JP2009049401A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009049401A5 JP2009049401A5 JP2008196223A JP2008196223A JP2009049401A5 JP 2009049401 A5 JP2009049401 A5 JP 2009049401A5 JP 2008196223 A JP2008196223 A JP 2008196223A JP 2008196223 A JP2008196223 A JP 2008196223A JP 2009049401 A5 JP2009049401 A5 JP 2009049401A5
- Authority
- JP
- Japan
- Prior art keywords
- benzene
- acid
- weight
- aqueous slurry
- copper wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 16
- 239000002002 slurry Substances 0.000 claims 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229960004365 benzoic acid Drugs 0.000 claims 8
- 235000010233 benzoic acid Nutrition 0.000 claims 8
- 229910052802 copper Inorganic materials 0.000 claims 8
- 239000010949 copper Substances 0.000 claims 8
- 125000004432 carbon atom Chemical group C* 0.000 claims 6
- 230000002209 hydrophobic effect Effects 0.000 claims 6
- 238000005498 polishing Methods 0.000 claims 6
- 239000004094 surface-active agent Substances 0.000 claims 6
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 4
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 claims 4
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 claims 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 4
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 125000000129 anionic group Chemical group 0.000 claims 3
- 239000008139 complexing agent Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000003112 inhibitor Substances 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000003068 static effect Effects 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 239000006061 abrasive grain Substances 0.000 claims 2
- QNSOHXTZPUMONC-UHFFFAOYSA-N benzene-1,2,3,4,5-pentacarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O QNSOHXTZPUMONC-UHFFFAOYSA-N 0.000 claims 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- 239000012964 benzotriazole Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/890,108 | 2007-08-03 | ||
| US11/890,108 US20090032765A1 (en) | 2007-08-03 | 2007-08-03 | Selective barrier polishing slurry |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009049401A JP2009049401A (ja) | 2009-03-05 |
| JP2009049401A5 true JP2009049401A5 (enExample) | 2011-09-15 |
| JP5323415B2 JP5323415B2 (ja) | 2013-10-23 |
Family
ID=40330710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008196223A Expired - Fee Related JP5323415B2 (ja) | 2007-08-03 | 2008-07-30 | 選択的バリヤ研磨スラリー |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090032765A1 (enExample) |
| JP (1) | JP5323415B2 (enExample) |
| KR (1) | KR20090014110A (enExample) |
| CN (1) | CN101358108B (enExample) |
| TW (1) | TW200907038A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101712907A (zh) * | 2009-08-26 | 2010-05-26 | 辽阳科隆化学品有限公司 | 一种水溶性硅料切削液的组成和应用组合 |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN102559061A (zh) * | 2010-12-28 | 2012-07-11 | 安集微电子（上海）有限公司 | 含有机酸的硅和铜化学机械平坦化浆料 |
| US8440097B2 (en) * | 2011-03-03 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition |
| EP2502969A1 (en) | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
| CN102199400A (zh) * | 2011-03-25 | 2011-09-28 | 江南大学 | 适用于精细雾化cmp的铜抛光液 |
| JP2013138053A (ja) * | 2011-12-28 | 2013-07-11 | Fujimi Inc | 研磨用組成物 |
| US20140011362A1 (en) * | 2012-07-06 | 2014-01-09 | Basf Se | Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| EP2682441A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| JP6101444B2 (ja) * | 2012-08-01 | 2017-03-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法 |
| CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| CN108588720B (zh) * | 2015-10-19 | 2020-12-08 | 江苏理工学院 | 用于铜基钯镍合金镀层退镀的方法 |
| US10437313B2 (en) * | 2016-06-10 | 2019-10-08 | Apple Inc. | Processor unit efficiency control |
| KR102422952B1 (ko) | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| KR102343435B1 (ko) * | 2018-08-08 | 2021-12-24 | 삼성에스디아이 주식회사 | 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
| WO2020214662A1 (en) * | 2019-04-17 | 2020-10-22 | Cabot Microelectronics Corporation | Surface coated abrasive particles for tungsten buff applications |
| KR102757075B1 (ko) * | 2019-04-24 | 2025-01-21 | 주식회사 이엔에프테크놀로지 | 식각 조성물 및 이를 이용하는 식각 방법 |
| JP7803852B2 (ja) * | 2019-09-24 | 2026-01-21 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 平坦化におけるダイ内不均一性 |
| CN111004579B (zh) * | 2019-11-27 | 2021-08-06 | 河北工业大学 | 用于降低多层铜互连阻挡层cmp缺陷的碱性抛光液及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP2004231748A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| JP2006202892A (ja) * | 2005-01-19 | 2006-08-03 | Jsr Corp | 化学機械研磨方法 |
| US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| TWI385226B (zh) * | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Ｃｍｐ控股公司 | 用於移除聚合物阻障之研磨漿液 |
| US20070131899A1 (en) * | 2005-12-13 | 2007-06-14 | Jinru Bian | Composition for polishing semiconductor layers |
| JP2007194593A (ja) * | 2005-12-20 | 2007-08-02 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
-
2007
- 2007-08-03 US US11/890,108 patent/US20090032765A1/en not_active Abandoned
-
2008
- 2008-07-30 TW TW097128748A patent/TW200907038A/zh unknown
- 2008-07-30 JP JP2008196223A patent/JP5323415B2/ja not_active Expired - Fee Related
- 2008-08-01 KR KR1020080075502A patent/KR20090014110A/ko not_active Ceased
- 2008-08-04 CN CN2008101312927A patent/CN101358108B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009049401A5 (enExample) | ||
| JP2007116105A5 (enExample) | ||
| JP6093846B2 (ja) | コバルト除去のための研磨スラリー | |
| CN101180379A (zh) | 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 | |
| TWI485236B (zh) | 研磨用組成物及使用該研磨用組成物之研磨方法 | |
| CN102140313B (zh) | 一种原位组合磨粒铜抛光组合物 | |
| CN102585706B (zh) | 酸性化学机械抛光组合物 | |
| WO2008132983A1 (ja) | 研磨剤組成物および半導体集積回路装置の製造方法 | |
| JP5869720B2 (ja) | 窒化チタンハードマスク及びエッチ残留物除去 | |
| JP2009543336A5 (enExample) | ||
| TW200535203A (en) | Barrier polishing solution | |
| TW200304944A (en) | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same | |
| WO2004076575A3 (en) | Modular barrier removal polishing slurry | |
| CN1399668A (zh) | 平整表面的组合物及方法 | |
| CN104513627B (zh) | 一种集成电路铜cmp组合物及其制备方法 | |
| WO2012051787A1 (zh) | 一种化学机械抛光液 | |
| CN104745088B (zh) | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 | |
| TWI577765B (zh) | 一種用於矽通孔平坦化的化學機械拋光液 | |
| JP2007092064A (ja) | 研磨用組成物 | |
| WO2006120727A1 (ja) | 銅配線研磨用組成物および半導体集積回路表面の研磨方法 | |
| JP2011082512A5 (enExample) | ||
| JP2001207161A5 (enExample) | ||
| TWI656204B (zh) | 研磨用組成物、該使用方法、及基板之製造方法 | |
| TWI534221B (zh) | TSV barrier layer polishing solution | |
| JP2009505423A5 (enExample) |