NO20075670L - Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist - Google Patents

Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist

Info

Publication number
NO20075670L
NO20075670L NO20075670A NO20075670A NO20075670L NO 20075670 L NO20075670 L NO 20075670L NO 20075670 A NO20075670 A NO 20075670A NO 20075670 A NO20075670 A NO 20075670A NO 20075670 L NO20075670 L NO 20075670L
Authority
NO
Norway
Prior art keywords
compositions
cleaning
substrates
corrosion
present
Prior art date
Application number
NO20075670A
Other languages
English (en)
Norwegian (no)
Inventor
Sean Michael Kane
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of NO20075670L publication Critical patent/NO20075670L/no

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NO20075670A 2005-05-06 2007-11-06 Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist NO20075670L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67853405P 2005-05-06 2005-05-06
PCT/US2006/014466 WO2006121580A2 (en) 2005-05-06 2006-04-18 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Publications (1)

Publication Number Publication Date
NO20075670L true NO20075670L (no) 2007-11-06

Family

ID=36809154

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075670A NO20075670L (no) 2005-05-06 2007-11-06 Sammensetninger for fjernelse av etse- og askedannende fotoresistrester og bulk fotoresist

Country Status (13)

Country Link
US (1) US7754668B2 (enExample)
EP (1) EP1883863B1 (enExample)
JP (1) JP2008541426A (enExample)
KR (1) KR20080005408A (enExample)
CN (1) CN101171551B (enExample)
BR (1) BRPI0611377A2 (enExample)
CA (1) CA2606849A1 (enExample)
IL (1) IL187121A (enExample)
MY (1) MY144723A (enExample)
NO (1) NO20075670L (enExample)
TW (1) TWI425323B (enExample)
WO (1) WO2006121580A2 (enExample)
ZA (1) ZA200706853B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
US20090148335A1 (en) * 2007-02-28 2009-06-11 Adair Richard E Process for surface treatment of metals
US20110056516A1 (en) * 2007-02-28 2011-03-10 Adair Richard E Process for surface treatment of metals
CN101373342B (zh) * 2008-10-23 2011-03-02 江阴江化微电子材料股份有限公司 一种酸性剥离液及其制备方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물
JP7692323B2 (ja) 2021-09-24 2025-06-13 富士フイルム株式会社 薬液、処理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138557A (en) * 1961-09-05 1964-06-23 Purex Corp Ltd Composition and process for removal of coatings base on epoxy resins
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP3975301B2 (ja) * 1997-08-22 2007-09-12 三菱瓦斯化学株式会社 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP2000284506A (ja) * 1999-03-31 2000-10-13 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
EP1407326A1 (en) * 2001-07-13 2004-04-14 Ekc Technology, Inc. Sulfoxide pyrrolid(in)one alkanolamine stripping and cleaning composition
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
CN102061228B (zh) * 2002-06-07 2013-02-13 安万托特性材料股份有限公司 包含氧化剂和有机溶剂的微电子清洁组合物
JP2006503972A (ja) * 2002-10-22 2006-02-02 イーケーシー テクノロジー，インコーポレイティド 半導体デバイスを洗浄するための水性リン酸組成物
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
US20060293199A1 (en) * 2003-06-04 2006-12-28 Kao Corporation Removing agent composition and removing/cleaning method using same

Also Published As

Publication number Publication date
EP1883863B1 (en) 2014-01-22
CA2606849A1 (en) 2006-11-16
JP2008541426A (ja) 2008-11-20
EP1883863A2 (en) 2008-02-06
WO2006121580A2 (en) 2006-11-16
IL187121A (en) 2013-06-27
ZA200706853B (en) 2008-09-25
US7754668B2 (en) 2010-07-13
IL187121A0 (en) 2008-02-09
MY144723A (en) 2011-10-31
KR20080005408A (ko) 2008-01-11
TWI425323B (zh) 2014-02-01
WO2006121580A3 (en) 2007-02-15
TW200702942A (en) 2007-01-16
CN101171551B (zh) 2012-12-26
CN101171551A (zh) 2008-04-30
US20080261846A1 (en) 2008-10-23
BRPI0611377A2 (pt) 2010-08-31

Similar Documents

Publication Publication Date Title
TW200700938A (en) Composition for removal of residue comprising cationic salts and methods using same
NO20061247L (no) Avstryknings- og rengjoringsblandinger for mikroelektronikk
SG134279A1 (en) Cleaning formulations
MY137363A (en) Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
JP2008509554A5 (enExample)
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
TW200710205A (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
ATE495546T1 (de) Zusammensetzung zum abziehen und reinigen und deren verwendung
EP1688798A3 (en) Aqueous based residue removers comprising fluoride
JP2007510307A (ja) ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物
DE602008000181D1 (de) Reinigungszusammensetzung für Halbleitersubstrate
WO2009124847A1 (fr) Composition aqueuse de traitement inhibitrice de la corrosion et de l'attaque acide sur des surfaces metalliques
TW200732864A (en) Composition for removing residue of a wiring substrate, and washing method thereof
WO2006121580A3 (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
US8338350B2 (en) Gluconic acid containing photoresist cleaning composition for multi-metal device processing
JPH07150197A (ja) 洗浄用溶剤組成物
TW200715074A (en) Aqueous cleaning composition and method for using same
ATE487776T1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
TW200702435A (en) Phosphonic acid-containing formulation for cleaning semiconductor wafer and cleaning method
TW200717633A (en) Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method
JP5263167B2 (ja) 置換ケトン化合物又はその誘導体を含有する防食剤或いは剥離剤、及びその製造方法
KR20150085593A (ko) 전자재료용 세정액 조성물
MY139624A (en) Stripping and cleaning compositions for microelectronics
TW200622038A (en) Solution for the selective removal of metal from aluminum substrates

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application