SG11201606645VA - Method for driving semiconductor device - Google Patents
Method for driving semiconductor deviceInfo
- Publication number
- SG11201606645VA SG11201606645VA SG11201606645VA SG11201606645VA SG11201606645VA SG 11201606645V A SG11201606645V A SG 11201606645VA SG 11201606645V A SG11201606645V A SG 11201606645VA SG 11201606645V A SG11201606645V A SG 11201606645VA SG 11201606645V A SG11201606645V A SG 11201606645VA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- driving semiconductor
- driving
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356086—Bistable circuits with additional means for controlling the main nodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/131—Digitally controlled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/26—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being duration, interval, position, frequency, or sequence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014044522 | 2014-03-07 | ||
JP2014044532 | 2014-03-07 | ||
JP2014091047 | 2014-04-25 | ||
JP2014180900 | 2014-09-05 | ||
PCT/IB2015/051386 WO2015132696A1 (en) | 2014-03-07 | 2015-02-25 | Method for driving semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606645VA true SG11201606645VA (en) | 2016-09-29 |
Family
ID=54018437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606645VA SG11201606645VA (en) | 2014-03-07 | 2015-02-25 | Method for driving semiconductor device |
Country Status (8)
Country | Link |
---|---|
US (2) | US9479145B2 (en) |
JP (2) | JP6590488B2 (en) |
KR (1) | KR102264584B1 (en) |
CN (1) | CN106134078B (en) |
DE (1) | DE112015001133T5 (en) |
SG (1) | SG11201606645VA (en) |
TW (1) | TWI670942B (en) |
WO (1) | WO2015132696A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015001705A1 (en) * | 2013-07-02 | 2015-01-08 | Jfeスチール株式会社 | Method of manufacturing hot press member |
CN106134078B (en) * | 2014-03-07 | 2019-05-28 | 株式会社半导体能源研究所 | Method for driving semiconductor device |
WO2016012893A1 (en) | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator circuit and semiconductor device including the same |
US9793905B2 (en) | 2014-10-31 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102553553B1 (en) | 2015-06-12 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Imaging device, method for operating the same, and electronic device |
US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
TWI730091B (en) | 2016-05-13 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
US10930205B2 (en) * | 2016-05-19 | 2021-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Display system and moving object |
JP6962731B2 (en) | 2016-07-29 | 2021-11-05 | 株式会社半導体エネルギー研究所 | Semiconductor devices, display systems and electronic devices |
CN110088823B (en) | 2016-12-23 | 2023-06-30 | 株式会社半导体能源研究所 | Data conversion circuit and display device |
WO2021094844A1 (en) | 2019-11-11 | 2021-05-20 | 株式会社半導体エネルギー研究所 | Information processing device and operation method for information processing device |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3265045B2 (en) * | 1993-04-21 | 2002-03-11 | 株式会社東芝 | Voltage controlled oscillator |
JPH08186490A (en) * | 1994-11-04 | 1996-07-16 | Fujitsu Ltd | Phase synchronizing circuit and data reproducing device |
US5596545A (en) * | 1995-12-04 | 1997-01-21 | Ramax, Inc. | Semiconductor memory device with internal self-refreshing |
JP3298448B2 (en) * | 1997-02-21 | 2002-07-02 | 日本電気株式会社 | Voltage controlled oscillator |
JPH1127107A (en) * | 1997-07-02 | 1999-01-29 | Fujitsu Ltd | Voltage controlled oscillating circuit |
JP3631008B2 (en) * | 1998-10-02 | 2005-03-23 | 富士通株式会社 | Voltage controlled oscillator |
JP2004048690A (en) * | 2002-05-20 | 2004-02-12 | Nec Micro Systems Ltd | Ring oscillator |
US7549139B1 (en) * | 2003-09-19 | 2009-06-16 | Xilinx, Inc. | Tuning programmable logic devices for low-power design implementation |
US7504854B1 (en) * | 2003-09-19 | 2009-03-17 | Xilinx, Inc. | Regulating unused/inactive resources in programmable logic devices for static power reduction |
WO2006118284A1 (en) | 2005-04-27 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Pll circuit and semiconductor device having the same |
US7406297B2 (en) * | 2005-05-30 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Clock generation circuit and semiconductor device provided therewith |
KR100689832B1 (en) * | 2005-06-21 | 2007-03-08 | 삼성전자주식회사 | Phase locked loop and method |
US20100001804A1 (en) * | 2008-07-06 | 2010-01-07 | Friend David M | System to improve a voltage-controlled oscillator and associated methods |
CN102668097B (en) * | 2009-11-13 | 2015-08-12 | 株式会社半导体能源研究所 | Semiconductor device and manufacture method thereof |
KR101773992B1 (en) * | 2010-03-12 | 2017-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
JP5592952B2 (en) * | 2010-07-30 | 2014-09-17 | 株式会社日立製作所 | Oxide semiconductor device |
JP2012191025A (en) * | 2011-03-11 | 2012-10-04 | Dainippon Printing Co Ltd | Thin-film transistor array substrate, thin-film integrated circuit device, and method for manufacturing them |
TWI614995B (en) | 2011-05-20 | 2018-02-11 | 半導體能源研究所股份有限公司 | Phase locked loop and semiconductor device using the same |
CN106298772A (en) * | 2012-05-02 | 2017-01-04 | 株式会社半导体能源研究所 | Pld |
WO2013176199A1 (en) * | 2012-05-25 | 2013-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
US9514812B2 (en) * | 2013-03-28 | 2016-12-06 | Hewlett Packard Enterprise Development Lp | Apparatus and method for reading a storage device with a ring oscillator and a time-to-digital circuit |
US9209795B2 (en) | 2013-05-17 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device and measuring method |
US9685141B2 (en) * | 2014-01-31 | 2017-06-20 | Samsung Display Co., Ltd. | MDLL/PLL hybrid design with uniformly distributed output phases |
CN106134078B (en) * | 2014-03-07 | 2019-05-28 | 株式会社半导体能源研究所 | Method for driving semiconductor device |
WO2016012893A1 (en) * | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator circuit and semiconductor device including the same |
US9595955B2 (en) * | 2014-08-08 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including power storage elements and switches |
US20160117045A1 (en) * | 2014-10-27 | 2016-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator Circuit, Phase Locked Loop, and Electronic Device |
US9793905B2 (en) * | 2014-10-31 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2015
- 2015-02-25 CN CN201580012324.XA patent/CN106134078B/en not_active Expired - Fee Related
- 2015-02-25 SG SG11201606645VA patent/SG11201606645VA/en unknown
- 2015-02-25 KR KR1020167023980A patent/KR102264584B1/en active IP Right Grant
- 2015-02-25 DE DE112015001133.1T patent/DE112015001133T5/en active Pending
- 2015-02-25 WO PCT/IB2015/051386 patent/WO2015132696A1/en active Application Filing
- 2015-03-02 JP JP2015039837A patent/JP6590488B2/en active Active
- 2015-03-03 US US14/636,529 patent/US9479145B2/en active Active
- 2015-03-05 TW TW104107052A patent/TWI670942B/en not_active IP Right Cessation
-
2016
- 2016-09-30 US US15/281,151 patent/US9929736B2/en not_active Expired - Fee Related
-
2019
- 2019-09-17 JP JP2019168345A patent/JP6910401B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE112015001133T5 (en) | 2016-12-01 |
US9929736B2 (en) | 2018-03-27 |
JP6910401B2 (en) | 2021-07-28 |
CN106134078B (en) | 2019-05-28 |
TWI670942B (en) | 2019-09-01 |
JP2016054474A (en) | 2016-04-14 |
TW201547210A (en) | 2015-12-16 |
WO2015132696A1 (en) | 2015-09-11 |
JP2020010388A (en) | 2020-01-16 |
KR20160130761A (en) | 2016-11-14 |
US20170019117A1 (en) | 2017-01-19 |
US20150256161A1 (en) | 2015-09-10 |
KR102264584B1 (en) | 2021-06-11 |
JP6590488B2 (en) | 2019-10-16 |
CN106134078A (en) | 2016-11-16 |
US9479145B2 (en) | 2016-10-25 |
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