CN101180379A - 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 - Google Patents
用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 Download PDFInfo
- Publication number
- CN101180379A CN101180379A CN200680017799.9A CN200680017799A CN101180379A CN 101180379 A CN101180379 A CN 101180379A CN 200680017799 A CN200680017799 A CN 200680017799A CN 101180379 A CN101180379 A CN 101180379A
- Authority
- CN
- China
- Prior art keywords
- acid
- dihydroxyl
- iron
- polishing
- xitix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 226
- 238000005498 polishing Methods 0.000 title claims abstract description 214
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 104
- -1 enol compounds Chemical class 0.000 title claims description 100
- 239000000126 substance Substances 0.000 title abstract description 25
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims abstract description 258
- 150000001875 compounds Chemical class 0.000 claims abstract description 132
- 238000000034 method Methods 0.000 claims abstract description 90
- 239000003082 abrasive agent Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000011668 ascorbic acid Substances 0.000 claims abstract description 62
- 235000010323 ascorbic acid Nutrition 0.000 claims abstract description 61
- 229960005070 ascorbic acid Drugs 0.000 claims abstract description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910001868 water Inorganic materials 0.000 claims abstract description 39
- 150000003254 radicals Chemical class 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 273
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 203
- 229910052742 iron Inorganic materials 0.000 claims description 161
- 239000000463 material Substances 0.000 claims description 102
- 238000012986 modification Methods 0.000 claims description 96
- 230000004048 modification Effects 0.000 claims description 96
- 238000005837 enolization reaction Methods 0.000 claims description 93
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 90
- 239000002253 acid Substances 0.000 claims description 89
- 239000000377 silicon dioxide Substances 0.000 claims description 82
- 239000003352 sequestering agent Substances 0.000 claims description 42
- 229960001866 silicon dioxide Drugs 0.000 claims description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims description 42
- 150000002978 peroxides Chemical class 0.000 claims description 34
- 239000008119 colloidal silica Substances 0.000 claims description 33
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 28
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 27
- 150000002085 enols Chemical class 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052723 transition metal Inorganic materials 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 18
- QAQJMLQRFWZOBN-LAUBAEHRSA-N L-ascorbyl-6-palmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](O)[C@H]1OC(=O)C(O)=C1O QAQJMLQRFWZOBN-LAUBAEHRSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 150000003624 transition metals Chemical class 0.000 claims description 17
- 239000011786 L-ascorbyl-6-palmitate Substances 0.000 claims description 16
- 235000010385 ascorbyl palmitate Nutrition 0.000 claims description 16
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 15
- 150000002148 esters Chemical class 0.000 claims description 15
- 235000014655 lactic acid Nutrition 0.000 claims description 14
- 239000004310 lactic acid Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000004327 boric acid Substances 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 150000007524 organic acids Chemical class 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 12
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 11
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 11
- 239000012028 Fenton's reagent Substances 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 10
- 238000007517 polishing process Methods 0.000 claims description 10
- NGEWQZIDQIYUNV-UHFFFAOYSA-N 2-hydroxy-3-methylbutyric acid Chemical compound CC(C)C(O)C(O)=O NGEWQZIDQIYUNV-UHFFFAOYSA-N 0.000 claims description 8
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical group CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 claims description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 229910000765 intermetallic Inorganic materials 0.000 claims description 7
- IAJILQKETJEXLJ-UHFFFAOYSA-N Galacturonsaeure Natural products O=CC(O)C(O)C(O)C(O)C(O)=O IAJILQKETJEXLJ-UHFFFAOYSA-N 0.000 claims description 6
- 229960002510 mandelic acid Drugs 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- CPJSUEIXXCENMM-UHFFFAOYSA-N phenacetin Chemical compound CCOC1=CC=C(NC(C)=O)C=C1 CPJSUEIXXCENMM-UHFFFAOYSA-N 0.000 claims description 5
- TUNFSRHWOTWDNC-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 claims description 5
- MUCMKTPAZLSKTL-UHFFFAOYSA-N (3RS)-3-hydroxydodecanoic acid Natural products CCCCCCCCCC(O)CC(O)=O MUCMKTPAZLSKTL-UHFFFAOYSA-N 0.000 claims description 4
- AFENDNXGAFYKQO-VKHMYHEASA-N (S)-2-hydroxybutyric acid Chemical compound CC[C@H](O)C(O)=O AFENDNXGAFYKQO-VKHMYHEASA-N 0.000 claims description 4
- YJCJVMMDTBEITC-UHFFFAOYSA-N 10-hydroxycapric acid Chemical compound OCCCCCCCCCC(O)=O YJCJVMMDTBEITC-UHFFFAOYSA-N 0.000 claims description 4
- BWZVCCNYKMEVEX-UHFFFAOYSA-N 2,4,6-Trimethylpyridine Chemical compound CC1=CC(C)=NC(C)=C1 BWZVCCNYKMEVEX-UHFFFAOYSA-N 0.000 claims description 4
- MBIQENSCDNJOIY-UHFFFAOYSA-N 2-hydroxy-2-methylbutyric acid Chemical compound CCC(C)(O)C(O)=O MBIQENSCDNJOIY-UHFFFAOYSA-N 0.000 claims description 4
- LVRFTAZAXQPQHI-UHFFFAOYSA-N 2-hydroxy-4-methylvaleric acid Chemical compound CC(C)CC(O)C(O)=O LVRFTAZAXQPQHI-UHFFFAOYSA-N 0.000 claims description 4
- NYHNVHGFPZAZGA-UHFFFAOYSA-N 2-hydroxyhexanoic acid Chemical compound CCCCC(O)C(O)=O NYHNVHGFPZAZGA-UHFFFAOYSA-N 0.000 claims description 4
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 claims description 4
- VOXXWSYKYCBWHO-UHFFFAOYSA-N 3-phenyllactic acid Chemical compound OC(=O)C(O)CC1=CC=CC=C1 VOXXWSYKYCBWHO-UHFFFAOYSA-N 0.000 claims description 4
- 150000001345 alkine derivatives Chemical class 0.000 claims description 4
- YDZIJQXINJLRLL-UHFFFAOYSA-N alpha-hydroxydodecanoic acid Natural products CCCCCCCCCCC(O)C(O)=O YDZIJQXINJLRLL-UHFFFAOYSA-N 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 4
- 150000002596 lactones Chemical class 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 4
- HXQBZGMVGIDZAJ-UHFFFAOYSA-N o-Hydroxyphenyllactic acid Natural products OC(=O)C(O)CC1=CC=CC=C1O HXQBZGMVGIDZAJ-UHFFFAOYSA-N 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 125000004434 sulfur atom Chemical group 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- CIWBSHSKHKDKBQ-DUZGATOHSA-N D-isoascorbic acid Chemical compound OC[C@@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-DUZGATOHSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- NPTTZSYLTYJCPR-MZJVJLTCSA-N (2r,4s)-2,3,4-trihydroxypentanedioic acid Chemical compound OC(=O)[C@@H](O)C(O)[C@@H](O)C(O)=O NPTTZSYLTYJCPR-MZJVJLTCSA-N 0.000 claims description 2
- AAWZDTNXLSGCEK-LNVDRNJUSA-N (3r,5r)-1,3,4,5-tetrahydroxycyclohexane-1-carboxylic acid Chemical compound O[C@@H]1CC(O)(C(O)=O)C[C@@H](O)C1O AAWZDTNXLSGCEK-LNVDRNJUSA-N 0.000 claims description 2
- LMHJFKYQYDSOQO-SECBINFHSA-N (5r)-5-hydroxydecanoic acid Chemical compound CCCCC[C@@H](O)CCCC(O)=O LMHJFKYQYDSOQO-SECBINFHSA-N 0.000 claims description 2
- NAOLWIGVYRIGTP-UHFFFAOYSA-N 1,3,5-trihydroxyanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(O)=CC(O)=C3C(=O)C2=C1 NAOLWIGVYRIGTP-UHFFFAOYSA-N 0.000 claims description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical class O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 2
- VBSTXRUAXCTZBQ-UHFFFAOYSA-N 1-hexyl-4-phenylpiperazine Chemical compound C1CN(CCCCCC)CCN1C1=CC=CC=C1 VBSTXRUAXCTZBQ-UHFFFAOYSA-N 0.000 claims description 2
- ZDHCZVWCTKTBRY-UHFFFAOYSA-N 12-hydroxylauric acid Chemical compound OCCCCCCCCCCCC(O)=O ZDHCZVWCTKTBRY-UHFFFAOYSA-N 0.000 claims description 2
- UGAGPNKCDRTDHP-UHFFFAOYSA-N 16-hydroxyhexadecanoic acid Chemical compound OCCCCCCCCCCCCCCCC(O)=O UGAGPNKCDRTDHP-UHFFFAOYSA-N 0.000 claims description 2
- WLBZSUDERATLNN-UHFFFAOYSA-N 2,4,4-trihydroxybutanoic acid Chemical compound OC(O)CC(O)C(O)=O WLBZSUDERATLNN-UHFFFAOYSA-N 0.000 claims description 2
- BWSFWXSSALIZAU-UHFFFAOYSA-N 2-(4-chlorophenyl)-2-hydroxyacetic acid Chemical compound OC(=O)C(O)C1=CC=C(Cl)C=C1 BWSFWXSSALIZAU-UHFFFAOYSA-N 0.000 claims description 2
- OIYFAQRHWMVENL-UHFFFAOYSA-N 2-(4-oxopyran-3-yl)acetic acid Chemical compound OC(=O)CC1=COC=CC1=O OIYFAQRHWMVENL-UHFFFAOYSA-N 0.000 claims description 2
- HZLCGUXUOFWCCN-UHFFFAOYSA-N 2-hydroxynonadecane-1,2,3-tricarboxylic acid Chemical compound CCCCCCCCCCCCCCCCC(C(O)=O)C(O)(C(O)=O)CC(O)=O HZLCGUXUOFWCCN-UHFFFAOYSA-N 0.000 claims description 2
- JVGVDSSUAVXRDY-UHFFFAOYSA-N 3-(4-hydroxyphenyl)lactic acid Chemical compound OC(=O)C(O)CC1=CC=C(O)C=C1 JVGVDSSUAVXRDY-UHFFFAOYSA-N 0.000 claims description 2
- KEGHVPSZIWXTPY-UHFFFAOYSA-N 3-hydroxy-3-methylpentanoic acid Chemical compound CCC(C)(O)CC(O)=O KEGHVPSZIWXTPY-UHFFFAOYSA-N 0.000 claims description 2
- QQAVZEYXLCYOKO-UHFFFAOYSA-N 4-Hydroxycapric acid Chemical compound CCCCCCC(O)CCC(O)=O QQAVZEYXLCYOKO-UHFFFAOYSA-N 0.000 claims description 2
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 claims description 2
- 229940006015 4-hydroxybutyric acid Drugs 0.000 claims description 2
- YHXHKYRQLYQUIH-UHFFFAOYSA-N 4-hydroxymandelic acid Chemical compound OC(=O)C(O)C1=CC=C(O)C=C1 YHXHKYRQLYQUIH-UHFFFAOYSA-N 0.000 claims description 2
- KXFJZKUFXHWWAJ-UHFFFAOYSA-N 4-hydroxyphenylglyoxylic acid Chemical compound OC(=O)C(=O)C1=CC=C(O)C=C1 KXFJZKUFXHWWAJ-UHFFFAOYSA-N 0.000 claims description 2
- LITUBCVUXPBCGA-WMZHIEFXSA-N Ascorbyl stearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@H](O)[C@H]1OC(=O)C(O)=C1O LITUBCVUXPBCGA-WMZHIEFXSA-N 0.000 claims description 2
- 239000004261 Ascorbyl stearate Substances 0.000 claims description 2
- AAWZDTNXLSGCEK-UHFFFAOYSA-N Cordycepinsaeure Natural products OC1CC(O)(C(O)=O)CC(O)C1O AAWZDTNXLSGCEK-UHFFFAOYSA-N 0.000 claims description 2
- DSLZVSRJTYRBFB-LLEIAEIESA-N D-glucaric acid Chemical compound OC(=O)[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O DSLZVSRJTYRBFB-LLEIAEIESA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- PHOQVHQSTUBQQK-SQOUGZDYSA-N D-glucono-1,5-lactone Chemical compound OC[C@H]1OC(=O)[C@H](O)[C@@H](O)[C@@H]1O PHOQVHQSTUBQQK-SQOUGZDYSA-N 0.000 claims description 2
- UYUXSRADSPPKRZ-UHFFFAOYSA-N D-glucuronic acid gamma-lactone Natural products O=CC(O)C1OC(=O)C(O)C1O UYUXSRADSPPKRZ-UHFFFAOYSA-N 0.000 claims description 2
- UYUXSRADSPPKRZ-SKNVOMKLSA-N D-glucurono-6,3-lactone Chemical compound O=C[C@H](O)[C@H]1OC(=O)[C@@H](O)[C@H]1O UYUXSRADSPPKRZ-SKNVOMKLSA-N 0.000 claims description 2
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 claims description 2
- QXKAIJAYHKCRRA-BXXZVTAOSA-N D-ribonic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)C(O)=O QXKAIJAYHKCRRA-BXXZVTAOSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-LWMBPPNESA-L D-tartrate(2-) Chemical compound [O-]C(=O)[C@@H](O)[C@H](O)C([O-])=O FEWJPZIEWOKRBE-LWMBPPNESA-L 0.000 claims description 2
- DSLZVSRJTYRBFB-GJPGBQJBSA-N L-altraric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)[C@@H](O)[C@@H](O)C(O)=O DSLZVSRJTYRBFB-GJPGBQJBSA-N 0.000 claims description 2
- SXZYCXMUPBBULW-SKNVOMKLSA-N L-gulono-1,4-lactone Chemical compound OC[C@H](O)[C@H]1OC(=O)[C@@H](O)[C@H]1O SXZYCXMUPBBULW-SKNVOMKLSA-N 0.000 claims description 2
- AAWZDTNXLSGCEK-ZHQZDSKASA-N Quinic acid Natural products O[C@H]1CC(O)(C(O)=O)C[C@H](O)C1O AAWZDTNXLSGCEK-ZHQZDSKASA-N 0.000 claims description 2
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 claims description 2
- JACRWUWPXAESPB-QMMMGPOBSA-N Tropic acid Natural products OC[C@H](C(O)=O)C1=CC=CC=C1 JACRWUWPXAESPB-QMMMGPOBSA-N 0.000 claims description 2
- IAJILQKETJEXLJ-RSJOWCBRSA-N aldehydo-D-galacturonic acid Chemical compound O=C[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)C(O)=O IAJILQKETJEXLJ-RSJOWCBRSA-N 0.000 claims description 2
- IAJILQKETJEXLJ-QTBDOELSSA-N aldehydo-D-glucuronic acid Chemical compound O=C[C@H](O)[C@@H](O)[C@H](O)[C@H](O)C(O)=O IAJILQKETJEXLJ-QTBDOELSSA-N 0.000 claims description 2
- DSLZVSRJTYRBFB-GNSDDBTRSA-N allaric acid Chemical compound OC(=O)[C@@H](O)[C@@H](O)[C@@H](O)[C@@H](O)C(O)=O DSLZVSRJTYRBFB-GNSDDBTRSA-N 0.000 claims description 2
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 claims description 2
- 235000019276 ascorbyl stearate Nutrition 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 2
- XFTRTWQBIOMVPK-UHFFFAOYSA-N citramalic acid Chemical compound OC(=O)C(O)(C)CC(O)=O XFTRTWQBIOMVPK-UHFFFAOYSA-N 0.000 claims description 2
- WTXGYGWMPUGBAL-MGCNEYSASA-N galactonolactone Chemical compound O[C@@H]1COC(=O)[C@H](O)[C@@H](O)[C@H]1O WTXGYGWMPUGBAL-MGCNEYSASA-N 0.000 claims description 2
- 229950006191 gluconic acid Drugs 0.000 claims description 2
- 235000012209 glucono delta-lactone Nutrition 0.000 claims description 2
- 229960003681 gluconolactone Drugs 0.000 claims description 2
- 229950002441 glucurolactone Drugs 0.000 claims description 2
- 229940097043 glucuronic acid Drugs 0.000 claims description 2
- LMHJFKYQYDSOQO-UHFFFAOYSA-N hydroxydecanoic acid Natural products CCCCCC(O)CCCC(O)=O LMHJFKYQYDSOQO-UHFFFAOYSA-N 0.000 claims description 2
- ROBFUDYVXSDBQM-UHFFFAOYSA-N hydroxymalonic acid Chemical compound OC(=O)C(O)C(O)=O ROBFUDYVXSDBQM-UHFFFAOYSA-N 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229960003893 phenacetin Drugs 0.000 claims description 2
- 229920001184 polypeptide Polymers 0.000 claims description 2
- 102000004196 processed proteins & peptides Human genes 0.000 claims description 2
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims description 2
- 229940005605 valeric acid Drugs 0.000 claims description 2
- LXNOENXQFNYMGT-UHFFFAOYSA-N xi-5-Hydroxydodecanoic acid Chemical compound CCCCCCCC(O)CCCC(O)=O LXNOENXQFNYMGT-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 claims 1
- DGQOCLATAPFASR-UHFFFAOYSA-N tetrahydroxy-1,4-benzoquinone Chemical compound OC1=C(O)C(=O)C(O)=C(O)C1=O DGQOCLATAPFASR-UHFFFAOYSA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 128
- 229910052721 tungsten Inorganic materials 0.000 abstract description 71
- 239000010937 tungsten Substances 0.000 abstract description 70
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 67
- 239000007800 oxidant agent Substances 0.000 abstract description 37
- 239000002245 particle Substances 0.000 abstract description 21
- 239000002738 chelating agent Substances 0.000 abstract description 13
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000002585 base Substances 0.000 description 59
- 235000012431 wafers Nutrition 0.000 description 53
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 30
- 238000002360 preparation method Methods 0.000 description 28
- 229910052796 boron Inorganic materials 0.000 description 26
- 230000000694 effects Effects 0.000 description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 24
- 150000003839 salts Chemical class 0.000 description 22
- 229910001428 transition metal ion Inorganic materials 0.000 description 21
- ZDVYABSQRRRIOJ-UHFFFAOYSA-N boron;iron Chemical compound [Fe]#B ZDVYABSQRRRIOJ-UHFFFAOYSA-N 0.000 description 20
- 230000002829 reductive effect Effects 0.000 description 17
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 15
- 239000006061 abrasive grain Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 14
- 230000001590 oxidative effect Effects 0.000 description 14
- 238000002474 experimental method Methods 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 229910052761 rare earth metal Inorganic materials 0.000 description 11
- 230000000536 complexating effect Effects 0.000 description 10
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 230000032683 aging Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 238000011109 contamination Methods 0.000 description 8
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 7
- WKPSFPXMYGFAQW-UHFFFAOYSA-N iron;hydrate Chemical compound O.[Fe] WKPSFPXMYGFAQW-UHFFFAOYSA-N 0.000 description 7
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 150000002632 lipids Chemical class 0.000 description 5
- 235000006408 oxalic acid Nutrition 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 150000000703 Cerium Chemical class 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 125000002877 alkyl aryl group Chemical group 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical compound OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical class C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 229940061720 alpha hydroxy acid Drugs 0.000 description 3
- 150000001280 alpha hydroxy acids Chemical class 0.000 description 3
- 150000004716 alpha keto acids Chemical class 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- GVJHHUAWPYXKBD-UHFFFAOYSA-N d-alpha-tocopherol Natural products OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 3
- 238000002242 deionisation method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 125000003827 glycol group Chemical group 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000003863 metallic catalyst Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- CYFLXLSBHQBMFT-UHFFFAOYSA-N sulfamoxole Chemical group O1C(C)=C(C)N=C1NS(=O)(=O)C1=CC=C(N)C=C1 CYFLXLSBHQBMFT-UHFFFAOYSA-N 0.000 description 3
- 239000006228 supernatant Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 3
- GUXHBMASAHGULD-SEYHBJAFSA-N (4s,4as,5as,6s,12ar)-7-chloro-4-(dimethylamino)-1,6,10,11,12a-pentahydroxy-3,12-dioxo-4a,5,5a,6-tetrahydro-4h-tetracene-2-carboxamide Chemical compound C1([C@H]2O)=C(Cl)C=CC(O)=C1C(O)=C1[C@@H]2C[C@H]2[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]2(O)C1=O GUXHBMASAHGULD-SEYHBJAFSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- KWMLJOLKUYYJFJ-UHFFFAOYSA-N 2,3,4,5,6,7-Hexahydroxyheptanoic acid Chemical compound OCC(O)C(O)C(O)C(O)C(O)C(O)=O KWMLJOLKUYYJFJ-UHFFFAOYSA-N 0.000 description 2
- JPIJQSOTBSSVTP-UHFFFAOYSA-N 2,3,4-trihydroxybutanoic acid Chemical compound OCC(O)C(O)C(O)=O JPIJQSOTBSSVTP-UHFFFAOYSA-N 0.000 description 2
- 102220625006 2-(3-amino-3-carboxypropyl)histidine synthase subunit 1_E10A_mutation Human genes 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 239000004160 Ammonium persulphate Substances 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- KIPLYOUQVMMOHB-MXWBXKMOSA-L [Ca++].CN(C)[C@H]1[C@@H]2[C@@H](O)[C@H]3C(=C([O-])[C@]2(O)C(=O)C(C(N)=O)=C1O)C(=O)c1c(O)cccc1[C@@]3(C)O.CN(C)[C@H]1[C@@H]2[C@@H](O)[C@H]3C(=C([O-])[C@]2(O)C(=O)C(C(N)=O)=C1O)C(=O)c1c(O)cccc1[C@@]3(C)O Chemical compound [Ca++].CN(C)[C@H]1[C@@H]2[C@@H](O)[C@H]3C(=C([O-])[C@]2(O)C(=O)C(C(N)=O)=C1O)C(=O)c1c(O)cccc1[C@@]3(C)O.CN(C)[C@H]1[C@@H]2[C@@H](O)[C@H]3C(=C([O-])[C@]2(O)C(=O)C(C(N)=O)=C1O)C(=O)c1c(O)cccc1[C@@]3(C)O KIPLYOUQVMMOHB-MXWBXKMOSA-L 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 2
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 235000019395 ammonium persulphate Nutrition 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229960002398 demeclocycline Drugs 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-M hexadecanoate Chemical compound CCCCCCCCCCCCCCCC([O-])=O IPCSVZSSVZVIGE-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- QXKAIJAYHKCRRA-UHFFFAOYSA-N l-lyxonate Chemical compound OCC(O)C(O)C(O)C(O)=O QXKAIJAYHKCRRA-UHFFFAOYSA-N 0.000 description 2
- 235000020778 linoleic acid Nutrition 0.000 description 2
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 2
- 229960004488 linolenic acid Drugs 0.000 description 2
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- ZJAOAACCNHFJAH-UHFFFAOYSA-N phosphonoformic acid Chemical compound OC(=O)P(O)(O)=O ZJAOAACCNHFJAH-UHFFFAOYSA-N 0.000 description 2
- 229940107700 pyruvic acid Drugs 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229940063650 terramycin Drugs 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- PFTAWBLQPZVEMU-DZGCQCFKSA-N (+)-catechin Chemical compound C1([C@H]2OC3=CC(O)=CC(O)=C3C[C@@H]2O)=CC=C(O)C(O)=C1 PFTAWBLQPZVEMU-DZGCQCFKSA-N 0.000 description 1
- XIYOPDCBBDCGOE-IWVLMIASSA-N (4s,4ar,5s,5ar,12ar)-4-(dimethylamino)-1,5,10,11,12a-pentahydroxy-6-methylidene-3,12-dioxo-4,4a,5,5a-tetrahydrotetracene-2-carboxamide Chemical compound C=C1C2=CC=CC(O)=C2C(O)=C2[C@@H]1[C@H](O)[C@H]1[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]1(O)C2=O XIYOPDCBBDCGOE-IWVLMIASSA-N 0.000 description 1
- RNIADBXQDMCFEN-IWVLMIASSA-N (4s,4ar,5s,5ar,12ar)-7-chloro-4-(dimethylamino)-1,5,10,11,12a-pentahydroxy-6-methylidene-3,12-dioxo-4,4a,5,5a-tetrahydrotetracene-2-carboxamide Chemical compound C=C1C2=C(Cl)C=CC(O)=C2C(O)=C2[C@@H]1[C@H](O)[C@H]1[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]1(O)C2=O RNIADBXQDMCFEN-IWVLMIASSA-N 0.000 description 1
- SGKRLCUYIXIAHR-AKNGSSGZSA-N (4s,4ar,5s,5ar,6r,12ar)-4-(dimethylamino)-1,5,10,11,12a-pentahydroxy-6-methyl-3,12-dioxo-4a,5,5a,6-tetrahydro-4h-tetracene-2-carboxamide Chemical compound C1=CC=C2[C@H](C)[C@@H]([C@H](O)[C@@H]3[C@](C(O)=C(C(N)=O)C(=O)[C@H]3N(C)C)(O)C3=O)C3=C(O)C2=C1O SGKRLCUYIXIAHR-AKNGSSGZSA-N 0.000 description 1
- WTJXVDPDEQKTCV-VQAITOIOSA-N (4s,4as,5ar,12ar)-4,7-bis(dimethylamino)-1,10,11,12a-tetrahydroxy-3,12-dioxo-4a,5,5a,6-tetrahydro-4h-tetracene-2-carboxamide;hydrochloride Chemical compound Cl.C1C2=C(N(C)C)C=CC(O)=C2C(O)=C2[C@@H]1C[C@H]1[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]1(O)C2=O WTJXVDPDEQKTCV-VQAITOIOSA-N 0.000 description 1
- JXHLSZPLSSDYCF-UHFFFAOYSA-N 1,4-dihydroxy-2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=C(O)C(C)=CC(O)=C3C(=O)C2=C1 JXHLSZPLSSDYCF-UHFFFAOYSA-N 0.000 description 1
- 150000000191 1,4-naphthoquinones Chemical class 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 description 1
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- IMPPGHMHELILKG-UHFFFAOYSA-N 4-ethoxyaniline Chemical compound CCOC1=CC=C(N)C=C1 IMPPGHMHELILKG-UHFFFAOYSA-N 0.000 description 1
- BGVCGTNXEKDVCB-UHFFFAOYSA-N 4-hydroxy-3-methylnaphthalene-1,2-dione Chemical compound C1=CC=C2C(=O)C(=O)C(C)=C(O)C2=C1 BGVCGTNXEKDVCB-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RGCKGOZRHPZPFP-UHFFFAOYSA-N Alizarin Natural products C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 description 1
- NEZONWMXZKDMKF-JTQLQIEISA-N Alkannin Chemical compound C1=CC(O)=C2C(=O)C([C@@H](O)CC=C(C)C)=CC(=O)C2=C1O NEZONWMXZKDMKF-JTQLQIEISA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DSLZVSRJTYRBFB-LDHWTSMMSA-N D-mannaric acid Chemical compound OC(=O)[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)C(O)=O DSLZVSRJTYRBFB-LDHWTSMMSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 150000000996 L-ascorbic acids Chemical class 0.000 description 1
- 241001071917 Lithospermum Species 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 125000003047 N-acetyl group Chemical group 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- LULCPJWUGUVEFU-UHFFFAOYSA-N Phthiocol Natural products C1=CC=C2C(=O)C(C)=C(O)C(=O)C2=C1 LULCPJWUGUVEFU-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229930003427 Vitamin E Natural products 0.000 description 1
- TUYRNAGGIJZRNM-LBHUVFDKSA-N [(2s)-2-[(2r)-4-hexadecanoyloxy-3-hydroxy-5-oxo-2h-furan-2-yl]-2-hydroxyethyl] hexadecanoate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](O)[C@H]1OC(=O)C(OC(=O)CCCCCCCCCCCCCCC)=C1O TUYRNAGGIJZRNM-LBHUVFDKSA-N 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000184 acid digestion Methods 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- HFVAFDPGUJEFBQ-UHFFFAOYSA-M alizarin red S Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=C(S([O-])(=O)=O)C(O)=C2O HFVAFDPGUJEFBQ-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- UNNKKUDWEASWDN-UHFFFAOYSA-N alkannin Natural products CC(=CCC(O)c1cc(O)c2C(=O)C=CC(=O)c2c1O)C UNNKKUDWEASWDN-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 159000000013 aluminium salts Chemical class 0.000 description 1
- 229910000329 aluminium sulfate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000013011 aqueous formulation Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- KAYAJQFSUWUGEN-LEJBHHMKSA-N azanium [(2R)-2-[(1S)-1,2-dihydroxyethyl]-3-hydroxy-5-oxo-2H-furan-4-yl] sulfate Chemical compound [NH4+].OC[C@H](O)[C@H]1OC(=O)C(OS([O-])(=O)=O)=C1O KAYAJQFSUWUGEN-LEJBHHMKSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000000035 biogenic effect Effects 0.000 description 1
- 125000005619 boric acid group Chemical group 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- ADRVNXBAWSRFAJ-UHFFFAOYSA-N catechin Natural products OC1Cc2cc(O)cc(O)c2OC1c3ccc(O)c(O)c3 ADRVNXBAWSRFAJ-UHFFFAOYSA-N 0.000 description 1
- 235000005487 catechin Nutrition 0.000 description 1
- XQTIWNLDFPPCIU-UHFFFAOYSA-N cerium(3+) Chemical class [Ce+3] XQTIWNLDFPPCIU-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- BVQUETZBXIMAFZ-UHFFFAOYSA-N chembl1328567 Chemical compound C1=CC=C2C(=O)C(O)=C(O)C(=O)C2=C1 BVQUETZBXIMAFZ-UHFFFAOYSA-N 0.000 description 1
- CBIBTBSDPZSTOE-UHFFFAOYSA-N chembl155771 Chemical compound C1=CC=C2C(=O)C(CCC(C)C)=C(O)C(=O)C2=C1 CBIBTBSDPZSTOE-UHFFFAOYSA-N 0.000 description 1
- ZFXYVCPRQYVJDR-UHFFFAOYSA-N chembl1987085 Chemical compound C1=CC(O)=C2C(=O)C(O)=CC(=O)C2=C1O ZFXYVCPRQYVJDR-UHFFFAOYSA-N 0.000 description 1
- 229950001002 cianidanol Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- LDMUZIHUOQAIEY-YCWPWOODSA-N diazanium [(2R)-2-[(1S)-1,2-dihydroxyethyl]-3-oxido-5-oxo-2H-furan-4-yl] sulfate Chemical compound S(=O)(=O)([O-])OC=1C(=O)O[C@@H](C1[O-])[C@@H](O)CO.[NH4+].[NH4+] LDMUZIHUOQAIEY-YCWPWOODSA-N 0.000 description 1
- IRDLUHRVLVEUHA-UHFFFAOYSA-N diethyl dithiophosphate Chemical compound CCOP(S)(=S)OCC IRDLUHRVLVEUHA-UHFFFAOYSA-N 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- SSWAPIFTNSBXIS-UHFFFAOYSA-N dioxido(dioxo)tungsten;iron(2+) Chemical compound [Fe+2].[O-][W]([O-])(=O)=O SSWAPIFTNSBXIS-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 229960003722 doxycycline Drugs 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001447 ferric ion Inorganic materials 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229960005102 foscarnet Drugs 0.000 description 1
- LRBQNJMCXXYXIU-QWKBTXIPSA-N gallotannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@H]2[C@@H]([C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-QWKBTXIPSA-N 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KYYWBEYKBLQSFW-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O KYYWBEYKBLQSFW-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- KQPYUDDGWXQXHS-UHFFFAOYSA-N juglone Chemical class O=C1C=CC(=O)C2=C1C=CC=C2O KQPYUDDGWXQXHS-UHFFFAOYSA-N 0.000 description 1
- CSFWPUWCSPOLJW-UHFFFAOYSA-N lawsone Chemical compound C1=CC=C2C(=O)C(O)=CC(=O)C2=C1 CSFWPUWCSPOLJW-UHFFFAOYSA-N 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229960000826 meclocycline Drugs 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021518 metal oxyhydroxide Inorganic materials 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 229940042016 methacycline Drugs 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229960004023 minocycline Drugs 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- RQNVIKXOOKXAJQ-UHFFFAOYSA-N naphthazarin Chemical class O=C1C=CC(=O)C2=C1C(O)=CC=C2O RQNVIKXOOKXAJQ-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- FEMOMIGRRWSMCU-UHFFFAOYSA-N ninhydrin Chemical compound C1=CC=C2C(=O)C(O)(O)C(=O)C2=C1 FEMOMIGRRWSMCU-UHFFFAOYSA-N 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- VCMMXZQDRFWYSE-UHFFFAOYSA-N plumbagin Chemical class C1=CC=C2C(=O)C(C)=CC(=O)C2=C1O VCMMXZQDRFWYSE-UHFFFAOYSA-N 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007614 solvation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229960001367 tartaric acid Drugs 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 229940072172 tetracycline antibiotic Drugs 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 235000019157 thiamine Nutrition 0.000 description 1
- 150000003544 thiamines Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000000954 titration curve Methods 0.000 description 1
- 235000010384 tocopherol Nutrition 0.000 description 1
- 229930003799 tocopherol Natural products 0.000 description 1
- 229960001295 tocopherol Drugs 0.000 description 1
- 239000011732 tocopherol Substances 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N trimethyl-ethylene Natural products CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- PVNIQBQSYATKKL-UHFFFAOYSA-N tripalmitin Chemical compound CCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCC PVNIQBQSYATKKL-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
- GVJHHUAWPYXKBD-IEOSBIPESA-N α-tocopherol Chemical compound OC1=C(C)C(C)=C2O[C@@](CCC[C@H](C)CCC[C@H](C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-IEOSBIPESA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
实施例1:硼改性的二氧化硅,涂覆3.6ppm的铁离子,不含抗坏血酸 | 实施例2:硼改性的二氧化硅,涂覆7.6ppm的铁离子,不含抗坏血酸 | 实施例3:硼改性的二氧化硅,涂覆7.6ppm的铁离子,含有200ppm的抗坏血酸 | 实施例4硼改性的二氧化硅,涂覆7.6ppm的铁离子,含有200ppm乙酸 | 实施例5硼改性的二氧化硅,涂覆7.6ppm的铁离子,含有800ppm乙酸 | |
涂覆硼的胶态二氧化硅(30%重量) | 43.5g | 43.5g | 43.5g | 43.5g | 43.5g |
胶态二氧化硅的ξ电位 | -92.3mV | -39.3mV | -39.9mV | -39.9mV | -39.9mV |
单(nano)水合硝酸铁 | 16ppm | 38ppm | 38ppm | 38ppm | 38ppm |
H2O2(%重量) | 133.3g | 133.3g | 823g | 823g | 823g |
水(%重量) | 823g | 823g | 94.65 | 94.65 | 94.65 |
pH | 4.7 | 3.9 | 3.8 | 3.8 | 3.8 |
杂质:在已抛光的片上的铁离子浓度,E 10A/cm2,A为铁污染的原子数 | 81.4 | 205 | 13.2 | 212 | 188 |
实施例2:对照实验,铁-硼表面改性的二氧化硅,二氧化硅表面涂覆7.6ppm的铁离子,时间为0 | 实施例3:200ppm的抗坏血酸,硼-铁表面改性的二氧化硅,二氧化硅表面涂覆7.6ppm的铁离子,时间为0 | 实施例4:对照实验,不含抗坏血酸,铁-硼表面改性的二氧化硅,二氧化硅表面涂覆7.6ppm的铁离子,时间为24小时 | 实施例5200ppm的抗坏血酸,铁-硼表面改性的二氧化硅,在二氧化硅表面涂覆7.6ppm的铁离子,时间为24小时 | |
硼表面改性的胶态二氧化硅(30%重量) | 43.5g | 43.5g | 43.5g | 43.5g |
胶态二氧化硅的ξ电位 | -39.3.mV | -39.3mV | -39.3mV | -39.3mV |
水合硝酸铁 | 38ppm | 38ppm | 38ppm | 38ppm |
抗坏血酸 | 0ppm | 200ppm | 0ppm | 200ppm |
H2O2(30%重量) | 133.3g | 133.3g | 133.3g | 133.3g |
水(%重量) | 823g | 823g | 823g | 823g |
pH | 3.9 | 4.1 | 4.1 | 3.8 |
钨移除速率(/分钟) | 6590 | 6430 | 5856 | 6236 |
TEOS移除速率(/分钟) | 189 | 249 | 168 | 210 |
一氮化钛移除速率(/分钟) | 1037 | 1458 | 820 | 1532 |
钨与一氮化钛的选择性 | 6.3 | 4.4 | 7.1 | 4.0 |
钨与TEOS的选择性 | 35 | 26 | 35 | 29 |
实施例6:对照实验,不含抗坏血酸,铁-硼表面改性的二氧化硅,二氧化硅表面涂覆7.6ppm的铁离子,6天 | 实施例7:200ppm的抗坏血酸,铁-硼表面改性的二氧化硅,二氧化硅表面涂覆7.6ppm的铁离子,6天 | |
涂覆硼的胶态二氧化硅(30%重量) | 43.5g | 43.5g |
胶态二氧化硅的ξ电位 | -39.3mV | |
水合硝酸铁 | 38ppm | 38ppm |
抗坏血酸 | 0ppm | 200ppm |
H2O2(%重量) | 133.3g | 133.3g |
水(%重量) | 823g | 823g |
pH | 3.9 | 3.9 |
钨移除速率(/分钟) | 3832 | 5479 |
TEOS移除速率(/分钟) | 135 | 184 |
一氮化钛移除速率(/分钟) | 917 | 1519 |
钨与一氮化钛的选择性 | 917 | 3.6 |
钨与TEOS的选择性 | 28 | 30 |
实施例8:铁-硼表面改性的二氧化硅,涂覆3.6ppm的铁离子,不含抗坏血酸 | 实施例9:铁-硼表面改性的二氧化硅,涂覆7.6ppm的铁离子,不含抗坏血酸 | 实施例10:铁-硼表面改性的二氧化硅,涂覆7.6ppm的铁离子,含有200ppm的抗坏血酸 | |
硼表面改性的胶态二氧化硅(30%重量) | 43.5g | 43.5g | 43.5g |
胶态二氧化硅的ξ电位 | -92.3mV | -39.3mV | -39.9mV |
水合硝酸铁 | 16ppm | 38ppm | 38ppm |
H2O2(%重量) | 133.3g | 133.3g | 823g |
水(%重量) | 823g | 823g | 94.65 |
pH | 4.7 | 3.9 | 3.8 |
缺陷:在已抛光的PETEOS晶片上的铁离子浓度,E10A/cm2,A为铁污染的原子数 | 81.4 | 205 | 13.2 |
实施例号/浆料基础制剂 | 即用时抗坏血酸%重量 | 即用时H2O2%重量 | CMP后PETEOS晶片上铁离子污染E10A/cm2 | 钨移除速率/分钟 |
实施例11/CMP3600TM实施例12/CMP3600TM实施例13/CMP3600TM | 00.010.04 | 444 | 376.7356.693.5 | 401045764147 |
Claims (31)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66493005P | 2005-03-25 | 2005-03-25 | |
US60/664,930 | 2005-03-25 | ||
US67467805P | 2005-04-26 | 2005-04-26 | |
US60/674,678 | 2005-04-26 | ||
PCT/US2006/011113 WO2006105020A1 (en) | 2005-03-25 | 2006-03-24 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101180379A true CN101180379A (zh) | 2008-05-14 |
CN101180379B CN101180379B (zh) | 2013-07-24 |
Family
ID=36581671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680017799.9A Expired - Fee Related CN101180379B (zh) | 2005-03-25 | 2006-03-24 | 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7476620B2 (zh) |
EP (1) | EP1871855B1 (zh) |
JP (1) | JP2008536302A (zh) |
CN (1) | CN101180379B (zh) |
DE (1) | DE602006013110D1 (zh) |
TW (1) | TWI418618B (zh) |
WO (1) | WO2006105020A1 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012055153A1 (zh) * | 2010-10-29 | 2012-05-03 | 安集微电子(上海)有限公司 | 一种钨化学机械抛光方法 |
CN104371649A (zh) * | 2014-09-28 | 2015-02-25 | 顾泉 | 一种化学机械研磨组合物 |
TWI484007B (zh) * | 2009-09-16 | 2015-05-11 | Cabot Microelectronics Corp | 拋光大塊矽之組合物及方法 |
TWI488952B (zh) * | 2009-11-12 | 2015-06-21 | Hitachi Chemical Co Ltd | Cmp研磿液以及使用此cmp研磨液的研磨方法以及半導體基板的製造方法 |
CN106366934A (zh) * | 2015-07-23 | 2017-02-01 | 凯斯科技股份有限公司 | 抛光料浆组合物 |
CN112920716A (zh) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | 一种用于氮化钛化学机械抛光的组合物及其使用方法 |
CN113637413A (zh) * | 2021-09-02 | 2021-11-12 | 万华化学集团电子材料有限公司 | 一种硅抛光组合物、制备方法及其应用 |
CN115433522A (zh) * | 2022-09-26 | 2022-12-06 | 深圳清华大学研究院 | 化学机械抛光液及其抛光方法 |
CN115584505A (zh) * | 2022-09-28 | 2023-01-10 | 湖南金裕环保科技有限公司 | 不锈钢化学抛光剂、制备方法及应用 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US8163049B2 (en) * | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US7837888B2 (en) * | 2006-11-13 | 2010-11-23 | Cabot Microelectronics Corporation | Composition and method for damascene CMP |
WO2008142093A1 (en) * | 2007-05-24 | 2008-11-27 | Basf Se | Chemical-mechanical polishing composition comprising metal-organic framework materials |
US20090061630A1 (en) * | 2007-08-30 | 2009-03-05 | Dupont Air Products Nanomaterials Llc | Method for Chemical Mechanical Planarization of A Metal-containing Substrate |
JP5288097B2 (ja) * | 2008-02-27 | 2013-09-11 | Jsr株式会社 | 化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法 |
US8974655B2 (en) * | 2008-03-24 | 2015-03-10 | Micron Technology, Inc. | Methods of planarization and electro-chemical mechanical polishing processes |
JP5365522B2 (ja) * | 2008-07-03 | 2013-12-11 | 旭硝子株式会社 | ガラス基板の研磨方法及び製造方法 |
US9074170B2 (en) | 2008-10-21 | 2015-07-07 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
KR101377902B1 (ko) | 2008-12-11 | 2014-03-24 | 히타치가세이가부시끼가이샤 | Cmp용 연마액 및 이것을 이용한 연마 방법 |
US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
US7947130B2 (en) * | 2009-10-24 | 2011-05-24 | Wai Mun Lee | Troika acid semiconductor cleaning compositions and methods of use |
ES2809528T3 (es) | 2009-10-30 | 2021-03-04 | Electronics & Telecommunications Res Inst | Método para transmitir símbolos de control y entrenamiento en un sistema de comunicación inalámbrica multiusuario |
WO2011093153A1 (ja) * | 2010-02-01 | 2011-08-04 | Jsr株式会社 | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 |
US8858819B2 (en) * | 2010-02-15 | 2014-10-14 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a tungsten-containing substrate |
JP5648567B2 (ja) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
RU2577281C2 (ru) * | 2010-09-08 | 2016-03-10 | Басф Се | Водная полирующая композиция и способ химико-механического полирования материалов подложек для электрических, механических и оптических устройств |
JP2012079717A (ja) * | 2010-09-30 | 2012-04-19 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
JP2013247341A (ja) * | 2012-05-29 | 2013-12-09 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
US11306007B2 (en) * | 2016-09-20 | 2022-04-19 | National Research Council Of Canada | Ferro-cavitation processes for target metal separation |
WO2018058347A1 (en) * | 2016-09-28 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds |
US9984895B1 (en) * | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
JP2021145090A (ja) * | 2020-03-13 | 2021-09-24 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
KR102531445B1 (ko) * | 2020-10-28 | 2023-05-12 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE657099A (zh) * | 1963-12-30 | |||
FR2604443A1 (fr) * | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
SU1629353A1 (ru) | 1988-08-17 | 1991-02-23 | Предприятие П/Я В-2750 | Раствор дл виброхимического шлифовани деталей из алюминиевых сплавов |
US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
US5981454A (en) * | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
US6546939B1 (en) * | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US20040140288A1 (en) * | 1996-07-25 | 2004-07-22 | Bakul Patel | Wet etch of titanium-tungsten film |
US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
WO1999053532A1 (en) | 1998-04-10 | 1999-10-21 | Ferro Corporation | Slurry for chemical-mechanical polishing metal surfaces |
US6635562B2 (en) * | 1998-09-15 | 2003-10-21 | Micron Technology, Inc. | Methods and solutions for cleaning polished aluminum-containing layers |
SG99289A1 (en) * | 1998-10-23 | 2003-10-27 | Ibm | Chemical-mechanical planarization of metallurgy |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
SG73683A1 (en) * | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
JP3649279B2 (ja) * | 1998-12-25 | 2005-05-18 | 日立化成工業株式会社 | 基板の研磨方法 |
US6752844B2 (en) * | 1999-03-29 | 2004-06-22 | Intel Corporation | Ceric-ion slurry for use in chemical-mechanical polishing |
GB9920532D0 (en) * | 1999-09-01 | 1999-11-03 | Univ Abertay | Method |
JP4273475B2 (ja) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
SG90227A1 (en) | 2000-01-18 | 2002-07-23 | Praxair Technology Inc | Polishing slurry |
US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
JP3945964B2 (ja) * | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | 研磨剤、研磨方法及び半導体装置の製造方法 |
US6348440B1 (en) * | 2000-08-02 | 2002-02-19 | Betzdearborn Inc. | Method of cleaning a metal surface |
US6541384B1 (en) * | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
US6508953B1 (en) * | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
US6702954B1 (en) * | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
JP4009986B2 (ja) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
US6464568B2 (en) * | 2000-12-04 | 2002-10-15 | Intel Corporation | Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
US6326305B1 (en) * | 2000-12-05 | 2001-12-04 | Advanced Micro Devices, Inc. | Ceria removal in chemical-mechanical polishing of integrated circuits |
US6383065B1 (en) * | 2001-01-22 | 2002-05-07 | Cabot Microelectronics Corporation | Catalytic reactive pad for metal CMP |
EP1369906B1 (en) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polishing compound and method for polishing substrate |
US6399492B1 (en) * | 2001-03-15 | 2002-06-04 | Micron Technology, Inc. | Ruthenium silicide processing methods |
JP4439755B2 (ja) * | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法 |
US20030082101A1 (en) * | 2001-06-11 | 2003-05-01 | Cavalier Discovery | Accelerators for increasing the rate of formation of free radicals and reactive oxygen species |
MY144587A (en) * | 2001-06-21 | 2011-10-14 | Kao Corp | Polishing composition |
US6589100B2 (en) * | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US6743267B2 (en) * | 2001-10-15 | 2004-06-01 | Dupont Air Products Nanomaterials Llc | Gel-free colloidal abrasive polishing compositions and associated methods |
AU2002359356A1 (en) * | 2001-11-16 | 2003-06-10 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US6620215B2 (en) * | 2001-12-21 | 2003-09-16 | Dynea Canada, Ltd. | Abrasive composition containing organic particles for chemical mechanical planarization |
US6884723B2 (en) * | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
KR100444308B1 (ko) * | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US20030224958A1 (en) * | 2002-05-29 | 2003-12-04 | Andreas Michael T. | Solutions for cleaning polished aluminum-containing layers |
US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
US6806193B2 (en) * | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
US20050067378A1 (en) * | 2003-09-30 | 2005-03-31 | Harry Fuerhaupter | Method for micro-roughening treatment of copper and mixed-metal circuitry |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
-
2006
- 2006-03-24 WO PCT/US2006/011113 patent/WO2006105020A1/en active Application Filing
- 2006-03-24 EP EP06748744A patent/EP1871855B1/en active Active
- 2006-03-24 DE DE602006013110T patent/DE602006013110D1/de active Active
- 2006-03-24 CN CN200680017799.9A patent/CN101180379B/zh not_active Expired - Fee Related
- 2006-03-24 US US11/387,934 patent/US7476620B2/en active Active
- 2006-03-24 JP JP2008503282A patent/JP2008536302A/ja active Pending
- 2006-03-27 TW TW095110565A patent/TWI418618B/zh active
-
2009
- 2009-01-13 US US12/352,700 patent/US8114775B2/en active Active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI484007B (zh) * | 2009-09-16 | 2015-05-11 | Cabot Microelectronics Corp | 拋光大塊矽之組合物及方法 |
TWI488952B (zh) * | 2009-11-12 | 2015-06-21 | Hitachi Chemical Co Ltd | Cmp研磿液以及使用此cmp研磨液的研磨方法以及半導體基板的製造方法 |
WO2012055153A1 (zh) * | 2010-10-29 | 2012-05-03 | 安集微电子(上海)有限公司 | 一种钨化学机械抛光方法 |
CN104371649A (zh) * | 2014-09-28 | 2015-02-25 | 顾泉 | 一种化学机械研磨组合物 |
CN106366934A (zh) * | 2015-07-23 | 2017-02-01 | 凯斯科技股份有限公司 | 抛光料浆组合物 |
CN106366934B (zh) * | 2015-07-23 | 2018-10-19 | 凯斯科技股份有限公司 | 抛光料浆组合物 |
CN112920716A (zh) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | 一种用于氮化钛化学机械抛光的组合物及其使用方法 |
CN113637413A (zh) * | 2021-09-02 | 2021-11-12 | 万华化学集团电子材料有限公司 | 一种硅抛光组合物、制备方法及其应用 |
CN115433522A (zh) * | 2022-09-26 | 2022-12-06 | 深圳清华大学研究院 | 化学机械抛光液及其抛光方法 |
CN115433522B (zh) * | 2022-09-26 | 2023-07-04 | 深圳清华大学研究院 | 化学机械抛光液及其抛光方法 |
CN115584505A (zh) * | 2022-09-28 | 2023-01-10 | 湖南金裕环保科技有限公司 | 不锈钢化学抛光剂、制备方法及应用 |
Also Published As
Publication number | Publication date |
---|---|
CN101180379B (zh) | 2013-07-24 |
EP1871855A1 (en) | 2008-01-02 |
EP1871855B1 (en) | 2010-03-24 |
US8114775B2 (en) | 2012-02-14 |
WO2006105020A1 (en) | 2006-10-05 |
TW200708603A (en) | 2007-03-01 |
TWI418618B (zh) | 2013-12-11 |
US20090308836A1 (en) | 2009-12-17 |
DE602006013110D1 (de) | 2010-05-06 |
US7476620B2 (en) | 2009-01-13 |
US20060270235A1 (en) | 2006-11-30 |
JP2008536302A (ja) | 2008-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101180379B (zh) | 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 | |
US11643599B2 (en) | Tungsten chemical mechanical polishing for reduced oxide erosion | |
CN101351518B (zh) | 连接到固体用以增强cmp配方的自由基形成活化剂 | |
US7435162B2 (en) | Polishing fluids and methods for CMP | |
US5980775A (en) | Composition and slurry useful for metal CMP | |
EP0844290B1 (en) | A composition and slurry useful for metal CMP | |
CN100569882C (zh) | 用于铜的化学机械平坦化的浆料和方法 | |
KR20070078814A (ko) | 금속용 연마액 및 그것을 사용한 화학적 기계적 연마방법 | |
JPH08510437A (ja) | 研磨用合成物および研磨方法 | |
JP2000501771A (ja) | 化学機械研磨組成物及び化学機械研磨方法 | |
US20160122590A1 (en) | Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor | |
TW200806781A (en) | Fluoride-modified silica sols for chemical mechanical planarization | |
US20190071588A1 (en) | Polishing composition, polishing method, and method for manufacturing semiconductor substrate | |
TW200804575A (en) | Metal polishing composition and chemical mechanical polishing method using the same | |
JP2019169687A (ja) | 研磨用組成物 | |
TW201235428A (en) | Metal-passivating CMP compositions and methods | |
KR20100077748A (ko) | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 | |
TW201311874A (zh) | 化學機械拋光液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AIR PRODUCTS AND CHEMICALS, INE. Free format text: FORMER OWNER: DUPONT AIR PRODUCTS NANOMATERI Effective date: 20120725 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120725 Address after: American Pennsylvania Applicant after: Air Products and Chemicals, Inc. Address before: Arizona, USA Applicant before: Dupont Air Products Nanomateri |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130724 Termination date: 20150324 |
|
EXPY | Termination of patent right or utility model |