JP6094541B2 - ゲルマニウムウェーハの研磨方法 - Google Patents
ゲルマニウムウェーハの研磨方法 Download PDFInfo
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- JP6094541B2 JP6094541B2 JP2014152784A JP2014152784A JP6094541B2 JP 6094541 B2 JP6094541 B2 JP 6094541B2 JP 2014152784 A JP2014152784 A JP 2014152784A JP 2014152784 A JP2014152784 A JP 2014152784A JP 6094541 B2 JP6094541 B2 JP 6094541B2
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- polishing
- germanium
- hydrogen peroxide
- germanium wafer
- wafer
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- 238000005498 polishing Methods 0.000 title claims description 175
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 34
- 239000002002 slurry Substances 0.000 claims description 66
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 53
- 230000003746 surface roughness Effects 0.000 claims description 41
- 229910052732 germanium Inorganic materials 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000008119 colloidal silica Substances 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 36
- 239000000758 substrate Substances 0.000 description 12
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000005708 Sodium hypochlorite Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
上記のように、Ge表面を従来の研磨方法で研磨を行うと、表面粗さを充分に小さくできないため、特に、貼り合わせ用ウェーハとして用いた場合に、ボイドやブリスター等の界面欠陥の発生を充分に抑制することができないという問題があった。
図1に示すフロー図に従いゲルマニウムウェーハの研磨を実施した。まず、ゲルマニウムウェーハは以下のようなウェーハを準備した。
(ゲルマニウムウェーハ)
ゲルマニウムウェーハとしては、直径200mmのシリコン単結晶ウェーハ上の最表面にバッファ層を介し、厚さ500nmのGe単結晶層をエピタキシャル成長したゲルマニウムウェーハを準備した。このゲルマニウムウェーハのGe単結晶層の表面粗さRMSは0.147nm、Raは0.112nmであった。
(第1の研磨スラリー)
過酸化水素水を添加する第1の研磨スラリーとしてはG3900RS(コロイダルシリカ含有、フジミインコーポレーテッド社製)を、純水で20倍希釈したもの(23℃、pH9)を使用した。
(過酸化水素水)
上記第1の研磨スラリーに添加する過酸化水素水としては濃度が30wt%(質量%)のものを使用した。
(第2の研磨スラリー)
濃度が30wt%の過酸化水素水を上記第1の研磨スラリーに、第1の研磨スラリーの容量に対して、0.005vol%、0.015vol%、0.050vol%、0.100vol%の濃度で添加した4種類のものをそれぞれ研磨に使用した。
第1の研磨スラリーに添加する30wt%の過酸化水素水の添加量を、第1の研磨スラリーの容量に対して、0vol%(添加なし)、0.120vol%、0.150vol%、0.249vol%と変化させたこと以外、実施例1と同様な条件で第2の研磨スラリーを作製してゲルマニウムウェーハの研磨に使用し、実施例1と同様な方法で研磨後のゲルマニウムウェーハの表面粗さを測定した。
第1の研磨スラリーとして、G3900RS(コロイダルシリカ含有、フジミインコーポレーテッド社製)を、純水で10倍希釈したもの(23℃、pH9)を使用したこと以外、実施例1と同様な条件で第2の研磨スラリーを作製してゲルマニウムウェーハの研磨に使用し、実施例1と同様な方法で研磨後のゲルマニウムウェーハの表面粗さRMSを測定した。尚、研磨する前のゲルマニウムウェーハの表面粗さRMSは0.131nmであった。
第1の研磨スラリーに添加する30wt%の過酸化水素水の添加量を、第1の研磨スラリーの容量に対して、0vol%(添加なし)、0.120vol%、0.150vol%、0.249vol%と変化させたこと以外、実施例2と同様な条件で第2の研磨スラリーを作製してゲルマニウムウェーハの研磨に使用し、実施例2と同様な方法で研磨後のゲルマニウムウェーハの表面粗さを測定した。尚、研磨する前のゲルマニウムウェーハの表面粗さRMSは0.131nmであった。
4…研磨パッド、 5…研磨スラリー供給機構、 6…タンク、
7…第2の研磨スラリー、 8…ポンプ、 9…ステージ、 10…ブラシ。
Claims (5)
- 表面がゲルマニウムから成るゲルマニウムウェーハの研磨において、コロイダルシリカを含有するアルカリ性水溶液である第1の研磨スラリーに過酸化水素水を添加し、該過酸化水素水を添加した第2の研磨スラリーを用いて前記ゲルマニウムウェーハの表面を研磨するゲルマニウムウェーハの研磨方法であって、
前記第1の研磨スラリーに前記過酸化水素水を、前記第1の研磨スラリーの容量に対し、30wt%の過酸化水素水を0vol%より大きく0.1vol%以下の容量で添加した濃度に相当する濃度で添加し、該過酸化水素水を添加した第2の研磨スラリーを用いて前記ゲルマニウムウェーハの表面を研磨することを特徴とするゲルマニウムウェーハの研磨方法。 - 前記過酸化水素水を、前記第1の研磨スラリーの容量に対し、30wt%の過酸化水素水を0.005vol%以上、0.05vol%以下の容量で添加した濃度に相当する濃度で添加することを特徴とする請求項1に記載のゲルマニウムウェーハの研磨方法。
- 前記ゲルマニウムウェーハを、シリコン単結晶ウェーハ上の最表面にゲルマニウムから成るエピタキシャル層を形成したものとすることを特徴とする請求項1又は請求項2に記載のゲルマニウムウェーハの研磨方法。
- 前記ゲルマニウムから成るエピタキシャル層の厚さを1μm以下とすることを特徴とする請求項3に記載のゲルマニウムウェーハの研磨方法。
- 前記研磨しようとするゲルマニウムウェーハを、その表面の面粗さ(RMS)が0.20nm以下のものとすることを特徴とする請求項1から請求項4のいずれか一項に記載のゲルマニウムウェーハの研磨方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014152784A JP6094541B2 (ja) | 2014-07-28 | 2014-07-28 | ゲルマニウムウェーハの研磨方法 |
US15/500,328 US20170216992A1 (en) | 2014-07-28 | 2015-06-18 | Method for polishing germanium wafer |
PCT/JP2015/003046 WO2016017063A1 (ja) | 2014-07-28 | 2015-06-18 | ゲルマニウムウェーハの研磨方法 |
EP15826876.3A EP3176810B1 (en) | 2014-07-28 | 2015-06-18 | Method for polishing germanium wafer |
KR1020177002334A KR102370980B1 (ko) | 2014-07-28 | 2015-06-18 | 게르마늄 웨이퍼의 연마방법 |
CN201580038731.8A CN106537561B (zh) | 2014-07-28 | 2015-06-18 | 锗晶圆的研磨方法 |
SG11201700394YA SG11201700394YA (en) | 2014-07-28 | 2015-06-18 | Method for polishing germanium wafer |
TW104120856A TWI616280B (zh) | 2014-07-28 | 2015-06-26 | 锗 wafer grinding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014152784A JP6094541B2 (ja) | 2014-07-28 | 2014-07-28 | ゲルマニウムウェーハの研磨方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016031971A JP2016031971A (ja) | 2016-03-07 |
JP6094541B2 true JP6094541B2 (ja) | 2017-03-15 |
Family
ID=55216993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014152784A Active JP6094541B2 (ja) | 2014-07-28 | 2014-07-28 | ゲルマニウムウェーハの研磨方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170216992A1 (ja) |
EP (1) | EP3176810B1 (ja) |
JP (1) | JP6094541B2 (ja) |
KR (1) | KR102370980B1 (ja) |
CN (1) | CN106537561B (ja) |
SG (1) | SG11201700394YA (ja) |
TW (1) | TWI616280B (ja) |
WO (1) | WO2016017063A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110660654B (zh) * | 2019-09-30 | 2022-05-03 | 闽南师范大学 | 一种超高质量SOI基键合Ge薄膜的制备方法 |
CN115070512B (zh) * | 2022-03-11 | 2024-04-26 | 北京爱瑞思光学仪器有限公司 | 一种锗晶片的双抛工艺、装置及锗晶片 |
Family Cites Families (17)
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US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5938505A (en) * | 1997-01-10 | 1999-08-17 | Texas Instruments Incorporated | High selectivity oxide to nitride slurry |
EP0853335A3 (en) * | 1997-01-10 | 1999-01-07 | Texas Instruments Incorporated | Slurry and process for the mechano-chemical polishing of semiconductor devices |
US6524167B1 (en) * | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
CN101611116A (zh) * | 2005-01-25 | 2009-12-23 | 普莱克斯S.T.技术有限公司 | 含有多功能活化剂的新的抛光浆和无磨料溶液 |
JP4749775B2 (ja) | 2005-06-23 | 2011-08-17 | 山口精研工業株式会社 | ウェーハ研磨液組成物及びウェーハ研磨方法 |
KR100818996B1 (ko) * | 2006-06-19 | 2008-04-04 | 삼성전자주식회사 | 금속배선 연마용 슬러리 |
EP1928020B1 (en) | 2006-11-30 | 2020-04-22 | Soitec | Method of manufacturing a semiconductor heterostructure |
DE102007019565A1 (de) * | 2007-04-25 | 2008-09-04 | Siltronic Ag | Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
US8981427B2 (en) * | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
JP2013533614A (ja) * | 2010-06-01 | 2013-08-22 | アプライド マテリアルズ インコーポレイテッド | 銅ウエハ研磨の化学的平坦化 |
US8309468B1 (en) * | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
TWI548728B (zh) * | 2011-08-01 | 2016-09-11 | 巴斯夫歐洲公司 | 一種製造半導體裝置的方法,其包含在包含特定有機化合物之CMP組成物的存在下化學機械拋光元素鍺及/或Si1-x Gex材料 |
US20150060400A1 (en) * | 2012-04-18 | 2015-03-05 | Fujimi Incorporated | Polishing composition |
-
2014
- 2014-07-28 JP JP2014152784A patent/JP6094541B2/ja active Active
-
2015
- 2015-06-18 WO PCT/JP2015/003046 patent/WO2016017063A1/ja active Application Filing
- 2015-06-18 KR KR1020177002334A patent/KR102370980B1/ko active IP Right Grant
- 2015-06-18 CN CN201580038731.8A patent/CN106537561B/zh active Active
- 2015-06-18 US US15/500,328 patent/US20170216992A1/en not_active Abandoned
- 2015-06-18 SG SG11201700394YA patent/SG11201700394YA/en unknown
- 2015-06-18 EP EP15826876.3A patent/EP3176810B1/en active Active
- 2015-06-26 TW TW104120856A patent/TWI616280B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN106537561B (zh) | 2019-11-15 |
EP3176810A1 (en) | 2017-06-07 |
KR102370980B1 (ko) | 2022-03-07 |
EP3176810B1 (en) | 2019-12-04 |
SG11201700394YA (en) | 2017-03-30 |
KR20170038809A (ko) | 2017-04-07 |
US20170216992A1 (en) | 2017-08-03 |
JP2016031971A (ja) | 2016-03-07 |
TWI616280B (zh) | 2018-03-01 |
CN106537561A (zh) | 2017-03-22 |
WO2016017063A1 (ja) | 2016-02-04 |
EP3176810A4 (en) | 2018-08-29 |
TW201603953A (zh) | 2016-02-01 |
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