JP2008541426A - エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 - Google Patents

エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 Download PDF

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Publication number
JP2008541426A
JP2008541426A JP2008510018A JP2008510018A JP2008541426A JP 2008541426 A JP2008541426 A JP 2008541426A JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008541426 A JP2008541426 A JP 2008541426A
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JP
Japan
Prior art keywords
acid
composition
water
cleaning
inorganic phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008510018A
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English (en)
Japanese (ja)
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JP2008541426A5 (enExample
Inventor
ショーン・エム・ケイン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials LLC
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of JP2008541426A publication Critical patent/JP2008541426A/ja
Publication of JP2008541426A5 publication Critical patent/JP2008541426A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008510018A 2005-05-06 2006-04-18 エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 Pending JP2008541426A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67853405P 2005-05-06 2005-05-06
PCT/US2006/014466 WO2006121580A2 (en) 2005-05-06 2006-04-18 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Publications (2)

Publication Number Publication Date
JP2008541426A true JP2008541426A (ja) 2008-11-20
JP2008541426A5 JP2008541426A5 (enExample) 2009-06-04

Family

ID=36809154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008510018A Pending JP2008541426A (ja) 2005-05-06 2006-04-18 エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物

Country Status (13)

Country Link
US (1) US7754668B2 (enExample)
EP (1) EP1883863B1 (enExample)
JP (1) JP2008541426A (enExample)
KR (1) KR20080005408A (enExample)
CN (1) CN101171551B (enExample)
BR (1) BRPI0611377A2 (enExample)
CA (1) CA2606849A1 (enExample)
IL (1) IL187121A (enExample)
MY (1) MY144723A (enExample)
NO (1) NO20075670L (enExample)
TW (1) TWI425323B (enExample)
WO (1) WO2006121580A2 (enExample)
ZA (1) ZA200706853B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010518192A (ja) * 2007-02-05 2010-05-27 アルケマ フランス 結晶点を低下させるための添加剤と混合されたジメチルスルホキシド配合物およびこの混合物の使用
KR20230043703A (ko) 2021-09-24 2023-03-31 후지필름 가부시키가이샤 약액, 처리 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090148335A1 (en) * 2007-02-28 2009-06-11 Adair Richard E Process for surface treatment of metals
US20110056516A1 (en) * 2007-02-28 2011-03-10 Adair Richard E Process for surface treatment of metals
CN101373342B (zh) * 2008-10-23 2011-03-02 江阴江化微电子材料股份有限公司 一种酸性剥离液及其制备方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
US20220243150A1 (en) * 2019-06-19 2022-08-04 Versum Materials Us, Llc Cleaning Composition For Semiconductor Substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167703A (ja) * 1997-08-22 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138557A (en) 1961-09-05 1964-06-23 Purex Corp Ltd Composition and process for removal of coatings base on epoxy resins
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP4224652B2 (ja) 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP2000284506A (ja) * 1999-03-31 2000-10-13 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6486108B1 (en) 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US6916772B2 (en) 2001-07-13 2005-07-12 Ekc Technology, Inc. Sulfoxide pyrolid(in)one alkanolamine cleaner composition
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
ES2310677T3 (es) 2002-10-22 2009-01-16 Ekc Technology, Inc. Composiciones acuosas a base de acido fosforico para la limpieza de dispositivos semiconductores.
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
EP1638138A1 (en) * 2003-06-04 2006-03-22 Kao Corporation Removing agent composition and removing/cleaning method using same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167703A (ja) * 1997-08-22 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010518192A (ja) * 2007-02-05 2010-05-27 アルケマ フランス 結晶点を低下させるための添加剤と混合されたジメチルスルホキシド配合物およびこの混合物の使用
KR20230043703A (ko) 2021-09-24 2023-03-31 후지필름 가부시키가이샤 약액, 처리 방법
JP2023046519A (ja) * 2021-09-24 2023-04-05 富士フイルム株式会社 薬液、処理方法
JP7692323B2 (ja) 2021-09-24 2025-06-13 富士フイルム株式会社 薬液、処理方法

Also Published As

Publication number Publication date
WO2006121580A3 (en) 2007-02-15
TW200702942A (en) 2007-01-16
KR20080005408A (ko) 2008-01-11
US20080261846A1 (en) 2008-10-23
EP1883863A2 (en) 2008-02-06
CN101171551A (zh) 2008-04-30
EP1883863B1 (en) 2014-01-22
ZA200706853B (en) 2008-09-25
TWI425323B (zh) 2014-02-01
WO2006121580A2 (en) 2006-11-16
CA2606849A1 (en) 2006-11-16
BRPI0611377A2 (pt) 2010-08-31
US7754668B2 (en) 2010-07-13
NO20075670L (no) 2007-11-06
IL187121A (en) 2013-06-27
MY144723A (en) 2011-10-31
CN101171551B (zh) 2012-12-26
IL187121A0 (en) 2008-02-09

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