JP2019036714A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019036714A5 JP2019036714A5 JP2018115479A JP2018115479A JP2019036714A5 JP 2019036714 A5 JP2019036714 A5 JP 2019036714A5 JP 2018115479 A JP2018115479 A JP 2018115479A JP 2018115479 A JP2018115479 A JP 2018115479A JP 2019036714 A5 JP2019036714 A5 JP 2019036714A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- tungsten
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 78
- 239000000126 substance Substances 0.000 claims description 57
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 229920002635 polyurethane Polymers 0.000 claims description 17
- 239000004814 polyurethane Substances 0.000 claims description 17
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000006061 abrasive grain Substances 0.000 claims description 9
- 239000008119 colloidal silica Substances 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 239000011859 microparticle Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000004475 Arginine Substances 0.000 claims description 6
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 2
- 125000000129 anionic group Chemical group 0.000 claims 2
- 230000003115 biocidal effect Effects 0.000 claims 2
- 239000003139 biocide Substances 0.000 claims 2
- 229910021653 sulphate ion Inorganic materials 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000003124 biologic agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762543416P | 2017-08-10 | 2017-08-10 | |
| US62/543,416 | 2017-08-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019036714A JP2019036714A (ja) | 2019-03-07 |
| JP2019036714A5 true JP2019036714A5 (enExample) | 2021-09-30 |
| JP7171259B2 JP7171259B2 (ja) | 2022-11-15 |
Family
ID=65084543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018115479A Active JP7171259B2 (ja) | 2017-08-10 | 2018-06-18 | タングステンのための化学的機械的研磨法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10600655B2 (enExample) |
| JP (1) | JP7171259B2 (enExample) |
| KR (1) | KR102491258B1 (enExample) |
| CN (1) | CN109382756B (enExample) |
| DE (1) | DE102018006078A1 (enExample) |
| FR (1) | FR3070021B1 (enExample) |
| TW (1) | TWI837097B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US11643599B2 (en) * | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
| KR20210142756A (ko) * | 2019-04-17 | 2021-11-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 버프 적용을 위한 표면 코팅된 연마제 입자 |
| CN113004802B (zh) * | 2019-12-20 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR20230042493A (ko) * | 2020-07-28 | 2023-03-28 | 씨엠씨 머티리얼즈, 인코포레이티드 | 음이온성 및 양이온성 억제제를 포함하는 cmp 조성물 |
| TWI824280B (zh) * | 2020-08-24 | 2023-12-01 | 南韓商Ｓｋ恩普士股份有限公司 | 研磨墊及使用該研磨墊之用於製備半導體裝置的方法 |
| WO2022060735A1 (en) * | 2020-09-18 | 2022-03-24 | Cmc Materials, Inc. | Silica-based slurry for selective polishing of carbon-based films |
| US12497540B2 (en) * | 2021-09-30 | 2025-12-16 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| WO2025088012A1 (en) | 2023-10-26 | 2025-05-01 | Basf Se | Compositions and methods for removal of tungsten and dielectric layers |
| WO2025111136A1 (en) | 2023-11-21 | 2025-05-30 | Versum Materials Us, Llc | Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions |
| WO2025111138A1 (en) | 2023-11-22 | 2025-05-30 | Versum Materials Us, Llc | Biocides for chemical mechanical planarization (cmp) polishing compositions |
| US20250368859A1 (en) * | 2024-05-29 | 2025-12-04 | Entegris, Inc. | Silica-based slurry for selective polishing of carbon-based films |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093649A (en) | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
| CN1209430C (zh) | 1999-08-13 | 2005-07-06 | 卡伯特微电子公司 | 化学机械抛光系统及其使用方法 |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| US6632259B2 (en) | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US6884724B2 (en) * | 2001-08-24 | 2005-04-26 | Applied Materials, Inc. | Method for dishing reduction and feature passivation in polishing processes |
| US20050045852A1 (en) | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
| KR20060016498A (ko) | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
| US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
| JP2008124222A (ja) | 2006-11-10 | 2008-05-29 | Fujifilm Corp | 研磨液 |
| WO2009042073A2 (en) | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| KR101186110B1 (ko) * | 2009-01-14 | 2012-09-27 | 솔브레인 주식회사 | 금속막의 화학 기계적 연마용 슬러리 조성물 |
| KR101293790B1 (ko) * | 2010-12-31 | 2013-08-06 | 제일모직주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| WO2013018015A2 (en) * | 2011-08-01 | 2013-02-07 | Basf Se | A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND |
| DE112013005264T5 (de) * | 2012-11-02 | 2015-09-24 | Fujimi Incorporated | Polierzusammensetzung |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| EP3161858B1 (en) | 2014-06-25 | 2021-01-27 | Cabot Microelectronics Corporation | Colloidal silica chemical-mechanical polishing concentrate |
| EP3161098B1 (en) * | 2014-06-25 | 2022-10-26 | CMC Materials, Inc. | Tungsten chemical-mechanical polishing composition |
| US9275899B2 (en) * | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
| US9731398B2 (en) | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
-
2018
- 2018-04-24 US US15/961,133 patent/US10600655B2/en active Active
- 2018-06-18 JP JP2018115479A patent/JP7171259B2/ja active Active
- 2018-07-12 TW TW107124028A patent/TWI837097B/zh active
- 2018-07-24 CN CN201810822602.3A patent/CN109382756B/zh active Active
- 2018-07-26 KR KR1020180086879A patent/KR102491258B1/ko active Active
- 2018-08-01 DE DE102018006078.1A patent/DE102018006078A1/de not_active Withdrawn
- 2018-08-08 FR FR1857380A patent/FR3070021B1/fr not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019036714A5 (enExample) | ||
| JP2013042132A5 (enExample) | ||
| TWI398473B (zh) | 用於拋光在鑲嵌結構中之鋁／銅及鈦之組合物 | |
| CN101512732B (zh) | 利用水溶性氧化剂的碳化硅抛光方法 | |
| KR102390227B1 (ko) | 텅스텐 버핑용 조성물 | |
| JP4372173B2 (ja) | 化学的機械的研磨方法および半導体装置の製造方法 | |
| JP2009543337A5 (enExample) | ||
| CN100372902C (zh) | 稀土盐/氧化剂为基础的化学-机械抛光方法 | |
| JP2010114446A5 (enExample) | ||
| JP6719452B2 (ja) | 研磨用組成物 | |
| JP2008068390A (ja) | 結晶材料の研磨加工方法 | |
| JP2019057710A5 (enExample) | ||
| TWI683896B (zh) | 研磨用組成物 | |
| JP2005518090A (ja) | 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤 | |
| JP2004532509A5 (enExample) | ||
| JP6030145B2 (ja) | 研磨用スラリー及びこれを用いた基板の研磨方法 | |
| TW201101378A (en) | Method for polishing the edge of a semiconductor wafer | |
| JP2019110286A5 (enExample) | ||
| TW201333176A (zh) | 研磨用組成物 | |
| CN105583696A (zh) | 研磨液和SiC基板的研磨方法 | |
| JP2021169604A5 (enExample) | ||
| JP2012235110A5 (enExample) | ||
| TW201044451A (en) | CMP method | |
| JP2009505397A (ja) | 化学機械研磨のための化学改質研磨パッド | |
| JP3784988B2 (ja) | 半導体装置の製造方法 |