FR2957548B1 - Procede de polissage d'un substrat comprenant du polysilicium, de l'oxyde de silicium et du nitrure de silicium - Google Patents

Procede de polissage d'un substrat comprenant du polysilicium, de l'oxyde de silicium et du nitrure de silicium

Info

Publication number
FR2957548B1
FR2957548B1 FR1152170A FR1152170A FR2957548B1 FR 2957548 B1 FR2957548 B1 FR 2957548B1 FR 1152170 A FR1152170 A FR 1152170A FR 1152170 A FR1152170 A FR 1152170A FR 2957548 B1 FR2957548 B1 FR 2957548B1
Authority
FR
France
Prior art keywords
substrate
chemical
mechanical polishing
silicon oxide
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1152170A
Other languages
English (en)
Other versions
FR2957548A1 (fr
Inventor
Yi Guo
Zhendong Liu
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2957548A1 publication Critical patent/FR2957548A1/fr
Application granted granted Critical
Publication of FR2957548B1 publication Critical patent/FR2957548B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

Il est proposé un procédé de polissage chimico-mécanique d'un substrat, comprenant tes étapes consistant à : fournir un substrat, dans lequel le substrat comprend du polysilicium de l'oxyde de silicium et du nitrure de silicium ; fournir une composition de polissage chimico-mécanique comprenant, comme composants initiaux : de l'eau ; un abrasif ; et un composé sulfonate d'alkylarylpolyéther, où le composé sulfonate d'alkylarylpolyéther comporte une portion hydrophobe comportant un groupe alkyle lié à un cycle aryle et une portion hydrophile a cyclique non ionique comportant 4 à 100 atomes de carbone ; et une substance selon la formule I dans laquelle chacun de R1, R2, R3, R4, R5, R6 et R7 est un groupe de pontage de formule -(CH2)n-, où n est un entier choisi parmi 1 à 10 ; fournir un tampon de polissage chimico-mécanique avec une surface de polissage ; déplacer la surface de polissage par rapport au substrat ; distribuer la composition de polissage chimico-mécanique sur la surface de polissage ; et abraser au moins une partie du substrat pour polir le substrat ; où au moins une partie du polysilicium est éliminée du substrat ; et où au moins une partie de l'oxyde de silicium et du nitrure de silicium est éliminée du substrat.
FR1152170A 2010-03-16 2011-03-16 Procede de polissage d'un substrat comprenant du polysilicium, de l'oxyde de silicium et du nitrure de silicium Expired - Fee Related FR2957548B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/724,685 US8491808B2 (en) 2010-03-16 2010-03-16 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride

Publications (2)

Publication Number Publication Date
FR2957548A1 FR2957548A1 (fr) 2011-09-23
FR2957548B1 true FR2957548B1 (fr) 2015-07-03

Family

ID=44558416

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152170A Expired - Fee Related FR2957548B1 (fr) 2010-03-16 2011-03-16 Procede de polissage d'un substrat comprenant du polysilicium, de l'oxyde de silicium et du nitrure de silicium

Country Status (7)

Country Link
US (1) US8491808B2 (fr)
JP (1) JP5957777B2 (fr)
KR (1) KR101672811B1 (fr)
CN (1) CN102199399B (fr)
DE (1) DE102011013981A1 (fr)
FR (1) FR2957548B1 (fr)
TW (1) TWI500750B (fr)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US20130171824A1 (en) * 2010-09-08 2013-07-04 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
KR101340551B1 (ko) * 2010-12-31 2013-12-11 제일모직주식회사 질화규소를 선택적으로 연마하는 ｃｍｐ 슬러리 조성물
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
CN107030583A (zh) * 2017-03-21 2017-08-11 天津华海清科机电科技有限公司 硅衬底片抛光方法和装置
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
CN109971356A (zh) 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (18)

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US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US4283321A (en) * 1979-10-03 1981-08-11 Gaf Corporation Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US6743683B2 (en) * 2001-12-04 2004-06-01 Intel Corporation Polysilicon opening polish
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
KR100591719B1 (ko) * 2004-11-09 2006-06-22 삼성전자주식회사 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Also Published As

Publication number Publication date
JP5957777B2 (ja) 2016-07-27
TW201139636A (en) 2011-11-16
CN102199399A (zh) 2011-09-28
CN102199399B (zh) 2014-04-02
FR2957548A1 (fr) 2011-09-23
KR101672811B1 (ko) 2016-11-04
JP2011205096A (ja) 2011-10-13
KR20110104443A (ko) 2011-09-22
US20110230048A1 (en) 2011-09-22
TWI500750B (zh) 2015-09-21
US8491808B2 (en) 2013-07-23
DE102011013981A1 (de) 2014-02-13

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