JP2007116105A5 - - Google Patents
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- Publication number
- JP2007116105A5 JP2007116105A5 JP2006243785A JP2006243785A JP2007116105A5 JP 2007116105 A5 JP2007116105 A5 JP 2007116105A5 JP 2006243785 A JP2006243785 A JP 2006243785A JP 2006243785 A JP2006243785 A JP 2006243785A JP 2007116105 A5 JP2007116105 A5 JP 2007116105A5
- Authority
- JP
- Japan
- Prior art keywords
- weight
- aqueous slurry
- copper
- copper wiring
- polyvinylpyrrolidone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 10
- 229910052802 copper Inorganic materials 0.000 claims 10
- 239000010949 copper Substances 0.000 claims 10
- 239000002002 slurry Substances 0.000 claims 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims 5
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims 5
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000003112 inhibitor Substances 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 3
- 230000003068 static effect Effects 0.000 claims 3
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 239000006061 abrasive grain Substances 0.000 claims 2
- 239000008139 complexing agent Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 239000004254 Ammonium phosphate Substances 0.000 claims 1
- 235000019270 ammonium chloride Nutrition 0.000 claims 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims 1
- 235000019289 ammonium phosphates Nutrition 0.000 claims 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- 239000012964 benzotriazole Substances 0.000 claims 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 claims 1
- 235000019797 dipotassium phosphate Nutrition 0.000 claims 1
- 150000007524 organic acids Chemical class 0.000 claims 1
- 229910000160 potassium phosphate Inorganic materials 0.000 claims 1
- 235000011009 potassium phosphates Nutrition 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71591805P | 2005-09-08 | 2005-09-08 | |
| US60/715,918 | 2005-09-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007116105A JP2007116105A (ja) | 2007-05-10 |
| JP2007116105A5 true JP2007116105A5 (enExample) | 2009-09-10 |
| JP5161448B2 JP5161448B2 (ja) | 2013-03-13 |
Family
ID=37763332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006243785A Active JP5161448B2 (ja) | 2005-09-08 | 2006-09-08 | ポリマーバリヤ除去研磨スラリー |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7785487B2 (enExample) |
| JP (1) | JP5161448B2 (enExample) |
| KR (1) | KR101257115B1 (enExample) |
| CN (1) | CN1927975B (enExample) |
| DE (1) | DE102006041805B4 (enExample) |
| FR (1) | FR2890393B1 (enExample) |
| TW (1) | TWI385226B (enExample) |
Families Citing this family (31)
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| JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法 |
| TW200714697A (en) * | 2005-08-24 | 2007-04-16 | Jsr Corp | Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device |
| JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US8075697B2 (en) * | 2007-02-08 | 2011-12-13 | Fontana Technology | Particle removal method and composition |
| US20080276543A1 (en) * | 2007-05-08 | 2008-11-13 | Thomas Terence M | Alkaline barrier polishing slurry |
| JP5441896B2 (ja) * | 2007-06-08 | 2014-03-12 | テクノ セミケム シーオー．， エルティーディー． | 銅ダマシン工程用化学機械的研磨スラリー組成物 |
| US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
| CN101665663B (zh) * | 2008-09-05 | 2014-03-26 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| US20100159807A1 (en) * | 2008-12-22 | 2010-06-24 | Jinru Bian | Polymeric barrier removal polishing slurry |
| CN101906269A (zh) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | 一种金属化学机械抛光的浆料及其使用方法 |
| US20110318928A1 (en) | 2010-06-24 | 2011-12-29 | Jinru Bian | Polymeric Barrier Removal Polishing Slurry |
| CN102358825B (zh) * | 2011-08-05 | 2013-08-21 | 清华大学 | 一种用于蓝宝石晶片的抛光组合物 |
| US20130045599A1 (en) * | 2011-08-15 | 2013-02-21 | Rohm and Electronic Materials CMP Holdings, Inc. | Method for chemical mechanical polishing copper |
| JP5219008B1 (ja) | 2012-07-24 | 2013-06-26 | メック株式会社 | 銅のマイクロエッチング剤及びその補給液、並びに配線基板の製造方法 |
| US8821215B2 (en) * | 2012-09-07 | 2014-09-02 | Cabot Microelectronics Corporation | Polypyrrolidone polishing composition and method |
| US8545715B1 (en) * | 2012-10-09 | 2013-10-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method |
| CN103773244B (zh) * | 2012-10-17 | 2017-08-11 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
| CN103965788B (zh) * | 2013-01-24 | 2017-10-13 | 安集微电子（上海）有限公司 | 一种碱性抛光液及抛光方法 |
| JP2014216464A (ja) | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
| CN104745089A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 |
| CN104745086A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 |
| JP6612790B2 (ja) * | 2014-06-25 | 2019-11-27 | キャボット マイクロエレクトロニクス コーポレイション | 銅バリアの化学機械研磨組成物 |
| CN107075345B (zh) * | 2014-10-14 | 2019-03-12 | 花王株式会社 | 蓝宝石板用研磨液组合物 |
| CN106916536B (zh) * | 2015-12-25 | 2021-04-20 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
| KR102422952B1 (ko) | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| US11401441B2 (en) | 2017-08-17 | 2022-08-02 | Versum Materials Us, Llc | Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications |
| US10465096B2 (en) | 2017-08-24 | 2019-11-05 | Versum Materials Us, Llc | Metal chemical mechanical planarization (CMP) composition and methods therefore |
| JP7096884B2 (ja) | 2017-10-25 | 2022-07-06 | サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド | 材料除去作業を実施するための組成物及びその形成方法 |
| KR102343435B1 (ko) * | 2018-08-08 | 2021-12-24 | 삼성에스디아이 주식회사 | 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
| US20200277514A1 (en) | 2019-02-28 | 2020-09-03 | Versum Materials Us, Llc | Chemical Mechanical Polishing For Copper And Through Silicon Via Applications |
Family Cites Families (42)
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|---|---|---|---|---|
| US5950645A (en) | 1993-10-20 | 1999-09-14 | Verteq, Inc. | Semiconductor wafer cleaning system |
| US5996594A (en) | 1994-11-30 | 1999-12-07 | Texas Instruments Incorporated | Post-chemical mechanical planarization clean-up process using post-polish scrubbing |
| US20040134873A1 (en) | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US6346741B1 (en) | 1997-11-20 | 2002-02-12 | Advanced Technology Materials, Inc. | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
| US6693035B1 (en) | 1998-10-20 | 2004-02-17 | Rodel Holdings, Inc. | Methods to control film removal rates for improved polishing in metal CMP |
| WO1999064527A1 (en) | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
| US6572449B2 (en) | 1998-10-06 | 2003-06-03 | Rodel Holdings, Inc. | Dewatered CMP polishing compositions and methods for using same |
| US6238592B1 (en) * | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
| US6673757B1 (en) | 2000-03-22 | 2004-01-06 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
| EP1212789A1 (en) * | 1999-07-19 | 2002-06-12 | MEMC Electronic Materials, Inc. | Polishing mixture and process for reducing incorporation of copper into silicon wafers |
| US6443812B1 (en) | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
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| US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6524168B2 (en) | 2000-06-15 | 2003-02-25 | Rodel Holdings, Inc | Composition and method for polishing semiconductors |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| US6936541B2 (en) * | 2000-09-20 | 2005-08-30 | Rohn And Haas Electronic Materials Cmp Holdings, Inc. | Method for planarizing metal interconnects |
| JP2002117670A (ja) | 2000-10-04 | 2002-04-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
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| US20030219982A1 (en) | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
| US6997192B2 (en) | 2002-12-13 | 2006-02-14 | Texas Instruments Incorporated | Control of dissolved gas levels in deionized water |
| US6806193B2 (en) | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
| US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| JP2005142516A (ja) * | 2003-06-11 | 2005-06-02 | Toshiro Doi | 化学機械研磨用スラリー組成物及び化学機械研磨方法 |
| JP4637464B2 (ja) | 2003-07-01 | 2011-02-23 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| US20050104048A1 (en) | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
| JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
| US20050136671A1 (en) | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
| US6971945B2 (en) | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
-
2006
- 2006-08-11 TW TW095129492A patent/TWI385226B/zh active
- 2006-08-15 US US11/504,508 patent/US7785487B2/en active Active
- 2006-09-06 DE DE102006041805.0A patent/DE102006041805B4/de not_active Expired - Fee Related
- 2006-09-07 KR KR1020060086108A patent/KR101257115B1/ko active Active
- 2006-09-07 CN CN2006101517966A patent/CN1927975B/zh active Active
- 2006-09-08 JP JP2006243785A patent/JP5161448B2/ja active Active
- 2006-09-08 FR FR0653627A patent/FR2890393B1/fr not_active Expired - Fee Related
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