JPS5864057A - Manufacture of al spot lead frame - Google Patents
Manufacture of al spot lead frameInfo
- Publication number
- JPS5864057A JPS5864057A JP16459881A JP16459881A JPS5864057A JP S5864057 A JPS5864057 A JP S5864057A JP 16459881 A JP16459881 A JP 16459881A JP 16459881 A JP16459881 A JP 16459881A JP S5864057 A JPS5864057 A JP S5864057A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- tape
- continuously
- coated
- prescribed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000004080 punching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 17
- 230000000873 masking effect Effects 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000010019 resist printing Methods 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 9
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 4
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013013 elastic material Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010970 precious metal Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は集積回路（ＩＣ）装置用リードフレームの製造
法に関する。特に近年ますます要求が強いＩＣの小型化
、安価に対処できるＩＣ用リードフレームに関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing lead frames for integrated circuit (IC) devices. In particular, the present invention relates to an IC lead frame that can meet the growing demand for IC miniaturization and low cost.
ｔｃのパッケージについては、特に高信頼性を必要とす
るものについては、低融点ガラスセラミック封止（Ｃｅ
ｒ ＤＬＰ ）が、又低価格品については、プラスチッ
ク封止が夫々用いられている。For tc packages, especially those requiring high reliability, low melting point glass ceramic encapsulation (Ce
r DLP ), and for low-cost products, plastic sealing is used, respectively.
このうち前者の低融点ガラスセラミック封止に用いられ
るリードフレームは第１図に示す如く、鉄・ニッケル合
金テープｌの上にａ２をストライプ状に被覆した、いわ
ゆるアルミストライプテープ３が広く用いられ、その大
半はロール圧延法により、又一部は真空蒸着法により連
°続的に複合テープを作り、それをプレスで打抜くこト
Ｋ 、１．って所要のリードフレームが作られている。Among these, the lead frame used for the former low-melting point glass-ceramic sealing is a so-called aluminum stripe tape 3, which is a striped striped coating of A2 on an iron-nickel alloy tape L, as shown in Fig. 1. Most of the tapes are rolled using a roll method, and some are made using a vacuum deposition method to continuously produce a composite tape, which is then punched out using a press.1. The required lead frame is made.
一方、プラスチック封止に用いられるリードフレームは
、第２図に示す如く、鉄・ニッケル合金又は銅合金テー
プ５をプレス打抜加工又はエツチング法によりリードフ
レームとしたものの上に、金又は銀の如き貴金属を部分
的にメッキ４を施したものが広く用いられている。On the other hand, as shown in Fig. 2, the lead frame used for plastic sealing is a lead frame made of iron-nickel alloy or copper alloy tape 5 by press punching or etching. Partially plated noble metals 4 are widely used.
しかし乍ら、近年ＩＣチップそのものの大型化が進行す
る中で、パッケージそのものの小型化は高密度実装への
要求から避は難く、従来のＤＬＰ（Ｄｕａｌ ｉｎ Ｌ
ｉｎｅ Ｐａｃｋａｇｅ ）は−ツノ限界に来ティる。However, as IC chips themselves have become larger in recent years, miniaturization of packages themselves is inevitable due to the demand for high-density packaging, and conventional DLP (Dual in L)
ine Package) reaches the -horn limit.
こうした中で、パッケージリードをＩＣチップの二方向
のみでなく四方向から取り出すパッケージ方式としてフ
ラット・パッケージやチップ・キャリア型パッケージが
ますます注目されつつある。Under these circumstances, flat packages and chip carrier type packages are attracting more and more attention as packaging methods in which package leads are taken out not only from two directions but from all four directions of an IC chip.
ところで、比較的パッケージコストが安価で、かつ信頼
性が高いことから今後のＩＣパッケージ方式の中で重要
な位置を占めると考えられる低融点ガラス・セラミック
封正方式のフラットパッケージ、やチップキャリア型バ
、ツケージを採用しようとすると、アウターリード部に
Ｍが被覆した部分が不可避的に形成され、これがエレク
トロマイグレーション現象によるリード間ショートや半
田付性の障害要因となるなど品質上の大きな問題となる
。By the way, low-melting point glass/ceramic sealed flat packages and chip carrier-type packages are expected to play an important role in future IC packaging because of their relatively low package cost and high reliability. , when trying to adopt a screw cage, a portion coated with M is inevitably formed on the outer lead portion, which causes major quality problems such as short-circuiting between the leads due to electromigration phenomenon and failure of solderability.
一方、プラスチックパッケージ用の貴金属、メッキリー
ドフレームについては低コスト化のため、省貴金属、更
には脱貴金属化に対する要求が高まりつつある。On the other hand, in order to reduce the cost of precious metals and plated lead frames for plastic packages, there is an increasing demand for reducing precious metals and even eliminating precious metals.
本発明はか−る問題点を有する従来のＩＣ用リードフレ
ームの改良に関するものであり、第８図に示すＡ１スポ
ット７、被覆型ＩＣリードフレーム９を安価に製造する
方法を提供せんとするものである。The present invention relates to an improvement of the conventional IC lead frame having the above-mentioned problems, and aims to provide a method for manufacturing the A1 spot 7 and covered type IC lead frame 9 shown in FIG. 8 at low cost. It is.
本発明の方法は、鉄・ニッケル合金又は銅合金テープ８
の上に真空蒸着、イオンブレーティングあるいはスパッ
タリング法などのＰＶＤ法で片面全面にＭを被覆して複
合テープとした後に、所要のリードフレーム形状に連続
的にプレス打抜加工を施し、これを次に述べる方法で不
要の部分のすを除去することによって連続的にリスポッ
トリードフレームを製造するこζを特徴とする。The method of the present invention uses iron-nickel alloy or copper alloy tape 8
After coating the entire surface of one side with M using a PVD method such as vacuum evaporation, ion blasting, or sputtering, a composite tape is made, which is then continuously press punched into the desired lead frame shape. The present invention is characterized by continuously manufacturing respot lead frames by removing unnecessary portions by the method described in .
打抜加工したリードフレーム上の不要な部分のＭを除去
する方法としては、１つは第５図ｔζ示す如く、エンド
レスベルト２２にリードフレームノヒツチに合わせたゴ
ム等の弾性体２３を設け、溶解槽２１を通過する際に、
Ｍの必要な部分にマスキング用弾性体を押し付けた状態
でＮａＯＨ水溶液中に浸漬し、マスキング部以外の局を
溶解除去した後、水洗槽２５、乾燥炉２６を通して巻取
ドラム２７に巻取る方法である。これによって第３図に
示すリスポットリードフレームを連続的に製造できる。One way to remove unnecessary portions M on the punched lead frame is to provide an elastic body 23 such as rubber on the endless belt 22 to fit the lead frame nozzle, as shown in Fig. 5 tζ. When passing through the dissolution tank 21,
M is immersed in a NaOH aqueous solution with a masking elastic body pressed against the necessary portions, and after dissolving and removing the portions other than the masking portions, the material is passed through a washing tank 25 and a drying oven 26 and wound onto a winding drum 27. be. As a result, the respot lead frame shown in FIG. 3 can be manufactured continuously.
不要のすを除去する他の方法は公知のレジスト印刷を用
いることも可能である。Another method for removing unnecessary dirt may be to use known resist printing.
以下実施例によって説明する。This will be explained below using examples.
実施例
板厚０．１２５−に圧延された４２憾Ｎｉ−Ｆｅ合金テ
ープの片面に第４図に示す如き連続真空装置中で真空度
Ｉ Ｑ ’ Ｔｏｒｒ で連続的に厚さ３μ鶏でＭ
を全面に被覆した。第４図で、１４がサプライ、１５が
テークアツプ、ｌｆｌが駆動ロール、１７が水冷銅ロー
ル、１８が合金テープ、１１がＡ−ｅを溶融する５４＠
、ｌ ２がマスク、１３がプレヒートである。このＭ被
覆テープをプレスにて所要のリードフレーム形状に連続
的に打抜き、加工を行った。そのあと、第５図に示す連
続部分エツチング装置により、所要部分以外の被覆Ｍ層
を除去した。即ち、サプライ１９から送り出されたリー
ドフレーム上のり所要部を弾性体２３でマスキングし、
その間に６０°Ｃに加熱した１５１ＮａＯＨ水溶液中を
浸漬通過させて所要部以外の被覆りを除去し、水洗、乾
燥工程を経て連続的にリスポット鉄・ニッケル合金リー
ドフレームを製造することができた。EXAMPLE One side of a 42 mm Ni-Fe alloy tape rolled to a thickness of 0.125 mm was continuously coated with a 3 μm thick film at a vacuum degree of IQ' Torr in a continuous vacuum apparatus as shown in FIG.
covered the entire surface. In Figure 4, 14 is the supply, 15 is the take-up, lfl is the drive roll, 17 is the water-cooled copper roll, 18 is the alloy tape, and 11 is the melter A-e 54@
, l 2 is a mask, and 13 is a preheat. This M-covered tape was continuously punched and processed into a desired lead frame shape using a press. Thereafter, the covering M layer was removed from the required portions using a continuous partial etching apparatus shown in FIG. That is, the required portions of the lead frame sent out from the supply 19 are masked with the elastic body 23,
During that time, it was immersed in a 151NaOH aqueous solution heated to 60°C to remove the coating other than the required parts, and through a water washing and drying process, it was possible to continuously manufacture a Rispot iron/nickel alloy lead frame. .
上記の製造において第５図のエンドレスベルト２２上に
、１つのマスキングの後次のマスキングに至る間に溶解
液を除去する装置を回転中に付加することによって、ス
ポットＭの位置精度及び表面状態を改善することも可能
、である。In the above manufacturing process, by adding a device to the endless belt 22 shown in FIG. 5 during rotation to remove the solution between one masking and the next masking, the positional accuracy and surface condition of the spot M can be improved. It is possible to improve it.
上述の如く本発明の方法によって、低融点ガラス・セラ
ミック封止型のフラットパッケージＩＣやチップキャリ
ア型ＩＣ及びプラスチック封止型ＩＣに用いられるＭス
ポット被覆リードフレームを連続的にかつ安価に製造す
ることが可能となり、ＩＣパッケージの小型化及び低コ
スト化に多大な効果が得られた。As described above, by the method of the present invention, it is possible to continuously and inexpensively manufacture M-spot coated lead frames used for low melting point glass/ceramic sealed flat package ICs, chip carrier type ICs, and plastic sealed type ICs. This has made it possible to achieve a significant effect in reducing the size and cost of IC packages.
第１図は従来のりストライプテープの外観図、第２図は
従来の貴金属部分メッキテープの外観図、第３図は本発
明の方法にょろりスポットテープの外観図、第４図は本
発明の方法に用いる連続真空蒸着装置の例を示す概念図
、第５図は同じく本発明の方法に用いる装置の１例を示
す概念図である。
１、８．１８； 鉄・ニッケル合金テープ、２；スト
ライプ状Ｍ１３；アルミストライプテープ、４；スポッ
ト貴金属メッキ、５；鉄・ニッケル又は銅合金テープ、
６；貴金属部分メッキテープ、７；スポット状ＡＡ 、
９ ； ＡＡスポットテープ、ｌＯ；真空容器、ｌｌ；
坩堝、１２；マスク、１３；ブレヒート、１４．１９；
サプライ、１５；テークアツプ、１６；駆動ロール、１
７；水冷銅ロール、２０ ； ＮａＯＨ出入口、２１；
溶解槽、２２；エンドレスベルト、２３；弾性体、２４
；プーリ、２５；水洗槽、２６；乾燥炉、２７；巻取ド
ラム。
代理人弁理士 上 代 哲 司
７１図
７２図
７３図
７４図
７５図
９
０Fig. 1 is an external view of a conventional glue stripe tape, Fig. 2 is an external view of a conventional precious metal partially plated tape, Fig. 3 is an external view of the Nyorori spot tape according to the method of the present invention, and Fig. 4 is an external view of the method of the present invention. Fig. 5 is a conceptual diagram showing an example of a continuous vacuum evaporation apparatus used in the method of the present invention. 1, 8.18; Iron/nickel alloy tape, 2; Striped M13; Aluminum stripe tape, 4; Spot precious metal plating, 5; Iron/nickel or copper alloy tape,
6; Precious metal partial plating tape, 7; Spot-like AA,
9; AA spot tape, lO; vacuum container, l;
Crucible, 12; Mask, 13; Breheat, 14.19;
Supply, 15; Take-up, 16; Drive roll, 1
7; water-cooled copper roll, 20; NaOH port, 21;
Dissolving tank, 22; Endless belt, 23; Elastic body, 24
; Pulley, 25; Washing tank, 26; Drying oven, 27; Winding drum. Representative patent attorney Satoshi Tsukasa 71Figure 72Figure 73Figure 74Figure 75Figure 9 0
Claims (1)
的に製造する方法において、基板テープの片面に１〜１
０μ痛の厚さにＭを全面被覆し、該被覆テープをプレス
打抜加工を行い、次の工程で必要部分以外を除去するこ
とを特徴とするりスポットリードフレームの製造法。 （２、特許請求の範囲第（１）項において、Ｍの全面被
覆にＰＶＤ法を用いることを特徴とするリスポットリー
ドフレームの製造法。 （３）特許請求の範囲第（１）項において、打抜加工後
弾性体によって必要部分のみマスキングしっ〜、ＮａＯ
Ｈ水溶液に浸漬してマスキング部以外のＡ！を溶解除去
することを特徴とする。リスポットリードフレームの製
造法。 （４）特許請求の範囲第（１）項において、打抜加工後
の工程をレジスト印刷を用いて不要部分のすを除去する
ことを特徴とするリスポットリードフレームの製造法。[Claims] [1] In a method for continuously manufacturing M-spot tape for IC lead frames, one to one
A method for manufacturing a spot lead frame, which comprises coating the entire surface with M to a thickness of 0 μm, performing press punching on the coated tape, and removing other than necessary portions in the next step. (2. In claim (1), a method for manufacturing a respot lead frame, characterized in that a PVD method is used for the entire surface coating of M. (3) In claim (1), After punching, mask only the necessary parts with an elastic body. NaO
Immersed in H aqueous solution to remove parts other than the masking part A! It is characterized by dissolving and removing. Manufacturing method of Rispot lead frame. (4) A method for manufacturing a respot lead frame according to claim (1), characterized in that the step after punching involves removing unnecessary portions by using resist printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16459881A JPS5864057A (en) | 1981-10-14 | 1981-10-14 | Manufacture of al spot lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16459881A JPS5864057A (en) | 1981-10-14 | 1981-10-14 | Manufacture of al spot lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5864057A true JPS5864057A (en) | 1983-04-16 |
| JPS6248386B2 JPS6248386B2 (en) | 1987-10-13 |
Family
ID=15796215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16459881A Granted JPS5864057A (en) | 1981-10-14 | 1981-10-14 | Manufacture of al spot lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864057A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63167747U (en) * | 1987-04-21 | 1988-11-01 | ||
| JPS63265453A (en) * | 1987-04-22 | 1988-11-01 | Mitsubishi Electric Corp | Manufacture of lead frame for semiconductor use |
-
1981
- 1981-10-14 JP JP16459881A patent/JPS5864057A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63167747U (en) * | 1987-04-21 | 1988-11-01 | ||
| JPS63265453A (en) * | 1987-04-22 | 1988-11-01 | Mitsubishi Electric Corp | Manufacture of lead frame for semiconductor use |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248386B2 (en) | 1987-10-13 |
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