JP2019036714A5 - - Google Patents
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- Publication number
- JP2019036714A5 JP2019036714A5 JP2018115479A JP2018115479A JP2019036714A5 JP 2019036714 A5 JP2019036714 A5 JP 2019036714A5 JP 2018115479 A JP2018115479 A JP 2018115479A JP 2018115479 A JP2018115479 A JP 2018115479A JP 2019036714 A5 JP2019036714 A5 JP 2019036714A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- tungsten
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 78
- 239000000126 substance Substances 0.000 claims description 57
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 229920002635 polyurethane Polymers 0.000 claims description 17
- 239000004814 polyurethane Substances 0.000 claims description 17
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000006061 abrasive grain Substances 0.000 claims description 9
- 239000008119 colloidal silica Substances 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 239000011859 microparticle Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000004475 Arginine Substances 0.000 claims description 6
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 2
- 125000000129 anionic group Chemical group 0.000 claims 2
- 230000003115 biocidal effect Effects 0.000 claims 2
- 239000003139 biocide Substances 0.000 claims 2
- 229910021653 sulphate ion Inorganic materials 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000003124 biologic agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762543416P | 2017-08-10 | 2017-08-10 | |
| US62/543,416 | 2017-08-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019036714A JP2019036714A (ja) | 2019-03-07 |
| JP2019036714A5 true JP2019036714A5 (enExample) | 2021-09-30 |
| JP7171259B2 JP7171259B2 (ja) | 2022-11-15 |
Family
ID=65084543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018115479A Active JP7171259B2 (ja) | 2017-08-10 | 2018-06-18 | タングステンのための化学的機械的研磨法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10600655B2 (enExample) |
| JP (1) | JP7171259B2 (enExample) |
| KR (1) | KR102491258B1 (enExample) |
| CN (1) | CN109382756B (enExample) |
| DE (1) | DE102018006078A1 (enExample) |
| FR (1) | FR3070021B1 (enExample) |
| TW (1) | TWI837097B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US11643599B2 (en) * | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
| KR20210142756A (ko) * | 2019-04-17 | 2021-11-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 버프 적용을 위한 표면 코팅된 연마제 입자 |
| CN113004802B (zh) * | 2019-12-20 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| TWI865805B (zh) | 2020-07-28 | 2024-12-11 | 美商Ｃｍｃ材料有限責任公司 | 包含陰離子性及陽離子性抑制劑之cmp組合物 |
| TWI824280B (zh) * | 2020-08-24 | 2023-12-01 | 南韓商Ｓｋ恩普士股份有限公司 | 研磨墊及使用該研磨墊之用於製備半導體裝置的方法 |
| EP4214286A4 (en) * | 2020-09-18 | 2024-10-23 | CMC Materials LLC | SILICA-BASED SLURRY FOR SELECTIVE POLISHING OF CARBON-BASED FILMS |
| US12497540B2 (en) * | 2021-09-30 | 2025-12-16 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| WO2025088012A1 (en) | 2023-10-26 | 2025-05-01 | Basf Se | Compositions and methods for removal of tungsten and dielectric layers |
| WO2025111136A1 (en) | 2023-11-21 | 2025-05-30 | Versum Materials Us, Llc | Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions |
| WO2025111138A1 (en) | 2023-11-22 | 2025-05-30 | Versum Materials Us, Llc | Biocides for chemical mechanical planarization (cmp) polishing compositions |
| WO2025250750A1 (en) * | 2024-05-29 | 2025-12-04 | Entegris, Inc. | Silica-based slurry for selective polishing of carbon-based films |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093649A (en) | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
| IL147235A0 (en) | 1999-08-13 | 2002-08-14 | Cabot Microelectronics Corp | Chemical mechanical polishing systems and methods for their use |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| US6632259B2 (en) | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US6884724B2 (en) * | 2001-08-24 | 2005-04-26 | Applied Materials, Inc. | Method for dishing reduction and feature passivation in polishing processes |
| US20050045852A1 (en) | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
| KR20060016498A (ko) | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
| US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
| JP2008124222A (ja) | 2006-11-10 | 2008-05-29 | Fujifilm Corp | 研磨液 |
| CN101802116B (zh) | 2007-09-21 | 2014-03-12 | 卡伯特微电子公司 | 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| KR101186110B1 (ko) * | 2009-01-14 | 2012-09-27 | 솔브레인 주식회사 | 금속막의 화학 기계적 연마용 슬러리 조성물 |
| KR101293790B1 (ko) * | 2010-12-31 | 2013-08-06 | 제일모직주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| JP2014529183A (ja) * | 2011-08-01 | 2014-10-30 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 特定の有機化合物を含む化学機械研磨用組成物の存在下での元素ゲルマニウムおよび／またはＳｉ１−ｘＧｅｘ材料の化学機械研磨を含む、半導体デバイスを製造するための方法 |
| CN104755580A (zh) * | 2012-11-02 | 2015-07-01 | 福吉米株式会社 | 研磨用组合物 |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| KR102464630B1 (ko) | 2014-06-25 | 2022-11-08 | 씨엠씨 머티리얼즈, 인코포레이티드 | 콜로이드성 실리카 화학적-기계적 연마 조성물 |
| WO2015200679A1 (en) * | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Tungsten chemical-mechanical polishing composition |
| US9275899B2 (en) | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
| US9731398B2 (en) | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
-
2018
- 2018-04-24 US US15/961,133 patent/US10600655B2/en active Active
- 2018-06-18 JP JP2018115479A patent/JP7171259B2/ja active Active
- 2018-07-12 TW TW107124028A patent/TWI837097B/zh active
- 2018-07-24 CN CN201810822602.3A patent/CN109382756B/zh active Active
- 2018-07-26 KR KR1020180086879A patent/KR102491258B1/ko active Active
- 2018-08-01 DE DE102018006078.1A patent/DE102018006078A1/de not_active Withdrawn
- 2018-08-08 FR FR1857380A patent/FR3070021B1/fr not_active Expired - Fee Related
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