JP6721704B2 - 半導体基材をケミカルメカニカル研磨する方法 - Google Patents
半導体基材をケミカルメカニカル研磨する方法 Download PDFInfo
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- JP6721704B2 JP6721704B2 JP2018546432A JP2018546432A JP6721704B2 JP 6721704 B2 JP6721704 B2 JP 6721704B2 JP 2018546432 A JP2018546432 A JP 2018546432A JP 2018546432 A JP2018546432 A JP 2018546432A JP 6721704 B2 JP6721704 B2 JP 6721704B2
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- chemical mechanical
- mechanical polishing
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- polishing composition
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明の基材研磨法は、直鎖状ポリアルキレンイミンポリマーと、正の表面電荷を有するコロイダルシリカ砥粒との相乗的組み合わせを含むケミカルメカニカル研磨組成物を1〜4の系pHで使用するものである。驚くべきことには、1〜4の系pHにおいて、直鎖状ポリアルキレンイミンポリマーと、正の表面電荷を有するコロイダルシリカ砥粒との相乗的組み合わせが、チタンの除去を有意に減らしつつ、タングステン及び窒化チタンの速やかな除去を提供するということが見出されたのである。
ケミカルメカニカル研磨組成物調製
比較例C1〜C5及び実施例1のケミカルメカニカル研磨組成物を、表1に記された量の成分を合わせ(残余は脱イオン水)、組成物のpHを水酸化カリウムによって表1に記された最終pHに調整することにより調製した。
ケミカルメカニカル研磨除去速度実験
除去速度研磨試験は、比較例C1〜C5及び実施例1に従って調製したケミカルメカニカル研磨組成物をそれぞれ使用した比較例PC1〜PC5及び実施例P1において実施した。その研磨除去速度実験は、Applied Materialsの200mm Mirra(登録商標)研磨機上に設置された200mmブランケットウェーハに対して実施した。その研磨除去速度実験は、SEMATECH SVTC製200mmブランケット1kテトラエチルオルトケイ酸塩(TEOS)シートウェーハ、SEMATECH SVTCから入手可能なタングステン(W)ブランケットウェーハ、SEMATECH SVTCから入手可能なチタン(Ti)ブランケットウェーハ及びSEMATECH SVTCから入手可能な窒化チタン(TiN)ブランケットウェーハに対して実施した。すべての研磨実験は、SP2310サブパッドと合わせたIC1010(商標)ポリウレタン研磨パッド(Rohm and Haas Electronic Materials CMP Inc.から市販)を使用し、21.4kPa(3.1psi)のダウンフォース、125mL/minのケミカルメカニカル研磨組成物流量、80rpmのテーブル回転速度及び81rpmのキャリヤ回転速度で60秒の研磨時間で実施した。ダイアモンドパッドコンディショナPDA33A−D(Kinik Companyから市販)を使用して研磨パッドをコンディショニングした。その研磨パッドを、コンディショナを用い、9ポンド(4.1kg)のコンディショニングダウンフォースを使用して15分間、次いで7ポンド(3.18kg)のコンディショニングダウンフォースを使用してさらに15分間慣らし運転した。その研磨パッドは更に、研磨実験と研磨実験との間に7ポンド(3.18kg)のダウンフォースを使用して24秒間、研磨前にその場以外でコンディショニングした。TEOS除去速度は、研磨前後の膜厚をKLA−Tencor FX200メトロジーツールを使用して計測することにより求めた。タングステン(W)、チタン(Ti)及び窒化チタン(TiN)除去速度は、Jordan Valley JVX−5200Tメトロジーツールを使用して求めた。除去速度実験の結果を表2に示す。
Claims (2)
- 基材を研磨する方法であって、
露出した窒化チタン(TiN)特徴及び露出したチタン(Ti)特徴を有する基材を提供する工程;
初期成分として、
水;
酸化剤;
直鎖状ポリアルキレンイミンポリマー;
正の表面電荷を有するコロイダルシリカ砥粒;
カルボン酸;
鉄イオンの源;及び
任意選択的pH調整剤
を含み、1〜4のpHを有するケミカルメカニカル研磨組成物を提供する工程;
研磨面を有するケミカルメカニカル研磨パッドを提供する工程;
前記ケミカルメカニカル研磨パッドと前記基材との間の界面において動的接触を生じさせる工程;及び
前記ケミカルメカニカル研磨組成物を、前記ケミカルメカニカル研磨パッドの前記研磨面上へ、前記ケミカルメカニカル研磨パッドと前記基材との間の前記界面又はその近傍において施用する工程
を含み;
前記露出した窒化チタン(TiN)特徴の少なくとも一部及び前記露出したチタン(Ti)特徴の少なくとも一部が前記基材から研磨除去され;
前記提供されるケミカルメカニカル研磨組成物が、200mm研磨機上、毎分80回転のプラテン速度、毎分81回転のキャリヤ速度、125mL/minのケミカルメカニカル研磨組成物流量、21.4kPaの公称ダウンフォースで≦24Å/minのチタン除去速度及び≧2,400Å/minの窒化チタン除去速度を有し;そして、前記ケミカルメカニカル研磨パッドが、ポリマー中空コア微粒子を含有するポリウレタン研磨層及びポリウレタン含浸不織布サブパッドを含む、方法。 - 前記提供されるケミカルメカニカル研磨組成物が、初期成分として、
前記水;
前記酸化剤;
前記直鎖状ポリアルキレンイミンポリマー;
前記コロイダルシリカ砥粒;
前記カルボン酸;
硝酸第二鉄である前記鉄イオンの源;及び
前記任意選択的pH調整剤
からなる、請求項1記載の方法。
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US5756398A (en) * | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
IL147235A0 (en) * | 1999-08-13 | 2002-08-14 | Cabot Microelectronics Corp | Chemical mechanical polishing systems and methods for their use |
WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
US6855266B1 (en) | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
US20040007690A1 (en) * | 2002-07-12 | 2004-01-15 | Cabot Microelectronics Corp. | Methods for polishing fiber optic connectors |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
DE102004016600A1 (de) * | 2004-04-03 | 2005-10-27 | Degussa Ag | Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer |
US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
KR100614773B1 (ko) * | 2004-12-28 | 2006-08-22 | 삼성전자주식회사 | 화학 기계적 연마 방법 |
US7311856B2 (en) * | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
FR2900587B1 (fr) * | 2006-05-02 | 2008-12-26 | Kemesys | Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche |
US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
US20090078583A1 (en) * | 2007-01-22 | 2009-03-26 | Itsuki Kobata | Electrochemical mechanical polishing method and electrochemical mechanical polishing apparatus |
US7820068B2 (en) * | 2007-02-21 | 2010-10-26 | Houghton Technical Corp. | Chemical assisted lapping and polishing of metals |
US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
US20150104940A1 (en) * | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
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