JP2019110286A5 - - Google Patents

Download PDF

Info

Publication number
JP2019110286A5
JP2019110286A5 JP2018175755A JP2018175755A JP2019110286A5 JP 2019110286 A5 JP2019110286 A5 JP 2019110286A5 JP 2018175755 A JP2018175755 A JP 2018175755A JP 2018175755 A JP2018175755 A JP 2018175755A JP 2019110286 A5 JP2019110286 A5 JP 2019110286A5
Authority
JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
per minute
revolutions per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018175755A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019110286A (ja
JP7207918B2 (ja
Filing date
Publication date
Priority claimed from US15/710,898 external-priority patent/US10377921B2/en
Application filed filed Critical
Publication of JP2019110286A publication Critical patent/JP2019110286A/ja
Publication of JP2019110286A5 publication Critical patent/JP2019110286A5/ja
Application granted granted Critical
Publication of JP7207918B2 publication Critical patent/JP7207918B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018175755A 2017-09-21 2018-09-20 コバルト用ケミカルメカニカルポリッシング方法 Active JP7207918B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/710,898 2017-09-21
US15/710,898 US10377921B2 (en) 2017-09-21 2017-09-21 Chemical mechanical polishing method for cobalt

Publications (3)

Publication Number Publication Date
JP2019110286A JP2019110286A (ja) 2019-07-04
JP2019110286A5 true JP2019110286A5 (enExample) 2022-12-06
JP7207918B2 JP7207918B2 (ja) 2023-01-18

Family

ID=65719934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018175755A Active JP7207918B2 (ja) 2017-09-21 2018-09-20 コバルト用ケミカルメカニカルポリッシング方法

Country Status (5)

Country Link
US (1) US10377921B2 (enExample)
JP (1) JP7207918B2 (enExample)
KR (1) KR102459546B1 (enExample)
CN (1) CN109545736B (enExample)
TW (1) TWI838343B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3714012B1 (en) * 2017-11-22 2023-01-11 Basf Se Chemical mechanical polishing composition
US10947413B2 (en) * 2019-03-29 2021-03-16 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US10787592B1 (en) * 2019-05-16 2020-09-29 Rohm And Haas Electronic Materials Cmp Holdings, I Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子(上海)有限公司 一种化学机械抛光液
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Jsr株式会社 化学機械研磨用水系分散体
JP2011003665A (ja) 2009-06-17 2011-01-06 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
JP5141792B2 (ja) * 2010-06-29 2013-02-13 日立化成工業株式会社 Cmp研磨液及び研磨方法
CN102304327A (zh) 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
US20130045599A1 (en) * 2011-08-15 2013-02-21 Rohm and Electronic Materials CMP Holdings, Inc. Method for chemical mechanical polishing copper
US20130186850A1 (en) 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
US20140011362A1 (en) 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
SG11201506102TA (en) 2013-02-28 2015-09-29 Fujimi Inc Polishing slurry for cobalt removal
JP6156630B2 (ja) 2013-05-24 2017-07-05 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
EP3112436A4 (en) * 2014-02-26 2017-02-22 Fujimi Incorporated Polishing composition
US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
WO2016008896A1 (en) 2014-07-15 2016-01-21 Basf Se A chemical mechanical polishing (cmp) composition
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US9735030B2 (en) 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
EP3210238B1 (en) 2014-10-21 2019-06-26 Cabot Microelectronics Corporation Cobalt polishing accelerators
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
TWI775722B (zh) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光(cmp)組成物用於拋光含鈷及/或鈷合金之基材的用途
CN104830235B (zh) 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
WO2017025536A1 (en) 2015-08-12 2017-02-16 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates
US9528030B1 (en) 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing

Similar Documents

Publication Publication Date Title
JP2019110286A5 (enExample)
JP2019036714A5 (enExample)
JP2010114446A5 (enExample)
JP2019057710A5 (enExample)
TWI398473B (zh) 用於拋光在鑲嵌結構中之鋁/銅及鈦之組合物
JP2009543337A5 (enExample)
JP5251877B2 (ja) 磁気ディスク用ガラス基板の製造方法
TWI431678B (zh) 拋光半導體晶圓邊緣的方法
JP5233621B2 (ja) 磁気ディスク用ガラス基板及びその製造方法。
CN101450463B (zh) 一种孔隙自生成超硬磨料磨具的修整方法
JP2011508462A5 (enExample)
US20020197935A1 (en) Method of polishing a substrate
JP2012235111A5 (enExample)
JP2021169604A5 (enExample)
TW200513520A (en) Method for manufacturing substrate
JP2012235110A5 (enExample)
CN108838745A (zh) 一种钇铝石榴石晶体的高效化学机械抛光方法
TW568813B (en) Polishing agent, method of producing this agent, and method of polishing
JP2017063173A5 (enExample)
JP2020068378A5 (enExample)
JP2011205097A5 (enExample)
JPH11285961A (ja) 研磨パッド及び研磨方法
JP6054341B2 (ja) 研磨用砥粒とその製造方法と研磨方法と研磨部材とスラリー
TWI446428B (zh) 用於拋光半導體晶圓的方法
JP6330628B2 (ja) ガラス基板の製造方法