JP2010535424A5 - - Google Patents

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Publication number
JP2010535424A5
JP2010535424A5 JP2010519924A JP2010519924A JP2010535424A5 JP 2010535424 A5 JP2010535424 A5 JP 2010535424A5 JP 2010519924 A JP2010519924 A JP 2010519924A JP 2010519924 A JP2010519924 A JP 2010519924A JP 2010535424 A5 JP2010535424 A5 JP 2010535424A5
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JP
Japan
Prior art keywords
composition
substrate
cmp
ruthenium
ligand
Prior art date
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Application number
JP2010519924A
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English (en)
Japanese (ja)
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JP2010535424A (ja
JP5314019B2 (ja
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Priority claimed from US11/888,406 external-priority patent/US8008202B2/en
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Publication of JP2010535424A publication Critical patent/JP2010535424A/ja
Publication of JP2010535424A5 publication Critical patent/JP2010535424A5/ja
Application granted granted Critical
Publication of JP5314019B2 publication Critical patent/JP5314019B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010519924A 2007-08-01 2008-07-31 ルテニウムｃｍｐ組成物及び方法 Expired - Fee Related JP5314019B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/888,406 2007-08-01
US11/888,406 US8008202B2 (en) 2007-08-01 2007-08-01 Ruthenium CMP compositions and methods
PCT/US2008/009245 WO2009017782A2 (en) 2007-08-01 2008-07-31 Ruthenium cmp compositions and methods

Publications (3)

Publication Number Publication Date
JP2010535424A JP2010535424A (ja) 2010-11-18
JP2010535424A5 true JP2010535424A5 (enExample) 2011-09-08
JP5314019B2 JP5314019B2 (ja) 2013-10-16

Family

ID=40305135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010519924A Expired - Fee Related JP5314019B2 (ja) 2007-08-01 2008-07-31 ルテニウムｃｍｐ組成物及び方法

Country Status (5)

Country Link
US (1) US8008202B2 (enExample)
JP (1) JP5314019B2 (enExample)
KR (1) KR101195349B1 (enExample)
TW (1) TWI388638B (enExample)
WO (1) WO2009017782A2 (enExample)

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US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US8327066B2 (en) 2008-09-30 2012-12-04 Samsung Electronics Co., Ltd. Method of managing a solid state drive, associated systems and implementations
US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
US9281275B2 (en) 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
CN113383408B (zh) 2019-02-13 2025-04-08 株式会社德山 含有鎓盐的半导体晶圆的处理液
KR102582791B1 (ko) 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
EP4305118A4 (en) * 2021-05-13 2025-05-28 Araca, Inc. SILICON CARBIDE (SIC) WAFER POLISHING USING SLURRY FORMULATION AND PROCESS
US12435243B2 (en) 2021-06-30 2025-10-07 Entegris, Inc. Polishing of transition metals
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

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