NO20075670L - Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist - Google Patents
Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresistInfo
- Publication number
- NO20075670L NO20075670L NO20075670A NO20075670A NO20075670L NO 20075670 L NO20075670 L NO 20075670L NO 20075670 A NO20075670 A NO 20075670A NO 20075670 A NO20075670 A NO 20075670A NO 20075670 L NO20075670 L NO 20075670L
- Authority
- NO
- Norway
- Prior art keywords
- compositions
- cleaning
- substrates
- corrosion
- present
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 9
- 229920002120 photoresistant polymer Polymers 0.000 title 2
- 238000004140 cleaning Methods 0.000 abstract 9
- 239000000758 substrate Substances 0.000 abstract 6
- 238000005260 corrosion Methods 0.000 abstract 4
- 230000007797 corrosion Effects 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 238000004377 microelectronic Methods 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 239000002585 base Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 238000000746 purification Methods 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 230000000536 complexating effect Effects 0.000 abstract 1
- 239000008139 complexing agent Substances 0.000 abstract 1
- -1 for example Substances 0.000 abstract 1
- 239000003349 gelling agent Substances 0.000 abstract 1
- 150000002443 hydroxylamines Chemical class 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67853405P | 2005-05-06 | 2005-05-06 | |
| PCT/US2006/014466 WO2006121580A2 (en) | 2005-05-06 | 2006-04-18 | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20075670L true NO20075670L (no) | 2007-11-06 |
Family
ID=36809154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20075670A NO20075670L (no) | 2005-05-06 | 2007-11-06 | Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7754668B2 (enExample) |
| EP (1) | EP1883863B1 (enExample) |
| JP (1) | JP2008541426A (enExample) |
| KR (1) | KR20080005408A (enExample) |
| CN (1) | CN101171551B (enExample) |
| BR (1) | BRPI0611377A2 (enExample) |
| CA (1) | CA2606849A1 (enExample) |
| IL (1) | IL187121A (enExample) |
| MY (1) | MY144723A (enExample) |
| NO (1) | NO20075670L (enExample) |
| TW (1) | TWI425323B (enExample) |
| WO (1) | WO2006121580A2 (enExample) |
| ZA (1) | ZA200706853B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2912151B1 (fr) * | 2007-02-05 | 2009-05-08 | Arkema France | Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange |
| US20090148335A1 (en) * | 2007-02-28 | 2009-06-11 | Adair Richard E | Process for surface treatment of metals |
| US20110056516A1 (en) * | 2007-02-28 | 2011-03-10 | Adair Richard E | Process for surface treatment of metals |
| CN101373342B (zh) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | 一种酸性剥离液及其制备方法 |
| US20110253171A1 (en) * | 2010-04-15 | 2011-10-20 | John Moore | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication |
| US8921295B2 (en) | 2010-07-23 | 2014-12-30 | American Sterilizer Company | Biodegradable concentrated neutral detergent composition |
| EP3480288A1 (en) * | 2017-11-07 | 2019-05-08 | Henkel AG & Co. KGaA | Fluoride based cleaning composition |
| US20220243150A1 (en) * | 2019-06-19 | 2022-08-04 | Versum Materials Us, Llc | Cleaning Composition For Semiconductor Substrates |
| JP7692323B2 (ja) | 2021-09-24 | 2025-06-13 | 富士フイルム株式会社 | 薬液、処理方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3138557A (en) | 1961-09-05 | 1964-06-23 | Purex Corp Ltd | Composition and process for removal of coatings base on epoxy resins |
| TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| JP3975301B2 (ja) * | 1997-08-22 | 2007-09-12 | 三菱瓦斯化学株式会社 | 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法 |
| JP2000208467A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Gas Chem Co Inc | 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法 |
| JP4224652B2 (ja) | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
| JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| JP2002113431A (ja) * | 2000-10-10 | 2002-04-16 | Tokyo Electron Ltd | 洗浄方法 |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6916772B2 (en) | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| JP2003177556A (ja) * | 2001-12-12 | 2003-06-27 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| RS50930B (sr) * | 2002-06-07 | 2010-08-31 | Avantor Performance Materials Inc. | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače |
| ES2310677T3 (es) | 2002-10-22 | 2009-01-16 | Ekc Technology, Inc. | Composiciones acuosas a base de acido fosforico para la limpieza de dispositivos semiconductores. |
| JP4085262B2 (ja) * | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
| EP1638138A1 (en) * | 2003-06-04 | 2006-03-22 | Kao Corporation | Removing agent composition and removing/cleaning method using same |
-
2006
- 2006-04-18 KR KR1020077025627A patent/KR20080005408A/ko not_active Ceased
- 2006-04-18 EP EP06750494.4A patent/EP1883863B1/en not_active Not-in-force
- 2006-04-18 WO PCT/US2006/014466 patent/WO2006121580A2/en not_active Ceased
- 2006-04-18 US US11/911,346 patent/US7754668B2/en not_active Expired - Fee Related
- 2006-04-18 JP JP2008510018A patent/JP2008541426A/ja active Pending
- 2006-04-18 BR BRPI0611377-0A patent/BRPI0611377A2/pt not_active IP Right Cessation
- 2006-04-18 CA CA002606849A patent/CA2606849A1/en not_active Abandoned
- 2006-04-18 CN CN2006800155059A patent/CN101171551B/zh active Active
- 2006-05-03 MY MYPI20062030A patent/MY144723A/en unknown
- 2006-05-03 TW TW095115752A patent/TWI425323B/zh active
-
2007
- 2007-08-16 ZA ZA200706853A patent/ZA200706853B/xx unknown
- 2007-11-01 IL IL187121A patent/IL187121A/en not_active IP Right Cessation
- 2007-11-06 NO NO20075670A patent/NO20075670L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006121580A3 (en) | 2007-02-15 |
| TW200702942A (en) | 2007-01-16 |
| KR20080005408A (ko) | 2008-01-11 |
| US20080261846A1 (en) | 2008-10-23 |
| EP1883863A2 (en) | 2008-02-06 |
| CN101171551A (zh) | 2008-04-30 |
| EP1883863B1 (en) | 2014-01-22 |
| ZA200706853B (en) | 2008-09-25 |
| TWI425323B (zh) | 2014-02-01 |
| WO2006121580A2 (en) | 2006-11-16 |
| CA2606849A1 (en) | 2006-11-16 |
| BRPI0611377A2 (pt) | 2010-08-31 |
| US7754668B2 (en) | 2010-07-13 |
| IL187121A (en) | 2013-06-27 |
| JP2008541426A (ja) | 2008-11-20 |
| MY144723A (en) | 2011-10-31 |
| CN101171551B (zh) | 2012-12-26 |
| IL187121A0 (en) | 2008-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |