TWI837097B - 鎢之化學機械拋光方法 - Google Patents

鎢之化學機械拋光方法 Download PDF

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Publication number
TWI837097B
TWI837097B TW107124028A TW107124028A TWI837097B TW I837097 B TWI837097 B TW I837097B TW 107124028 A TW107124028 A TW 107124028A TW 107124028 A TW107124028 A TW 107124028A TW I837097 B TWI837097 B TW I837097B
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TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
tungsten
ppm
polishing composition
Prior art date
Application number
TW107124028A
Other languages
English (en)
Chinese (zh)
Other versions
TW201910457A (zh
Inventor
彭嘉德
何藺蓁
許曜薪
Original Assignee
美商羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 美商羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 美商羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201910457A publication Critical patent/TW201910457A/zh
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Publication of TWI837097B publication Critical patent/TWI837097B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW107124028A 2017-08-10 2018-07-12 鎢之化學機械拋光方法 TWI837097B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762543416P 2017-08-10 2017-08-10
US62/543416 2017-08-10

Publications (2)

Publication Number Publication Date
TW201910457A TW201910457A (zh) 2019-03-16
TWI837097B true TWI837097B (zh) 2024-04-01

Family

ID=65084543

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107124028A TWI837097B (zh) 2017-08-10 2018-07-12 鎢之化學機械拋光方法

Country Status (7)

Country Link
US (1) US10600655B2 (enExample)
JP (1) JP7171259B2 (enExample)
KR (1) KR102491258B1 (enExample)
CN (1) CN109382756B (enExample)
DE (1) DE102018006078A1 (enExample)
FR (1) FR3070021B1 (enExample)
TW (1) TWI837097B (enExample)

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* Cited by examiner, † Cited by third party
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US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
TWI875753B (zh) * 2019-04-17 2025-03-11 美商Ｃｍｃ材料有限責任公司 用於鎢擦光應用之表面塗覆研磨顆粒
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
JP7783818B2 (ja) * 2020-07-27 2025-12-10 山口精研工業株式会社 研磨剤組成物、及び研磨剤組成物を用いる研磨方法
WO2022026355A1 (en) * 2020-07-28 2022-02-03 Cmc Materials, Inc. Cmp composition including anionic and cationic inhibitors
TWI824280B (zh) * 2020-08-24 2023-12-01 南韓商Ｓｋ恩普士股份有限公司 研磨墊及使用該研磨墊之用於製備半導體裝置的方法
WO2022060735A1 (en) * 2020-09-18 2022-03-24 Cmc Materials, Inc. Silica-based slurry for selective polishing of carbon-based films
US12497540B2 (en) * 2021-09-30 2025-12-16 Fujimi Incorporated Polishing composition and polishing method using the same
CN122122259A (zh) 2023-10-26 2026-05-29 巴斯夫欧洲公司 用于去除钨和电介质层的组合物和方法
CN122249521A (zh) 2023-11-21 2026-06-19 弗萨姆材料美国有限责任公司 用于化学机械平面化（cmp）抛光组合物的环境友好的杀生物剂
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
TW202613261A (zh) * 2024-05-29 2026-04-01 美商恩特葛瑞斯股份有限公司 用於碳基薄膜之選擇性拋光之以二氧化矽為主的漿料

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TW200720383A (en) * 2005-10-24 2007-06-01 3M Innovative Properties Co Polishing fluids and methods for CMP
TW201612285A (en) * 2014-06-25 2016-04-01 Cabot Microelectronics Corp Tungsten chemical-mechanical polishing composition

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Publication number Priority date Publication date Assignee Title
US20030040188A1 (en) * 2001-08-24 2003-02-27 Applied Materials, Inc. Method for dishing reduction and feature passivation in polishing processes
TW200720383A (en) * 2005-10-24 2007-06-01 3M Innovative Properties Co Polishing fluids and methods for CMP
TW201612285A (en) * 2014-06-25 2016-04-01 Cabot Microelectronics Corp Tungsten chemical-mechanical polishing composition

Also Published As

Publication number Publication date
JP2019036714A (ja) 2019-03-07
CN109382756A (zh) 2019-02-26
CN109382756B (zh) 2021-07-30
DE102018006078A1 (de) 2019-02-14
US20190051537A1 (en) 2019-02-14
US10600655B2 (en) 2020-03-24
KR102491258B1 (ko) 2023-01-20
FR3070021B1 (fr) 2022-06-24
FR3070021A1 (fr) 2019-02-15
KR20190017648A (ko) 2019-02-20
TW201910457A (zh) 2019-03-16
JP7171259B2 (ja) 2022-11-15

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