JP7171259B2 - タングステンのための化学的機械的研磨法 - Google Patents

タングステンのための化学的機械的研磨法 Download PDF

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Publication number
JP7171259B2
JP7171259B2 JP2018115479A JP2018115479A JP7171259B2 JP 7171259 B2 JP7171259 B2 JP 7171259B2 JP 2018115479 A JP2018115479 A JP 2018115479A JP 2018115479 A JP2018115479 A JP 2018115479A JP 7171259 B2 JP7171259 B2 JP 7171259B2
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JP
Japan
Prior art keywords
mechanical polishing
chemical mechanical
ppm
tungsten
arginine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2018115479A
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English (en)
Japanese (ja)
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JP2019036714A5 (enExample
JP2019036714A (ja
Inventor
ジア－デ・ペン
リン－チェン・ホ
シン・スー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Publication of JP2019036714A5 publication Critical patent/JP2019036714A5/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2018115479A 2017-08-10 2018-06-18 タングステンのための化学的機械的研磨法 Active JP7171259B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762543416P 2017-08-10 2017-08-10
US62/543,416 2017-08-10

Publications (3)

Publication Number Publication Date
JP2019036714A JP2019036714A (ja) 2019-03-07
JP2019036714A5 JP2019036714A5 (enExample) 2021-09-30
JP7171259B2 true JP7171259B2 (ja) 2022-11-15

Family

ID=65084543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018115479A Active JP7171259B2 (ja) 2017-08-10 2018-06-18 タングステンのための化学的機械的研磨法

Country Status (7)

Country Link
US (1) US10600655B2 (enExample)
JP (1) JP7171259B2 (enExample)
KR (1) KR102491258B1 (enExample)
CN (1) CN109382756B (enExample)
DE (1) DE102018006078A1 (enExample)
FR (1) FR3070021B1 (enExample)
TW (1) TWI837097B (enExample)

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US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
WO2020214662A1 (en) * 2019-04-17 2020-10-22 Cabot Microelectronics Corporation Surface coated abrasive particles for tungsten buff applications
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
US20230312983A1 (en) * 2020-07-27 2023-10-05 Yamaguchi Seiken Kogyo Co., Ltd. Polishing composition, and polishing method using polishing composition
US12234382B2 (en) 2020-07-28 2025-02-25 Cmc Materials Llc CMP composition including anionic and cationic inhibitors
TWI824280B (zh) * 2020-08-24 2023-12-01 南韓商Ｓｋ恩普士股份有限公司 研磨墊及使用該研磨墊之用於製備半導體裝置的方法
US11802220B2 (en) 2020-09-18 2023-10-31 Cmc Materials, Inc. Silica-based slurry for selective polishing of carbon-based films
US12497540B2 (en) * 2021-09-30 2025-12-16 Fujimi Incorporated Polishing composition and polishing method using the same
TW202523818A (zh) 2023-10-26 2025-06-16 德商巴斯夫歐洲公司 用於去除鎢和介電質層的組成物和方法
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
US20250368859A1 (en) * 2024-05-29 2025-12-04 Entegris, Inc. Silica-based slurry for selective polishing of carbon-based films

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JP2005118982A (ja) 2003-08-29 2005-05-12 Rohm & Haas Electronic Materials Cmp Holdings Inc ニッケルベースの被膜を平坦化するための粒子を含まない研磨流体
JP2006060205A (ja) 2004-08-18 2006-03-02 Samsung Electronics Co Ltd スラリー組成物、その製造方法、及びこれを用いた加工物の研磨方法
JP2008124222A (ja) 2006-11-10 2008-05-29 Fujifilm Corp 研磨液
US20150376462A1 (en) 2014-06-25 2015-12-31 Cabot Microelectronics Corporation Tungsten chemical-mechanical polishing composition
JP2016043479A (ja) 2014-08-22 2016-04-04 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ポリウレタン研磨パッド
JP2016048777A (ja) 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2016167580A (ja) 2015-02-12 2016-09-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンケミカルメカニカル研磨におけるディッシング低減

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KR101293790B1 (ko) * 2010-12-31 2013-08-06 제일모직주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
EP2742103B1 (en) * 2011-08-01 2016-09-21 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-xGex MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
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US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
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KR102501107B1 (ko) 2014-06-25 2023-02-17 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005118982A (ja) 2003-08-29 2005-05-12 Rohm & Haas Electronic Materials Cmp Holdings Inc ニッケルベースの被膜を平坦化するための粒子を含まない研磨流体
JP2006060205A (ja) 2004-08-18 2006-03-02 Samsung Electronics Co Ltd スラリー組成物、その製造方法、及びこれを用いた加工物の研磨方法
JP2008124222A (ja) 2006-11-10 2008-05-29 Fujifilm Corp 研磨液
US20150376462A1 (en) 2014-06-25 2015-12-31 Cabot Microelectronics Corporation Tungsten chemical-mechanical polishing composition
JP2016048777A (ja) 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2016043479A (ja) 2014-08-22 2016-04-04 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ポリウレタン研磨パッド
JP2016167580A (ja) 2015-02-12 2016-09-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンケミカルメカニカル研磨におけるディッシング低減

Also Published As

Publication number Publication date
KR20190017648A (ko) 2019-02-20
US10600655B2 (en) 2020-03-24
JP2019036714A (ja) 2019-03-07
KR102491258B1 (ko) 2023-01-20
CN109382756A (zh) 2019-02-26
TW201910457A (zh) 2019-03-16
US20190051537A1 (en) 2019-02-14
FR3070021A1 (fr) 2019-02-15
CN109382756B (zh) 2021-07-30
TWI837097B (zh) 2024-04-01
FR3070021B1 (fr) 2022-06-24
DE102018006078A1 (de) 2019-02-14

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