JP2010114446A5 - - Google Patents
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- Publication number
- JP2010114446A5 JP2010114446A5 JP2009252837A JP2009252837A JP2010114446A5 JP 2010114446 A5 JP2010114446 A5 JP 2010114446A5 JP 2009252837 A JP2009252837 A JP 2009252837A JP 2009252837 A JP2009252837 A JP 2009252837A JP 2010114446 A5 JP2010114446 A5 JP 2010114446A5
- Authority
- JP
- Japan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing composition
- antimony
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 30
- 239000000126 substance Substances 0.000 claims 20
- 239000000203 mixture Substances 0.000 claims 15
- 229910045601 alloy Inorganic materials 0.000 claims 12
- 239000000956 alloy Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 9
- 229910000618 GeSbTe Inorganic materials 0.000 claims 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 6
- 229920002635 polyurethane Polymers 0.000 claims 5
- 239000004814 polyurethane Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000008119 colloidal silica Substances 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- 230000009466 transformation Effects 0.000 claims 4
- 150000004770 chalcogenides Chemical class 0.000 claims 3
- 239000010419 fine particle Substances 0.000 claims 3
- 239000006061 abrasive grain Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/264,928 | 2008-11-05 | ||
| US12/264,928 US8735293B2 (en) | 2008-11-05 | 2008-11-05 | Chemical mechanical polishing composition and methods relating thereto |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010114446A JP2010114446A (ja) | 2010-05-20 |
| JP2010114446A5 true JP2010114446A5 (enExample) | 2012-12-13 |
| JP5543174B2 JP5543174B2 (ja) | 2014-07-09 |
Family
ID=41581914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009252837A Expired - Fee Related JP5543174B2 (ja) | 2008-11-05 | 2009-11-04 | ケミカルメカニカル研磨組成物及びそれに関連する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8735293B2 (enExample) |
| EP (1) | EP2184330B1 (enExample) |
| JP (1) | JP5543174B2 (enExample) |
| KR (1) | KR101655790B1 (enExample) |
| CN (1) | CN101736344B (enExample) |
| TW (1) | TWI460262B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101341875B1 (ko) * | 2008-04-30 | 2013-12-16 | 한양대학교 산학협력단 | 상변환 물질 연마용 슬러리 및 이를 이용한 상변환 물질의 패터닝 방법 |
| US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
| US20120001118A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Polishing slurry for chalcogenide alloy |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| US8309468B1 (en) * | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
| JP2013080751A (ja) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | 研磨用組成物 |
| JP2013084876A (ja) * | 2011-09-30 | 2013-05-09 | Fujimi Inc | 研磨用組成物 |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| JP2013247341A (ja) | 2012-05-29 | 2013-12-09 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
| KR20140000496A (ko) * | 2012-06-22 | 2014-01-03 | 에스케이하이닉스 주식회사 | 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법 |
| JP6139975B2 (ja) * | 2013-05-15 | 2017-05-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6482234B2 (ja) * | 2014-10-22 | 2019-03-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| CN108624234A (zh) * | 2017-03-21 | 2018-10-09 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| JP6775453B2 (ja) * | 2017-03-23 | 2020-10-28 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| WO2020123332A1 (en) * | 2018-12-10 | 2020-06-18 | Cabot Microelectronics Corporation | Oxidizer free slurry for ruthenium cmp |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6757971B2 (en) | 2001-08-30 | 2004-07-06 | Micron Technology, Inc. | Filling plugs through chemical mechanical polish |
| US6884144B2 (en) | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
| WO2004053456A2 (en) | 2002-12-09 | 2004-06-24 | Corning Incorporated | Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials |
| KR100681266B1 (ko) | 2005-07-25 | 2007-02-09 | 삼성전자주식회사 | 가변 저항 구조물의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법 |
| US7741636B2 (en) | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
| US7897061B2 (en) | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| US7297633B1 (en) * | 2006-06-05 | 2007-11-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection |
| KR100807223B1 (ko) | 2006-07-12 | 2008-02-28 | 삼성전자주식회사 | 상변화 물질층, 상변화 물질층 형성 방법 및 이를 이용한상변화 메모리 장치의 제조 방법 |
| US8518296B2 (en) * | 2007-02-14 | 2013-08-27 | Micron Technology, Inc. | Slurries and methods for polishing phase change materials |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| MY155239A (en) * | 2007-07-26 | 2015-09-30 | Cabot Microelectronics Corp | Compositions and methods for chemical-mechanical polishing of phase change materials |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| KR101198100B1 (ko) * | 2007-12-11 | 2012-11-09 | 삼성전자주식회사 | 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 |
-
2008
- 2008-11-05 US US12/264,928 patent/US8735293B2/en not_active Expired - Fee Related
-
2009
- 2009-03-13 EP EP09155072A patent/EP2184330B1/en not_active Ceased
- 2009-11-03 KR KR1020090105468A patent/KR101655790B1/ko not_active Expired - Fee Related
- 2009-11-04 TW TW098137364A patent/TWI460262B/zh not_active IP Right Cessation
- 2009-11-04 JP JP2009252837A patent/JP5543174B2/ja not_active Expired - Fee Related
- 2009-11-05 CN CN2009102083436A patent/CN101736344B/zh not_active Expired - Fee Related