JP2009543336A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009543336A5 JP2009543336A5 JP2009518144A JP2009518144A JP2009543336A5 JP 2009543336 A5 JP2009543336 A5 JP 2009543336A5 JP 2009518144 A JP2009518144 A JP 2009518144A JP 2009518144 A JP2009518144 A JP 2009518144A JP 2009543336 A5 JP2009543336 A5 JP 2009543336A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- chemical mechanical
- mechanical polishing
- polishing composition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 17
- 239000000203 mixture Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000000126 substance Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 150000002506 iron compounds Chemical class 0.000 claims 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 239000003381 stabilizer Substances 0.000 claims 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical group [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims 2
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 150000001413 amino acids Chemical class 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/478,023 | 2006-06-29 | ||
| US11/478,023 US7294576B1 (en) | 2006-06-29 | 2006-06-29 | Tunable selectivity slurries in CMP applications |
| PCT/US2007/013889 WO2008005160A1 (en) | 2006-06-29 | 2007-06-13 | Tunable selectivity slurries in cmp applications |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014138830A Division JP5986146B2 (ja) | 2006-06-29 | 2014-07-04 | 基板を化学機械的に研磨加工する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009543336A JP2009543336A (ja) | 2009-12-03 |
| JP2009543336A5 true JP2009543336A5 (enExample) | 2010-05-20 |
| JP5642962B2 JP5642962B2 (ja) | 2014-12-17 |
Family
ID=38664578
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009518144A Active JP5642962B2 (ja) | 2006-06-29 | 2007-06-13 | Ｃｍｐ用途における調節可能な選択性スラリー |
| JP2014138830A Expired - Fee Related JP5986146B2 (ja) | 2006-06-29 | 2014-07-04 | 基板を化学機械的に研磨加工する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014138830A Expired - Fee Related JP5986146B2 (ja) | 2006-06-29 | 2014-07-04 | 基板を化学機械的に研磨加工する方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7294576B1 (enExample) |
| EP (1) | EP2038361A4 (enExample) |
| JP (2) | JP5642962B2 (enExample) |
| KR (1) | KR101252895B1 (enExample) |
| CN (1) | CN101479359B (enExample) |
| IL (1) | IL195697A (enExample) |
| MY (1) | MY144326A (enExample) |
| SG (1) | SG173331A1 (enExample) |
| TW (1) | TWI354697B (enExample) |
| WO (1) | WO2008005160A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
| JP5361306B2 (ja) * | 2008-09-19 | 2013-12-04 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
| CN102650059B (zh) * | 2009-06-26 | 2015-04-15 | 中国石油化工股份有限公司 | 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂 |
| JP5460933B1 (ja) * | 2012-03-30 | 2014-04-02 | ニッタ・ハース株式会社 | 研磨組成物 |
| US8778212B2 (en) | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| KR102431971B1 (ko) * | 2014-04-18 | 2022-08-16 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 처리 장치 및 기판 처리 방법 |
| CN104513627B (zh) * | 2014-12-22 | 2017-04-05 | 深圳市力合材料有限公司 | 一种集成电路铜cmp组合物及其制备方法 |
| KR101741707B1 (ko) | 2015-02-27 | 2017-05-30 | 유비머트리얼즈주식회사 | 연마 슬러리 및 이를 이용한 기판 연마 방법 |
| KR101834418B1 (ko) * | 2015-10-02 | 2018-03-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| US9484212B1 (en) | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| KR102543680B1 (ko) * | 2015-12-17 | 2023-06-16 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
| KR102574851B1 (ko) * | 2015-12-17 | 2023-09-06 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
| WO2017147767A1 (en) * | 2016-03-01 | 2017-09-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
| US10727076B2 (en) * | 2018-10-25 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Slurry and manufacturing semiconductor using the slurry |
| WO2020245904A1 (ja) | 2019-06-04 | 2020-12-10 | 昭和電工マテリアルズ株式会社 | 研磨液、分散体、研磨液の製造方法及び研磨方法 |
| CN113004802B (zh) * | 2019-12-20 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN113122141B (zh) * | 2019-12-30 | 2024-08-02 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN111218687B (zh) * | 2020-03-30 | 2022-01-21 | 惠州宇盛机械设备有限公司 | 一种用于精密铜合金工件的化学抛光液 |
| KR102455159B1 (ko) * | 2020-07-17 | 2022-10-18 | 주식회사 케이씨텍 | 금속막 연마용 슬러리 조성물 |
| WO2022024726A1 (ja) * | 2020-07-27 | 2022-02-03 | 山口精研工業株式会社 | 研磨剤組成物、及び研磨剤組成物を用いる研磨方法 |
| KR102531445B1 (ko) * | 2020-10-28 | 2023-05-12 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US5910022A (en) * | 1997-05-22 | 1999-06-08 | Vlsi Technology, Inc. | Method and system for tungsten chemical mechanical polishing for unplanarized dielectric surfaces |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP2003530227A (ja) * | 2000-04-07 | 2003-10-14 | キャボット マイクロエレクトロニクス コーポレイション | 統合化学機械研磨 |
| TW462908B (en) * | 2000-09-25 | 2001-11-11 | United Microelectronics Corp | Chemical mechanical polishing |
| DE10109483A1 (de) | 2001-02-28 | 2002-09-05 | Clariant Gmbh | Oxalkylierungsprodukte hergestellt aus Epoxiden und Aminen und deren Verwendung in Pigmentpräparationen |
| JP2003086548A (ja) * | 2001-06-29 | 2003-03-20 | Hitachi Ltd | 半導体装置の製造方法及びその研磨液 |
| US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030162399A1 (en) * | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
| CN101371339A (zh) | 2003-05-12 | 2009-02-18 | 高级技术材料公司 | 用于步骤ⅱ的铜衬里和其他相关材料的化学机械抛光组合物及其使用方法 |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| JP2006049479A (ja) * | 2004-08-03 | 2006-02-16 | Nitta Haas Inc | 化学的機械研磨方法 |
| US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
-
2006
- 2006-06-29 US US11/478,023 patent/US7294576B1/en active Active
-
2007
- 2007-06-13 EP EP07796076A patent/EP2038361A4/en not_active Ceased
- 2007-06-13 MY MYPI20085322A patent/MY144326A/en unknown
- 2007-06-13 JP JP2009518144A patent/JP5642962B2/ja active Active
- 2007-06-13 WO PCT/US2007/013889 patent/WO2008005160A1/en not_active Ceased
- 2007-06-13 CN CN2007800241788A patent/CN101479359B/zh not_active Expired - Fee Related
- 2007-06-13 SG SG2011047685A patent/SG173331A1/en unknown
- 2007-06-13 KR KR1020087031578A patent/KR101252895B1/ko not_active Expired - Fee Related
- 2007-06-14 TW TW096121498A patent/TWI354697B/zh active
-
2008
- 2008-12-03 IL IL195697A patent/IL195697A/en not_active IP Right Cessation
-
2014
- 2014-07-04 JP JP2014138830A patent/JP5986146B2/ja not_active Expired - Fee Related