SG10201804558XA - Uniform cmp polishing method - Google Patents
Uniform cmp polishing methodInfo
- Publication number
- SG10201804558XA SG10201804558XA SG10201804558XA SG10201804558XA SG10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- grooves
- wafer
- rotating
- radial feeder
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 4
- 239000012530 fluid Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
SG-NP 27 UNIFORM CMP POLISHING METHOD of the Disclosure The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid. [Figure 1A]
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201715623184A | 2017-06-14 | 2017-06-14 | |
US201715624979A | 2017-06-16 | 2017-06-16 | |
US15/725,836 US10586708B2 (en) | 2017-06-14 | 2017-10-05 | Uniform CMP polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804558XA true SG10201804558XA (en) | 2019-01-30 |
Family
ID=64457757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804558XA SG10201804558XA (en) | 2017-06-14 | 2018-05-30 | Uniform cmp polishing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10586708B2 (en) |
JP (1) | JP7148288B2 (en) |
KR (1) | KR102660720B1 (en) |
CN (1) | CN109079587B (en) |
DE (1) | DE102018004634A1 (en) |
FR (1) | FR3067626B1 (en) |
SG (1) | SG10201804558XA (en) |
TW (1) | TWI798222B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210116759A (en) | 2020-03-13 | 2021-09-28 | 삼성전자주식회사 | CMP pad and chemical mechanical polishing apparatus having the same |
CN111805412A (en) * | 2020-07-17 | 2020-10-23 | 中国科学院微电子研究所 | Polishing solution dispenser and polishing device |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037367A (en) | 1975-12-22 | 1977-07-26 | Kruse James A | Grinding tool |
US4450652A (en) | 1981-09-04 | 1984-05-29 | Monsanto Company | Temperature control for wafer polishing |
JPS60242975A (en) | 1984-05-14 | 1985-12-02 | Kanebo Ltd | Surface grinding device |
US5076024A (en) | 1990-08-24 | 1991-12-31 | Intelmatec Corporation | Disk polisher assembly |
US5212910A (en) | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
US5527215A (en) | 1992-01-10 | 1996-06-18 | Schlegel Corporation | Foam buffing pad having a finishing surface with a splash reducing configuration |
US5243790A (en) | 1992-06-25 | 1993-09-14 | Abrasifs Vega, Inc. | Abrasive member |
MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
JPH0741539B2 (en) * | 1992-10-22 | 1995-05-10 | 日本軽金属株式会社 | Surface polishing device and fan-shaped solid whetstone piece used for the device |
US6135856A (en) | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
US5778481A (en) | 1996-02-15 | 1998-07-14 | International Business Machines Corporation | Silicon wafer cleaning and polishing pads |
US5690540A (en) | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
JP3812970B2 (en) * | 1996-06-20 | 2006-08-23 | 東京エレクトロン株式会社 | Polishing apparatus and polishing method |
US5888121A (en) | 1997-09-23 | 1999-03-30 | Lsi Logic Corporation | Controlling groove dimensions for enhanced slurry flow |
JP2000000755A (en) | 1998-06-16 | 2000-01-07 | Sony Corp | Polishing pad and polishing method |
GB2345255B (en) | 1998-12-29 | 2000-12-27 | United Microelectronics Corp | Chemical-Mechanical Polishing Pad |
CN1312742C (en) | 1999-03-30 | 2007-04-25 | 株式会社尼康 | Polishing disk, polishing machine and method for manufacturing semiconductor |
US6220942B1 (en) * | 1999-04-02 | 2001-04-24 | Applied Materials, Inc. | CMP platen with patterned surface |
JP2001071256A (en) | 1999-08-31 | 2001-03-21 | Shinozaki Seisakusho:Kk | Method and device for grooving polishing pad, and polishing pad |
JP2001121405A (en) * | 1999-10-25 | 2001-05-08 | Matsushita Electric Ind Co Ltd | Polishing pad |
DE60128768T2 (en) | 2000-01-31 | 2007-10-11 | Shin-Etsu Handotai Co., Ltd. | POLISHING PROCESS AND DEVICE |
TW479000B (en) | 2000-02-24 | 2002-03-11 | United Microelectronics Corp | Polish pad for polishing semiconductor wafer |
US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
US6656019B1 (en) | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US8062098B2 (en) | 2000-11-17 | 2011-11-22 | Duescher Wayne O | High speed flat lapping platen |
JP4087581B2 (en) * | 2001-06-06 | 2008-05-21 | 株式会社荏原製作所 | Polishing equipment |
JP2003145402A (en) | 2001-11-09 | 2003-05-20 | Nippon Electric Glass Co Ltd | Grinder for glass products |
US7169014B2 (en) | 2002-07-18 | 2007-01-30 | Micron Technology, Inc. | Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces |
US7377840B2 (en) | 2004-07-21 | 2008-05-27 | Neopad Technologies Corporation | Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs |
US6783436B1 (en) | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
US6918824B2 (en) | 2003-09-25 | 2005-07-19 | Novellus Systems, Inc. | Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device |
JP2005158797A (en) | 2003-11-20 | 2005-06-16 | Renesas Technology Corp | Manufacturing method for semiconductor device |
US6843711B1 (en) | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
US6955587B2 (en) | 2004-01-30 | 2005-10-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Grooved polishing pad and method |
JP2005262341A (en) | 2004-03-16 | 2005-09-29 | Noritake Super Abrasive:Kk | Cmp pad conditioner |
US7329174B2 (en) | 2004-05-20 | 2008-02-12 | Jsr Corporation | Method of manufacturing chemical mechanical polishing pad |
JP2007081322A (en) * | 2005-09-16 | 2007-03-29 | Jsr Corp | Method for manufacturing chemical-mechanical polishing pad |
KR100568258B1 (en) | 2004-07-01 | 2006-04-07 | 삼성전자주식회사 | Polishing pad for chemical mechanical polishing and apparatus using the same |
USD559066S1 (en) | 2004-10-26 | 2008-01-08 | Jsr Corporation | Polishing pad |
US7169029B2 (en) | 2004-12-16 | 2007-01-30 | 3M Innovative Properties Company | Resilient structured sanding article |
JP3769581B1 (en) | 2005-05-18 | 2006-04-26 | 東洋ゴム工業株式会社 | Polishing pad and manufacturing method thereof |
KR101279819B1 (en) | 2005-04-12 | 2013-06-28 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | Radial-biased polishing pad |
KR100721196B1 (en) * | 2005-05-24 | 2007-05-23 | 주식회사 하이닉스반도체 | Polishing pad and using chemical mechanical polishing apparatus |
US7534162B2 (en) | 2005-09-06 | 2009-05-19 | Freescale Semiconductor, Inc. | Grooved platen with channels or pathway to ambient air |
TW200744786A (en) | 2005-12-28 | 2007-12-16 | Jsr Corp | Chemical mechanical polishing pad and chemical mechanical polishing method |
US20080220702A1 (en) * | 2006-07-03 | 2008-09-11 | Sang Fang Chemical Industry Co., Ltd. | Polishing pad having surface texture |
US7300340B1 (en) * | 2006-08-30 | 2007-11-27 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | CMP pad having overlaid constant area spiral grooves |
JP4909706B2 (en) | 2006-10-24 | 2012-04-04 | 東洋ゴム工業株式会社 | Polishing pad |
US20090137187A1 (en) | 2007-11-21 | 2009-05-28 | Chien-Min Sung | Diagnostic Methods During CMP Pad Dressing and Associated Systems |
US9180570B2 (en) * | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
TWI360459B (en) | 2008-04-11 | 2012-03-21 | Bestac Advanced Material Co Ltd | A polishing pad having groove structure for avoidi |
KR20110100080A (en) * | 2010-03-03 | 2011-09-09 | 삼성전자주식회사 | Polishing pad for chemical mechanical polishing process and chemical mechanical polishing apparatus having the same |
KR101232787B1 (en) | 2010-08-18 | 2013-02-13 | 주식회사 엘지화학 | Polishing-Pad for polishing system |
US9211628B2 (en) | 2011-01-26 | 2015-12-15 | Nexplanar Corporation | Polishing pad with concentric or approximately concentric polygon groove pattern |
US8968058B2 (en) * | 2011-05-05 | 2015-03-03 | Nexplanar Corporation | Polishing pad with alignment feature |
TWI492818B (en) | 2011-07-12 | 2015-07-21 | Iv Technologies Co Ltd | Polishing pad, polishing method and polishing system |
US8920219B2 (en) * | 2011-07-15 | 2014-12-30 | Nexplanar Corporation | Polishing pad with alignment aperture |
WO2013039181A1 (en) | 2011-09-15 | 2013-03-21 | 東レ株式会社 | Polishing pad |
US9067298B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with grooved foundation layer and polishing surface layer |
US9649742B2 (en) | 2013-01-22 | 2017-05-16 | Nexplanar Corporation | Polishing pad having polishing surface with continuous protrusions |
US9415479B2 (en) | 2013-02-08 | 2016-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conductive chemical mechanical planarization polishing pad |
TWM459065U (en) | 2013-04-29 | 2013-08-11 | Iv Technologies Co Ltd | Polishing pad and polishing system |
TWM475334U (en) | 2013-06-07 | 2014-04-01 | Iv Technologies Co Ltd | Polishing pad |
TWI599447B (en) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | Cmp polishing pad having edge exclusion region of offset concentric groove pattern |
TWI549781B (en) | 2015-08-07 | 2016-09-21 | 智勝科技股份有限公司 | Polishing pad, polishing system and polishing method |
-
2017
- 2017-10-05 US US15/725,836 patent/US10586708B2/en active Active
-
2018
- 2018-05-11 CN CN201810448097.0A patent/CN109079587B/en active Active
- 2018-05-13 TW TW107116212A patent/TWI798222B/en active
- 2018-05-28 KR KR1020180060170A patent/KR102660720B1/en active IP Right Grant
- 2018-05-30 SG SG10201804558XA patent/SG10201804558XA/en unknown
- 2018-06-11 DE DE102018004634.7A patent/DE102018004634A1/en active Pending
- 2018-06-11 JP JP2018111057A patent/JP7148288B2/en active Active
- 2018-06-13 FR FR1855161A patent/FR3067626B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102660720B1 (en) | 2024-04-26 |
TWI798222B (en) | 2023-04-11 |
US20180366331A1 (en) | 2018-12-20 |
FR3067626B1 (en) | 2021-12-10 |
TW201904722A (en) | 2019-02-01 |
JP2019022929A (en) | 2019-02-14 |
CN109079587A (en) | 2018-12-25 |
JP7148288B2 (en) | 2022-10-05 |
FR3067626A1 (en) | 2018-12-21 |
KR20180136372A (en) | 2018-12-24 |
DE102018004634A1 (en) | 2018-12-20 |
US10586708B2 (en) | 2020-03-10 |
CN109079587B (en) | 2021-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3022815B1 (en) | MECHANICAL-CHEMICAL POLISHING PROCESS | |
MY141334A (en) | Polishing pad and method of producing the same | |
SG152121A1 (en) | Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers | |
SG10201804560VA (en) | Biased pulse cmp groove pattern | |
WO2011008918A3 (en) | Grooved cmp polishing pad | |
MY187526A (en) | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface | |
FR3049205B1 (en) | POLISHING PAD WITH DEBRIS REMOVAL GROOVES | |
SG10201804557UA (en) | Trapezoidal cmp groove pattern | |
USD933440S1 (en) | Polishing or grinding pad | |
SG10201804558XA (en) | Uniform cmp polishing method | |
MX2015010131A (en) | Grinder for grinding coffee beans as well as coffee machine comprising such a grinder. | |
MY156911A (en) | Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers | |
SG10201804561QA (en) | High-rate cmp polishing method | |
EP3476983A4 (en) | Semiconductor wafer, and method for polishing semiconductor wafer | |
WO2011066491A3 (en) | Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing | |
MY153268A (en) | Dresser for abrasive cloth | |
EP3492546A4 (en) | Abrasive grains, manufacturing method therefor, polishing slurry containing said abrasive grains, and polishing method using said polishing slurry | |
WO2015046543A8 (en) | Method for manufacturing glass substrate for magnetic disk, method for manufacturing magnetic disk, and grinding tool | |
MY201367A (en) | Uniform cmp polishing method | |
SG10201804562RA (en) | Controlled residence cmp polishing method | |
EP3441185A4 (en) | Polishing pad and method for manufacturing same, and method for manufacturing abrasive | |
KR101768553B1 (en) | Carrier plate and workpiece double-side polishing device | |
US20150224622A1 (en) | Polish cloth and method of manufacturing polish cloth | |
MY202290A (en) | Controlled residence cmp polishing method | |
US20140364041A1 (en) | Apparatus and method for polishing wafer |