JP6563707B2 - 化学機械研磨法 - Google Patents
化学機械研磨法 Download PDFInfo
- Publication number
- JP6563707B2 JP6563707B2 JP2015125653A JP2015125653A JP6563707B2 JP 6563707 B2 JP6563707 B2 JP 6563707B2 JP 2015125653 A JP2015125653 A JP 2015125653A JP 2015125653 A JP2015125653 A JP 2015125653A JP 6563707 B2 JP6563707 B2 JP 6563707B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- chemical mechanical
- substrate
- polyurethane
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 89
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- 239000012948 isocyanate Substances 0.000 claims description 30
- 150000002513 isocyanates Chemical class 0.000 claims description 30
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 230000003750 conditioning effect Effects 0.000 claims description 21
- 150000002009 diols Chemical class 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 19
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 14
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- 230000000052 comparative effect Effects 0.000 description 14
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- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 5
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- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 4
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 4
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 4
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 4
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical group CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 3
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 125000005442 diisocyanate group Chemical group 0.000 description 3
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- 101710165590 Mitochondrial pyruvate carrier 1 Proteins 0.000 description 2
- 102100024828 Mitochondrial pyruvate carrier 1 Human genes 0.000 description 2
- 229920002176 Pluracol® Polymers 0.000 description 2
- 101710101695 Probable mitochondrial pyruvate carrier 1 Proteins 0.000 description 2
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- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
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- CWKVFRNCODQPDB-UHFFFAOYSA-N 1-(2-aminoethylamino)propan-2-ol Chemical compound CC(O)CNCCN CWKVFRNCODQPDB-UHFFFAOYSA-N 0.000 description 1
- AKCRQHGQIJBRMN-UHFFFAOYSA-N 2-chloroaniline Chemical compound NC1=CC=CC=C1Cl AKCRQHGQIJBRMN-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- PPUHQXZSLCCTAN-UHFFFAOYSA-N 4-[(4-amino-2,3-dichlorophenyl)methyl]-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1Cl PPUHQXZSLCCTAN-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- QJENIOQDYXRGLF-UHFFFAOYSA-N 4-[(4-amino-3-ethyl-5-methylphenyl)methyl]-2-ethyl-6-methylaniline Chemical compound CC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(C)C=2)=C1 QJENIOQDYXRGLF-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- DOBIZWYVJFIYOV-UHFFFAOYSA-N 7-hydroxynaphthalene-1,3-disulfonic acid Chemical compound C1=C(S(O)(=O)=O)C=C(S(O)(=O)=O)C2=CC(O)=CC=C21 DOBIZWYVJFIYOV-UHFFFAOYSA-N 0.000 description 1
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 241000350481 Pterogyne nitens Species 0.000 description 1
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- 125000003118 aryl group Chemical group 0.000 description 1
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- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
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- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
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- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 description 1
- YZZTZUHVGICSCS-UHFFFAOYSA-N n-butan-2-yl-4-[[4-(butan-2-ylamino)phenyl]methyl]aniline Chemical compound C1=CC(NC(C)CC)=CC=C1CC1=CC=C(NC(C)CC)C=C1 YZZTZUHVGICSCS-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- 150000007524 organic acids Chemical class 0.000 description 1
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- 239000007800 oxidant agent Substances 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
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- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Polyurethanes Or Polyureas (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Description
セリアベース研磨スラリーを使用する従来の化学機械研磨工程においては、コンディショニングディスクの選択が、研磨のために化学機械研磨パッドの研磨層の研磨面上で適切なテキスチャの形成及び維持を促進するのに不可欠であるといえる。従来のポリウレタン研磨層をセリアベース研磨スラリーとともに使用する従来の研磨法の場合、コンディショニングディスクの選択が、研磨中に実現される除去速度に対して大きな影響を及ぼす。すなわち、従来のポリウレタン研磨層は、特にセリアベース研磨スラリーとともに使用される場合、限られたコンディショニング許容度しか有しないことがよく知られている。したがって、実際に安定な除去速度を得ることは困難といえる。本出願人は、驚くことに、ポリウレタン研磨層が≧0.5mg(KOH)/gの酸価を示すように選択される、セリアベース研磨スラリーを使用する化学機械研磨の方法が、≧80%のコンディショニング許容度を提供することを見いだした。
CT=[(TEOSA/TEOSM)*100%]
に従って測定される。
式中、CTは、コンディショニング許容度(%単位)であり、TEOSAは、実施例に記載された手順に従ってアグレッシブなコンディショニングディスクを使用して計測されるポリウレタン研磨層のTEOS除去速度(Å/min単位)であり、TEOSMは、実施例に記載された手順に従ってマイルドなコンディショニングディスクを使用して計測されるポリウレタン研磨層のTEOS除去速度(Å/min単位)である。
(式中、m及びnは、独立して、0〜100、好ましくは1〜50、より好ましくは2〜25、最も好ましくは4〜10からなる群より選択される整数である)
によって示される、ペンダントカルボン酸官能基を有する直鎖状飽和ポリエステルジオールからなる材料の群より選択される。
(式中、m及びnは、独立して、1〜100、好ましくは1〜50、より好ましくは2〜25、最も好ましくは4〜10からなる群より選択される整数である)
によって示される材料から選択される。好ましくは、使用されるポリカプロラクトンジオールは、1,000〜10,000(より好ましくは1,000〜5,000、最も好ましくは1,500〜3,000)の数平均分子量MNを有する。
(式中、m及びnは、独立して、0〜100、好ましくは1〜50、より好ましくは2〜25、最も好ましくは4〜10からなる群より選択される整数である)
によって示される、ペンダントカルボン酸官能基を有する直鎖状飽和ポリエステルジオールからなる材料の群より選択される。
ポリウレタン研磨層の調製
表3に記す(a)51℃のイソシアネート末端ウレタンプレポリマー、(b)硬化剤系、及び(c)複数の微小エレメント(すなわちExpancel(登録商標)551DE20d60気孔形成剤)の制御された混合によって比較例C1のポリウレタン研磨層を調製した。イソシアネート末端ウレタンプレポリマーと硬化剤系との比は、イソシアネート末端ウレタンプレポリマー中の未反応イソシアネート(NCO)基に対する硬化剤系中の活性水素基(すなわち、−OH基と−NH2基との合計)の比によって決まる化学量論比が表3に示された比になるように設定した。硬化剤系の添加の前に、複数の微小エレメントをイソシアネート末端ウレタンプレポリマーに混合した。次いで、高剪断混合ヘッドを使用して、複数の微小エレメントが組み込まれたイソシアネート末端ウレタンプレポリマーと硬化剤系とを混合した。混合ヘッドから出たのち、混合物を直径86.4cm(34インチ)の円形型の中に5分かけて分配して、約8cm(3インチ)の全注入厚さを得た。分配された混合物を15分かけてゲル化させたのち、型を硬化オーブンに入れた。そして、型を、硬化オーブン中、以下のサイクルを使用して硬化させた。周囲温度から104℃までオーブン設定値温度への30分間の上昇、次いで104℃のオーブン設定値温度で15.5時間保持、次いで104℃から21℃までオーブン設定値温度への2時間の下降。
比較例C1〜C2及び実施例1に従って、それぞれ気孔形成剤(Expancel(登録商標)材料)を添加して調製した溝なしポリウレタン研磨層材料、及び実施例1〜6に従って、それぞれ気孔形成剤(Expancel(登録商標)材料)を添加せずに調製した溝なしポリウレタン研磨層材料を分析して、表4に報告する物性を測定した。報告する比重は、ASTM D1622に従って純水に対して測定したものであり、報告するショアD硬度は、ASTM D2240に従って測定したものであることに留意すること。
マラソン研磨例
比較例CP2及び実施例P1のそれぞれのために、比較例C2及び実施例1に従って調製したポリウレタン研磨層を感圧接着剤によってSuba(商標)IVサブパッド(Rohm and Haas Electronic Materials CMP Inc.から市販)に貼り合わせた。
マイルドコンディショニング研磨例
比較例MPC1及び実施例MP2〜MP6のそれぞれのために、比較例C1及び実施例2〜6に従って調製したポリウレタン研磨層を感圧接着剤によってSuba(商標)IVサブパッド(Rohm and Haas Electronic Materials CMP Inc.から市販)に貼り合わせた。
アグレッシブコンディショニング研磨例
比較例APC1及び実施例AP2〜AP6のそれぞれのために、比較例C1及び実施例2〜6に従って調製したポリウレタン研磨層を感圧接着剤によってSuba(商標)IVサブパッド(Rohm and Haas Electronic Materials CMP Inc.から市販)に貼り合わせた。
Claims (3)
- プラテンを有する研磨機を提供する工程、
露出した酸化ケイ素面を有する基材を提供する工程、
ポリウレタン研磨層を含む化学機械研磨パッドであって、前記ポリウレタン研磨層が、組成、下面及び研磨面を有するように選択され、前記ポリウレタン研磨層組成が0.5mg(KOH)/g以上の酸価を示し、前記研磨面が基材を研磨するように適合されている、化学機械研磨パッドを提供する工程、
水及びセリア砥粒を含む砥粒スラリーを提供する工程、
前記基材及び前記化学機械研磨パッドを前記研磨機に設置する工程、
前記化学機械研磨パッドと前記基材との間の界面で動的接触を生じさせる工程、及び
前記化学機械研磨パッドの前記ポリウレタン研磨層の前記研磨面上、前記化学機械研磨パッドと前記基材との間の前記界面又はその近くに前記砥粒スラリーを分配する工程を含み、
選択される前記ポリウレタン研磨層の前記組成が、
(a)多官能イソシアネート、
(b)(i)1分子あたり平均で少なくとも2個の活性水素及び少なくとも1個のカルボン酸官能基を有するカルボン酸含有多官能硬化剤を含む硬化剤系、
及び
(c)任意選択で、複数の微小エレメント、を含む成分の反応生成物であり、
前記カルボン酸含有多官能硬化剤が、以下の一般式:
によって示され、ここで、m及びnは独立して、0〜100の整数であり、
前記露出した酸化ケイ素面の少なくともいくらかを前記基材の前記表面から研磨除去する、基材を化学機械研磨する方法。 - 砥粒コンディショナを提供する工程、及び
前記研磨面を前記砥粒コンディショナでコンディショニングする工程
をさらに含む、請求項1記載の方法。 - 前記硬化剤系が、
ジアミン、
ジオール、
アミン開始ポリオール硬化剤、及び
2,000〜100,000の数平均分子量MNを有し、1分子あたり平均で3〜10個のヒドロキシル基を有する高分子量ポリオール硬化剤の少なくとも一つをさらに含む、請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/314,355 | 2014-06-25 | ||
US14/314,355 US20150375361A1 (en) | 2014-06-25 | 2014-06-25 | Chemical mechanical polishing method |
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JP2016007701A JP2016007701A (ja) | 2016-01-18 |
JP6563707B2 true JP6563707B2 (ja) | 2019-08-21 |
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JP2015125653A Active JP6563707B2 (ja) | 2014-06-25 | 2015-06-23 | 化学機械研磨法 |
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US (1) | US20150375361A1 (ja) |
JP (1) | JP6563707B2 (ja) |
KR (1) | KR20160000855A (ja) |
CN (1) | CN105215837B (ja) |
DE (1) | DE102015006980A1 (ja) |
FR (1) | FR3022815B1 (ja) |
TW (1) | TWI568531B (ja) |
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-
2014
- 2014-06-25 US US14/314,355 patent/US20150375361A1/en not_active Abandoned
-
2015
- 2015-05-29 DE DE102015006980.2A patent/DE102015006980A1/de not_active Withdrawn
- 2015-06-11 TW TW104118883A patent/TWI568531B/zh active
- 2015-06-15 CN CN201510329335.2A patent/CN105215837B/zh active Active
- 2015-06-22 KR KR1020150088246A patent/KR20160000855A/ko unknown
- 2015-06-22 FR FR1555697A patent/FR3022815B1/fr not_active Expired - Fee Related
- 2015-06-23 JP JP2015125653A patent/JP6563707B2/ja active Active
Also Published As
Publication number | Publication date |
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DE102015006980A1 (de) | 2015-12-31 |
JP2016007701A (ja) | 2016-01-18 |
KR20160000855A (ko) | 2016-01-05 |
FR3022815B1 (fr) | 2020-01-10 |
FR3022815A1 (fr) | 2016-01-01 |
TWI568531B (zh) | 2017-02-01 |
US20150375361A1 (en) | 2015-12-31 |
TW201615338A (zh) | 2016-05-01 |
CN105215837B (zh) | 2018-10-19 |
CN105215837A (zh) | 2016-01-06 |
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