JP2012235110A5 - - Google Patents
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- Publication number
- JP2012235110A5 JP2012235110A5 JP2012098807A JP2012098807A JP2012235110A5 JP 2012235110 A5 JP2012235110 A5 JP 2012235110A5 JP 2012098807 A JP2012098807 A JP 2012098807A JP 2012098807 A JP2012098807 A JP 2012098807A JP 2012235110 A5 JP2012235110 A5 JP 2012235110A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- substrate
- polishing composition
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 23
- 239000000126 substance Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 15
- 239000000203 mixture Substances 0.000 claims 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 11
- 229910000618 GeSbTe Inorganic materials 0.000 claims 10
- 229910045601 alloy Inorganic materials 0.000 claims 10
- 239000000956 alloy Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 230000007547 defect Effects 0.000 claims 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/096,740 US8309468B1 (en) | 2011-04-28 | 2011-04-28 | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
| US13/096,740 | 2011-04-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012235110A JP2012235110A (ja) | 2012-11-29 |
| JP2012235110A5 true JP2012235110A5 (enExample) | 2015-06-11 |
| JP5947611B2 JP5947611B2 (ja) | 2016-07-06 |
Family
ID=47007821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012098807A Expired - Fee Related JP5947611B2 (ja) | 2011-04-28 | 2012-04-24 | ケミカルメカニカルポリッシング組成物及びゲルマニウム−アンチモン−テルル合金を研磨する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8309468B1 (enExample) |
| JP (1) | JP5947611B2 (enExample) |
| CN (1) | CN102756326B (enExample) |
| DE (1) | DE102012007811A1 (enExample) |
| FR (1) | FR2974530B1 (enExample) |
| TW (1) | TWI532830B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| JP2013084876A (ja) * | 2011-09-30 | 2013-05-09 | Fujimi Inc | 研磨用組成物 |
| US9238755B2 (en) * | 2011-11-25 | 2016-01-19 | Fujima Incorporated | Polishing composition |
| US8920667B2 (en) * | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
| JP6094541B2 (ja) * | 2014-07-28 | 2017-03-15 | 信越半導体株式会社 | ゲルマニウムウェーハの研磨方法 |
| JP7545106B2 (ja) | 2019-08-29 | 2024-09-04 | 日産化学株式会社 | 過酸化水素を含む酸化物系基板の研磨用組成物 |
| CN114605922B (zh) * | 2022-03-18 | 2023-05-09 | 北京通美晶体技术股份有限公司 | 一种快速抛光的化学抛光液及其制备方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5080947A (en) * | 1987-12-25 | 1992-01-14 | Ricoh Company, Ltd. | Information recording medium |
| US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
| US6176895B1 (en) * | 1998-11-04 | 2001-01-23 | Desimone Joseph M. | Polymers for metal extractions in carbon dioxide |
| US6884144B2 (en) | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
| JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
| KR100672940B1 (ko) * | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| CN1300271C (zh) * | 2004-09-24 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用 |
| EA014409B1 (ru) * | 2005-01-18 | 2010-12-30 | Айдахо Рисерч Фаундейшн, Инк. | Способ извлечения металла из металлосодержащего материала экстракцией |
| CN101511607A (zh) * | 2005-06-06 | 2009-08-19 | 高级技术材料公司 | 整合的化学机械抛光组合物及单台板处理方法 |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
| CN101101962A (zh) * | 2007-07-26 | 2008-01-09 | 上海交通大学 | 基于镓掺杂Ga3Sb8Te1相变存储单元及其制备方法 |
| CN101765647B (zh) | 2007-07-26 | 2016-05-04 | 卡伯特微电子公司 | 用于相变材料的化学-机械抛光的组合物及方法 |
| US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| KR101198100B1 (ko) | 2007-12-11 | 2012-11-09 | 삼성전자주식회사 | 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 |
| CN101372606B (zh) * | 2008-10-14 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | 用氧化铈化学机械抛光液抛光硫系化合物相变材料的方法 |
| US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
| KR20100101379A (ko) * | 2009-03-09 | 2010-09-17 | 삼성전자주식회사 | 상변화 물질의 화학 기계적 연마 방법, 및 이를 이용한 상변화 메모리 소자 제조 방법 |
| CN102893376A (zh) * | 2010-06-01 | 2013-01-23 | 应用材料公司 | 铜晶圆研磨的化学平坦化 |
| US20120003834A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Method Of Polishing Chalcogenide Alloy |
| US20120001118A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Polishing slurry for chalcogenide alloy |
-
2011
- 2011-04-28 US US13/096,740 patent/US8309468B1/en not_active Expired - Fee Related
-
2012
- 2012-04-10 TW TW101112578A patent/TWI532830B/zh not_active IP Right Cessation
- 2012-04-18 DE DE102012007811A patent/DE102012007811A1/de not_active Withdrawn
- 2012-04-24 JP JP2012098807A patent/JP5947611B2/ja not_active Expired - Fee Related
- 2012-04-26 CN CN201210139136.1A patent/CN102756326B/zh not_active Expired - Fee Related
- 2012-04-27 FR FR1253891A patent/FR2974530B1/fr not_active Expired - Fee Related
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