CN109545736B - 用于钴的化学机械抛光方法 - Google Patents

用于钴的化学机械抛光方法 Download PDF

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Publication number
CN109545736B
CN109545736B CN201810954807.7A CN201810954807A CN109545736B CN 109545736 B CN109545736 B CN 109545736B CN 201810954807 A CN201810954807 A CN 201810954807A CN 109545736 B CN109545736 B CN 109545736B
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CN
China
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
substrate
cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810954807.7A
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English (en)
Chinese (zh)
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CN109545736A (zh
Inventor
M·G·瑟瓦纳亚格姆
H·王
M·万哈尼赫姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication date
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Publication of CN109545736A publication Critical patent/CN109545736A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201810954807.7A 2017-09-21 2018-08-21 用于钴的化学机械抛光方法 Active CN109545736B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/710,898 US10377921B2 (en) 2017-09-21 2017-09-21 Chemical mechanical polishing method for cobalt
US15/710898 2017-09-21

Publications (2)

Publication Number Publication Date
CN109545736A CN109545736A (zh) 2019-03-29
CN109545736B true CN109545736B (zh) 2023-09-29

Family

ID=65719934

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810954807.7A Active CN109545736B (zh) 2017-09-21 2018-08-21 用于钴的化学机械抛光方法

Country Status (5)

Country Link
US (1) US10377921B2 (enExample)
JP (1) JP7207918B2 (enExample)
KR (1) KR102459546B1 (enExample)
CN (1) CN109545736B (enExample)
TW (1) TWI838343B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11993729B2 (en) * 2017-11-22 2024-05-28 Basf Se Chemical mechanical polishing composition
US10947413B2 (en) * 2019-03-29 2021-03-16 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US10787592B1 (en) * 2019-05-16 2020-09-29 Rohm And Haas Electronic Materials Cmp Holdings, I Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102950537A (zh) * 2011-08-15 2013-03-06 罗门哈斯电子材料Cmp控股股份有限公司 用来化学机械抛光铜的方法
CN105295737A (zh) * 2014-07-25 2016-02-03 气体产品与化学公司 含钴衬底的化学机械抛光(cmp)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2011003665A (ja) 2009-06-17 2011-01-06 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
JP5141792B2 (ja) * 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
CN102304327A (zh) 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
US20130186850A1 (en) 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
US20140011362A1 (en) 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
SG11201506102TA (en) 2013-02-28 2015-09-29 Fujimi Inc Polishing slurry for cobalt removal
JP6156630B2 (ja) 2013-05-24 2017-07-05 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JPWO2015129342A1 (ja) * 2014-02-26 2017-03-30 株式会社フジミインコーポレーテッド 研磨用組成物
US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
WO2016008896A1 (en) 2014-07-15 2016-01-21 Basf Se A chemical mechanical polishing (cmp) composition
US9735030B2 (en) 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
KR102538575B1 (ko) 2014-10-21 2023-06-01 씨엠씨 머티리얼즈 엘엘씨 코발트 연마 가속화제
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
TWI775722B (zh) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN104830235B (zh) 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
WO2017025536A1 (en) 2015-08-12 2017-02-16 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates
US9528030B1 (en) 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102950537A (zh) * 2011-08-15 2013-03-06 罗门哈斯电子材料Cmp控股股份有限公司 用来化学机械抛光铜的方法
CN105295737A (zh) * 2014-07-25 2016-02-03 气体产品与化学公司 含钴衬底的化学机械抛光(cmp)

Also Published As

Publication number Publication date
CN109545736A (zh) 2019-03-29
KR102459546B1 (ko) 2022-10-26
US10377921B2 (en) 2019-08-13
TWI838343B (zh) 2024-04-11
TW201915133A (zh) 2019-04-16
US20190085206A1 (en) 2019-03-21
JP2019110286A (ja) 2019-07-04
JP7207918B2 (ja) 2023-01-18
KR20190033432A (ko) 2019-03-29

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.