989-04-18 | Yazaki Corp | Kerosene tank with alarm |
| JPH01312325A (en) * | 1988-06-10 | 1989-12-18 | Sanyo Electric Co Ltd | Control device for combustion device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139952A (en) * | 1981-02-25 | 1982-08-30 | Toshiba Corp | Resin sealing type semiconductor device |
| JPS58140645U (en) * | 1982-03-16 | 1983-09-21 | 日立電線株式会社 | IC lead frame |
| JPS59108335A (en) * | 1982-12-14 | 1984-06-22 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS6030118A (en) * | 1983-07-28 | 1985-02-15 | 日本ケミコン株式会社 | Leadframe for electronic part |
| JPS63197364A (en) * | 1987-02-12 | 1988-08-16 | Goto Seisakusho:Kk | Manufacture of semiconductor device |
| JPS63197363A (en) * | 1987-02-12 | 1988-08-16 | Goto Seisakusho:Kk | Manufacture of semiconductor device |
| JPS6442845A (en) * | 1987-08-10 | 1989-02-15 | Rohm Co Ltd | Electronic component and manufacture thereof |
-
1980
- 1980-03-03 JP JP2633580A patent/JPS6050343B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611919A (en) * | 1984-06-13 | 1986-01-07 | Matsushita Electric Ind Co Ltd | Control device of combustion tool |
| JPS6293557U (en) * | 1985-11-29 | 1987-06-15 | ||
| JPH01100000A (en) * | 1987-10-02 | 1989-04-18 | Yazaki Corp | Residual-quantity alarm system of kerosene |
| JPH0199999A (en) * | 1987-10-02 | 1989-04-18 | Yazaki Corp | Kerosene tank with alarm |
| JPH01312325A (en) * | 1988-06-10 | 1989-12-18 | Sanyo Electric Co Ltd | Control device for combustion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56122156A (en) | 1981-09-25 |
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