JP2011205096A5 - - Google Patents
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- Publication number
- JP2011205096A5 JP2011205096A5 JP2011052897A JP2011052897A JP2011205096A5 JP 2011205096 A5 JP2011205096 A5 JP 2011205096A5 JP 2011052897 A JP2011052897 A JP 2011052897A JP 2011052897 A JP2011052897 A JP 2011052897A JP 2011205096 A5 JP2011205096 A5 JP 2011205096A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- polysilicon
- mechanical polishing
- polishing composition
- removal rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 17
- 229920005591 polysilicon Polymers 0.000 claims 17
- 239000000126 substance Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 229920002635 polyurethane Polymers 0.000 claims 5
- 239000004814 polyurethane Substances 0.000 claims 5
- 239000011859 microparticle Substances 0.000 claims 2
- 150000007522 mineralic acids Chemical group 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims 1
- 125000002877 alkyl aryl group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 claims 1
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- 229920000570 polyether Polymers 0.000 claims 1
- -1 sulfonate compound Chemical class 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/724,685 US8491808B2 (en) | 2010-03-16 | 2010-03-16 | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
| US12/724685 | 2010-03-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011205096A JP2011205096A (ja) | 2011-10-13 |
| JP2011205096A5 true JP2011205096A5 (enExample) | 2014-04-17 |
| JP5957777B2 JP5957777B2 (ja) | 2016-07-27 |
Family
ID=44558416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011052897A Expired - Fee Related JP5957777B2 (ja) | 2010-03-16 | 2011-03-10 | ポリシリコン、酸化ケイ素および窒化ケイ素を含む基体を研磨する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8491808B2 (enExample) |
| JP (1) | JP5957777B2 (enExample) |
| KR (1) | KR101672811B1 (enExample) |
| CN (1) | CN102199399B (enExample) |
| DE (1) | DE102011013981A1 (enExample) |
| FR (1) | FR2957548B1 (enExample) |
| TW (1) | TWI500750B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| WO2012032467A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
| KR101340551B1 (ko) * | 2010-12-31 | 2013-12-11 | 제일모직주식회사 | 질화규소를 선택적으로 연마하는 ｃｍｐ 슬러리 조성물 |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| CN107030583A (zh) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | 硅衬底片抛光方法和装置 |
| US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
| CN109971356B (zh) | 2017-12-27 | 2025-10-28 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| JP7120846B2 (ja) * | 2018-08-10 | 2022-08-17 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法 |
| US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| JP2022546584A (ja) * | 2019-09-04 | 2022-11-04 | シーエムシー マテリアルズ，インコーポレイティド | ポリシリコンｃｍｐ用組成物および方法 |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3457107A (en) * | 1965-07-20 | 1969-07-22 | Diversey Corp | Method and composition for chemically polishing metals |
| US4283321A (en) | 1979-10-03 | 1981-08-11 | Gaf Corporation | Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization |
| KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| US6743683B2 (en) * | 2001-12-04 | 2004-06-01 | Intel Corporation | Polysilicon opening polish |
| US7201647B2 (en) * | 2002-06-07 | 2007-04-10 | Praxair Technology, Inc. | Subpad having robust, sealed edges |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
| JP2005347737A (ja) * | 2004-05-07 | 2005-12-15 | Nissan Chem Ind Ltd | シリコンウェハー用研磨組成物 |
| KR100591719B1 (ko) * | 2004-11-09 | 2006-06-22 | 삼성전자주식회사 | 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법 |
| US7790618B2 (en) | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
| JP5441362B2 (ja) * | 2008-05-30 | 2014-03-12 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
-
2010
- 2010-03-16 US US12/724,685 patent/US8491808B2/en not_active Expired - Fee Related
-
2011
- 2011-03-10 JP JP2011052897A patent/JP5957777B2/ja not_active Expired - Fee Related
- 2011-03-14 TW TW100108481A patent/TWI500750B/zh not_active IP Right Cessation
- 2011-03-15 KR KR1020110022824A patent/KR101672811B1/ko not_active Expired - Fee Related
- 2011-03-15 DE DE102011013981.8A patent/DE102011013981A1/de not_active Withdrawn
- 2011-03-16 CN CN201110072210.8A patent/CN102199399B/zh not_active Expired - Fee Related
- 2011-03-16 FR FR1152170A patent/FR2957548B1/fr not_active Expired - Fee Related