JP2009049401A5 - - Google Patents
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- Publication number
- JP2009049401A5 JP2009049401A5 JP2008196223A JP2008196223A JP2009049401A5 JP 2009049401 A5 JP2009049401 A5 JP 2009049401A5 JP 2008196223 A JP2008196223 A JP 2008196223A JP 2008196223 A JP2008196223 A JP 2008196223A JP 2009049401 A5 JP2009049401 A5 JP 2009049401A5
- Authority
- JP
- Japan
- Prior art keywords
- benzene
- acid
- weight
- aqueous slurry
- copper wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 16
- 239000002002 slurry Substances 0.000 claims 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229960004365 benzoic acid Drugs 0.000 claims 8
- 235000010233 benzoic acid Nutrition 0.000 claims 8
- 229910052802 copper Inorganic materials 0.000 claims 8
- 239000010949 copper Substances 0.000 claims 8
- 125000004432 carbon atom Chemical group C* 0.000 claims 6
- 230000002209 hydrophobic effect Effects 0.000 claims 6
- 238000005498 polishing Methods 0.000 claims 6
- 239000004094 surface-active agent Substances 0.000 claims 6
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 4
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 claims 4
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 claims 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 4
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 125000000129 anionic group Chemical group 0.000 claims 3
- 239000008139 complexing agent Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000003112 inhibitor Substances 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000003068 static effect Effects 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 239000006061 abrasive grain Substances 0.000 claims 2
- QNSOHXTZPUMONC-UHFFFAOYSA-N benzene-1,2,3,4,5-pentacarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O QNSOHXTZPUMONC-UHFFFAOYSA-N 0.000 claims 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- 239000012964 benzotriazole Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/890,108 US20090032765A1 (en) | 2007-08-03 | 2007-08-03 | Selective barrier polishing slurry |
| US11/890,108 | 2007-08-03 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009049401A JP2009049401A (ja) | 2009-03-05 |
| JP2009049401A5 true JP2009049401A5 (enExample) | 2011-09-15 |
| JP5323415B2 JP5323415B2 (ja) | 2013-10-23 |
Family
ID=40330710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008196223A Expired - Fee Related JP5323415B2 (ja) | 2007-08-03 | 2008-07-30 | 選択的バリヤ研磨スラリー |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090032765A1 (enExample) |
| JP (1) | JP5323415B2 (enExample) |
| KR (1) | KR20090014110A (enExample) |
| CN (1) | CN101358108B (enExample) |
| TW (1) | TW200907038A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101712907A (zh) * | 2009-08-26 | 2010-05-26 | 辽阳科隆化学品有限公司 | 一种水溶性硅料切削液的组成和应用组合 |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN102559061A (zh) * | 2010-12-28 | 2012-07-11 | 安集微电子（上海）有限公司 | 含有机酸的硅和铜化学机械平坦化浆料 |
| US8440097B2 (en) * | 2011-03-03 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition |
| EP2502969A1 (en) * | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
| CN102199400A (zh) * | 2011-03-25 | 2011-09-28 | 江南大学 | 适用于精细雾化cmp的铜抛光液 |
| JP2013138053A (ja) * | 2011-12-28 | 2013-07-11 | Fujimi Inc | 研磨用組成物 |
| EP2682441A1 (en) | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| US20140011362A1 (en) * | 2012-07-06 | 2014-01-09 | Basf Se | Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| JP6101444B2 (ja) * | 2012-08-01 | 2017-03-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法 |
| CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| CN108588720B (zh) * | 2015-10-19 | 2020-12-08 | 江苏理工学院 | 用于铜基钯镍合金镀层退镀的方法 |
| US10437313B2 (en) * | 2016-06-10 | 2019-10-08 | Apple Inc. | Processor unit efficiency control |
| KR102422952B1 (ko) | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| KR102343435B1 (ko) * | 2018-08-08 | 2021-12-24 | 삼성에스디아이 주식회사 | 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
| TWI875753B (zh) * | 2019-04-17 | 2025-03-11 | 美商Ｃｍｃ材料有限責任公司 | 用於鎢擦光應用之表面塗覆研磨顆粒 |
| KR102757075B1 (ko) * | 2019-04-24 | 2025-01-21 | 주식회사 이엔에프테크놀로지 | 식각 조성물 및 이를 이용하는 식각 방법 |
| KR20220066937A (ko) * | 2019-09-24 | 2022-05-24 | 버슘머트리얼즈 유에스, 엘엘씨 | 평탄화에 있어서 위드-인 다이 불균일성(wid-nu) |
| CN111004579B (zh) * | 2019-11-27 | 2021-08-06 | 河北工业大学 | 用于降低多层铜互连阻挡层cmp缺陷的碱性抛光液及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP2004231748A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| JP2006202892A (ja) * | 2005-01-19 | 2006-08-03 | Jsr Corp | 化学機械研磨方法 |
| US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| TWI385226B (zh) * | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Ｃｍｐ控股公司 | 用於移除聚合物阻障之研磨漿液 |
| US20070131899A1 (en) * | 2005-12-13 | 2007-06-14 | Jinru Bian | Composition for polishing semiconductor layers |
| JP2007194593A (ja) * | 2005-12-20 | 2007-08-02 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
-
2007
- 2007-08-03 US US11/890,108 patent/US20090032765A1/en not_active Abandoned
-
2008
- 2008-07-30 TW TW097128748A patent/TW200907038A/zh unknown
- 2008-07-30 JP JP2008196223A patent/JP5323415B2/ja not_active Expired - Fee Related
- 2008-08-01 KR KR1020080075502A patent/KR20090014110A/ko not_active Ceased
- 2008-08-04 CN CN2008101312927A patent/CN101358108B/zh not_active Expired - Fee Related
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