CN1320610C - 含固体催化剂的化学机械抛光的抛光垫 - Google Patents

含固体催化剂的化学机械抛光的抛光垫 Download PDF

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Publication number
CN1320610C
CN1320610C CNB028039408A CN02803940A CN1320610C CN 1320610 C CN1320610 C CN 1320610C CN B028039408 A CNB028039408 A CN B028039408A CN 02803940 A CN02803940 A CN 02803940A CN 1320610 C CN1320610 C CN 1320610C
Authority
CN
China
Prior art keywords
polishing pad
solid catalyst
catalyst
substrate
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028039408A
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English (en)
Chinese (zh)
Other versions
CN1514862A (zh
Inventor
布赖恩·L·米勒
王淑敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN1514862A publication Critical patent/CN1514862A/zh
Application granted granted Critical
Publication of CN1320610C publication Critical patent/CN1320610C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CNB028039408A 2001-01-22 2002-01-16 含固体催化剂的化学机械抛光的抛光垫 Expired - Fee Related CN1320610C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/766,750 2001-01-22
US09/766,750 US6435947B2 (en) 1998-05-26 2001-01-22 CMP polishing pad including a solid catalyst

Publications (2)

Publication Number Publication Date
CN1514862A CN1514862A (zh) 2004-07-21
CN1320610C true CN1320610C (zh) 2007-06-06

Family

ID=25077416

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028039408A Expired - Fee Related CN1320610C (zh) 2001-01-22 2002-01-16 含固体催化剂的化学机械抛光的抛光垫

Country Status (6)

Country Link
US (1) US6435947B2 (enExample)
EP (1) EP1354012A2 (enExample)
JP (2) JP2004532509A (enExample)
CN (1) CN1320610C (enExample)
AU (1) AU2002245273A1 (enExample)
WO (1) WO2002057382A2 (enExample)

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Publication number Priority date Publication date Assignee Title
US8047899B2 (en) 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing

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US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
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KR100928456B1 (ko) * 2009-06-01 2009-11-25 주식회사 동진쎄미켐 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법
CN103252710B (zh) * 2013-04-08 2016-04-20 清华大学 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法
CN104131286B (zh) * 2014-07-01 2015-10-28 安徽宏发节能设备有限公司 一种质量稳定抛光效率高的金属抛光液及其制备方法
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
JP6475518B2 (ja) * 2015-03-03 2019-02-27 株式会社ディスコ ウエーハの加工方法
TWI664280B (zh) * 2016-10-11 2019-07-01 Fujifilm Electronic Materials U.S.A., Inc. 高溫cmp組成物及用於使用其之方法
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CN108795296A (zh) * 2017-04-27 2018-11-13 天津西美科技有限公司 纳米二氧化钛抛光液
US11127693B2 (en) * 2017-08-25 2021-09-21 Infineon Technologies Ag Barrier for power metallization in semiconductor devices
US10304782B2 (en) * 2017-08-25 2019-05-28 Infineon Technologies Ag Compressive interlayer having a defined crack-stop edge extension
CN109732472A (zh) * 2017-10-31 2019-05-10 上海新昇半导体科技有限公司 抛光设备及方法
US10734320B2 (en) 2018-07-30 2020-08-04 Infineon Technologies Austria Ag Power metallization structure for semiconductor devices
US11031321B2 (en) 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
EP4131343A4 (en) * 2020-04-03 2023-05-31 Mitsubishi Electric Corporation Polishing method, and production method for semiconductor substrate
KR20240001491A (ko) * 2022-06-27 2024-01-03 삼성전자주식회사 기판 연마 장치 및 이를 이용한 기판 연마 방법
US20250282022A1 (en) * 2024-03-07 2025-09-11 Wolfspeed, Inc. Two Component Chemical Mechanical Polishing
CN118143760B (zh) * 2024-05-11 2024-07-05 山东天岳先进科技股份有限公司 一种金刚石衬底的表面处理方法

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US8047899B2 (en) 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
CN101352844B (zh) * 2007-07-26 2012-04-25 旺宏电子股份有限公司 用于化学机械抛光的抛光垫及应用其的化学机械抛光方法

Also Published As

Publication number Publication date
JP2004532509A (ja) 2004-10-21
US6435947B2 (en) 2002-08-20
JP2008306194A (ja) 2008-12-18
CN1514862A (zh) 2004-07-21
AU2002245273A1 (en) 2002-07-30
WO2002057382A2 (en) 2002-07-25
EP1354012A2 (en) 2003-10-22
US20010036804A1 (en) 2001-11-01
WO2002057382A3 (en) 2002-10-31

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