MY202290A - Controlled residence cmp polishing method - Google Patents

Controlled residence cmp polishing method

Info

Publication number
MY202290A
MY202290A MYPI2018001183A MYPI2018001183A MY202290A MY 202290 A MY202290 A MY 202290A MY PI2018001183 A MYPI2018001183 A MY PI2018001183A MY PI2018001183 A MYPI2018001183 A MY PI2018001183A MY 202290 A MY202290 A MY 202290A
Authority
MY
Malaysia
Prior art keywords
polishing
rotating
radial feeder
wafer
grooves
Prior art date
Application number
MYPI2018001183A
Inventor
John Vu Nguyen Mr
Tony Quan Tran Mr
Jeffrey James Hendron Mr
Jeffrey Robert Stack Mr
Original Assignee
Rohm & Haas Elect Materials Cmp Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Materials Cmp Holdings Inc filed Critical Rohm & Haas Elect Materials Cmp Holdings Inc
Priority to MYPI2018001183A priority Critical patent/MY202290A/en
Publication of MY202290A publication Critical patent/MY202290A/en

Links

Landscapes

  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad (10) having radial feeder grooves (20, 22, 24, 26, 28, 30, 32, 34) in the polishing layer (12) separating the polishing layer (12) into polishing regions (40, 42, 44, 46, 48, 50, 52, 54) . The polishing regions (40, 42, 44, 46, 48, 50, 52, 54) are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves (20, 22, 24, 26, 28, 30, 32 and 34) extend from a location adjacent the center (16) to a location adjacent the outer edge (18). Each polishing region (40, 42, 44, 46, 48, 50, 52, 54) includes a series of biased grooves connecting a pair of adjacent radial feeder grooves (20, 22). Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad (10) adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.
MYPI2018001183A 2018-06-28 2018-06-28 Controlled residence cmp polishing method MY202290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MYPI2018001183A MY202290A (en) 2018-06-28 2018-06-28 Controlled residence cmp polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2018001183A MY202290A (en) 2018-06-28 2018-06-28 Controlled residence cmp polishing method

Publications (1)

Publication Number Publication Date
MY202290A true MY202290A (en) 2024-04-22

Family

ID=90885551

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2018001183A MY202290A (en) 2018-06-28 2018-06-28 Controlled residence cmp polishing method

Country Status (1)

Country Link
MY (1) MY202290A (en)

Similar Documents

Publication Publication Date Title
SG10201804561QA (en) High-rate cmp polishing method
US10032669B2 (en) Wafer dividing method
SG10201804557UA (en) Trapezoidal cmp groove pattern
US11673226B2 (en) Retaining ring for CMP
SG10201804560VA (en) Biased pulse cmp groove pattern
FR3049205B1 (en) POLISHING PAD WITH DEBRIS REMOVAL GROOVES
MX2017003005A (en) Multi-chamfer cutting elements having a shaped cutting face, earth-boring tools including such cutting elements, and related methods.
SG146534A1 (en) Method for the simultaneous grinding of a plurality of semiconductor wafers
SG152121A1 (en) Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers
WO2008153782A3 (en) Methods and apparatus for polishing a semiconductor wafer
SG10201804562RA (en) Controlled residence cmp polishing method
CN103659579A (en) Elastic membrane and substrate holding apparatus
EP3605585A4 (en) Reformed sic wafer manufacturing method, epitaxial layer-attached sic wafer, method for manufacturing same, and surface processing method
SG10201804558XA (en) Uniform cmp polishing method
SG11202109243WA (en) Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
MY202290A (en) Controlled residence cmp polishing method
US9704749B2 (en) Method of dividing wafer into dies
EP4131343A4 (en) Polishing method, and production method for semiconductor substrate
MY201106A (en) High-rate cmp polishing method
MX2020012670A (en) Round knife, cutting assembly and method for cutting tire components.
MY201367A (en) Uniform cmp polishing method
EP3834987A4 (en) Polyurethane for polishing layer, polishing layer, and polishing pad
JP2018518050A5 (en)
MY200935A (en) Biased Pulse Cmp Groove Pattern
MY201686A (en) Trapezoidal cmp groove pattern