KR100326300B1 - Solder ball and method for coating it - Google Patents
Solder ball and method for coating it Download PDFInfo
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- KR100326300B1 KR100326300B1 KR1019990034672A KR19990034672A KR100326300B1 KR 100326300 B1 KR100326300 B1 KR 100326300B1 KR 1019990034672 A KR1019990034672 A KR 1019990034672A KR 19990034672 A KR19990034672 A KR 19990034672A KR 100326300 B1 KR100326300 B1 KR 100326300B1
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- South Korea
- Prior art keywords
- tin
- solder
- layer
- plating
- solder ball
- Prior art date
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000011248 coating agent Substances 0.000 title claims abstract description 13
- 238000000576 coating method Methods 0.000 title claims abstract description 13
- 238000007747 plating Methods 0.000 claims abstract description 48
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052718 tin Inorganic materials 0.000 claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 15
- 229910000978 Pb alloy Inorganic materials 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 33
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 238000002845 discoloration Methods 0.000 abstract description 5
- 239000011247 coating layer Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 230000007257 malfunction Effects 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- ATJFFYVFTNAWJD-QQVBLGSISA-N tin-111 Chemical compound [111Sn] ATJFFYVFTNAWJD-QQVBLGSISA-N 0.000 abstract description 2
- ATJFFYVFTNAWJD-AKLPVKDBSA-N tin-122 Chemical compound [122Sn] ATJFFYVFTNAWJD-AKLPVKDBSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/16—Apparatus for electrolytic coating of small objects in bulk
- C25D17/18—Apparatus for electrolytic coating of small objects in bulk having closed containers
- C25D17/20—Horizontal barrels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
본 발명은 BGA(ball grid array) 패키지용 솔더 볼 및 이의 도금방법에 관한 것이다. 종래에는 솔더 볼이 패키지 제조공정중 공기접촉으로 산화 및 부식됨은 물론 솔더 볼 상호간의 접촉에 의한 마찰 및 충격으로 그 형태가 변색 및 변형됨으로써 패키지 제조의 불량 및 어려움을 초래할 뿐만 아니라 전기적인 접촉 저항으로 인한 오동작을 발생시키는 문제점이 있었다.The present invention relates to a solder ball for a ball grid array (BGA) package and a plating method thereof. Conventionally, solder balls are oxidized and corroded by air contact during the package manufacturing process, as well as discoloration and deformation due to friction and impact caused by contact between solder balls, resulting in defects and difficulties in package manufacturing and electrical contact resistance. There was a problem that caused a malfunction.
따라서 본 발명은 도금액(10A)이 담겨진 도금조(10)에 걸림턱(22)을 갖는 개방부(21)가 양측에 형성되고 회전축(23)으로 회전가능하게 횡방향으로 설치된 드럼(20) 내부에 납과 주석의 합금으로 된 구(100)를 투입하고, 상기 드럼(20) 내부에 코일스프링 형태로 형성된 전원부(30)의 (-)전극(31)과 도금액(10A)에 연결된 (+)전극(32)에 전원을 인가시켜서 된 솔더 볼의 도금방법이 제공되고, 상기의 방법에 의해서 솔더 볼의 모재가 되는 구(100) 표면에 주석(111)의 단일 코팅막(100A)이 형성되거나, 구리(120) 및 솔더(121)와 주석(122), 또는 은(131) 및 솔더(132)와 주석(133), 그리고 은(141) 및 구리(142)와 솔더(143) 및 주석(144)의 다층으로 된 코팅막(120)(130)(140)이 형성된 솔더 볼이 제공됨으로써 제조 공정중 솔더 볼 상호간의 접촉에 의한 마찰 및 충격으로 그 형태가 변색 및 변형되거나 외부공기의 접촉으로 산화 및 부식되는 것을 미연에 방지할 수 있을 뿐만 아니라 반도체 패키지 제조의 불량률을 현저하게 감소시킬 수 있는 효과를 갖게 된다. 또한0.55mm 이하의 미세 직경을 갖는 솔더 볼의 도금이 보다 균일하게 이루어짐으로써 제품의 품질 향상을 기할 수 있는 효과를 갖게 된다.Therefore, in the present invention, the opening portion 21 having the latching jaw 22 is formed at both sides in the plating bath 10 in which the plating solution 10A is contained, and the drum 20 is installed in the transverse direction so as to be rotatable with the rotation shaft 23. A sphere 100 made of an alloy of lead and tin is introduced into the drum, and a positive electrode connected to the negative electrode 31 and the plating solution 10A of the power supply unit 30 formed in a coil spring form in the drum 20. A method of plating a solder ball by applying power to an electrode 32 is provided, and a single coating film 100A of tin 111 is formed on the surface of a sphere 100 serving as a base material of the solder ball, or Copper 120 and solder 121 and tin 122 or silver 131 and solder 132 and tin 133 and silver 141 and copper 142 and solder 143 and tin 144 Since the solder balls formed with the multilayered coating layers 120, 130, and 140 of the multi-layer coating layer are provided, the shape is discolored and deformed due to friction and impact due to contact between the solder balls during the manufacturing process. In addition, it is possible to prevent oxidation and corrosion due to contact with external air, and to significantly reduce the defect rate of semiconductor package manufacturing. In addition, since the plating of the solder ball having a fine diameter of 0.55 mm or less is made more uniform, the quality of the product can be improved.
Description
본 발명은 BGA(ball grid array) 패키지용 솔더볼 및 이의 도금방법에 관한 것으로, 특히 BGA 패키지 제조공정중 솔더볼 상호간의 접촉에 의한 마찰 및 충격으로 인한 솔더볼의 형태 변형 및 변색과 부식을 방지할 수 있도록 한 방지할 수 있도록 한 솔더볼 및 이의 도금방법에 관한 것이다.The present invention relates to a solder ball for a ball grid array (BGA) package and a plating method thereof, and in particular, to prevent deformation and discoloration and corrosion of the solder ball due to friction and impact caused by contact between solder balls during a BGA package manufacturing process. It relates to a solder ball and a plating method thereof so as to prevent it.
최근들어 혼성집적회로(HIC)의 설계 및 조립기술의 발전으로 인하여 고기능화가 이루어지면서 HIC의 패키지도 SIP(Single In-line Package)에서 DIP(Dual In-line Package), QFP(Quad Flat Package)형태로 발전하였으며 입/출력 단자의 간격도 100밀(1밀;1/1000인치), 75밀, 50밀로 더욱더 집적도가 높아지고 있다.Recently, due to the development of hybrid integrated circuit (HIC) design and assembly technology, high functionalization has been achieved, and HIC's packages are also divided into SIP (Single In-line Package), DIP (Dual In-line Package) and QFP (Quad Flat Package). The input and output terminals have been increased to 100 mils (1 mil; 1/1000 inch), 75 mils, and 50 mils.
또한 입/출력 단자수가 수백개이며 표면실장이 가능한 소자가 요구되어 리드없는 볼 그리드 어레이(BGA;Ball Grid Array)반도체 패키지 최근 들어 HIC 패키지로서 개발되고 있는 추세에 있다.In addition, there are hundreds of input / output terminals and a surface mountable device is required. Therefore, a lead-free ball grid array (BGA) semiconductor package has recently been developed as an HIC package.
상기 BGA패키지는 볼의 종류에 따라 금(Au),은 BGA와 솔더BGA로 나누어지나 가격측면에 강점이 있는 솔더볼 형태의 BGA 패키지가 HIC에 많이 적용되고 있는 실정에 있는 것으로, 상기 솔더볼은 주석 63% 함량을 갖는 주석, 납의 합금으로 제조되고, PCB(Print circuit board)의 하면에 형성되어 패키지 내부의 회로와 패키지 외부의 회로를 연결시켜주는 기능을 갖는다.The BGA package is divided into gold (Au), silver BGA, and solder BGA depending on the type of ball, but the BGA package in the form of a solder ball having strength in terms of price is widely applied to HIC. It is made of an alloy of tin and lead having a% content, and is formed on the lower surface of a printed circuit board (PCB) to connect a circuit inside the package with a circuit outside the package.
이를 좀더 구체적으로 설명하면, 도 4에 도시된 바와같이 BGA 반도체 패키지는 인쇄회로기판(PCB)(101)의 상부에 직접 웨이퍼 프로세서에 의해 원하는 회로 소자가 형성된 반도체 칩(102)을 부착한다. 그리고 상기 인쇄회로기판(101) 상의 회로패턴에 반도체 칩(102)의 칩패드를 와이어(103)로 본딩하여 전기적으로 연결시키며, 상기 반도체 칩(102) 및 와이어(103) 등을 외부 환경으로부터 보호하기 위해 에폭시 몰딩 컴파운드(104)를 형성한다. 또한 반도체 칩(102)의 신호 인출을 위해 상기 인쇄회로기판(101)의 저면에 솔더볼(S)이 융착되는 것으로, 상기 솔더볼(S)과 반도체 칩(102)은 인쇄회로기판(101) 내부에 형성된 소정의 전도성 패턴에 의해 전기적으로 연결되어 있어 외부의 전기적 신호가 반도체 칩(102)으로 들어가 상기 반도체 칩(102)에서 나온 데이터들이 솔더볼(S)을 통해 외부로 출력될 수 있도록 구성되어 있다. 특히 솔더볼(S)을 전원 전압단자나 접지 전원단자로 사용하며, 전기적으로 연결 거리가 짧기 때문에 인덕턴스와 저항을 줄일 수 있을 뿐만 아니라 반도체 칩(102)에서 발생되는 열을 외부로 방출하는 기능도 겸한다. 그리고 이렇게 인쇄회로기판(101)의 저면에 솔더볼(S)을 융착한 후에는 이를 마더보드(메인 인쇄회로기판)에 접속하는 식으로 볼 그리드 어레이 반도체 패키지를 구성하도록 되어 있다.More specifically, as shown in FIG. 4, the BGA semiconductor package attaches a semiconductor chip 102 on which a desired circuit element is formed by a wafer processor directly on a printed circuit board (PCB) 101. In addition, the chip pad of the semiconductor chip 102 is electrically connected to the circuit pattern on the printed circuit board 101 by wire 103 to protect the semiconductor chip 102 and the wire 103 from an external environment. In order to form the epoxy molding compound 104. In addition, the solder ball (S) is fused to the bottom surface of the printed circuit board 101 for the signal extraction of the semiconductor chip 102, the solder ball (S) and the semiconductor chip 102 is inside the printed circuit board 101 It is electrically connected by a predetermined conductive pattern formed so that an external electrical signal enters the semiconductor chip 102 so that data from the semiconductor chip 102 can be output to the outside through the solder ball S. In particular, the solder ball S is used as a power voltage terminal or a ground power terminal, and since the connection distance is short, the inductance and resistance can be reduced, and the heat generated from the semiconductor chip 102 can also be discharged to the outside. do. After the solder ball S is fused to the bottom surface of the printed circuit board 101, the ball grid array semiconductor package is configured by connecting the solder ball S to the motherboard (main printed circuit board).
그러나 이러한 종래의 솔더볼은 패키지 제조공정중 외부 공기와의 접촉으로 산화 또는 부식될 뿐만 아니라 솔더볼 상호 간의 접촉으로 인한 마찰 및 충격으로 그 형태가 변색 및 변형됨으로써 많은 불량을 초래함은 물론 전기적인 저항 및 접촉으로 신호 입출력에 따른 오동작을 유발시키게 되는 문제점 있었다.However, such a conventional solder ball is not only oxidized or corroded by contact with external air during the package manufacturing process, but also causes a lot of defects due to discoloration and deformation due to friction and impact caused by contact between solder balls. There was a problem that caused a malfunction due to signal input and output by contact.
따라서 본 발명은 상기한 바와같은 종래의 제반 문제점을 해소하기 위해서 창안된 것으로, 그 목적은 제조공정중 솔더볼 상호 간의 접촉으로 인한 마찰 및 충격으로 그 형태가 변색 및 변형되거나 외부 공기와의 접촉으로 산화되거나 부식되는 것을 미연에 방지토록 하는데 있다. 본 발명의 다른 목적은 솔더볼의 도금이 보다 균일하게 이루어질 수 있도록 하는데 있다.Therefore, the present invention was devised to solve the conventional problems as described above, the object of which is the discoloration and deformation of the shape due to friction and impact due to contact between the solder balls during the manufacturing process, or oxidized by contact with external air To prevent corrosion or corrosion. Another object of the present invention is to make the plating of the solder ball more uniform.
이러한 본 발명의 목적을 달성하기 위하여 도금액이 담겨진 도금조에 걸림턱을 갖는 개방부가 양측으로 형성되고 회전축을 중심으로 회전가능하게 횡방향으로 설치된 드럼의 내부에 코일스프링 형태로 전원부가 형성된 전기도금장치의 드럼 내부에 납과 주석의 합금으로 된 다수의 구를 투입하여 내장시키고, 전원부에는 (-)전하를 도입하고 도금액에 (+)전하를 갖는 전극을 침지시킨 상태에서 드럼(20)을 회전하면서 전류를 공급함을 특징으로 하는 솔더볼의 도금방법이 제공된다.In order to achieve the object of the present invention, the electroplating apparatus of the electroplating apparatus is formed in the coil spring form in the inner side of the drum is formed in both sides of the opening having a locking jaw in the plating bath containing the plating solution and installed in the transverse direction so as to rotate about the rotation axis. Inside the drum, a large number of spheres made of an alloy of lead and tin are introduced and embedded, and the electric current is rotated while the drum 20 is rotated while introducing a negative charge to the power supply and immersing an electrode having a positive charge in the plating solution. Provided is a plating method of a solder ball, characterized in that to supply.
그리고 납과 주석의 합금으로 된 구(100)의 표면에 주석의 코팅막(100A)이 형성된 것을 특징으로 한 솔더볼이 제공된다.And there is provided a solder ball, characterized in that the coating film of tin (100A) is formed on the surface of the sphere 100 of the alloy of lead and tin.
또, 납과 주석의 합금으로 된 구(100)의 표면에 1차 구리층(121)이 형성되고, 그 위에 납 27%와 주석 63%의 합금으로 된 솔더층(122)이 형성되며, 상기 솔더층(122) 위에 주석층(123)이 형성된 것을 특징으로 한 솔더볼이 제공된다.Further, a primary copper layer 121 is formed on the surface of the sphere 100 made of an alloy of lead and tin, and a solder layer 122 made of an alloy of 27% lead and 63% tin is formed thereon. There is provided a solder ball, characterized in that the tin layer 123 is formed on the solder layer 122.
또, 납과 주석의 합금으로 된 구(100)의 표면에 1차 실버층(131)이 형성되고, 그 위에 납 27%와 주석 63%의 합금으로 된 솔더층(132)이 형성되며, 상기 솔더층(132) 위에 주석층(133)이 형성된 것을 특징으로 한 솔더볼이 제공된다.또, 납과 주석의 합금으로 된 구(100)의 표면에 1차 실버층(141)이 형성되고, 그 위에 구리층(142)가 형성되며, 상기 구리층(142) 위에 납 27%과 주석 63%의 합금으로 된 솔더층(143)이 형성되고, 상기 솔더층(143) 위에 주석층(144)이 형성된 것을 특징으로 한 솔더볼이 제공된다.Further, a primary silver layer 131 is formed on the surface of the sphere 100 made of an alloy of lead and tin, and a solder layer 132 made of an alloy of 27% lead and 63% tin is formed thereon. A solder ball is provided, characterized in that a tin layer 133 is formed on the layer 132. A primary silver layer 141 is formed on the surface of the sphere 100 made of an alloy of lead and tin, and copper is formed thereon. A layer 142 is formed, and a solder layer 143 formed of an alloy of 27% lead and 63% tin is formed on the copper layer 142, and a tin layer 144 is formed on the solder layer 143. Featured solder balls are provided.
도 1은 본 발명의 일 실시예를 보인 도금장치의 구성도.1 is a block diagram of a plating apparatus showing an embodiment of the present invention.
도 2는 본 발명의 다른 실시예를 보인 도금장치의 구성도.2 is a block diagram of a plating apparatus showing another embodiment of the present invention.
도 3a,도 3b,도 3c,도 3d는 본 발명의 솔더볼 구조를 보인 단면도.Figure 3a, Figure 3b, Figure 3c, Figure 3d is a cross-sectional view showing a solder ball structure of the present invention.
도 4는 일반적인 BGA 반도체 패키지의 내부 구조를 보인 단면도.Figure 4 is a cross-sectional view showing the internal structure of a typical BGA semiconductor package.
*도면의주요부분에대한부호의설명** Explanation of symbols on the main parts of the drawings *
S:솔더볼S: Solder Ball
1,10:도금조1,10: Plating tank
1A,10A:도금액1A, 10A: Plating solution
2:작동채2: working sleeve
3,30:전원부3,30: power supply
3A,31:(-)전극 3B,32:(+)전극3A, 31: (-) electrode 3B, 32: (+) electrode
20:드럼20: drum
21:개방부 22:걸림턱21: Opening part 22: Jam jaw
23:회전축23: rotating shaft
100:구100: Old
101A,120,130,140:코팅막 111,123,133,144:주석101A, 120, 130, 140: Coating film 111, 123, 133, 144: Tin
121,142:구리 122,132,143:솔더121,142: Copper 122,132,143: Solder
131,141:은131,141: Silver
이하 첨부된 도면을 참조로 하여 본 발명의 솔더볼 도금방법을 상세히 설명한다.Hereinafter, the solder ball plating method of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 의한 솔더볼의 도금방법은 크게 습식방식과 건성방식으로 대분되고, 상기 습식방식은 다시 전기도금방법과 화학방법으로 분류되며, 건성방식의 대표적인 것은 진공증착방법이 있다.The plating method of the solder ball according to the present invention is largely divided into a wet method and a dry method, and the wet method is further classified into an electroplating method and a chemical method, and a representative method of the dry method is a vacuum deposition method.
제1 실시예First embodiment
이는 도 1에 도시된 바와같이 전기도금방법으로서, 도금조(1)의 도금액(1A)에 잠긴 상태로 설치된 작동채(2)에 솔더볼의 모재가 되는 다수의 구(100)를 투입한다. 그 후, (-)전극(3A)은 상기 작동채(2)에 연결되고 (+)전극(3B)은 도금조(1)의 도금액(1A)에 연결된 전원부(3)를 작동시켜 상기 (-)전극(3A)과 (+)전극(3B)에 각각 전원을 인가시킨다. 그런 다음 작동채(2)를 기계적인 작동에 의해서 요동시키게 되면, 상기 작동채(2)에 투입된 구(100)와 도금액(1A)이 서로 반응하여 구(100) 표면에 도 3a에 도시된 바와같이 코팅막(100A)이 형성되는데, 이때 상기 도금액(1A)은 63%~100%(실제로 99.9%)의 함량을 갖는 순수 주석이다.This is an electroplating method, as shown in Figure 1, injecting a plurality of spheres 100 as the base material of the solder ball to the operating medium (2) installed in the state locked in the plating solution (1A) of the plating bath (1). Thereafter, the (-) electrode 3A is connected to the working chamber 2 and the (+) electrode 3B operates the power supply unit 3 connected to the plating solution 1A of the plating bath 1 to operate the (-) electrode. Power is applied to the electrode 3A and the positive electrode 3B, respectively. Then, when the operating member 2 is oscillated by mechanical operation, the sphere 100 and the plating liquid 1A injected into the operating cylinder 2 react with each other, as shown in FIG. 3A on the surface of the sphere 100. As described above, the coating film 100A is formed, wherein the plating solution 1A is pure tin having a content of 63% to 100% (actually 99.9%).
한편, 상기한 바와같은 장치를 다수 구비하여 도금액(1A)의 성분을 달리하여 순차적으로 도금공정을 수행하면 도 3b,도 3c,도 3d에 도시된 바와같이 다층막으로 된 코팅된 솔더볼의 제조가 이루어진다. 즉, 상기 도금액(1A)의 성분이 구리인 장치와, 도금액(1A)의 성분이 은 또는 솔더 및 구리인 장치를 다수 구비하여 순차적으로 도금 공정을 수행하면 도 3b 내지 도 3d에 도시된 바와같은 다층의 코팅막(120)(130)(140)을 갖는 솔더볼(S)이 형성되는 것이다.On the other hand, if the plating process is sequentially performed by varying the components of the plating solution 1A with a plurality of devices as described above, as shown in FIGS. 3B, 3C, and 3D, a coated solder ball made of a multilayer film is produced. . That is, when a plating process is sequentially performed with a plurality of devices in which the component of the plating liquid 1A is copper and a device in which the component of the plating liquid 1A is silver, solder, and copper are sequentially formed, as shown in FIGS. 3B to 3D. Solder balls (S) having a multi-layer coating film (120, 130, 140) is formed.
도 3b는 납 27%와 주석 63% 합금으로 된 구(100) 표면에 구리층(121)을 형성하고, 그 위에 주석이 63% 이상 함유된 솔더층(122)을 형성하며, 다시 상기 솔더층(122) 위에 63%이상의 함유량을 갖는 순수 주석층(123)을 형성하여 코팅막(120)을 이룬다.FIG. 3B shows a copper layer 121 formed on a surface of a sphere 100 made of a 27% lead and 63% tin alloy, and a solder layer 122 containing 63% or more of tin is formed thereon. A pure tin layer 123 having a content of 63% or more is formed on the 122 to form a coating film 120.
또한 도 3c는 납 27%와 주석 63% 합금으로 된 구(100) 표면에 은으로 된 실버층(131)을 형성하고, 그 위에 주석이 63% 이상 함유된 솔더층(132)을 형성하며, 다시 상기 솔더층(132) 위에 63% 이상의 함유량을 갖는 순수 주석층(133)을 형성하여 코팅막(130)을 이룬다.In addition, Figure 3c forms a silver layer 131 of silver on the surface of the sphere 100 made of a 27% lead and 63% tin alloy, and forms a solder layer 132 containing 63% or more of tin thereon, again. A pure tin layer 133 having a content of 63% or more is formed on the solder layer 132 to form a coating film 130.
그리고 도 3d는 납 27%와 주석 63% 합금으로 된 구(100) 표면에 은으로 된 실버층(141)을 형성하고, 그 위에 구리층(142)을 형성하며, 상기 구리층(142) 위에 주석이 63% 이상 함유된 솔더층(143)과 순수 주석층(144)을 순차적으로 형성하여코팅막(140)을 이룬다.3D shows a silver layer 141 made of silver on a surface of a sphere 100 made of a 27% lead and 63% tin alloy, a copper layer 142 formed thereon, and a tin layer formed on the copper layer 142. The solder layer 143 and the pure tin layer 144 containing 63% or more are sequentially formed to form the coating layer 140.
여기서 구리 및 실버층은 전도율이 우수한 자체 특성과 함께 보강력을 가지며, 솔더층은 패키지 제조공정시 융착에 의한 부착력을 향상시켜 작업이 보다 용이하게 이루어질 수 있도록 하고, 주석층은 외부 공기 접촉에 의한 산화 및 부식과 솔더볼 상호 간의 마찰에 의한 변색을 방지하는 역할을 가진다.Here, the copper and silver layers have reinforcement along with their excellent conductivity, and the solder layer improves adhesion by fusion during the package manufacturing process, so that the work can be made more easily, and the tin layer is oxidized by external air contact. And preventing discoloration due to corrosion and friction between the solder balls.
제2 실시예Second embodiment
이 또한 제1실시예와 같은 전기도금방법으로서, 우선 도 2에 도시된 바와같은 장치가 구비되는 것으로, 이는 도금액(10A)이 담겨진 도금조(10)에 양측이 개방되고, 이 개방부(21)에 내향 돌출되게 걸림턱(22)이 형성된 원통형의 드럼(20)이 횡방향으로 일부가 도금액(1A)에 잠긴 상태로 설치된다. 또한 상기 드럼(20)의 양측에는 회전축(23)이 설치되어 구동모터(미도시됨)의 구동력으로 드럼(20)을 회전시킬 수 있도록 구성된다. 그리고 상기 드럼(20)의 외부에는 전원부(30)가 형성되며, 드럼(20)의 내부에는 코일스프링 또는 그물망 형태로 상기 전원부(30)의 (-)전극(31)이 형성되고, 전원부(30)의 (+)전극(32)은 도금조(1)에 도금액(1A)에 연결된다.In addition, as the electroplating method as in the first embodiment, first, the apparatus as shown in FIG. 2 is provided, which is open at both sides to the plating bath 10 in which the plating liquid 10A is contained, and the opening 21 The cylindrical drum 20 in which the locking step 22 is formed to protrude inwardly is installed in a state in which a part of the cylindrical drum 20 is immersed in the plating liquid 1A. In addition, the rotating shaft 23 is installed on both sides of the drum 20 is configured to rotate the drum 20 by the driving force of the drive motor (not shown). In addition, a power supply unit 30 is formed outside the drum 20, and a negative electrode 31 of the power supply unit 30 is formed in a coil spring or a mesh form inside the drum 20, and a power supply unit 30 is formed. The positive electrode 32 of) is connected to the plating liquid 1A in the plating bath 1.
이러한 도금장치에 있어, 본 발명은 먼저, 드럼(20) 내부에 납 27%와 주석 63% 함량을 갖는 합금으로 된 다수의 솔더볼, 즉 구(100)를 투입한다. 그런 다음 전원부(30)를 작동시켜 드럼(20) 내부의 (-)전극(31)과 도금액(10A)의 (+)전극(32)에 전원을 인가시키면서 드럼(20)을 구동모터(미도시됨)의 구동력으로 회전시키게 되면, 상기 드럼(20) 내의 0.5mm 이하의 직경, 즉 0.35mm의 미세직경을 갖는 구(100)와 도금액(1A)이 서로 반응하여 상기 구(100) 표면에 도 3a에 도시된 바와 같이 코팅막(100A)이 형성되는데, 이때 상기 코팅막(100A)은 63% 이상의 함량을 갖는 순수 주석(111)으로 이루어진다.In this plating apparatus, the present invention first, a plurality of solder balls, that is, spheres 100 made of an alloy having a content of 27% lead and 63% tin in the drum 20 is introduced. Then, the power supply 30 is operated to drive the drum 20 while applying power to the negative electrode 31 of the drum 20 and the positive electrode 32 of the plating solution 10A. When rotated with a driving force of the), the sphere 100 and the plating liquid 1A having a diameter of 0.5 mm or less, that is, a fine diameter of 0.35 mm in the drum 20 react with each other to reach the surface of the sphere 100. As shown in 3a, a coating film 100A is formed, wherein the coating film 100A is made of pure tin 111 having a content of 63% or more.
이또한 제1실시예와 마찬가지로 도금액 별로 다수의 장치를 마련하여 순차적인 도금 공정을 수행하게 되면, 도 3b 내지 도 3d에 도시된 바와같은 다층의 코팅막(120)(130)(140)을 갖는 솔더볼(S)이 제작되는 것이다.In addition, as in the first embodiment, when a plurality of devices are provided for each plating solution to perform a sequential plating process, a solder ball having multiple coating layers 120, 130, and 140 as illustrated in FIGS. 3B to 3D is performed. (S) is produced.
제3 실시예Third embodiment
이는 진공증착방법으로서, 반응가스가 주입된 진공챔버 내에 피도금체로써 솔더볼(S)의 모재인 구(100)를 수용시키고, 이의 하부측에는 63% 이상의 함량을 갖는 주석 또는 구리 및 은의 도금물질을 선택적으로 수용시키며, 구를 (-)전극으로 하고 도금물질을 (+)전극으로 한 전원부의 작동에 의한 (+)전극 및 (-)전극의 전원 인가로 상호 반응토록 함으로써 도 3a 내지 도 3d에 도시된 바와같이 구(100) 표면에 코팅막(100A)(120)(130)(140)이 형성되도록 구성한 것이다.This is a vacuum deposition method, in which a sphere 100, which is the base material of the solder ball S, is accommodated in a vacuum chamber into which a reaction gas is injected, and a plating material of tin or copper and silver having a content of 63% or more is provided on the lower side thereof. 3A to 3D by selectively accommodating and mutually reacting by applying power of the (+) electrode and the (-) electrode by operation of a power supply unit having a sphere as a (-) electrode and a plating material as a (+) electrode. As shown, the coating film 100A, 120, 130, 140 is formed on the surface of the sphere 100.
제4 실시예Fourth embodiment
이는 화학적 이온교환법으로서, 어떤 물질을 이온화 경향이 큰 상대물질과 마찰을 일으키면, 이의 마찰로 인해 이온화 경향이 큰 상대물질의 이온이 그 물질의 표면으로 옮겨 붙음으로써 도금이 이루어지도록 하는 방법으로, 여기서 어떤 물질은 솔더볼의 모재인 구이고, 상대물질은 납보다 이온화 경향이 큰 백색분말의 주석 또는 구리 및 은으로 된 도금물질이 된다.This is a chemical ion exchange method in which when a material causes friction with a counterpart having a high ionization tendency, the friction causes the plating of the counterpart having a high ionization tendency to transfer to the surface of the material. Some materials are the bases of solder balls, and the counterparts are white powder tin or copper and silver plating materials that tend to ionize more than lead.
상술한 바와같이 본 발명은 솔더볼의 모재되는 구 표면에 주석의 단층막 또는 구리 및 은, 솔더 등에 의한 다층의 코팅막이 형성되도록 함으로써 전도율이 우수한 구리 및 은 자체의 특성을 살리면서 패키지 제조공정중 솔더볼 상호간의 접촉에 의한 마찰 및 충격으로 그 형태가 변색 및 변형되는 것을 방지할 수 있을 뿐만 아니라 공기접촉에 의한 산화 및 부식을 방지할 수 있다. 또한 이로인해 반도체 패키지 제조의 불량률을 감소와 함께 작업의 간편성 및 효율성을 한층 증대시킬 수 있는 효과를 갖게 된다. 그리고 0.5mm 이하의 미세 직경을 갖는 솔더볼의 도금이 보다 균일하게 이루어짐으로써 제품의 품질 향상을 기할 수 있는 효과를 갖게 된다.As described above, the present invention allows a single layer film of tin or a multi-layer coating film made of copper, silver, solder, etc. to be formed on the base surface of the solder ball, thereby maintaining the characteristics of copper and silver itself having excellent conductivity, and solder ball during the package manufacturing process. The friction and impact caused by contact between each other can prevent the form from being discolored and deformed, as well as the oxidation and corrosion caused by air contact. In addition, this has the effect of reducing the defect rate of semiconductor package manufacturing and further increasing the simplicity and efficiency of the operation. And since the plating of the solder ball having a fine diameter of 0.5mm or less is made more uniform, there is an effect that can improve the quality of the product.
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