DE69119365D1 - Verfahren zur Analyse von Metallverunreinigungen in dem oberflächigen Oxidfilm eines Halbleitersubstrats - Google Patents

Verfahren zur Analyse von Metallverunreinigungen in dem oberflächigen Oxidfilm eines Halbleitersubstrats

Info

Publication number
DE69119365D1
DE69119365D1 DE69119365T DE69119365T DE69119365D1 DE 69119365 D1 DE69119365 D1 DE 69119365D1 DE 69119365 T DE69119365 T DE 69119365T DE 69119365 T DE69119365 T DE 69119365T DE 69119365 D1 DE69119365 D1 DE 69119365D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
oxide film
metal impurities
surface oxide
analyzing metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119365T
Other languages
English (en)
Other versions
DE69119365T2 (de
Inventor
Juri Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69119365D1 publication Critical patent/DE69119365D1/de
Application granted granted Critical
Publication of DE69119365T2 publication Critical patent/DE69119365T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/20—Metals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Sampling And Sample Adjustment (AREA)
DE69119365T 1990-11-26 1991-11-26 Verfahren zur Analyse von Metallverunreinigungen in dem oberflächigen Oxidfilm eines Halbleitersubstrats Expired - Fee Related DE69119365T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32176390 1990-11-26

Publications (2)

Publication Number Publication Date
DE69119365D1 true DE69119365D1 (de) 1996-06-13
DE69119365T2 DE69119365T2 (de) 1996-11-07

Family

ID=18136172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119365T Expired - Fee Related DE69119365T2 (de) 1990-11-26 1991-11-26 Verfahren zur Analyse von Metallverunreinigungen in dem oberflächigen Oxidfilm eines Halbleitersubstrats

Country Status (7)

Country Link
US (1) US5298860A (de)
EP (1) EP0488149B1 (de)
JP (1) JP3044881B2 (de)
KR (1) KR0163596B1 (de)
DE (1) DE69119365T2 (de)
SG (1) SG45200A1 (de)
TW (1) TW312745B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4305297C2 (de) * 1993-02-20 1998-09-24 Telefunken Microelectron Strukturbeize für Halbleiter und deren Anwendung
JPH07153808A (ja) * 1993-09-24 1995-06-16 Shin Etsu Handotai Co Ltd 結合型基板の結合界面のボロン評価方法
JPH0888259A (ja) * 1994-09-14 1996-04-02 Komatsu Electron Metals Co Ltd 半導体基板評価のための表面処理方法
JP2967398B2 (ja) 1995-09-18 1999-10-25 信越半導体株式会社 シリコンウエーハ内部の不純物分析方法
JPH10178077A (ja) * 1996-12-17 1998-06-30 Nec Corp 半導体基板の定量汚染試料の作製方法
US5943552A (en) * 1997-02-06 1999-08-24 Seh America, Inc. Schottky metal detection method
JP3223869B2 (ja) * 1997-11-17 2001-10-29 日本電気株式会社 不純物濃度の定量方法
US6603119B1 (en) * 2000-05-09 2003-08-05 Agere Systems Inc. Calibration method for quantitative elemental analysis
JP4761179B2 (ja) * 2001-07-19 2011-08-31 信越半導体株式会社 ウェーハ表面に吸着したボロン濃度の測定方法及び環境雰囲気中のボロンレベルの評価方法
US6664120B1 (en) * 2001-12-17 2003-12-16 Cypress Semiconductor Corp. Method and structure for determining a concentration profile of an impurity within a semiconductor layer
KR20030004173A (ko) * 2002-10-31 2003-01-14 (주)뉴크린-탑 속건성 목욕가운
US7319530B1 (en) * 2004-03-29 2008-01-15 National Semiconductor Corporation System and method for measuring germanium concentration for manufacturing control of BiCMOS films
JP2008533742A (ja) * 2005-03-14 2008-08-21 キューシー ソリューションズ， インコーポレイテッド 半導体ウェハ計測の装置および方法
CN101131371B (zh) * 2007-10-08 2010-06-02 苏州阿特斯阳光电力科技有限公司 一种精炼冶金硅的杂质含量检测分析方法
JP2009259960A (ja) * 2008-04-15 2009-11-05 Sumco Corp 半導体基板の重金属検出方法
ITGE20110082A1 (it) * 2011-07-28 2013-01-29 Sirtres S R L Piede di appoggio per stabilizzatori .
US9553160B2 (en) 2013-10-09 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for monitoring impurity in high-K dielectric film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD283311A7 (de) * 1981-11-24 1990-10-10 Sieber,Nina,Dd Verfahren zur herstellung von stabilen mos-anordnungen
US4551674A (en) * 1982-11-12 1985-11-05 At&T Bell Laboratories Noncontacting conductivity type determination and surface state spectroscopy of semiconductor materials
US4598249A (en) * 1984-02-29 1986-07-01 Rca Corporation Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US4827212A (en) * 1988-01-20 1989-05-02 Semitest, Inc. Noninvasive method and apparatus for characterization of semiconductors

Also Published As

Publication number Publication date
EP0488149B1 (de) 1996-05-08
DE69119365T2 (de) 1996-11-07
KR920010284A (ko) 1992-06-26
JP3044881B2 (ja) 2000-05-22
EP0488149A3 (en) 1993-03-17
KR0163596B1 (ko) 1999-05-01
EP0488149A2 (de) 1992-06-03
JPH0541433A (ja) 1993-02-19
SG45200A1 (en) 1998-01-16
TW312745B (de) 1997-08-11
US5298860A (en) 1994-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee