CN220604682U - Lead frame and chip package product - Google Patents
Lead frame and chip package product Download PDFInfo
- Publication number
- CN220604682U CN220604682U CN202322000267.8U CN202322000267U CN220604682U CN 220604682 U CN220604682 U CN 220604682U CN 202322000267 U CN202322000267 U CN 202322000267U CN 220604682 U CN220604682 U CN 220604682U
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- Prior art keywords
- lead frame
- ions
- oxide layer
- ion
- enhanced binding
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- 150000002500 ions Chemical class 0.000 claims abstract description 148
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 150000003839 salts Chemical class 0.000 claims abstract description 55
- 238000004806 packaging method and process Methods 0.000 claims abstract description 46
- 239000002253 acid Substances 0.000 claims abstract description 45
- 230000000737 periodic effect Effects 0.000 claims abstract description 42
- 239000005022 packaging material Substances 0.000 claims abstract description 25
- 150000005837 radical ions Chemical class 0.000 claims abstract description 23
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 21
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 13
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims description 48
- 229920000647 polyepoxide Polymers 0.000 claims description 48
- -1 arsenate ions Chemical class 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 239000005751 Copper oxide Substances 0.000 claims description 10
- 229910000431 copper oxide Inorganic materials 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229940000489 arsenate Drugs 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052706 scandium Inorganic materials 0.000 claims description 6
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052713 technetium Inorganic materials 0.000 claims description 6
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 40
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
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- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 5
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 4
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 4
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- 239000008367 deionised water Substances 0.000 description 4
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- 150000003242 quaternary ammonium salts Chemical class 0.000 description 4
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- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
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- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
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- 150000003863 ammonium salts Chemical class 0.000 description 2
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- HDFRDWFLWVCOGP-UHFFFAOYSA-N carbonothioic O,S-acid Chemical compound OC(S)=O HDFRDWFLWVCOGP-UHFFFAOYSA-N 0.000 description 2
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- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
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- 150000003573 thiols Chemical class 0.000 description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 2
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Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Embodiments of the present disclosure provide a lead frame and a chip package product, a portion of a surface of the lead frame being formed with an oxide layer, the oxide layer including a metal salt, the metal salt including enhanced binding ions, the enhanced binding ions including: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements. The lead frame adopting the embodiment of the disclosure has good bonding strength with the packaging material, can be applied to chip packaging, is not easy to generate layering after packaging, and has high packaging reliability.
Description
Technical Field
The present disclosure relates to the field of chip packaging, and in particular, to a lead frame and a chip packaging product.
Background
In the field of chip packaging, a lead frame is generally used as a carrier for mounting a chip, and the chip is connected with pins of the lead frame through bonding wire welding, so that electrodes of the chip are connected out; and meanwhile, the chip and the bonding wires are required to be sealed by using a plastic packaging material so as to protect the chip and the bonding wires from the interference and influence of external environment.
The encapsulation material is used to encapsulate the chip, the bond wires, and most of the lead frame, and therefore, the bond strength of the encapsulation material to the lead frame will affect the encapsulation strength and stability. In order to enhance the welding firmness between the bonding wire and the lead frame, silver is electroplated on the lead frame, and then the bonding wire is welded on the silver. Since the binding force of the encapsulation material and the copper alloy is greater than the binding force of the encapsulation material and the silver, the formation of electroplated silver reduces the area of the copper alloy bound with the encapsulation material, resulting in a reduction in encapsulation strength. In actual packaging, delamination of the packaging material from the lead frame is likely to occur.
To enhance the package strength, the non-silver plated areas of the leadframe surface are typically treated, one of which is an oxidation treatment, which enhances the bonding force of the oxidized leadframe surface to the package material. However, over time, delamination of the encapsulation material from the leadframe may occur, resulting in package failure; delamination is more likely to occur especially when the silver plating area is large.
Thus, a new leadframe is needed.
Disclosure of Invention
To address the problem of delamination of the package material from the leadframe in chip packages, embodiments of the present disclosure provide a leadframe. An oxide layer is formed on a part of the surface of the lead frame, the oxide layer comprises metal salt, the metal salt comprises enhanced binding ions, and the enhanced binding ions comprise: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements.
In some embodiments, the metal element in the divalent or more metal ion includes: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium.
In some embodiments, the acid ion comprising a group V element of period 3 to period 5 of the periodic table of elements comprises: phosphate ions, arsenate ions or antimonate ions.
In some embodiments, the acid ion comprising a group IV element of the 3 rd to 6 th periods of the periodic table of elements comprises: silicate ions.
In some embodiments, the ratio of the actual area of the surface of the oxide layer to the area of the oxide layer on the surface of the leadframe is 1-5.
In some embodiments, the oxide layer has a thickness of
In some embodiments, the material of the lead frame is copper or copper alloy, and the oxide layer includes copper oxide.
In some embodiments, the surface of the leadframe is also formed with a conductive layer.
In some embodiments, the conductive layer comprises silver.
Embodiments of the present disclosure also provide a chip package product including: any of the above lead frames, adapted to carry a chip; and the packaging material is suitable for packaging the lead frame and the chip, and comprises epoxy resin.
Compared with the prior art, the technical scheme of the embodiment of the disclosure has the following beneficial effects:
the lead frame of the embodiment of the disclosure, the part of the surface of the lead frame is formed with an oxide layer, the oxide layer comprises a metal salt, the metal salt comprises reinforcing binding ions, and the reinforcing binding ions comprise: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements. By adopting the lead frame, the oxide layer and the packaging material have good binding force, are not easy to delaminate after packaging, and have high packaging reliability.
The chip packaging product of the embodiment of the disclosure is characterized in that the surface of the lead frame carrying the chip is provided with the oxide layer, the oxide layer comprises metal salt, the metal salt comprises enhanced bonding ions, and the enhanced bonding ions enable good bonding force between the lead frame and packaging materials to be achieved, so that the chip packaging product is good in packaging performance, high in packaging reliability, and not prone to layering and the like.
Drawings
Other features and advantages of the present disclosure will be better understood from the following detailed description of alternative embodiments taken in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts, and in which:
fig. 1 shows a schematic surface structure of a lead frame according to an embodiment of the present disclosure;
FIG. 2 shows a schematic diagram of a structure of a chip-package product according to an embodiment of the disclosure;
fig. 3 shows a flow diagram of a method of processing a lead frame according to a first embodiment of the present disclosure;
fig. 4 shows a flow diagram of a method of processing a leadframe according to a second embodiment of the present disclosure;
fig. 5 shows a flow diagram of a method of processing a lead frame according to a third embodiment of the present disclosure;
fig. 6 shows a flow diagram of a method of processing a lead frame according to a fourth embodiment of the present disclosure;
Fig. 7 shows a flow diagram of a method of processing a lead frame according to a fifth embodiment of the present disclosure;
fig. 8 shows a flow diagram of a method of processing a lead frame according to a sixth embodiment of the present disclosure;
fig. 9 shows a flowchart of a processing method of a lead frame according to a seventh embodiment of the present disclosure.
Detailed Description
Embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings, are described in detail below. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below by referring to the drawings are exemplary only for explaining the present disclosure and are not to be construed as limiting the present disclosure.
In order to solve the problem that the bonding strength of the lead frame and the packaging material is not enough to easily cause delamination and the like in the chip packaging process, embodiments of the present disclosure provide a lead frame, a part of the surface of which is formed with an oxide layer, the oxide layer includes a metal salt, the metal salt includes an enhanced bonding ion, and the enhanced bonding ion includes: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements.
Fig. 1 shows a schematic surface structure of a lead frame according to an embodiment of the present disclosure. Referring to fig. 1, an oxide layer 2 is formed on a part of the surface of a lead frame 1, the oxide layer 2 including a metal salt 3, the metal salt 3 including enhanced binding ions, i.e., the enhanced binding ions being present in the metal salt 3 as metal cations or anions of the metal salt. The enhanced binding ion comprises: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements.
In some embodiments, the metal salt 3 is in a solid state.
In some embodiments, the enhanced binding ion is a metal ion of greater than two valences, present in the metal salt of greater than two valences. In some embodiments, the enhanced binding ion is an acid ion comprising a group V element of the 3 rd to 5 th periods of the periodic table of elements, or an acid ion comprising a group IV element of the 3 rd to 6 th periods of the periodic table of elements, the acid ion being present as an anion in the metal salt.
In some embodiments, the metal element in the divalent or more metal ion includes: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium.
In some embodiments, the acid ion comprising a group V element of the 3 rd to 5 th periods of the periodic table comprises: phosphate ions, arsenate ions or antimonate ions.
In some embodiments, the acid ion comprising a group IV element of the 3 rd to 6 th periods of the periodic table comprises: silicate ions.
For different embodiments, the metal salt 3 may be a metal salt comprising one enhanced binding ion, or may be a mixture of metal salts comprising different enhanced binding ions. In some embodiments, the metal salt 3 comprises Al (NO 3 ) 3 、ZnSO 4 、FeSO 4 、Fe 2 (SO 4 ) 3 、MgSO 4 、Mg(NO 3 ) 2 、CaCl 2 、Ca(NO 3 ) 2 、Ca(HCO 3 ) 2 、Na 2 MoO 4 、SnSO 4 Or Na (or) 2 SiO 3 One or more mixtures thereof.
In the lead frame of the embodiment of the disclosure, the oxide layer 2 formed on a part of the surface of the lead frame 1 has a rugged surface, the oxide layer 2 is concave inward and convex upward, compared with a plane, the oxide layer 2 has a larger surface area, and the existence of the oxide layer 2 causes the surface of the lead frame 1 to have a certain roughness. In order to make the lead frame 1 have good bonding force with the packaging material, it is necessary to ensure that the oxide layer 2 has a certain degree of roughness, and in some embodiments, the ratio (S ratio) of the actual area of the surface of the oxide layer 2 to the area occupied by the oxide layer 2 on the surface of the lead frame 1 is 1-5, where the actual area of the surface of the oxide layer 2 refers to the actual area of the concave-convex surface of the oxide layer 2, and the area occupied by the oxide layer 2 on the surface of the lead frame 1 refers to the projected area of the oxide layer 2 onto the surface of the lead frame 1.
In the lead frame of the embodiment of the disclosure, the thickness of the oxide layer 2 is controlled within a certain range to ensure that the lead frame 1 has good bonding force with the packaging material. In some embodiments, the oxide layer 2 has a thickness ofIn some embodiments, the oxide layer 2 has a thickness of +>
In some embodiments, the material of the lead frame 1 is copper or copper alloy, and the oxide layer 2 includes copper oxide, that is, the oxide layer 2 includes: comprising a metal salt 3 that enhances binding ions with an oxide of copper, including copper oxide or cuprous oxide.
In some embodiments, a conductive layer is further formed on the surface of the lead frame, and the conductive layer is a bonding pad layer, so as to improve bonding performance of the bonding wire, so that electrical connection between the bonding wire and the lead frame and between the bonding wire and the chip in the chip package are facilitated. In some embodiments, the conductive layer is a silver layer.
The lead frame of the embodiment of the disclosure can be used for chip packaging to improve packaging reliability. In some embodiments, the chip and the lead frame 1 are encapsulated by an encapsulating material, wherein the encapsulating material is epoxy resin, the epoxy resin comprises oxygen atoms in the form of ether bonds or hydroxyl groups, and the bonding ions and the oxygen atoms in the metal salt 3 are mutually attracted, so that the bonding force between the surface of the lead frame 1 and the epoxy resin is increased. Meanwhile, as the surface of the oxide layer 2 has a certain roughness, the lead frame 1 and the epoxy resin have a larger contact area, the risk of layering the epoxy resin and the lead frame 1 is reduced, and the packaging reliability is enhanced.
Embodiments of the present disclosure also provide a chip package product, comprising: the lead frame of any of the above embodiments, the lead frame being adapted to carry a chip; and the packaging material is suitable for packaging the lead frame and the chip, and comprises epoxy resin.
Fig. 2 shows a schematic structural view of a chip-package product according to an embodiment of the present disclosure. Referring to fig. 2, the chip package product includes a lead frame 1, an oxide layer 2 is formed on a part of the surface of the lead frame 1, the oxide layer 2 includes a metal salt 3, the metal salt 3 includes enhanced bonding ions, and the lead frame 1 is the same as the lead frame 1 of any of the above embodiments, and will not be described herein. The lead frame 1 is adapted to carry a chip 4, electrodes of the chip 4 being led out by means of bond wires 5, both ends of the bond wires 5 being connected to conductive layers 7 formed on the surfaces of the chip and the lead frame 1, respectively.
The chip packaging product of the embodiment of the disclosure further includes a packaging material 6, wherein the packaging material 6 packages the chip 4, the bonding wire 5 and a part of the lead frame 1, and the packaging material 6 and the lead frame 1 have surface tension and chemical attraction, so that the bonding strength is high, and delamination is not easy to occur. Therefore, the packaging reliability of the chip packaging product is high.
In some embodiments, the encapsulation material 6 comprises an epoxy resin that includes oxygen atoms in the form of ether linkages or hydroxyl groups that enhance the attraction of the bonding ions and oxygen atoms present in the metal salt 3 to each other, thereby increasing the bonding force of the surface of the leadframe 1 to the epoxy resin. Meanwhile, as the surface of the oxide layer 2 has a certain roughness, the lead frame 1 and the epoxy resin have a larger contact area, the risk of layering the epoxy resin and the lead frame 1 is reduced, and the packaging reliability of the chip packaging product is enhanced.
The embodiment of the present disclosure also provides a method for processing a lead frame, and a lead frame obtained after the processing by the method is the same as the lead frame 1 of any of the above embodiments. The processing method of the lead frame comprises the following steps: providing a lead frame; forming an oxide layer on a part of the surface of the lead frame; the surface of the lead frame is introduced with enhanced binding ions, and the enhanced binding ions comprise: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements.
In some embodiments, the ratio (S ratio) of the actual area of the surface of the oxide layer to the area of the oxide layer on the surface of the leadframe is 1 to 5, and may be, for example, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, or 5, etc.
In the method for processing a lead frame according to the embodiment of the present disclosure, there may be various methods for introducing the enhanced bonding ions to the surface of the lead frame, and the drawings schematically illustrate various embodiments for introducing the enhanced bonding ions, and the method for processing a lead frame of the present disclosure is described in detail below with reference to the drawings.
Fig. 3 shows a flow diagram of a method of processing a lead frame according to a first embodiment of the present disclosure. In a first embodiment of the present disclosure, enhanced binding ions are introduced when an oxide layer is formed on a portion of the surface of the lead frame.
Referring to fig. 3, in S11, a lead frame is provided, the lead frame being made of a metal material, including a single metal or alloy. In some embodiments, the leadframe has been partially electroplated to form a conductive layer on a portion of a surface of the leadframe; in some embodiments, the conductive layer is a silver layer.
In S12, the lead frame is subjected to a pretreatment including pre-cleaning and activation. The pre-cleaning includes: and cleaning the lead frame by using cleaning liquid and then cleaning the lead frame by using deionized water so as to remove oil, dust, dirt, fingerprints and other pollutants or pollution marks on the surface of the lead frame. In some embodiments, the cleaning solution comprises an alkaline solution or an organic solvent, specifically, for example, an aqueous sodium hydroxide solution with a concentration of 10-50 g/L or a triethylamine solution with a mass fraction of 5% -10%. In some embodiments, the cleaning is immersing the leadframe in a cleaning solution to remove contaminants.
The activation is performed after the cleaning is completed, by which the cleaning liquid remaining on the lead frame is removed and the lead frame surface is made free and clean. In some embodiments, the activating comprises: inorganic acids including one or more of hydrochloric acid, phosphoric acid, sulfuric acid, nitric acid are used to remove any remaining alkali and/or oxide films on the lead frame. In some embodiments, the activation is immersing the leadframe in a mineral acid to substantially remove residues from the leadframe surface.
In S13, the lead frame is subjected to oxidation pretreatment. The oxidative pretreatment comprises: the lead frame is placed in an oxidation pretreatment solution to provide a more reactive lead frame surface for subsequent oxidation treatments. In some embodiments, the oxidizing pretreatment fluid comprises: a second modifier and a second additive, wherein the second modifier comprises one or more of triazole, tetrazole and imidazole, and the second additive comprises amine or quaternary ammonium salt.
In S14, an oxide layer is formed on a part of the surface of the lead frame and first enhanced binding ions are introduced. Introducing the first enhanced binding ion comprises: immersing the lead frame in a first treatment liquid to form the oxide layer on a part of the surface of the lead frame and introduce the first enhanced binding ions; the lead frame is cleaned. In some embodiments, forming an oxide layer on a portion of the surface of the leadframe refers to forming an oxide layer on the surface of the leadframe that is not plated with a conductive layer.
In some embodiments, the first treatment fluid includes an oxidizing agent, a first modifying agent, a first additive, and the first enhanced binding ion. In some embodiments, the oxidizing agent comprises one or more of hydrogen peroxide, sodium persulfate, sodium chlorite; the first enhanced binding ion includes one or more of a metal ion of divalent or more, an acid radical ion containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or an acid radical ion containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements. The addition of a first modifier, which in some embodiments includes one or more of triazole, tetrazole, imidazole, and a first additive, which includes an amine or quaternary ammonium salt, is used to control the rate at which an oxide layer forms on a portion of the surface of the leadframe.
In some embodiments, the first enhanced binding ion is a metal ion of more than two valences, and the metal element in the metal ion of more than two valences comprises: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium, and the like.
In some embodiments, the first enhanced binding ion is an acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements, the acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements comprising: phosphate ions, arsenate ions, antimonate ions, or the like.
In some embodiments, the first enhanced binding ion is an acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements, the acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements comprising: silicate ion or germanate ion, and the like.
In some embodiments, in the first treatment fluid, the mass fraction of the first enhanced binding ion is 1% to 10%, and the mass fraction of the oxidizing agent is 1% to 10%.
In some embodiments, the oxide layer has a thickness ofIn some embodiments, the oxide layer has a thickness of +.>
In some embodiments, the ratio (S ratio) of the actual area of the surface of the oxide layer to the area of the oxide layer on the surface of the leadframe is 1 to 5, and the first enhanced binding ions adhere to the surface of the oxide layer and its depressions.
In some embodiments, the material of the lead frame is copper or copper alloy, and the formed oxide layer comprises copper oxide, such as copper oxide and cuprous oxide.
In some embodiments, after the oxide layer is formed and the first enhanced bonding ions are introduced, the leadframe is rinsed with deionized water.
In S15, the lead frame is subjected to an oxidation post-treatment. Metal oxides, metal salts or other contaminants are removed by oxidative post-treatment, particularly by-products generated during the formation of the oxide layer. In some embodiments, the oxidizing the leadframe includes: the lead frame is immersed in the post-oxidation treatment liquid to improve the purity of the oxide layer formed by reducing contaminants.
In some embodiments, the post-oxidation treatment fluid includes a complexing or chelating agent, which may be one of a variety of nitrogen, oxygen, or sulfur-containing compounds. In some embodiments, the complexing agent may be a nitrogen-containing compound, such as, specifically, one or more of ammonia, an ammonium salt (e.g., ammonium chloride), an amino acid (e.g., ethylenediamine tetraacetic acid). In some embodiments, the complexing agent may be an oxygen-containing compound, specifically, for example, one or more of a compound containing a carboxyl group (e.g., oxalate, acetate) or a hydroxyl group (e.g., hydroxide, citrate, tartrate, lactate). In some embodiments, the complexing agent may be a sulfur-containing compound, such as, specifically, thiosulfate, thiocyanate, thiol, or mercaptocarboxylic acid (e.g., thiolactic acid).
In some embodiments, the complexing or chelating agent is present in the post-oxidation treatment fluid in an amount of 1% to 10% by mass.
To increase the reaction rate of the oxidation post-treatment and enhance the effectiveness of the oxidation post-treatment, in some embodiments, ultrasonic waves, spraying, heating, compressed air, or other processes are applied while the lead frame is immersed in the oxidation post-treatment solution for reaction to facilitate removal of contaminants.
In S16, the cleaning and drying of the lead frame specifically includes: the leadframe is post-cleaned to remove any metal complex, metal salt, or other contaminant residue remaining in the post-oxidation treatment. In some embodiments, the post-cleaning comprises: the lead frame is immersed in a mixture containing one or more of inorganic acid, sulfuric acid, hydrochloric acid, phosphorous acid and nitric acid, and then rinsed with deionized water to remove residual inorganic acid on the surface of the lead frame. In some embodiments, the mass fraction of the mineral acid is 1% to 10%.
After post-cleaning, the lead frame is dried. In some embodiments, the drying comprises: the lead frame is placed in a warm dry, flowing air environment so that the lead frame is gradually dried.
In some embodiments, the temperature of the warm dry flowing air ranges from 60 ℃ to 150 ℃.
In some embodiments, the leadframe is placed at the air outlet of a blower, and the leadframe is dried by blowing warm air from the blower.
And (3) processing the lead frame by adopting the processing method of S11-S16 to obtain the lead frame with a dry and clean surface, wherein one or more metal salts are formed on an oxide layer on part of the surface of the lead frame, and the first enhanced binding ions exist in the metal salts.
In the first embodiment, the lead frame processed by the processing method described in S11 to S16 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the first enhanced bonding ion existing in the solid metal salt attracts oxygen atoms mutually, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced.
Fig. 4 shows a flow diagram of a method of processing a lead frame according to a second embodiment of the present disclosure. In a second embodiment of the present disclosure, enhanced binding ions are introduced in the oxidation pretreatment of the lead frame.
Referring to fig. 4, the processing procedures shown in S21, S22, S25 and S26 are similar to those of S11, S12, S15 and S16 in the first embodiment, respectively, and therefore, specific processing procedures of S21, S22, S25 and S26 are not described here.
In S23, the lead frame is subjected to oxidation pretreatment and a second enhanced binding ion is introduced, specifically including: immersing the lead frame in a second treatment liquid. In some embodiments, the second treatment fluid includes a second modifier, a second additive, and the second enhanced binding ion, the second enhanced binding ion including one or more of a metal ion of more than two valencies, an acid radical ion comprising a group V element from cycle 3 to cycle 5 of the periodic table, or an acid radical ion comprising a group IV element from cycle 3 to cycle 6 of the periodic table.
In some embodiments, the second modifier comprises one or more of triazole, tetrazole, imidazole, and the second additive comprises an amine or a quaternary ammonium salt.
In some embodiments, the second enhanced binding ion is a metal ion of more than two valences, the metal element in the metal ion of more than two valences comprising: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium, and the like.
In some embodiments, the second enhanced binding ion is an acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements, the acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements comprising: phosphate ions, arsenate ions, antimonate ions, or the like.
In some embodiments, the second enhanced binding ion is an acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements, the acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements comprising: silicate ion or germanate ion, and the like.
In some embodiments, the mass fraction of the second enhanced binding ions in the second treatment fluid is between 1% and 10%. The mass fraction of the second modifier is 1-10%, and the mass fraction of the second additive is 1-10%.
In S24, an oxide layer is formed on a part of the surface of the lead frame, specifically including: placing the lead frame in oxidation treatment liquid for reaction; the lead frame is cleaned. In some embodiments, forming an oxide layer on a portion of the surface of the leadframe refers to forming an oxide layer on the surface of the leadframe that is not plated with a conductive layer.
In some embodiments, the oxidizing treatment fluid includes an oxidizing agent, a first modifying agent, and a first additive. In some embodiments, the oxidizing agent comprises one or more of hydrogen peroxide, sodium persulfate, and sodium chlorite. The addition of a first modifier, which in some embodiments includes one or more of triazole, tetrazole, imidazole, and a first additive, which includes an amine or quaternary ammonium salt, is used to control the rate at which an oxide layer forms on a portion of the surface of the leadframe.
In some embodiments, the mass fraction of the oxidizing agent in the oxidizing treatment fluid is 1% to 10%.
In some embodiments, the oxide layer is formed to a thickness ofIn some embodiments, the oxide layer has a thickness of +.>
In some embodiments, the ratio (S ratio) of the actual area of the surface of the oxide layer to the area of the oxide layer on the surface of the leadframe is 1 to 5.
In some embodiments, the material of the lead frame is copper or copper alloy, and the formed oxide layer comprises copper oxide, such as copper oxide and cuprous oxide.
In some embodiments, after the oxide layer is formed, the leadframe is rinsed with deionized water.
The lead frame is processed by the processing method of S21-S26, so as to obtain the lead frame with a dry and clean surface, one or more metal salts are formed on the oxide layer on part of the surface of the lead frame, and the second enhanced binding ions exist in the metal salts.
In the second embodiment, the lead frame processed by the processing method described in S21 to S26 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the second reinforcing bonding ions existing in the solid metal salt attract each other with the oxygen atoms, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced. The lead frame is subjected to oxidation pretreatment and second enhancement binding ions are introduced, and then an oxide layer is formed on part of the surface of the lead frame, so that more second enhancement ions are attached to the surface of the lead frame, and the solid metal salt content of the treated surface of the lead frame, which contains the second enhancement ions, is higher.
Fig. 5 shows a flow diagram of a method of processing a lead frame according to a third embodiment of the present disclosure. In a third embodiment of the present disclosure, enhanced binding ions are introduced in the post-oxidation treatment of the lead frame.
Referring to fig. 5, the processing procedures shown in S31, S32, S33 and S36 are similar to those of S11, S12, S13 and S16 in the first embodiment, respectively, and the processing procedure shown in S34 is similar to that of S24 in the second embodiment, and therefore, specific processing procedures of S31, S32, S33, S34 and S36 are not repeated here.
In S35, performing an oxidation post-treatment on the lead frame and introducing a third enhanced binding ion, specifically including: the leadframe is immersed in a third treatment liquid to introduce the third enhanced binding ions and remove metal oxides, metal salts or other contaminants, particularly byproducts generated during the formation of the oxide layer.
In some embodiments, the third treatment fluid comprises a complexing or chelating agent, and the third enhanced binding ion.
In some embodiments, the complexing or chelating agent may be one of a variety of nitrogen, oxygen, or sulfur-containing compounds. In some embodiments, the complexing agent may be a nitrogen-containing compound, such as, specifically, one or more of ammonia, an ammonium salt (e.g., ammonium chloride), an amino acid (e.g., ethylenediamine tetraacetic acid). In some embodiments, the complexing agent may be an oxygen-containing compound, specifically, for example, one or more of a compound containing a carboxyl group (e.g., oxalate, acetate) or a hydroxyl group (e.g., hydroxide, citrate, tartrate, lactate). In some embodiments, the complexing agent may be a sulfur-containing compound, such as, specifically, thiosulfate, thiocyanate, thiol, or mercaptocarboxylic acid (e.g., thiolactic acid).
The third enhanced binding ion comprises: one or more of metal ions having a valence of two or more, acid radical ions containing a group V element of the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element of the 3 rd to 6 th periods of the periodic table of elements.
In some embodiments, the third enhanced binding ion is a metal ion of more than two valences, and the metal element in the metal ion of more than two valences includes: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium, and the like.
In some embodiments, the third enhanced binding ion is an acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements, the acid ion comprising a V main group element of the 3 rd to 5 th periods of the periodic table of elements comprising: phosphate ions, arsenate ions, antimonate ions, or the like.
In some embodiments, the third enhanced binding ion is an acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements, the acid ion comprising an element of main group IV of periods 3 to 6 of the periodic table of elements comprising: silicate ion or germanate ion, and the like.
In some embodiments, in the third treatment fluid, the mass fraction of the third enhanced binding ion is 1% to 10%, and the mass fraction of the complexing or chelating agent is 1% to 10%.
To increase the reaction rate of the oxidation post-treatment and enhance the effectiveness of the oxidation post-treatment, in some embodiments, ultrasonic waves, spraying, heating, compressed air, or other processes are applied while the lead frame is immersed in the oxidation post-treatment solution for reaction to promote the relevant chemical reactions that occur to remove contaminants.
In some embodiments, the first and/or second enhanced bonding ions have been introduced before the third enhanced bonding ions are introduced, and the first and/or second enhanced bonding ions of the portion of the leadframe surface are removed by applying ultrasonic waves in S35 so that the third enhanced bonding ions replace the first and/or second enhanced bonding ions of the portion without increasing the total thickness of the oxide layer, the third enhanced bonding ions are more adhered to the surface of the leadframe, are more easily contacted with the encapsulation material in the encapsulation, and thus provide the leadframe with better bonding strength with the encapsulation material.
In some embodiments, the oxide layer has a thickness ofIn some embodiments, the oxide layer has a thickness of +.>
In some embodiments, after the oxidation post-treatment, the surface of the oxide layer has a certain roughness, the ratio (S ratio) of the actual area of the surface of the oxide layer to the area occupied by the oxide layer on the surface of the lead frame is 1-5, and the third enhanced bonding ions adhere to the surface of the oxide layer and the depressions thereof.
The lead frame is processed by the processing method described in S31-S36, so as to obtain the lead frame with a dry and clean surface, one or more metal salts are formed on the oxide layer on part of the surface of the lead frame, and the third enhanced binding ions exist in the metal salts.
In the third embodiment, the lead frame processed by the processing method described in S31 to S36 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the third reinforcing bonding ion existing in the solid metal salt attracts oxygen atoms mutually, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced. And carrying out oxidation post-treatment on the lead frame, introducing third enhanced bonding ions, and forming an oxide layer on part of the surface of the lead frame, namely finally forming solid metal salt containing the third enhanced bonding ions on the oxidized and roughened surface of the lead frame, so that more solid metal salt is favorably formed on the surface of the lead frame, and meanwhile, the roughness of the surface of the lead frame is ensured, and the lead frame and the epoxy resin keep good surface tension and chemical bonding force.
The first, second and third embodiments of the present disclosure show three lead frame processing methods, except for the step of introducing enhanced binding ions. In practical applications, the first, second and third embodiments of the present disclosure may be implemented separately or in combination to further enhance the effect of introducing the bonding ions. Fig. 6 to 9 show a fourth embodiment, a fifth embodiment, a sixth embodiment and a seventh embodiment based on a combination of two by two or three between the first embodiment, the second embodiment and the third embodiment.
Fig. 6 shows a flow diagram of a method of processing a lead frame according to a fourth embodiment of the present disclosure. In a fourth embodiment of the present disclosure, enhanced bonding ions are introduced in the oxidation pretreatment of the lead frame, and the enhanced bonding ions are introduced when an oxide layer is formed on a part of the surface of the lead frame.
Referring to fig. 6, the processing procedures shown in S41, S42, S44, S45 and S46 are similar to those of S11, S12, S14, S15 and S16 in the first embodiment, respectively, and the processing procedure shown in S43 is similar to that of S23 in the second embodiment, and therefore, specific processing procedures of S41, S42, S43, S44, S45 and S66 are not repeated here.
In S43 and S44, a second enhanced binding ion and a first enhanced binding ion are introduced, respectively, which may be the same or different from the first enhanced binding ion.
And (2) processing the lead frame by adopting the processing method of S41-S46 to obtain the lead frame with a dry and clean surface, wherein one or more metal salts are formed on an oxide layer on part of the surface of the lead frame, and the first enhanced binding ions and the second enhanced binding ions exist in the metal salts.
In the fourth embodiment, the lead frame processed by the processing method described in S41 to S46 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the first enhanced bonding ion and the second enhanced bonding ion existing in the solid metal salt are both attracted to each other with the oxygen atoms, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has a certain roughness and has a larger contact area with the epoxy resin, the risk of delamination between the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced.
Fig. 7 shows a flow diagram of a processing method of a lead frame according to a fifth embodiment of the present disclosure. In a fifth embodiment of the present disclosure, enhanced bonding ions are introduced when an oxide layer is formed on a part of the surface of the lead frame, and the enhanced bonding ions are introduced in the oxidation post-treatment of the lead frame.
Referring to fig. 7, the processing procedures shown in S51, S52, S53, S54 and S56 are similar to those of S11, S12, S13, S14 and S16 in the first embodiment, respectively, and the processing procedure shown in S55 is similar to that of S35 in the third embodiment, and therefore, specific processing procedures of S51, S52, S53, S54, S55 and S56 are not repeated here.
In S54 and S55, a first enhanced binding ion and a third enhanced binding ion are introduced, respectively, which may be the same or different from the third enhanced binding ion.
And (3) processing the lead frame by adopting the processing method of S51-S56 to obtain the lead frame with a dry and clean surface, wherein one or more metal salts are formed on an oxide layer on part of the surface of the lead frame, and the first enhanced binding ions and the third enhanced binding ions exist in the metal salts.
In the fifth embodiment, the lead frame processed by the processing methods described in S51 to S56 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the first enhanced bonding ion and the third enhanced bonding ion existing in the solid metal salt are both attracted to each other with the oxygen atoms, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced.
Fig. 8 shows a flowchart of a processing method of a lead frame according to a sixth embodiment of the present disclosure. In a sixth embodiment of the present disclosure, enhanced binding ions are introduced in the oxidation pretreatment of the lead frame and enhanced binding ions are introduced in the oxidation post-treatment of the lead frame.
Referring to fig. 8, the processing procedures shown in S61, S62 and S66 are similar to those of S11, S12 and S16 in the first embodiment, respectively, the processing procedures shown in S63 and S64 are similar to those of S23 and S24 in the second embodiment, respectively, and the processing procedure shown in S65 is similar to that of S35 in the third embodiment, and therefore, specific processing procedures of S61, S62, S63, S64, S65 and S66 are not repeated here.
In S63 and S65, a second enhanced binding ion and a third enhanced binding ion are introduced, respectively, which may be the same or different from the third enhanced binding ion.
And (3) processing the lead frame by adopting the processing method of S61-S66 to obtain the lead frame with a dry and clean surface, wherein one or more metal salts are formed on an oxide layer on part of the surface of the lead frame, and the second enhanced binding ions and the third enhanced binding ions exist in the metal salts.
In the sixth embodiment, the lead frame processed by the processing method described in S61 to S66 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the second enhanced bonding ion and the third enhanced bonding ion existing in the solid metal salt are both attracted to each other with the oxygen atoms, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced.
Fig. 9 shows a flowchart of a processing method of a lead frame according to a seventh embodiment of the present disclosure. In a seventh embodiment of the present disclosure, the enhanced bonding ions are introduced in the oxidation pretreatment of the lead frame, the enhanced bonding ions are introduced when the oxide layer is formed on a part of the surface of the lead frame, and the enhanced bonding ions are introduced in the oxidation post-treatment of the lead frame.
Referring to fig. 9, the processing procedures shown in S71, S72, S74 and S76 are similar to S11, S12, S14 and S16, respectively, in the first embodiment, the processing procedure shown in S73 is similar to S23 in the second embodiment, and the processing procedure shown in S75 is similar to S35 in the third embodiment, and therefore, specific processing procedures of S71, S72, S73, S74, S75 and S76 are not repeated here.
In S73, introducing a second enhanced binding ion; in S74, introducing a first enhanced binding ion; in S75, a third enhanced binding ion is introduced. The first enhanced binding ion, the second enhanced binding ion, and the third enhanced binding ion may be the same or different.
And (3) processing the lead frame by adopting the processing method described in S71-S76 to obtain the lead frame with a dry and clean surface, wherein one or more metal salts are formed on an oxide layer on part of the surface of the lead frame, and the first enhanced binding ions, the second enhanced binding ions and the third enhanced binding ions exist in the metal salts.
In the seventh embodiment, the lead frame processed by the processing method described in S71 to S76 may be used for chip packaging, and the common packaging material is epoxy resin, where the epoxy resin includes oxygen atoms in the form of ether bond or hydroxyl, and the first enhanced bonding ion, the second enhanced bonding ion and the third enhanced bonding ion existing in the solid metal salt all attract each other with the oxygen atoms, so as to increase the bonding force between the surface of the lead frame and the epoxy resin. Meanwhile, as the surface of the oxide layer has certain roughness and has larger contact area with the epoxy resin, the risk of layering the epoxy resin and the lead frame is reduced, and the reliability of packaging is enhanced.
The above first to seventh embodiments are illustrative of the introduction of enhanced binding ions in different steps, and the possible specific embodiments of the present disclosure and the scope of protection of the present disclosure are not limited to the first to seventh embodiments.
The embodiment of the disclosure also provides a chip packaging method, which comprises the following steps: providing a lead frame, and processing the lead frame by adopting any lead frame processing method; bonding the chip to the lead frame, and electrically connecting the chip to the lead frame through bonding wires; and packaging the chip, the bonding wires and part of the lead frame by adopting packaging materials.
In some embodiments, the lead frame has been partially electroplated to form a conductive layer on a portion of a surface of the lead frame prior to processing the lead frame using any of the above methods of processing the lead frame; in some embodiments, the conductive layer is a silver layer that serves as a bonding pad layer to facilitate electrical connection between the bond wires and the leadframe and chip.
In some embodiments, the leadframe is made of copper or copper alloy, and the oxide layer formed on a part of the surface of the leadframe includes copper oxide, such as copper oxide and cuprous oxide.
In some embodiments, the encapsulation material comprises an epoxy.
By adopting the chip packaging method of the embodiment of the disclosure, one or more of divalent metal ions, acid radical ions containing elements of the V main group from the 3 rd period to the 5 th period of the periodic table of elements, acid radical ions containing elements of the IV main group from the 3 rd period to the 6 th period of the periodic table of elements and the like are introduced to the surface of the processed lead frame, and the processed lead frame is packaged by a packaging material, so that the packaging material and the lead frame have good bonding strength, are not easy to delaminate, and have high packaging reliability.
The chip is packaged by adopting the chip packaging method of the embodiment of the disclosure, and the obtained chip packaging product is the chip packaging product of any embodiment, and the lead frame and the packaging material have good bonding strength and high packaging reliability.
The foregoing description of the exemplary embodiments has been presented only for the purpose of illustrating the principles of the present disclosure and is not intended to limit the scope of the present disclosure. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the disclosure, and are also within the scope of the disclosure.
Claims (10)
1. A lead frame, wherein an oxide layer is formed on a part of a surface of the lead frame, and wherein a metal salt is formed on the oxide layer, the metal salt including enhanced binding ions, the enhanced binding ions comprising: divalent or more metal ions, acid radical ions containing a group V element from the 3 rd to 5 th periods of the periodic table of elements, or acid radical ions containing a group IV element from the 3 rd to 6 th periods of the periodic table of elements.
2. The lead frame according to claim 1, wherein the metal element in the divalent or higher metal ion includes: aluminum, zinc, iron, magnesium, calcium, tin, cadmium, copper, nickel, palladium, cobalt, rhodium, ruthenium, manganese, technetium, chromium, molybdenum, vanadium, niobium, titanium, zirconium, scandium, or yttrium.
3. The lead frame according to claim 1, wherein the acid radical ion containing the V main group element of the 3 rd to 5 th periods of the periodic table comprises: phosphate ions, arsenate ions or antimonate ions.
4. The leadframe of claim 1, wherein the acid ion comprising the IV main group element of the 3 rd to 6 th periods of the periodic table comprises: silicate ions.
5. The lead frame according to any one of claims 1 to 4, wherein a ratio of an actual area of a surface of the oxide layer to an area of the oxide layer occupied on the surface of the lead frame is 1 to 5.
6. The lead frame of any of claims 1-4, wherein the oxide layer has a thickness of
7. The lead frame according to any of claims 1-4, wherein the lead frame is made of copper or copper alloy, and the oxide layer comprises copper oxide.
8. The lead frame according to any one of claims 1 to 4, wherein a conductive layer is further formed on a surface of the lead frame.
9. The leadframe of claim 8, wherein the conductive layer comprises silver.
10. A chip package product, comprising:
the leadframe according to any one of claims 1-9, adapted to carry a chip;
and the packaging material is suitable for packaging the lead frame and the chip, and comprises epoxy resin.
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|---|---|---|---|
| CN202322000267.8U CN220604682U (en) | 2023-07-27 | 2023-07-27 | Lead frame and chip package product |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322000267.8U CN220604682U (en) | 2023-07-27 | 2023-07-27 | Lead frame and chip package product |
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| CN220604682U true CN220604682U (en) | 2024-03-15 |
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| CN202322000267.8U Active CN220604682U (en) | 2023-07-27 | 2023-07-27 | Lead frame and chip package product |
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