ATE405618T1 - Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung - Google Patents

Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung

Info

Publication number
ATE405618T1
ATE405618T1 AT00950734T AT00950734T ATE405618T1 AT E405618 T1 ATE405618 T1 AT E405618T1 AT 00950734 T AT00950734 T AT 00950734T AT 00950734 T AT00950734 T AT 00950734T AT E405618 T1 ATE405618 T1 AT E405618T1
Authority
AT
Austria
Prior art keywords
mechanical polishing
chemical
methods
polishing systems
metals
Prior art date
Application number
AT00950734T
Other languages
English (en)
Inventor
Shumin Wang
Kaufman Vlasta Brusic
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22527822&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE405618(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE405618T1 publication Critical patent/ATE405618T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT00950734T 1999-08-13 2000-07-26 Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung ATE405618T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14887899P 1999-08-13 1999-08-13

Publications (1)

Publication Number Publication Date
ATE405618T1 true ATE405618T1 (de) 2008-09-15

Family

ID=22527822

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00950734T ATE405618T1 (de) 1999-08-13 2000-07-26 Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung

Country Status (13)

Country Link
US (2) US6840971B2 (de)
EP (1) EP1218464B1 (de)
JP (2) JP2003507894A (de)
KR (1) KR20020026954A (de)
CN (1) CN1209430C (de)
AT (1) ATE405618T1 (de)
AU (1) AU6379500A (de)
CA (1) CA2378771A1 (de)
DE (1) DE60039996D1 (de)
HK (1) HK1046424A1 (de)
IL (1) IL147235A0 (de)
TW (1) TW483805B (de)
WO (1) WO2001012739A1 (de)

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US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
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US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
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JP6900366B2 (ja) * 2015-08-12 2021-07-07 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ コバルトを含む基板の研磨のための化学機械研磨（ｃｍｐ）組成物の使用方法
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TWI761921B (zh) * 2019-10-30 2022-04-21 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法

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Also Published As

Publication number Publication date
CN1209430C (zh) 2005-07-06
CN1370208A (zh) 2002-09-18
DE60039996D1 (de) 2008-10-02
US20050148187A1 (en) 2005-07-07
US7354530B2 (en) 2008-04-08
WO2001012739A1 (en) 2001-02-22
EP1218464B1 (de) 2008-08-20
JP2003507894A (ja) 2003-02-25
EP1218464A1 (de) 2002-07-03
JP5073961B2 (ja) 2012-11-14
HK1046424A1 (zh) 2003-01-10
US20030166337A1 (en) 2003-09-04
JP2006287244A (ja) 2006-10-19
US6840971B2 (en) 2005-01-11
CA2378771A1 (en) 2001-02-22
TW483805B (en) 2002-04-21
IL147235A0 (en) 2002-08-14
AU6379500A (en) 2001-03-13
KR20020026954A (ko) 2002-04-12

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