JP3812970B2 - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method Download PDF

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Publication number
JP3812970B2
JP3812970B2 JP15939096A JP15939096A JP3812970B2 JP 3812970 B2 JP3812970 B2 JP 3812970B2 JP 15939096 A JP15939096 A JP 15939096A JP 15939096 A JP15939096 A JP 15939096A JP 3812970 B2 JP3812970 B2 JP 3812970B2
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Japan
Prior art keywords
polishing
pad
plate
wafer
surface plate
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JP15939096A
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JPH106210A (en
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卓史 大村
勝文 後藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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  • Mechanical Treatment Of Semiconductor (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体ウエハなどの表面研磨に用いられる研磨装置、特に研磨定盤中央部に研磨スラリ(砥粒液)の供給孔などが設けられている研磨装置および研磨方法並びに研磨パッドに関する。
【0002】
【従来の技術】
半導体ウエハの表面研磨は、半導体ウエハの製造工程や半導体ウエハ上への半導体素子形成工程などにおいて行われる。この半導体ウエハの表面研磨には、研磨パッドを用いる研磨装置が採用されている。
【0003】
図5は、ウエハの研磨装置を示す模式的縦断面図である。研磨パッド11は研磨定盤31に被着されており、その研磨パッド11に対面するようにウエハ載置部42が試料台41に設けられている。ウエハSはウエハ載置部42に載置される。研磨定盤31、試料台41およびウエハ載置部42は、それぞれの軸心回りに回転可能に構成されている。また、研磨の際にウエハSに面ダレを生じさせないため、ウエハSの外周部にリテーナ43が設けられている。
【0004】
ウエハSの研磨は、研磨パッド11の表面に研磨スラリを供給しつつ、ウエハ載置部42を回転(自転)させるとともに研磨定盤31と試料台41のいずれか一方、または両方を回転(公転)させた状態で、研磨定盤31に被着された研磨パッド11をウエハ載置部42に保持されたウエハSに押し当てて行われる。ウエハSと研磨パッドとの相対回転によって、研磨スラリ中の微細な研磨粒子によりウエハSの表面が高精度に研磨される。
【0005】
図6は、ウエハの研磨装置の試料台の模式的平面図であり、研磨パッドに対するウエハの運動を示す図である。ウエハSは、ウエハ載置部42の回転によりウエハSの中心の回りに自転し、また試料台41および研磨定盤(図示せず)の回転により研磨パッドの中心軸を中心として公転する。
【0006】
ウエハの表面に高精度な加工を施すには、研磨定盤の研磨パッドが被着される面が高い平坦性を有することおよびこの研磨定盤へ研磨パッドを適正に被着することが必要である。
【0007】
研磨定盤への研磨パッドの被着は、主に接着剤または両面テープを用いて貼着する方法によっている。しかしながら、この方法には以下のような問題がある。
【0008】
研磨パッドを研磨定盤に貼着する際、研磨パッドと研磨定盤との間に気泡が混入したり、研磨パッドにしわが生じたりする場合がある。その場合、ウエハと対面する研磨パッドの表面に凹凸が生じるため、ウエハ面内の研磨圧力にばらつきが生じ、その結果ウエハ面内の研磨量にばらつきが生じ、高精度の研磨ができない。
【0009】
研磨パッドは、研磨粒子を介して生じるウエハとの摩擦により損耗するため、所定時間ごとに交換される。この研磨パッドの交換のたびに、上述した理由により、研磨パッドと研磨定盤の間への気泡の混入を防ぎつつ研磨パッドを正しく貼着する必要があり、作業者には高度の熟練が要求され、またその作業には多大の時間を要する。特に、使用済みの研磨パッドを引き剥した後に研磨定盤の表面に残る接着剤を除去し、この表面を清浄化する作業には多大の時間を要する。
【0010】
そこで、これらの問題を解決する方法として、研磨パッドの外周部にパッド固定リングを取り付け、このリングを研磨定盤にネジで固定することによって、研磨定盤に研磨パッドを張りあげる方法が提案されている。この方法によれば、接着剤が使われないため、接着剤に起因する上述の問題を解決することができる。
【0011】
【発明が解決しようとする課題】
しかしながら、このパッド固定リングを用いて研磨定盤に研磨パッドを張り上げる方法は、研磨パッドが使用するにつれて伸びるため、パッド固定リングを研磨定盤に取り付けるネジをときどき締め込んで研磨パッドを張り上げる必要がある。この伸びをそのままにしておくと、研磨パッドの表面にしわが生じ、ウエハの研磨に悪影響を及ぼす。
【0012】
本発明は、このような課題を解決するためになされたものであり、研磨定盤に研磨パッドを容易に装着することができ、しかも研磨パッドが伸びてもその伸びを自動的に吸収して、高精度で安定してウエハを研磨することができる研磨装置および研磨方法を提供し、更に、このような研磨装置および研磨方法において使用される研磨パッドを提供することを目的としている。
【0013】
本発明の研磨装置は、研磨パッドの被着面を有する研磨定盤を備える研磨装置において、前記研磨パッドの中央を保持するパッド中央保持板と、前記研磨パッドの外縁部を保持するパッド外縁保持板と、前記パッド中央保持板を研磨定盤に着脱する機構と、前記パッド外縁保持板の複数の引っ張り箇所の夫々に接続されており、前記パッド外縁保持板の複数箇所を夫々引っ張り、前記研磨パッドに張力を作用させ前記研磨定盤に被着させる張架手段とを備えることを特徴としている。
また本発明の研磨装置は、前記張架手段が、前記パッド外縁保持板の複数の引っ張り箇所の夫々を一定張力で引っ張る構成としてある
また本発明の研磨装置は、前記パッド中央保持板が、研磨スラリの供給孔を備えることを特徴とする。
また本発明の研磨方法は、以上の如き研磨装置の前記研磨定盤に研磨パッドを被着させて、ウエハを研磨することを特徴とする
【0014】
本発明によれば、研磨パッドの研磨定盤への被着に接着剤を用いる必要がないため、気泡の混入による研磨パッド表面の凹凸が生じない。また、研磨定盤の表面の接着剤除去の煩わしい作業が不要である。
【0015】
パッド外縁保持板の複数箇所を引っ張ることにより研磨定盤に被着された研磨パッドには一定の張力が作用している。そのために、研磨パッドが伸びてもその伸びが吸収され、またしわが生じることもない。また研磨パッドの交換を半自動で行うことができる。
【0016】
さらに、研磨パッドは、中央部と周縁部の両側で固定されるので、より安定して張りあげられる。この他、研磨定盤中央部に研磨スラリ(砥粒液)の供給孔などを設けることが容易という利点もある。
【0017】
また、この研磨装置の研磨定盤に研磨パッドを被着させて、ウエハを研磨することにより、長期間にわたりウエハを高精度に研磨することができる。
【0018】
【発明の実施の形態】
本発明の研磨装置の例について説明する。本発明の研磨装置の例は、図5および図6に示す研磨装置であって、研磨パッドの研磨定盤への取り付け部分のみが従来と異なっている。
【0019】
図1は、本発明例の研磨装置の研磨定盤部分の半裁断面図である。研磨パッド11が研磨定盤31のパッド被着面に既に張りあげられた状態を示している。研磨定盤31の中央部に研磨スラリ供給孔33が設けられている。研磨パッド11の中央にも、研磨スラリ供給孔11aが設けられている。
【0020】
研磨パッド11のパッド中央部11bは、中央保持下板12と中央保持上板13とからなるパッド中央保持板14で、両側から挟まれてボルト(図示せず)で固定されている。このパッド中央保持板14は、研磨定盤31の研磨パッド被着面の中央の凹部32に取り付けられている。
【0021】
研磨パッド11のパッド外縁部11dは、ほぼ同形のリング状をした外縁保持下板18と外縁保持上板19とからなるパッド外縁保持板20で、両側から挟まれてボルトで固定されている。外縁保持上板19のフック21をロッド23下端のフック22に掛けることにより、パッド外縁保持板20はエアシリンダ25のロッド23に接続されており、エアシリンダ25の駆動により一定張力で研磨パッド11が研磨定盤31に被着されている。
【0022】
研磨パッド11のうち、研磨定盤31に密着するパッド本体部11cが、ウエハの研磨の用いられる。
【0023】
パッド中央保持板14およびパッド外縁保持板20は、アルカリや酸などの薬液に対する耐薬液性を備えまた研磨スラリが付着しにくい材料、例えばステンレス鋼やテフロン(登録商標)が表面にコーティングされた材料で作製することが好ましい。ボルトに関しても同様である。
【0024】
図2は、本発明例の研磨装置の研磨パッドが被着された研磨定盤の底面図である。51および52はボルトである。
【0025】
研磨定盤31に研磨パッド11を張り上げる方法について図1に基づき説明する。
【0026】
▲1▼パッド中央保持板14とパッド外縁保持板20を研磨パッド11にボルトで取り付ける。
【0027】
▲2▼パッド中央保持板14を研磨定盤31の中央の凹部32に取り付けるとともに、パッド外縁保持板20のフック21をエアシリンダ25のロッド23の先端のフック22に掛ける。
【0028】
▲3▼エアシリンダ25を駆動して、パッド外縁保持板20を上向きに一定張力で引っ張り、研磨パッド11を研磨定盤31に張り上げる。
【0029】
パッド中央保持板14の研磨定盤31への取り付け部について説明する。
【0030】
図3は、図1の研磨定盤の研磨パッド被着面の中央部の部分拡大図である。研磨定盤31の研磨パッド被着面の中央の凹部32の側壁には、内側に張り出すようして溝31bが設けられている。また、パッド中央保持上板13には外側に張り出す突出部分13bが設けられている。研磨定盤31のこの溝31bに、パッド中央保持上板13の突出部分13bを載せることにより取り付けられる。なお、12aおよび13aはそれぞれパッド中央保持下板12およびパッド中央保持上板13に設けられた研磨スラリ供給孔である。
【0031】
図4は、図3のA−A断面図であって、(a)は研磨定盤31の中央の凹部にパッド中央保持板を押し上げた状態、(b)はそれを回転させた状態を説明する図である。
【0032】
パッド中央保持板14(上板13)の研磨定盤31への取り付け方法は次の通りである。
【0033】
▲1▼パッド中央保持板14(上板13)を研磨定盤31の凹部32の下に持っていく。パッド中央保持板14(上板13)を研磨定盤31の中央の凹部32に押し上げる(図4(a))。
【0034】
▲2▼パッド中央保持板14(上板13)を回転させ、パッド中央保持上板13の外側に張り出す突出部分13bを研磨定盤31の溝31bに載せる(図4(b))。
【0035】
また、取り外しの際は逆にすれば良い。このようにして、パッド中央保持板14(上板13)を研磨定盤31に簡単に着脱することができる。なお、研磨定盤31の溝31bの周方向に段差をつければ、パッド中央保持上板13の突出部分13bが周方向に動かないようにすることができる。
【0036】
上述したように、この研磨装置はパッド外縁保持板の複数箇所を引っ張ることにより研磨パッドを研磨定盤に被着させるので、研磨パッドに常に一定の張力を作用させることができる。そのために、研磨パッドが伸びてもその伸びが吸収され、またしわが生じることもない。また、研磨パッド11の装着が容易になる。また、この研磨装置の研磨定盤に研磨パッドを被着させて、ウエハを研磨することにより、長期間にわたりウエハを高精度に研磨することができる。
【0037】
なお、パッド中央保持板14およびパッド外縁保持板20は、それぞれ上板と下板の2枚一組の保持板としたが、研磨パッドを保持できさえすれば良く、2枚一組とする必要はない。
【0038】
なお、パッド中央保持板14を研磨定盤31へ着脱する機構は、本発明例に示されたものに限られないことは言うまでもない。
【0039】
エアシリンダで研磨パッドを張り上げる際の張力は、研磨パッドの材質および研磨パッドの面積などから決めれば良い。
【0040】
【実施例】
本発明の実施例について説明する。本実施例で用いた研磨装置は、図1〜図4に示した研磨装置である。それぞれが2枚一組のパッド中央保持板14およびパッド外縁保持板20で研磨パッドを保持した。パッド中央保持板14およびパッド外縁保持板20は、ステンレス鋼(JIS−SUS304)で作製し、研磨パッド11に接触する部分にはローレット加工を施し、それ以外の面はテフロン(登録商標)をコーティングした。研磨パッド11として、他のパッドに比べて伸び易い、ポリエステル製の研磨パッドを用いた。研磨パッド11(パッド本体部11c)の外径は800mmとした。エアシリンダ25で研磨パッドを張り上げる際の張力は、それぞれ40kgfとした。
【0041】
この研磨装置を用いて、熱酸化膜が表面に形成された8インチシリコンウエハの研磨を行った。研磨スラリは、シリカをKOH水溶液に懸濁させたものである。この研磨装置では、研磨パッドの張りを調整することなく、長期間にわたりウエハを高精度に研磨することができた。
【0042】
また、従来法に比べて研磨パッドの交換が、熟練を要することなく短時間で容易にできるようになった。
【0043】
【発明の効果】
本発明の研磨装置によれば、研磨定盤に研磨パッドを容易に装着することができる。また本発明の研磨装置を用いる研磨方法によれば、研磨時に研磨パッドの伸びが生じても、その伸びを自動的に吸収するので、ウエハ等を高精度で研磨することができる。
【図面の簡単な説明】
【図1】本発明の研磨装置の研磨定盤部分の1例の半裁断面図である。
【図2】本発明の研磨装置の研磨パッドが被着された研磨定盤の底面図である。
【図3】図1の研磨定盤の研磨パッド被着面の中央部の部分拡大図である。
【図4】図3のA−A断面図であって、(a)は研磨定盤の中央の凹部にパッド中央保持板を押し上げた状態、(b)はそれを回転させた状態である。
【図5】ウエハの研磨装置を示す模式的縦断面図である。
【図6】ウエハの研磨装置を示す模式的平面図である。
【符号の説明】
11 研磨パッド
12 中央保持下板
13 中央保持上板
13b パッド中央保持上板の突出部分
14 パッド中央保持板
18 外縁保持下板
19 外縁保持上板
20 パッド外縁保持板
21 フック
22 フック
25 エアシリンダ
31 研磨定盤
31b 研磨定盤の凹部内に設けられた溝
33 研磨スラリ供給孔
41 試料台
42 ウエハ載置部
43 リテーナ
51 ボルト
52 ボルト
S ウエハ
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a polishing apparatus used for surface polishing of a semiconductor wafer or the like, and more particularly to a polishing apparatus, a polishing method , and a polishing pad in which a polishing slurry (abrasive liquid) supply hole or the like is provided at the center of a polishing surface plate.
[0002]
[Prior art]
The surface polishing of the semiconductor wafer is performed in a semiconductor wafer manufacturing process, a semiconductor element forming process on the semiconductor wafer, or the like. For polishing the surface of the semiconductor wafer, a polishing apparatus using a polishing pad is employed.
[0003]
FIG. 5 is a schematic longitudinal sectional view showing a wafer polishing apparatus. The polishing pad 11 is attached to a polishing surface plate 31, and a wafer mounting portion 42 is provided on the sample stage 41 so as to face the polishing pad 11. The wafer S is placed on the wafer placement unit 42. The polishing surface plate 31, the sample stage 41, and the wafer mounting unit 42 are configured to be rotatable around their respective axis centers. In addition, a retainer 43 is provided on the outer peripheral portion of the wafer S so as not to cause surface sag in the wafer S during polishing.
[0004]
For polishing the wafer S, while supplying a polishing slurry to the surface of the polishing pad 11, the wafer mounting portion 42 is rotated (autorotated) and either one or both of the polishing platen 31 and the sample table 41 are rotated (revolved). In this state, the polishing pad 11 attached to the polishing surface plate 31 is pressed against the wafer S held on the wafer mounting portion 42. Due to the relative rotation between the wafer S and the polishing pad, the surface of the wafer S is polished with high precision by the fine abrasive particles in the polishing slurry.
[0005]
FIG. 6 is a schematic plan view of the sample stage of the wafer polishing apparatus, showing the movement of the wafer relative to the polishing pad. The wafer S rotates around the center of the wafer S by the rotation of the wafer mounting portion 42 and revolves around the central axis of the polishing pad by the rotation of the sample table 41 and the polishing surface plate (not shown).
[0006]
In order to perform high-precision processing on the surface of a wafer, it is necessary that the surface on which the polishing pad of the polishing surface plate is attached has high flatness and that the polishing pad is properly attached to the polishing surface plate. is there.
[0007]
The polishing pad is attached to the polishing surface plate mainly by a method of attaching using an adhesive or a double-sided tape. However, this method has the following problems.
[0008]
When the polishing pad is attached to the polishing surface plate, air bubbles may be mixed between the polishing pad and the polishing surface plate, or the polishing pad may be wrinkled. In this case, since the surface of the polishing pad facing the wafer is uneven, the polishing pressure in the wafer surface varies, and as a result, the amount of polishing in the wafer surface varies, and high-precision polishing cannot be performed.
[0009]
Since the polishing pad is worn out by friction with the wafer generated through the abrasive particles, the polishing pad is replaced every predetermined time. Each time this polishing pad is replaced, it is necessary to attach the polishing pad correctly while preventing air bubbles from entering between the polishing pad and the polishing platen for the reasons described above. In addition, the work takes a lot of time. In particular, it takes a lot of time to remove the adhesive remaining on the surface of the polishing platen after peeling off the used polishing pad and clean the surface.
[0010]
Therefore, as a method for solving these problems, a method has been proposed in which a pad fixing ring is attached to the outer peripheral portion of the polishing pad, and this ring is fixed to the polishing surface plate with a screw so that the polishing pad is lifted on the polishing surface plate. ing. According to this method, since the adhesive is not used, the above-mentioned problems caused by the adhesive can be solved.
[0011]
[Problems to be solved by the invention]
However, the method of lifting the polishing pad on the polishing surface plate using this pad fixing ring stretches as the polishing pad is used. Therefore, it is necessary to occasionally tighten the screw that attaches the pad fixing ring to the polishing surface plate to lift the polishing pad. is there. If this elongation is left as it is, wrinkles occur on the surface of the polishing pad, which adversely affects the polishing of the wafer.
[0012]
The present invention has been made to solve such problems, and can easily attach a polishing pad to a polishing surface plate, and automatically absorbs the elongation even when the polishing pad is elongated. An object of the present invention is to provide a polishing apparatus and a polishing method capable of polishing a wafer with high accuracy and stability, and to provide a polishing pad used in such a polishing apparatus and polishing method .
[0013]
The polishing apparatus of the present invention is a polishing apparatus including a polishing surface plate having a polishing pad adherent surface, a pad center holding plate for holding the center of the polishing pad, and a pad outer edge holding for holding an outer edge portion of the polishing pad. a plate, a mechanism for attaching and detaching said pad central holding plate to the polishing platen, the pad outer retaining plate is connected to each of the plurality of pull portions of the plurality of locations of the pad outer retaining plate each pull, the polishing And a tension means for applying a tension to the pad and attaching the pad to the polishing surface plate.
In the polishing apparatus of the present invention, the stretching means pulls each of the plurality of pulling portions of the pad outer edge holding plate with a constant tension .
In the polishing apparatus according to the present invention, the pad center holding plate includes a supply hole for polishing slurry .
The polishing method of the present invention, the polishing pad to the polishing platen of the above-described polishing apparatus are adhered, characterized by polishing the wafer.
[0014]
According to the onset bright, it is not necessary to use an adhesive to an adherend to the polishing platen of the polishing pad, it does not occur irregularities of the polishing pad surface by inclusion of air bubbles. Moreover, the troublesome work of removing the adhesive on the surface of the polishing surface plate is unnecessary.
[0015]
A constant tension is applied to the polishing pad attached to the polishing surface plate by pulling a plurality of locations on the pad outer edge holding plate. Therefore, even if the polishing pad is stretched, the stretch is absorbed and wrinkles are not generated. In addition, the polishing pad can be replaced semi-automatically.
[0016]
Furthermore, since the polishing pad is fixed on both sides of the central portion and the peripheral portion, the polishing pad is more stably lifted. In addition, there is also an advantage that it is easy to provide a polishing slurry (abrasive liquid) supply hole in the center of the polishing surface plate.
[0017]
Further, the wafer can be polished with high accuracy over a long period of time by attaching the polishing pad to the polishing surface plate of the polishing apparatus and polishing the wafer.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
An example of the polishing apparatus of the present invention will be described. An example of the polishing apparatus of the present invention is the polishing apparatus shown in FIG. 5 and FIG. 6, and only the part where the polishing pad is attached to the polishing surface plate is different from the conventional one.
[0019]
FIG. 1 is a half sectional view of a polishing surface plate portion of a polishing apparatus according to an embodiment of the present invention. A state in which the polishing pad 11 is already stretched on the pad-attached surface of the polishing surface plate 31 is shown. A polishing slurry supply hole 33 is provided at the center of the polishing surface plate 31. A polishing slurry supply hole 11 a is also provided in the center of the polishing pad 11.
[0020]
The pad center portion 11b of the polishing pad 11 is a pad center holding plate 14 composed of a center holding lower plate 12 and a center holding upper plate 13, and is sandwiched from both sides and fixed with bolts (not shown). The pad center holding plate 14 is attached to a recess 32 in the center of the polishing pad attachment surface of the polishing surface plate 31.
[0021]
The pad outer edge portion 11d of the polishing pad 11 is a pad outer edge holding plate 20 composed of an outer edge holding lower plate 18 and an outer edge holding upper plate 19 each having a substantially ring shape, and is sandwiched from both sides and fixed with bolts. By hooking the hook 21 of the outer edge holding upper plate 19 to the hook 22 at the lower end of the rod 23, the pad outer edge holding plate 20 is connected to the rod 23 of the air cylinder 25, and the polishing pad 11 is driven with a constant tension by driving the air cylinder 25. Is attached to the polishing surface plate 31.
[0022]
Of the polishing pad 11, the pad main body 11c that is in close contact with the polishing surface plate 31 is used for polishing the wafer.
[0023]
The pad center holding plate 14 and the pad outer edge holding plate 20 are made of a material having chemical resistance against chemicals such as alkalis and acids, and a material on which the polishing slurry is difficult to adhere, such as stainless steel or Teflon (registered trademark). It is preferable to produce by. The same applies to bolts.
[0024]
FIG. 2 is a bottom view of the polishing surface plate on which the polishing pad of the polishing apparatus of the present invention is attached. 51 and 52 are bolts.
[0025]
A method of stretching the polishing pad 11 on the polishing surface plate 31 will be described with reference to FIG.
[0026]
(1) The pad center holding plate 14 and the pad outer edge holding plate 20 are attached to the polishing pad 11 with bolts.
[0027]
(2) The pad center holding plate 14 is attached to the concave portion 32 at the center of the polishing surface plate 31 and the hook 21 of the pad outer edge holding plate 20 is hooked on the hook 22 at the tip of the rod 23 of the air cylinder 25.
[0028]
(3) The air cylinder 25 is driven and the pad outer edge holding plate 20 is pulled upward with a constant tension, and the polishing pad 11 is pulled up on the polishing surface plate 31.
[0029]
The attachment part of the pad center holding plate 14 to the polishing surface plate 31 will be described.
[0030]
FIG. 3 is a partially enlarged view of the central portion of the polishing pad deposition surface of the polishing surface plate of FIG. A groove 31b is provided on the side wall of the recess 32 at the center of the polishing pad surface of the polishing surface plate 31 so as to project inward. Further, the pad center holding upper plate 13 is provided with a protruding portion 13b protruding outward. It is attached by placing the protruding portion 13b of the pad center holding upper plate 13 in this groove 31b of the polishing surface plate 31. Reference numerals 12a and 13a denote polishing slurry supply holes provided in the pad center holding lower plate 12 and the pad center holding upper plate 13, respectively.
[0031]
4A and 4B are cross-sectional views taken along the line AA of FIG. 3, in which FIG. 4A illustrates a state in which the pad center holding plate is pushed up into the central recess of the polishing surface plate 31, and FIG. It is a figure to do.
[0032]
A method of attaching the pad center holding plate 14 (upper plate 13) to the polishing surface plate 31 is as follows.
[0033]
(1) The pad center holding plate 14 (upper plate 13) is brought under the recess 32 of the polishing surface plate 31. The pad center holding plate 14 (upper plate 13) is pushed up to the concave portion 32 at the center of the polishing surface plate 31 (FIG. 4A).
[0034]
{Circle around (2)} The pad center holding plate 14 (upper plate 13) is rotated, and the protruding portion 13b projecting outside the pad center holding upper plate 13 is placed on the groove 31b of the polishing surface plate 31 (FIG. 4B).
[0035]
Moreover, what is necessary is just to reverse at the time of removal. In this way, the pad center holding plate 14 (upper plate 13) can be easily attached to and detached from the polishing surface plate 31. Note that if a step is provided in the circumferential direction of the groove 31b of the polishing surface plate 31, the protruding portion 13b of the pad center holding upper plate 13 can be prevented from moving in the circumferential direction.
[0036]
As described above, since this polishing apparatus attaches the polishing pad to the polishing surface plate by pulling a plurality of portions of the pad outer edge holding plate, a constant tension can always be applied to the polishing pad. Therefore, even if the polishing pad is stretched, the stretch is absorbed and wrinkles are not generated. In addition, the polishing pad 11 can be easily attached. Further, the wafer can be polished with high accuracy over a long period of time by attaching the polishing pad to the polishing surface plate of the polishing apparatus and polishing the wafer.
[0037]
The pad center holding plate 14 and the pad outer edge holding plate 20 are each a pair of holding plates of an upper plate and a lower plate, but need only be able to hold the polishing pad and need to be a set of two. There is no.
[0038]
Needless to say, the mechanism for attaching and detaching the pad center holding plate 14 to and from the polishing surface plate 31 is not limited to that shown in the example of the present invention.
[0039]
The tension for lifting the polishing pad with the air cylinder may be determined from the material of the polishing pad and the area of the polishing pad.
[0040]
【Example】
Examples of the present invention will be described. The polishing apparatus used in this example is the polishing apparatus shown in FIGS. The polishing pad was held by a pair of pad center holding plate 14 and pad outer edge holding plate 20 each of which is a set. Pad central holding plate 14 and the pad outer retaining plate 20 made of stainless steel (JIS-SUS304), knurled in a portion in contact with the polishing pad 11, a Teflon (registered trademark) in the other surface Coated. As the polishing pad 11, a polishing pad made of polyester, which is easier to extend than other pads, was used. The outer diameter of the polishing pad 11 (pad body 11c) was 800 mm. The tension when lifting the polishing pad with the air cylinder 25 was 40 kgf.
[0041]
Using this polishing apparatus, an 8-inch silicon wafer having a thermal oxide film formed on the surface was polished. The polishing slurry is obtained by suspending silica in an aqueous KOH solution. With this polishing apparatus, the wafer could be polished with high accuracy over a long period of time without adjusting the tension of the polishing pad.
[0042]
Further, compared to the conventional method, the polishing pad can be easily replaced in a short time without requiring skill.
[0043]
【The invention's effect】
According to the polishing apparatus of the present invention, the polishing pad can be easily mounted on the polishing surface plate. Further, according to the polishing method using the polishing apparatus of the present invention, even if the polishing pad is elongated during polishing, the elongation is automatically absorbed, so that the wafer or the like can be polished with high accuracy.
[Brief description of the drawings]
FIG. 1 is a half sectional view of an example of a polishing surface plate portion of a polishing apparatus of the present invention.
FIG. 2 is a bottom view of a polishing surface plate to which a polishing pad of a polishing apparatus of the present invention is attached.
3 is a partially enlarged view of a central portion of a polishing pad deposition surface of the polishing surface plate of FIG. 1;
4 is a cross-sectional view taken along line AA of FIG. 3, in which (a) shows a state in which the pad center holding plate is pushed up into the concave portion at the center of the polishing surface plate, and (b) shows a state in which it is rotated.
FIG. 5 is a schematic longitudinal sectional view showing a wafer polishing apparatus.
FIG. 6 is a schematic plan view showing a wafer polishing apparatus.
[Explanation of symbols]
11 Polishing pad 12 Center holding lower plate 13 Center holding upper plate 13b Projection portion 14 of pad center holding upper plate Pad center holding plate 18 Outer edge holding lower plate 19 Outer edge holding upper plate 20 Pad outer edge holding plate 21 Hook 22 Hook 25 Air cylinder 31 Polishing surface plate 31b Groove 33 provided in recess of polishing surface plate Polishing slurry supply hole 41 Sample stand 42 Wafer mounting portion 43 Retainer 51 Bolt 52 Bolt S Wafer

Claims (4)

研磨パッドの被着面を有する研磨定盤を備える研磨装置において、前記研磨パッドの中央を保持するパッド中央保持板と、前記研磨パッドの外縁部を保持するパッド外縁保持板と、前記パッド中央保持板を研磨定盤に着脱する機構と、前記パッド外縁保持板の複数の引っ張り箇所の夫々に接続されており、前記パッド外縁保持板の複数箇所を夫々引っ張り、前記研磨パッドに張力を作用させ前記研磨定盤に被着させる張架手段とを備えることを特徴とする研磨装置。In a polishing apparatus including a polishing surface plate having a polishing pad deposition surface, a pad center holding plate for holding the center of the polishing pad, a pad outer edge holding plate for holding an outer edge portion of the polishing pad, and the pad center holding a mechanism for attaching and detaching the plate to the polishing platen, the pad outer retaining plate is connected to each of the plurality of pull portions of said plurality of positions of pads outer holding plate respectively tension, by the action of tension to the polishing pad the A polishing apparatus comprising: a stretching unit that adheres to a polishing surface plate. 前記張架手段は、前記パッド外縁保持板の複数の引っ張り箇所の夫々を一定張力で引っ張る構成としてある請求項1記載の研磨装置。  The polishing apparatus according to claim 1, wherein the stretching means is configured to pull each of a plurality of pulling portions of the pad outer edge holding plate with a constant tension. 前記パッド中央保持板は、研磨スラリの供給孔を備える請求項1または2に記載の研磨装置。The polishing apparatus according to claim 1, wherein the pad center holding plate includes a supply hole for polishing slurry . 請求項1乃至請求項3のいずれかに記載の研磨装置の前記研磨定盤に研磨パッドを被着させて、ウエハを研磨することを特徴とする研磨方法 A polishing method comprising polishing a wafer by attaching a polishing pad to the polishing surface plate of the polishing apparatus according to claim 1 .
JP15939096A 1996-06-20 1996-06-20 Polishing apparatus and polishing method Expired - Fee Related JP3812970B2 (en)

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Application Number Priority Date Filing Date Title
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Publication number Priority date Publication date Assignee Title
US10586708B2 (en) * 2017-06-14 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Uniform CMP polishing method
CN118664500A (en) * 2024-08-21 2024-09-20 浙江求是半导体设备有限公司 Polishing pad arrangement device and arrangement method
CN118664501A (en) * 2024-08-21 2024-09-20 浙江求是半导体设备有限公司 Carrier for polishing pad adhesion and adhesion method

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