JP2004532509A5 - - Google Patents
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- JP2004532509A5 JP2004532509A5 JP2002558441A JP2002558441A JP2004532509A5 JP 2004532509 A5 JP2004532509 A5 JP 2004532509A5 JP 2002558441 A JP2002558441 A JP 2002558441A JP 2002558441 A JP2002558441 A JP 2002558441A JP 2004532509 A5 JP2004532509 A5 JP 2004532509A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- solid catalyst
- metallic
- polishing
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000005498 polishing Methods 0.000 claims description 46
- 239000011949 solid catalyst Substances 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000003054 catalyst Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000005470 impregnation Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 31
- 239000000126 substance Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000012736 aqueous medium Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- -1 potassium ferricyanide Chemical compound 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical class [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000003842 bromide salts Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 150000002690 malonic acid derivatives Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003890 succinate salts Chemical class 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/766,750 US6435947B2 (en) | 1998-05-26 | 2001-01-22 | CMP polishing pad including a solid catalyst |
| PCT/US2002/001210 WO2002057382A2 (en) | 2001-01-22 | 2002-01-16 | A cmp polishing pad including a solid catalyst |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008153373A Division JP2008306194A (ja) | 2001-01-22 | 2008-06-11 | 固体触媒を含むｃｍｐ研磨パッド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004532509A JP2004532509A (ja) | 2004-10-21 |
| JP2004532509A5 true JP2004532509A5 (enExample) | 2005-12-22 |
Family
ID=25077416
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002558441A Withdrawn JP2004532509A (ja) | 2001-01-22 | 2002-01-16 | 固体触媒を含むｃｍｐ研磨パッド |
| JP2008153373A Pending JP2008306194A (ja) | 2001-01-22 | 2008-06-11 | 固体触媒を含むｃｍｐ研磨パッド |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008153373A Pending JP2008306194A (ja) | 2001-01-22 | 2008-06-11 | 固体触媒を含むｃｍｐ研磨パッド |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6435947B2 (enExample) |
| EP (1) | EP1354012A2 (enExample) |
| JP (2) | JP2004532509A (enExample) |
| CN (1) | CN1320610C (enExample) |
| AU (1) | AU2002245273A1 (enExample) |
| WO (1) | WO2002057382A2 (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706383B1 (en) * | 2001-11-27 | 2004-03-16 | Psiloquest, Inc. | Polishing pad support that improves polishing performance and longevity |
| JP2002331451A (ja) * | 2001-05-09 | 2002-11-19 | Nihon Micro Coating Co Ltd | 研磨用発泡シート及びその製造方法 |
| JP2003113370A (ja) * | 2001-07-30 | 2003-04-18 | Toshiba Corp | 化学的機械的研磨用スラリー、半導体装置の製造方法、半導体装置の製造装置、及び化学的機械的研磨用スラリーの取り扱い方法 |
| US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| US7521366B2 (en) * | 2001-12-12 | 2009-04-21 | Lg Display Co., Ltd. | Manufacturing method of electro line for liquid crystal display device |
| KR100447255B1 (ko) * | 2001-12-31 | 2004-09-07 | 주식회사 하이닉스반도체 | 입자 함침층 조성물 및 이를 이용한 연마 패드 |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
| JP3737787B2 (ja) * | 2002-07-16 | 2006-01-25 | 株式会社東芝 | 半導体装置の製造方法 |
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| WO2007103578A1 (en) * | 2006-03-09 | 2007-09-13 | Cabot Microelectronics Corporation | Method of polishing a tungsten carbide surface |
| US8591763B2 (en) * | 2006-03-23 | 2013-11-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
| US7820067B2 (en) * | 2006-03-23 | 2010-10-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
| EP1894900A3 (en) * | 2006-08-28 | 2010-02-24 | Osaka University | Catalyst-aided chemical processing method and apparatus |
| US7683398B2 (en) * | 2007-03-02 | 2010-03-23 | Mitsubishi Electric Corporation | Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof |
| US8047899B2 (en) * | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| KR100928456B1 (ko) * | 2009-06-01 | 2009-11-25 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
| CN103252710B (zh) * | 2013-04-08 | 2016-04-20 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| CN104131286B (zh) * | 2014-07-01 | 2015-10-28 | 安徽宏发节能设备有限公司 | 一种质量稳定抛光效率高的金属抛光液及其制备方法 |
| CN104513627B (zh) * | 2014-12-22 | 2017-04-05 | 深圳市力合材料有限公司 | 一种集成电路铜cmp组合物及其制备方法 |
| JP6475518B2 (ja) * | 2015-03-03 | 2019-02-27 | 株式会社ディスコ | ウエーハの加工方法 |
| TWI664280B (zh) * | 2016-10-11 | 2019-07-01 | Fujifilm Electronic Materials U.S.A., Inc. | 高溫cmp組成物及用於使用其之方法 |
| DE102016122318A1 (de) | 2016-11-21 | 2018-05-24 | Infineon Technologies Ag | Anschlussstruktur eines Leistungshalbleiterbauelements |
| CN108795296A (zh) * | 2017-04-27 | 2018-11-13 | 天津西美科技有限公司 | 纳米二氧化钛抛光液 |
| US11127693B2 (en) * | 2017-08-25 | 2021-09-21 | Infineon Technologies Ag | Barrier for power metallization in semiconductor devices |
| US10304782B2 (en) * | 2017-08-25 | 2019-05-28 | Infineon Technologies Ag | Compressive interlayer having a defined crack-stop edge extension |
| CN109732472A (zh) * | 2017-10-31 | 2019-05-10 | 上海新昇半导体科技有限公司 | 抛光设备及方法 |
| US10734320B2 (en) | 2018-07-30 | 2020-08-04 | Infineon Technologies Austria Ag | Power metallization structure for semiconductor devices |
| US11031321B2 (en) | 2019-03-15 | 2021-06-08 | Infineon Technologies Ag | Semiconductor device having a die pad with a dam-like configuration |
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| KR20240001491A (ko) * | 2022-06-27 | 2024-01-03 | 삼성전자주식회사 | 기판 연마 장치 및 이를 이용한 기판 연마 방법 |
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| CN118143760B (zh) * | 2024-05-11 | 2024-07-05 | 山东天岳先进科技股份有限公司 | 一种金刚石衬底的表面处理方法 |
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| US5866031A (en) | 1996-06-19 | 1999-02-02 | Sematech, Inc. | Slurry formulation for chemical mechanical polishing of metals |
| KR19980019046A (ko) | 1996-08-29 | 1998-06-05 | 고사이 아키오 | 연마용 조성물 및 이의 용도(Abrasive composition and use of the same) |
| KR19980024187A (ko) | 1996-09-03 | 1998-07-06 | 고사이 아키오 | 반도체 기판상의 금속막을 연마하기 위한 연마용 조성물 및 이의 용도 |
| US5783489A (en) | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6022268A (en) * | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
| JPH11207632A (ja) * | 1998-01-21 | 1999-08-03 | Mitsui Kensaku Toishi Kk | ポリシャ及びその製造方法並びに研磨工具 |
| US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
| US6602117B1 (en) * | 2000-08-30 | 2003-08-05 | Micron Technology, Inc. | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
-
2001
- 2001-01-22 US US09/766,750 patent/US6435947B2/en not_active Expired - Lifetime
-
2002
- 2002-01-16 CN CNB028039408A patent/CN1320610C/zh not_active Expired - Fee Related
- 2002-01-16 EP EP02713421A patent/EP1354012A2/en not_active Withdrawn
- 2002-01-16 WO PCT/US2002/001210 patent/WO2002057382A2/en not_active Ceased
- 2002-01-16 JP JP2002558441A patent/JP2004532509A/ja not_active Withdrawn
- 2002-01-16 AU AU2002245273A patent/AU2002245273A1/en not_active Abandoned
-
2008
- 2008-06-11 JP JP2008153373A patent/JP2008306194A/ja active Pending
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