SG11201502768UA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201502768UA
SG11201502768UA SG11201502768UA SG11201502768UA SG11201502768UA SG 11201502768U A SG11201502768U A SG 11201502768UA SG 11201502768U A SG11201502768U A SG 11201502768UA SG 11201502768U A SG11201502768U A SG 11201502768UA SG 11201502768U A SG11201502768U A SG 11201502768UA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201502768UA
Inventor
Shogo Onishi
Yasuto Ishida
Tatsuhiko Hirano
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201502768UA publication Critical patent/SG11201502768UA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • C09K3/1445Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
SG11201502768UA 2012-11-02 2013-10-29 Polishing composition SG11201502768UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012243126 2012-11-02
PCT/JP2013/079267 WO2014069457A1 (en) 2012-11-02 2013-10-29 Polishing composition

Publications (1)

Publication Number Publication Date
SG11201502768UA true SG11201502768UA (en) 2015-05-28

Family

ID=50627360

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201502768UA SG11201502768UA (en) 2012-11-02 2013-10-29 Polishing composition

Country Status (8)

Country Link
US (1) US9486892B2 (en)
JP (1) JPWO2014069457A1 (en)
KR (1) KR20150083085A (en)
CN (1) CN104755580A (en)
DE (1) DE112013005264T5 (en)
SG (1) SG11201502768UA (en)
TW (1) TW201422798A (en)
WO (1) WO2014069457A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG190765A1 (en) * 2010-12-24 2013-07-31 Hitachi Chemical Co Ltd Polishing liquid and method for polishing substrate using the polishing liquid
JP6377726B2 (en) * 2013-05-15 2018-08-22 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Method of using chemical mechanical polishing composition containing polyethyleneimine
KR102456079B1 (en) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 Cleaning composition for removing oxide and method of cleaning using the same
JP6604061B2 (en) * 2015-07-10 2019-11-13 日立化成株式会社 Polishing liquid and polishing method for CMP
JP6900366B2 (en) * 2015-08-12 2021-07-07 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se How to use a chemical mechanical polishing (CMP) composition for polishing substrates containing cobalt
US10703936B2 (en) * 2016-03-30 2020-07-07 Fujimi Incorporated Polishing composition
WO2017186283A1 (en) * 2016-04-27 2017-11-02 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
CN106010297B (en) * 2016-06-20 2018-07-31 上海新安纳电子科技有限公司 A kind of preparation method of alumina polishing solution
JP6890656B2 (en) * 2017-02-28 2021-06-18 富士フイルム株式会社 Polishing liquid, polishing liquid manufacturing method, polishing liquid stock solution, polishing liquid stock solution container, chemical mechanical polishing method
JP6901297B2 (en) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド Polishing composition
US11655394B2 (en) * 2017-08-09 2023-05-23 Resonac Corporation Polishing solution and polishing method
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
KR102634300B1 (en) * 2017-11-30 2024-02-07 솔브레인 주식회사 Slurry composition for polishing and method for polishing semiconductor thin film of high aspect raio
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10763119B2 (en) 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
CN110791254B (en) * 2019-11-06 2022-02-11 浙江博莱特制冷设备有限公司 Valve plate grinding fluid for refrigeration compressor
JP6780800B1 (en) * 2020-04-09 2020-11-04 信越半導体株式会社 Wafer polishing method and polishing equipment
WO2022026355A1 (en) * 2020-07-28 2022-02-03 Cmc Materials, Inc. Cmp composition including anionic and cationic inhibitors
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
WO2024064127A1 (en) * 2022-09-22 2024-03-28 Cmc Materials Llc Tungsten cmp composition including a sulfur containing anionic surfactant

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JP3397501B2 (en) 1994-07-12 2003-04-14 株式会社東芝 Abrasive and polishing method
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
JP4012180B2 (en) 2004-08-06 2007-11-21 株式会社東芝 CMP slurry, polishing method, and semiconductor device manufacturing method
JP5314839B2 (en) * 2006-08-02 2013-10-16 株式会社フジミインコーポレーテッド Polishing composition and polishing method
SG139699A1 (en) 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
JP5178121B2 (en) * 2007-09-28 2013-04-10 富士フイルム株式会社 Polishing liquid and polishing method
JP5314329B2 (en) * 2008-06-12 2013-10-16 富士フイルム株式会社 Polishing liquid
WO2010098278A1 (en) 2009-02-24 2010-09-02 ニッタ・ハース株式会社 Composition for metal film polishing
JP2011171446A (en) 2010-02-17 2011-09-01 Hitachi Chem Co Ltd Polishing liquid for cmp and polishing method using the same

Also Published As

Publication number Publication date
US20150344738A1 (en) 2015-12-03
JPWO2014069457A1 (en) 2016-09-08
CN104755580A (en) 2015-07-01
DE112013005264T5 (en) 2015-09-24
KR20150083085A (en) 2015-07-16
WO2014069457A1 (en) 2014-05-08
TW201422798A (en) 2014-06-16
US9486892B2 (en) 2016-11-08

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