SG11201700394YA - Method for polishing germanium wafer - Google Patents

Method for polishing germanium wafer

Info

Publication number
SG11201700394YA
SG11201700394YA SG11201700394YA SG11201700394YA SG11201700394YA SG 11201700394Y A SG11201700394Y A SG 11201700394YA SG 11201700394Y A SG11201700394Y A SG 11201700394YA SG 11201700394Y A SG11201700394Y A SG 11201700394YA SG 11201700394Y A SG11201700394Y A SG 11201700394YA
Authority
SG
Singapore
Prior art keywords
germanium wafer
polishing germanium
polishing
wafer
germanium
Prior art date
Application number
SG11201700394YA
Inventor
Yasuo Nagaoka
Hiroji Aga
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201700394YA publication Critical patent/SG11201700394YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
SG11201700394YA 2014-07-28 2015-06-18 Method for polishing germanium wafer SG11201700394YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014152784A JP6094541B2 (en) 2014-07-28 2014-07-28 Germanium wafer polishing method
PCT/JP2015/003046 WO2016017063A1 (en) 2014-07-28 2015-06-18 Method for polishing germanium wafer

Publications (1)

Publication Number Publication Date
SG11201700394YA true SG11201700394YA (en) 2017-03-30

Family

ID=55216993

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700394YA SG11201700394YA (en) 2014-07-28 2015-06-18 Method for polishing germanium wafer

Country Status (8)

Country Link
US (1) US20170216992A1 (en)
EP (1) EP3176810B1 (en)
JP (1) JP6094541B2 (en)
KR (1) KR102370980B1 (en)
CN (1) CN106537561B (en)
SG (1) SG11201700394YA (en)
TW (1) TWI616280B (en)
WO (1) WO2016017063A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110660654B (en) * 2019-09-30 2022-05-03 闽南师范大学 Preparation method of ultra-high-quality SOI (silicon on insulator) -based bonded Ge film
CN115070512B (en) * 2022-03-11 2024-04-26 北京爱瑞思光学仪器有限公司 Double-polishing process and device for germanium wafer and germanium wafer

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
US5938505A (en) * 1997-01-10 1999-08-17 Texas Instruments Incorporated High selectivity oxide to nitride slurry
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
CN101611116A (en) * 2005-01-25 2009-12-23 普莱克斯S.T.技术有限公司 The new rubbing paste and the abrasive-free solutions that contain multifunctional activator
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
JP4749775B2 (en) 2005-06-23 2011-08-17 山口精研工業株式会社 Wafer polishing liquid composition and wafer polishing method
KR100818996B1 (en) * 2006-06-19 2008-04-04 삼성전자주식회사 Slurry For Polishing Metal Lines
EP1928020B1 (en) 2006-11-30 2020-04-22 Soitec Method of manufacturing a semiconductor heterostructure
DE102007019565A1 (en) * 2007-04-25 2008-09-04 Siltronic Ag Semiconductor disk one-sided polishing method for e.g. memory cell, involves providing polishing agent between polishing cloth and disk, where polishing agent has alkaline component and component dissolving germanium
US8981427B2 (en) * 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8586481B2 (en) * 2010-06-01 2013-11-19 Applied Materials, Inc. Chemical planarization of copper wafer polishing
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
KR20140059216A (en) * 2011-08-01 2014-05-15 바스프 에스이 A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si_1 x ge x material in the presence of a cmp composition comprising a specific organic compound
JP6132315B2 (en) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド Polishing composition

Also Published As

Publication number Publication date
EP3176810A4 (en) 2018-08-29
EP3176810A1 (en) 2017-06-07
CN106537561B (en) 2019-11-15
EP3176810B1 (en) 2019-12-04
KR20170038809A (en) 2017-04-07
WO2016017063A1 (en) 2016-02-04
TWI616280B (en) 2018-03-01
TW201603953A (en) 2016-02-01
JP2016031971A (en) 2016-03-07
JP6094541B2 (en) 2017-03-15
KR102370980B1 (en) 2022-03-07
US20170216992A1 (en) 2017-08-03
CN106537561A (en) 2017-03-22

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