JP2006287244A - 化学機械的研磨系及びその使用方法 - Google Patents
化学機械的研磨系及びその使用方法 Download PDFInfo
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- JP2006287244A JP2006287244A JP2006131649A JP2006131649A JP2006287244A JP 2006287244 A JP2006287244 A JP 2006287244A JP 2006131649 A JP2006131649 A JP 2006131649A JP 2006131649 A JP2006131649 A JP 2006131649A JP 2006287244 A JP2006287244 A JP 2006287244A
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- chemical mechanical
- mechanical polishing
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- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 2
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 description 1
- JCEZOHLWDIONSP-UHFFFAOYSA-N 3-[2-[2-(3-aminopropoxy)ethoxy]ethoxy]propan-1-amine Chemical compound NCCCOCCOCCOCCCN JCEZOHLWDIONSP-UHFFFAOYSA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- HRYONLJVNGYIHG-UHFFFAOYSA-N CN(CCCCN(C)C)C.C=C.C=C.C=C.C=C Chemical compound CN(CCCCN(C)C)C.C=C.C=C.C=C.C=C HRYONLJVNGYIHG-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QUEDYRXQWSDKKG-UHFFFAOYSA-M [O-2].[O-2].[V+5].[OH-] Chemical compound [O-2].[O-2].[V+5].[OH-] QUEDYRXQWSDKKG-UHFFFAOYSA-M 0.000 description 1
- 125000003295 alanine group Chemical group N[C@@H](C)C(=O)* 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KQNZLOUWXSAZGD-UHFFFAOYSA-N benzylperoxymethylbenzene Chemical compound C=1C=CC=CC=1COOCC1=CC=CC=C1 KQNZLOUWXSAZGD-UHFFFAOYSA-N 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- ITZXULOAYIAYNU-UHFFFAOYSA-N cerium(4+) Chemical class [Ce+4] ITZXULOAYIAYNU-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N dimethylaminopropylamine Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【解決手段】複数の金属の層又は金属及び誘電体の層を有する基体を研磨するのに有益なα−アミノ酸含有化学機械研磨組成物及びスラリーとする。
【選択図】なし
Description
この例は、グリシンを含有する研磨スラリーと、α−アミノ酸としてアラニンを含有する本発明の研磨スラリーの性能を比較している。これらの研磨スラリーは、3.0wt%のアルミナ、2.0wt%の過酸化水素、及び下記の表1に示す成分を含有している。アルミナは、米国イリノイ州オーロラのCabot Microelectronics社が製造するSemi−Sperse(商標)W−A355であった。組成物の研磨結果も表1で示している。
いくつかの研磨試験を行って、銅除去速度に対するα−アミノ酸含有研磨組成物の影響を示している。研磨では、固体含有率3%でアルミナを使用した。これは、Cabot Microelectronics社の研摩スラリーSemi−Sperse(商標)W−A355から調製した。研磨は、例1で説明したのと同じ材料、装置及び条件を使用して行った。
α−アミノ酸含有研磨組成物の銅除去速度への影響を示す研磨試験に加えて、銅除去速度へのβ−アミノ酸の影響を評価した。研磨で使用した研磨材は、固体含有率が3%のアルミナであった。これは、米国イリノイ州オーロラのCabot Microelectronics社によるSemi−Sperse(商標)W−A355研磨スラリーから調製した。研磨は、例1及び2で説明したのと同じ材料、装置及び条件を使用して行った。
この例では、Mirra研磨装置(Applied Materials社)及び2つの研磨段階を使用して、単一のスラリーを試験した。ここで第1の段階は、MP(キャリア膜圧)が4psi(ポンド/平方インチ)、IP(キャリア管間(Intertube)圧力)が4psi、RRP(キャリア保持環圧力)が5psi、PS(定盤速度)が43rpm且つCS(キャリア速度)が37rpmであり、第2の段階では、それぞれMP、IP、RRP、PS及びCSがそれぞれ2、2、3、103及び97であった。スラリーは、0.6wt%のアラニン、0.06wt%のLupasol SKA、0.04wt%の1,2,4−トリアゾール、1wt%のH2O2、及び3wt%のアルミナを含有していた。スラリーのpHは7.7であった。研磨スラリーは、Cu/Taウェハーから4101Å/分の速度で銅を除去することができた。ウェハーのディッシッングは、10μmの構造寸法では613Åであり、50μmの構造寸法では913Åであった。0.5μmラインの1μm間隔アレー、すなわち0.05/1.0μmアレーでのエロージョンは190Åであった。
Claims (40)
- 少なくとも1種の酸化剤;及び
式H2N−CR1R2COOHの少なくとも1種のα−アミノ酸;
を含有する化学機械研磨系であって、R1及びR2の少なくとも一方が水素ではなく、且つR1及びR2がそれぞれ独立に、水素、並びに炭素原子数が1〜8の環状の、枝分かれした及び直鎖の部分であって、窒素含有置換基、酸素含有置換基、硫黄含有置換基及びそれらの混合から選択される1又は複数の置換基で置換された又は置換されていない部分からなる群より選択される、化学機械研磨系。 - 前記窒素含有置換基、酸素含有置換基及び硫黄含有置換基が、−COOH、−CONH2、−NH2、−S−、−OH、−SH及びそれらの混合から選択される、請求項1に記載の化学機械研磨系。
- 前記α−アミノ酸が、α−アラニン、アルギニン、アスパラギン、アスパラギン酸、シスチン、システイン、グルタミン、グルタミン酸、ヒスチジン、イソロイシン、ロイシン、リジン、メチオニン、フェニルアラニン、セリン、スレオニン、トリプトファン、チロシン、バリン及びそれらの混合からなる群より選択される、請求項1に記載の化学機械研磨系。
- 約0.05〜約10.0wt%の前記α−アミノ酸を含有する、請求項1に記載の化学機械研磨系。
- 前記α−アミノ酸がα−アラニンである、請求項1に記載の化学機械研磨系。
- 約0.05〜約10.0wt%のα−アラニンを含有する、請求項5に記載の化学機械研磨系。
- 約0.1〜約17.0wt%の前記少なくとも1種の酸化剤を含有する、請求項1に記載の化学機械研磨系。
- 約0.5〜約10.0wt%の前記少なくとも1種の酸化剤を含有する、請求項7に記載の化学機械研磨系。
- 前記少なくとも1種の酸化剤が過酸化水素である、請求項1に記載の化学機械研磨系。
- 化学機械研磨組成物が基体に結合した少なくとも1つの層を研磨する能力を抑制する少なくとも1種の停止化合物を含有し、この少なくとも1種の停止化合物がカチオン性の窒素含有化合物である、請求項1に記載の化学機械研磨系。
- 前記少なくとも1種の停止化合物が、第1アミン、第2アミン、第3アミン、第4アミン、オリゴマーアミン、オリゴマーイミン、オリゴマーアミド、オリゴマーイミド、ポリマーアミン、ポリマーイミン、ポリマーアミド、ポリマーイミド、アミノ酸、アミノアルコール、エーテルアミン、及びそれらの混合を含む化合物から選択される、請求項10に記載の化学機械研磨系。
- 前記少なくとも1種の停止化合物が、分子量約200〜100万以上のポリエチレンイミン;N4−アミン(N,N’−ビス−[3−アミノプロピル]エチレンジアミン);4,7,10−トリオキサデカン−1,13−ジアミン;3,3−ジメチル−4,4−ジアミノジシクロヘキシルメタン;2−フェニルエチルアミン;ポリエーテルアミン;エーテルアミン;N,N−ジメチルジプロピレントリアミン;3−[2−メトキシエトキシ]プロピルアミン;ジメチルアミノプロピルアミン;1,4−ビス(3−アミノプロピル)ピペラジン;リシン;イソホロンジアミン;ヘキサメチレンジアミン;N−シクロヘキシル−1,3−プロパンジアミン;N−(3−アミノプロピル)−1,3−プロパンジアミン;テトラエチレンペンタアミン;N,N,N’,N’−テトラメチル−1,4−ブタンジアミン;プロピルアミン;2−(2−アミノエトキシ)エタノール;1,3−ジアミノ−2−プロパノール;チオアミン:2−アミノ−1−ブタノール;ポリ[ビス(2−クロロエーテル)−アルト−1,3−ビス(3−ジメチルアミノ)プロピル];及びそれらの混合から選択される、請求項10に記載の化学機械研磨系。
- 少なくとも1種の不動態フィルム形成剤を更に含有し、この不動態フィルム形成剤が、活性官能基として5〜6員ヘテロ環の少なくとも1種の有機ヘテロ環を含み、少なくとも1つの環が窒素原子を有する、請求項1に記載の化学機械研磨系。
- 前記少なくとも1種の不動態フィルム形成剤が、ベンゾトリアゾール、トリアゾール、ベンズイミダゾール及びそれらの混合から選択される、請求項13に記載の化学機械研磨系。
- 少なくとも1種の金属酸化物研磨材を更に含有する、請求項1に記載の化学機械研磨系。
- 前記金属酸化物研磨材が、アルミナ、セリア、ゲルマニア、シリカ、チタニア、ジルコニア、それらの複合及びそれらの混合から選択される約0.1〜約30wt%の金属酸化物研磨材である、請求項15に記載の化学機械研磨系。
- 研磨パッドを更に含む、請求項1に記載の化学機械研磨系。
- 前記研磨パッドが、この研磨パッド上又はその中に埋め込まれた研磨材を有する、請求項17に記載の化学機械研磨系。
- 約0.5〜約10.0wt%の過酸化水素;及び
約0.05〜約10.0wt%のアラニン;
を含有する、化学機械研磨組成物。 - 約0.1〜約30.0wt%のアルミナを含有する、請求項19に記載の化学機械研磨組成物。
- 約0.5〜約10.0wt%の少なくとも1種の酸化剤;
約0.05〜約10.0wt%のアラニン;及び
約0.01〜約5.0wt%の少なくとも1種の窒素含有化合物;
を含有する化学機械研磨組成物であって、前記窒素含有化合物が、基体に結合した少なくとも1つの層をこの化学機械研磨組成物が研磨する能力を抑制し、前記少なくとも1種の窒素含有化合物がカチオン性である、化学機械研磨組成物。 - 約0.1〜約30.0wt%の少なくとも1種の研磨材を含有する、請求項21に記載の化学機械研磨組成物。
- a.化学機械研磨組成物を、研磨パッドと組み合わされた基体に適用すること、ここでこの化学機械研磨組成物は、酸化剤と、式H2N−CR1R2COOHの少なくとも1種のα−アミノ酸を含有し、R1及びR2の少なくとも一方は水素ではなく、且つR1及びR2はそれぞれ独立に、水素、並びに炭素原子数が1〜8の環状の、枝分かれした及び直鎖の部分であって、窒素含有置換基、酸素含有置換基、硫黄含有置換基及びそれらの混合から選択される1又は複数の置換基で置換された又は置換されていない部分からなる群より選択される;並びに
b.第1の金属層の一部が基体から除去されて部分的に研磨された基体ができるまで、前記化学機械研磨組成物及び研磨パッドで前記第1の金属層を研磨すること、
を含む、第1の金属層及びこの第1の金属層の下の第2の層を有する基体を研磨する方法。 - 前記窒素含有置換基、酸素含有置換基及び硫黄含有置換基が、−COOH、−CONH2、−NH2、−S−、−OH、−SH及びそれらの混合から選択される、請求項23に記載の方法。
- 前記α−アミノ酸が、アラニン、アルギニン、アスパラギン、アスパラギン酸、シスチン、システイン、グルタミン、グルタミン酸、ヒスチジン、イソロイシン、ロイシン、リジン、メチオニン、フェニルアラニン、セリン、スレオニン、トリプトファン、チロシン、バリン及びそれらの混合から選択される、請求項23に記載の方法。
- 前記組成物の約0.05〜約10.0wt%の量で前記α−アミノ酸が存在する、請求項23に記載の方法。
- 前記α−アミノ酸がα−アラニンである、請求項23に記載の方法。
- 約0.05〜約10.0wt%のα−アラニンを含有する、請求項27に記載の方法。
- 約0.1〜約17.0wt%の前記酸化剤を含有する、請求項23に記載の方法。
- 約0.5〜約10.0wt%の前記酸化剤を含有する、請求項29に記載の方法。
- 前記酸化剤が過酸化水素である、請求項23に記載の方法。
- 化学機械研磨組成物が、活性官能基として5〜6員ヘテロ環の少なくとも1つの有機ヘテロ環を含む少なくとも1種の不動態フィルム形成剤を含有し、前記少なくとも1つの環が窒素原子を有する、請求項23に記載の方法。
- 前記少なくとも1種の不動態フィルム形成剤が、ベンゾトリアゾール、トリアゾール、ベンズイミダゾール及びそれらの混合から選択される、請求項32に記載の方法。
- 前記化学機械研磨組成物が少なくとも1種の金属酸化物研磨材を含有する、請求項23に記載の方法。
- 前記金属酸化物研磨材が、アルミナ、セリア、ゲルマニア、シリカ、チタニア、ジルコニア、及びそれらの混合から選択される約0.1〜約30wt%の金属酸化物研磨材である、請求項34に記載の方法。
- 前記化学機械研磨組成物が、基体に結合した少なくとも1つの層をこの化学機械研磨組成物が研磨する能力を抑制する少なくとも1種の停止化合物を含有し、この少なくとも1種の停止化合物がカチオン性の窒素含有化合物である、請求項23に記載の方法。
- 前記少なくとも1種の停止化合物が、第1アミン、第2アミン、第3アミン、第4アミン、オリゴマーアミン、オリゴマーイミン、オリゴマーアミド、オリゴマーイミド、ポリマーアミン、ポリマーイミン、ポリマーアミド、ポリマーイミド、アミノ酸、アミノアルコール、エーテルアミン、及びそれらの混合を含む化合物から選択される、請求項36に記載の方法。
- 前記少なくとも1種の停止化合物が、分子量約200〜100万以上のポリエチレンイミン;N4−アミン(N,N’−ビス−[3−アミノプロピル]エチレンジアミン);4,7,10−トリオキサデカン−1,13−ジアミン;3,3−ジメチル−4,4−ジアミノジシクロヘキシルメタン;2−フェニルエチルアミン;ポリエーテルアミン;エーテルアミン;N,N−ジメチルジプロピレントリアミン;3−[2−メトキシエトキシ]プロピルアミン;ジメチルアミノプロピルアミン;1,4−ビス(3−アミノプロピル)ピペラジン;リシン;イソホロンジアミン;ヘキサメチレンジアミン;N−シクロヘキシル−1,3−プロパンジアミン;N−(3−アミノプロピル)−1,3−プロパンジアミン;テトラエチレンペンタアミン;N,N,N’,N’−テトラメチル−1,4−ブタンジアミン;プロピルアミン;2−(2−アミノエトキシ)エタノール;1,3−ジアミノ−2−プロパノール;チオアミン:2−アミノ−1−ブタノール;ポリ[ビス(2−クロロエーテル)−アルト−1,3−ビス(3−ジメチルアミノ)プロピル];及びそれらの混合から選択される、請求項36に記載の方法。
- 前記第2の層が、酸化物層を覆う付着層であり、前記少なくとも1種の停止化合物が、この付着層及び酸化物層の研磨を抑制する、請求項36に記載の方法。
- 前記研磨パッドが、この研磨パッド上又はその中に埋め込まれた砥粒を有する、請求項23に記載の方法。
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US6136714A (en) * | 1998-12-17 | 2000-10-24 | Siemens Aktiengesellschaft | Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor |
-
2000
- 2000-07-26 EP EP00950734A patent/EP1218464B1/en not_active Expired - Lifetime
- 2000-07-26 IL IL14723500A patent/IL147235A0/xx unknown
- 2000-07-26 CA CA002378771A patent/CA2378771A1/en not_active Abandoned
- 2000-07-26 WO PCT/US2000/020368 patent/WO2001012739A1/en active Application Filing
- 2000-07-26 AU AU63795/00A patent/AU6379500A/en not_active Abandoned
- 2000-07-26 JP JP2001517627A patent/JP2003507894A/ja active Pending
- 2000-07-26 DE DE60039996T patent/DE60039996D1/de not_active Expired - Lifetime
- 2000-07-26 CN CNB008116385A patent/CN1209430C/zh not_active Expired - Lifetime
- 2000-07-26 AT AT00950734T patent/ATE405618T1/de active
- 2000-07-26 KR KR1020027001012A patent/KR20020026954A/ko not_active Application Discontinuation
- 2000-08-11 TW TW089116243A patent/TW483805B/zh not_active IP Right Cessation
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2002
- 2002-11-04 HK HK02108004.5A patent/HK1046424A1/zh unknown
- 2002-12-19 US US10/324,634 patent/US6840971B2/en not_active Expired - Lifetime
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2005
- 2005-01-10 US US11/033,068 patent/US7354530B2/en not_active Expired - Lifetime
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2006
- 2006-05-10 JP JP2006131649A patent/JP5073961B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000160141A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014080614A (ja) * | 2012-10-16 | 2014-05-08 | Uwiz Technology Co Ltd | 洗浄剤組成物及びそれを用いる洗浄方法 |
JP2014194016A (ja) * | 2013-03-12 | 2014-10-09 | Air Products And Chemicals Inc | タングステン含有基材のための化学機械平坦化 |
Also Published As
Publication number | Publication date |
---|---|
US20030166337A1 (en) | 2003-09-04 |
ATE405618T1 (de) | 2008-09-15 |
JP2003507894A (ja) | 2003-02-25 |
JP5073961B2 (ja) | 2012-11-14 |
EP1218464B1 (en) | 2008-08-20 |
TW483805B (en) | 2002-04-21 |
CN1370208A (zh) | 2002-09-18 |
WO2001012739A1 (en) | 2001-02-22 |
KR20020026954A (ko) | 2002-04-12 |
IL147235A0 (en) | 2002-08-14 |
US20050148187A1 (en) | 2005-07-07 |
EP1218464A1 (en) | 2002-07-03 |
DE60039996D1 (de) | 2008-10-02 |
US6840971B2 (en) | 2005-01-11 |
HK1046424A1 (zh) | 2003-01-10 |
CN1209430C (zh) | 2005-07-06 |
CA2378771A1 (en) | 2001-02-22 |
US7354530B2 (en) | 2008-04-08 |
AU6379500A (en) | 2001-03-13 |
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