FR3022815B1 - Procede de polissage mecano-chimique - Google Patents

Procede de polissage mecano-chimique Download PDF

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Publication number
FR3022815B1
FR3022815B1 FR1555697A FR1555697A FR3022815B1 FR 3022815 B1 FR3022815 B1 FR 3022815B1 FR 1555697 A FR1555697 A FR 1555697A FR 1555697 A FR1555697 A FR 1555697A FR 3022815 B1 FR3022815 B1 FR 3022815B1
Authority
FR
France
Prior art keywords
polishing
substrate
providing
chemical mechanical
felt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555697A
Other languages
English (en)
Other versions
FR3022815A1 (fr
Inventor
Bainian Qian
Marty DeGroot
Mark F. Sonnenschein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3022815A1 publication Critical patent/FR3022815A1/fr
Application granted granted Critical
Publication of FR3022815B1 publication Critical patent/FR3022815B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

Il est fourni un procédé de polissage mécano-chimique d'un substrat, comprenant : la fourniture d'une machine de polissage présentant un cylindre ; la fourniture d'un substrat, dans lequel le substrat présente une surface d'oxyde de silicium exposée ; la fourniture d'un feutre de polissage mécano-chimique, comprenant : une couche de polissage de polyuréthane ; dans lequel la composition de couche de polissage de polyuréthane présente un indice acide ≥ 0,5 mg (KOH)/g ; la fourniture d'une suspension abrasive, dans lequel la suspension abrasive comprend de l'eau et un abrasif d'oxyde de cérium ; la création d'un contact dynamique à une interface entre le feutre de polissage mécanochimique et le substrat ; et, la distribution de la suspension abrasive sur la surface de polissage de la couche de polissage de polyuréthane du feutre de polissage mécano-chimique à ou à proximité de l'interface entre le feutre de polissage mécano-chimique et le substrat ; et, le polissage du substrat.
FR1555697A 2014-06-25 2015-06-22 Procede de polissage mecano-chimique Expired - Fee Related FR3022815B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14314355 2014-06-25
US14/314,355 US20150375361A1 (en) 2014-06-25 2014-06-25 Chemical mechanical polishing method

Publications (2)

Publication Number Publication Date
FR3022815A1 FR3022815A1 (fr) 2016-01-01
FR3022815B1 true FR3022815B1 (fr) 2020-01-10

Family

ID=54839848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555697A Expired - Fee Related FR3022815B1 (fr) 2014-06-25 2015-06-22 Procede de polissage mecano-chimique

Country Status (7)

Country Link
US (1) US20150375361A1 (fr)
JP (1) JP6563707B2 (fr)
KR (1) KR20160000855A (fr)
CN (1) CN105215837B (fr)
DE (1) DE102015006980A1 (fr)
FR (1) FR3022815B1 (fr)
TW (1) TWI568531B (fr)

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US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
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US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
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US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10086494B2 (en) * 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
JP6517867B2 (ja) 2017-03-31 2019-05-22 ファナック株式会社 数値制御装置
KR101835087B1 (ko) 2017-05-29 2018-03-06 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법
KR101835090B1 (ko) 2017-05-29 2018-03-06 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법
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WO2019032286A1 (fr) 2017-08-07 2019-02-14 Applied Materials, Inc. Tampons à polir à distribution abrasive et leurs procédés de fabrication
JP6968651B2 (ja) * 2017-10-12 2021-11-17 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
WO2019152222A1 (fr) 2018-02-05 2019-08-08 Applied Materials, Inc. Repérage de point final piézo-électrique de tampons de polissage chimico-mécanique imprimés en 3d
KR102693955B1 (ko) * 2018-04-11 2024-08-09 삼성전자주식회사 글래스 표면 연마를 위한 연마 조성물, 연마 조성물을 이용한 연마 장치 및 연마 방법
KR102054309B1 (ko) * 2018-04-17 2019-12-10 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
US10464188B1 (en) * 2018-11-06 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
KR102298112B1 (ko) 2019-11-20 2021-09-03 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102177748B1 (ko) * 2019-11-28 2020-11-11 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
KR20220117220A (ko) * 2019-12-13 2022-08-23 주식회사 쿠라레 폴리우레탄, 연마층, 연마 패드 및 연마 방법
KR102421208B1 (ko) * 2020-09-10 2022-07-14 에스케이씨솔믹스 주식회사 연마 패드 및 이를 이용한 반도체 소자의 제조 방법
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Also Published As

Publication number Publication date
TWI568531B (zh) 2017-02-01
TW201615338A (zh) 2016-05-01
CN105215837B (zh) 2018-10-19
US20150375361A1 (en) 2015-12-31
DE102015006980A1 (de) 2015-12-31
JP6563707B2 (ja) 2019-08-21
JP2016007701A (ja) 2016-01-18
KR20160000855A (ko) 2016-01-05
CN105215837A (zh) 2016-01-06
FR3022815A1 (fr) 2016-01-01

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