JP5323415B2 - 選択的バリヤ研磨スラリー - Google Patents

選択的バリヤ研磨スラリー Download PDF

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Publication number
JP5323415B2
JP5323415B2 JP2008196223A JP2008196223A JP5323415B2 JP 5323415 B2 JP5323415 B2 JP 5323415B2 JP 2008196223 A JP2008196223 A JP 2008196223A JP 2008196223 A JP2008196223 A JP 2008196223A JP 5323415 B2 JP5323415 B2 JP 5323415B2
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JP
Japan
Prior art keywords
weight
acid
copper wiring
hydrophilic portion
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008196223A
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English (en)
Japanese (ja)
Other versions
JP2009049401A (ja
JP2009049401A5 (enExample
Inventor
チャンチ・イェ
チンル・ビアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2009049401A publication Critical patent/JP2009049401A/ja
Publication of JP2009049401A5 publication Critical patent/JP2009049401A5/ja
Application granted granted Critical
Publication of JP5323415B2 publication Critical patent/JP5323415B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008196223A 2007-08-03 2008-07-30 選択的バリヤ研磨スラリー Expired - Fee Related JP5323415B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/890,108 2007-08-03
US11/890,108 US20090032765A1 (en) 2007-08-03 2007-08-03 Selective barrier polishing slurry

Publications (3)

Publication Number Publication Date
JP2009049401A JP2009049401A (ja) 2009-03-05
JP2009049401A5 JP2009049401A5 (enExample) 2011-09-15
JP5323415B2 true JP5323415B2 (ja) 2013-10-23

Family

ID=40330710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008196223A Expired - Fee Related JP5323415B2 (ja) 2007-08-03 2008-07-30 選択的バリヤ研磨スラリー

Country Status (5)

Country Link
US (1) US20090032765A1 (enExample)
JP (1) JP5323415B2 (enExample)
KR (1) KR20090014110A (enExample)
CN (1) CN101358108B (enExample)
TW (1) TW200907038A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10711160B2 (en) 2017-06-12 2020-07-14 Samsung Electronics Co., Ltd. Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101712907A (zh) * 2009-08-26 2010-05-26 辽阳科隆化学品有限公司 一种水溶性硅料切削液的组成和应用组合
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
CN102477258B (zh) * 2010-11-26 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
CN102559061A (zh) * 2010-12-28 2012-07-11 安集微电子（上海）有限公司 含有机酸的硅和铜化学机械平坦化浆料
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
EP2502969A1 (en) * 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
CN102199400A (zh) * 2011-03-25 2011-09-28 江南大学 适用于精细雾化cmp的铜抛光液
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
US20140011362A1 (en) * 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
JP6101444B2 (ja) * 2012-08-01 2017-03-22 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN108588719B (zh) * 2015-10-19 2020-12-04 江苏理工学院 用于铜基钯镍合金镀层退镀的退镀液
US10437313B2 (en) * 2016-06-10 2019-10-08 Apple Inc. Processor unit efficiency control
KR102343435B1 (ko) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
WO2020214662A1 (en) * 2019-04-17 2020-10-22 Cabot Microelectronics Corporation Surface coated abrasive particles for tungsten buff applications
KR102757075B1 (ko) * 2019-04-24 2025-01-21 주식회사 이엔에프테크놀로지 식각 조성물 및 이를 이용하는 식각 방법
KR20220066937A (ko) * 2019-09-24 2022-05-24 버슘머트리얼즈 유에스, 엘엘씨 평탄화에 있어서 위드-인 다이 불균일성(wid-nu)
CN111004579B (zh) * 2019-11-27 2021-08-06 河北工业大学 用于降低多层铜互连阻挡层cmp缺陷的碱性抛光液及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2004231748A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
JP2006202892A (ja) * 2005-01-19 2006-08-03 Jsr Corp 化学機械研磨方法
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US20070131899A1 (en) * 2005-12-13 2007-06-14 Jinru Bian Composition for polishing semiconductor layers
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10711160B2 (en) 2017-06-12 2020-07-14 Samsung Electronics Co., Ltd. Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same

Also Published As

Publication number Publication date
KR20090014110A (ko) 2009-02-06
TW200907038A (en) 2009-02-16
JP2009049401A (ja) 2009-03-05
US20090032765A1 (en) 2009-02-05
CN101358108B (zh) 2012-02-01
CN101358108A (zh) 2009-02-04

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