TWM459065U - Polishing pad and polishing system - Google Patents

Polishing pad and polishing system Download PDF

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Publication number
TWM459065U
TWM459065U TW102207878U TW102207878U TWM459065U TW M459065 U TWM459065 U TW M459065U TW 102207878 U TW102207878 U TW 102207878U TW 102207878 U TW102207878 U TW 102207878U TW M459065 U TWM459065 U TW M459065U
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Taiwan
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groove
radially extending
center
polishing pad
polishing
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TW102207878U
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Chinese (zh)
Inventor
Shen-Yu Chang
chun-yu Su
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Iv Technologies Co Ltd
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Priority to TW102207878U priority Critical patent/TWM459065U/en
Publication of TWM459065U publication Critical patent/TWM459065U/en

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Abstract

A polishing pad and a polishing system, suitable for polishing a workpiece, are provided. The workpiece has a central track on the polishing pad. The polishing pad includes a polishing layer, a plurality of annular grooves and at least one radial extending groove. The polishing layer has a rotating center and an arranging center, wherein the rotating center and the arranging center have a distance therebetween. The annular grooves, disposed in the polishing layer, are arranged concentrically around the arranging center. The radial extending groove, disposed in the polishing layer, has a plurality of intersections with the central track.

Description

研磨墊以及研磨系統Abrasive pad and grinding system

本創作是有關於一種研磨墊以及研磨系統,且特別是有關於一種可提供較佳研磨均勻度的研磨墊以及研磨系統。The present invention relates to a polishing pad and a polishing system, and more particularly to a polishing pad and a polishing system that provide better polishing uniformity.

隨著產業的進步,平坦化製程經常被採用為生產各種元件的製程。在平坦化製程中,化學機械研磨製程經常為產業所使用。一般來說,化學機械研磨製程是藉由供應具有化學品混合物之研磨液於研磨墊上,並對研磨物件施加一壓力以將其壓置於研磨墊上,且讓研磨物件及研磨墊彼此進行相對運動。藉由相對運動所產生的機械摩擦及研磨液的化學作用下,移除部分研磨物件之表層,而使其表面逐漸平坦,來達成平坦化的目的。As the industry advances, flattening processes are often adopted as processes for producing various components. In the flattening process, the chemical mechanical polishing process is often used by the industry. Generally, the chemical mechanical polishing process is performed by supplying a polishing liquid having a chemical mixture onto a polishing pad, applying a pressure to the abrasive article to press it onto the polishing pad, and allowing the abrasive article and the polishing pad to move relative to each other. . By the mechanical friction generated by the relative motion and the chemical action of the polishing liquid, the surface layer of the partially polished object is removed, and the surface thereof is gradually flattened to achieve the purpose of planarization.

傳統研磨墊包括多個同心圓溝槽,同心圓溝槽是用來容納或排除研磨過程中所產生的殘屑或副產物,並可使研磨物件於研磨程序完成時較容易自圓形研磨墊上移除。一般來說,在進行研磨時,研磨墊會沿著旋轉中心旋轉,與研磨墊表面相接觸的研磨物件則是以通過其中心點的軸線作為旋轉軸而自轉。然而,由於傳統的一種研磨墊上的同心圓溝槽,其排列中心與研磨墊的旋 轉中心重疊。因此當研磨過程,研磨物件中心幾乎會固定地經過研磨墊上的溝槽處或是研磨面。因此,相較研磨物件中心之外的附近區域,研磨物件中心通常具有最低或最高的研磨率(視研磨物件中心固定於溝槽處或是研磨面而定)。The conventional polishing pad comprises a plurality of concentric grooves which are used to accommodate or exclude debris or by-products generated during the grinding process, and which make it easier to polish the object from the circular polishing pad when the grinding process is completed. Remove. Generally, when grinding is performed, the polishing pad rotates along the center of rotation, and the abrasive object that is in contact with the surface of the polishing pad rotates with the axis passing through the center point as a rotation axis. However, due to the concentric circular grooves on a conventional polishing pad, the center of the arrangement and the rotation of the polishing pad The center of the transfer overlaps. Therefore, during the grinding process, the center of the abrasive article is almost fixedly passed through the groove on the polishing pad or the abrasive surface. Therefore, the center of the abrasive article typically has the lowest or highest abrasive rate (depending on whether the center of the abrasive article is fixed at the groove or the abrasive surface) compared to the vicinity of the center of the abrasive article.

傳統的另一種研磨墊上的同心圓溝槽,其排列中心與研磨墊的旋轉中心不重疊,彼此間具有一間距。但在研磨過程,由於研磨物件的自轉,使得研磨物件中心所經過溝槽處及研磨面的次數少於研磨物件中心之外的附近區域所經過溝槽處及研磨面的次數。因此造成靠近研磨物件中心部分之處的研磨均勻度仍然不佳。研磨物件的研磨率不均勻的問題,可能進而影響元件的可靠度。Concentric grooves on another conventional polishing pad have an arrangement center that does not overlap the center of rotation of the polishing pad and has a spacing therebetween. However, during the grinding process, due to the rotation of the abrasive article, the number of times the center of the abrasive article passes through the groove and the polished surface is less than the number of times the groove and the polished surface pass through the vicinity of the center of the abrasive article. Therefore, the uniformity of the grinding near the center portion of the abrasive article is still poor. The problem of uneven grinding rate of the abrasive article may further affect the reliability of the component.

本創作提供一種研磨墊以及研磨系統,能夠使研磨物件的表面獲得較佳的研磨均勻度。The present invention provides a polishing pad and a polishing system that achieves better polishing uniformity on the surface of the abrasive article.

本創作提出一種研磨墊,適用於研磨研磨物件,研磨物件在研磨墊上具有中心軌跡。研磨墊包括研磨層、多個環狀溝槽以及至少一徑向延伸溝槽。研磨層具有旋轉中心以及排列中心,旋轉中心與排列中心之間具有間距。環狀溝槽位於研磨層中,以排列中心為中心呈現同心排列。徑向延伸溝槽位於研磨層中,且徑向延伸溝槽與中心軌跡具有多個交叉點。The present application proposes a polishing pad suitable for grinding abrasive articles having a central trajectory on the polishing pad. The polishing pad includes an abrasive layer, a plurality of annular grooves, and at least one radially extending groove. The polishing layer has a center of rotation and an arrangement center, and a space is provided between the center of rotation and the center of the arrangement. The annular groove is located in the abrasive layer and is arranged concentrically centered on the center of the arrangement. The radially extending trench is located in the abrasive layer and the radially extending trench has a plurality of intersections with the central track.

本創作提出一種研磨系統,適用於研磨研磨物件,研磨 物件在研磨墊上具有中心軌跡。研磨系統包括載具以及研磨墊。載具用於固持研磨物件。研磨墊固定於具有旋轉方向之研磨平台上。研磨墊包括研磨層、多個環狀溝槽以及至少一徑向延伸溝槽。研磨層具有旋轉中心以及排列中心,旋轉中心與排列中心之間具有間距。環狀溝槽位於研磨層中,以排列中心為中心呈現同心排列。徑向延伸溝槽位於研磨層中,且徑向延伸溝槽與中心軌跡具有多個交叉點。This creation proposes a grinding system suitable for grinding abrasive articles, grinding The object has a central trajectory on the polishing pad. The grinding system includes a carrier and a polishing pad. The carrier is used to hold the abrasive article. The polishing pad is attached to a grinding platform having a rotational direction. The polishing pad includes an abrasive layer, a plurality of annular grooves, and at least one radially extending groove. The polishing layer has a center of rotation and an arrangement center, and a space is provided between the center of rotation and the center of the arrangement. The annular groove is located in the abrasive layer and is arranged concentrically centered on the center of the arrangement. The radially extending trench is located in the abrasive layer and the radially extending trench has a plurality of intersections with the central track.

基於上述,本創作之研磨墊具有與旋轉中心呈非同心排列的環狀溝槽,以及徑向延伸溝槽與中心軌跡具有多個交叉點,因此在研磨過程中,能夠增加研磨物件中心所經過溝槽處及研磨面的次數,以提供較佳的研磨均勻度。Based on the above, the polishing pad of the present invention has an annular groove that is non-concentrically arranged with the center of rotation, and the radially extending groove has a plurality of intersections with the center track, so that the center of the abrasive object can be increased during the grinding process. The number of times at the groove and the abrasive surface to provide better grinding uniformity.

為讓本創作的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, the following embodiments are described in detail with reference to the accompanying drawings.

100‧‧‧研磨系統100‧‧‧ grinding system

102‧‧‧載具102‧‧‧ Vehicles

104‧‧‧研磨物件104‧‧‧Abrased objects

110‧‧‧研磨墊110‧‧‧ polishing pad

112‧‧‧研磨層112‧‧‧Abrasive layer

114‧‧‧承載台114‧‧‧Loading station

116‧‧‧環狀溝槽116‧‧‧Round groove

118‧‧‧徑向延伸溝槽118‧‧‧radial extension groove

118a、118b‧‧‧端點118a, 118b‧‧‧ endpoint

A-A’‧‧‧剖線A-A’‧‧‧ cut line

b‧‧‧間距B‧‧‧ spacing

C1‧‧‧旋轉中心C1‧‧‧ Rotation Center

C2‧‧‧排列中心C2‧‧‧ alignment center

C3‧‧‧研磨物件中心C3‧‧‧Abrasion Object Center

T‧‧‧研磨物件之中心軌跡T‧‧‧Center track of abrasive objects

R‧‧‧研磨墊之半徑Radius of R‧‧‧ polishing pad

D‧‧‧旋轉方向D‧‧‧Rotation direction

圖1A為本創作一實施例之研磨系統的上視示意圖。1A is a top plan view of a polishing system in accordance with an embodiment of the present invention.

圖1B為沿圖1A中剖線A-A’的剖面示意圖。Fig. 1B is a schematic cross-sectional view taken along line A-A' of Fig. 1A.

圖2為本創作另一實施例之研磨系統的上視示意圖。2 is a top plan view of a polishing system of another embodiment of the present invention.

圖3為本創作另一實施例之研磨系統的上視示意圖。3 is a top plan view of a polishing system of another embodiment of the present invention.

圖1A是根據本創作一實施例的研磨系統的上視示意圖。圖1B為沿圖1A中剖線A-A’的剖面示意圖。為了清楚的顯現出本實施例的研磨墊,圖1A僅標示出研磨層以及溝槽,而圖1B是詳細地標示出研磨墊以及所有組成構件。請參照圖1A以及圖1B,本實施例的研磨系統100用以對研磨物件104進行研磨。研磨系統100包括載具102以及研磨墊110。載具102設置於研磨墊110的上方,其是用以固持研磨物件104於研磨墊110的上方。研磨系統100更包括承載台114,承載台114用於承載研磨墊110。研磨墊110例如是以黏貼方式或是以吸附方式固定於具有旋轉方向D的承載台114上。1A is a top plan view of a polishing system in accordance with an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along line A-A' of Fig. 1A. In order to clearly show the polishing pad of the present embodiment, FIG. 1A only marks the polishing layer and the groove, and FIG. 1B details the polishing pad and all of the constituent members. Referring to FIG. 1A and FIG. 1B, the polishing system 100 of the present embodiment is used for grinding the abrasive article 104. The polishing system 100 includes a carrier 102 and a polishing pad 110. The carrier 102 is disposed above the polishing pad 110 for holding the abrasive article 104 above the polishing pad 110. The grinding system 100 further includes a carrier 114 for carrying the polishing pad 110. The polishing pad 110 is fixed to the stage 114 having the rotational direction D, for example, by adhesive means or by suction.

在此實施例中,承載台114為圓形轉盤。承載台114旋轉時,會帶動固定於承載台114表面的研磨墊110,而使研磨墊110得以同時旋轉。載具102用以將研磨物件104壓置於研磨墊110之表面,且藉由承載台114的旋轉,使研磨墊110與研磨物件104之間產生一相對運動。藉由研磨墊110與研磨物件104的待研磨表面的磨擦以移除研磨物件104的不平坦表層,因而製得具有較平坦表面的研磨物件104。In this embodiment, the carrier 114 is a circular turntable. When the stage 114 rotates, the polishing pad 110 fixed to the surface of the stage 114 is driven to rotate the polishing pad 110 at the same time. The carrier 102 is used to press the abrasive article 104 against the surface of the polishing pad 110, and a relative movement between the polishing pad 110 and the abrasive article 104 is generated by the rotation of the carrier 114. The abrasive article 104 having a relatively flat surface is produced by the abrasive pad 110 rubbing against the surface to be abraded of the abrasive article 104 to remove the uneven skin of the abrasive article 104.

在本實施例中,研磨墊110包括研磨層112、多個環狀溝槽116以及至少一徑向延伸溝槽118。研磨層112具有旋轉中心C1以及排列中心C2。旋轉中心C1例如是位於研磨層112的中心點,研磨層112是以旋轉中心C1為中心沿著旋轉方向D旋轉。In the present embodiment, the polishing pad 110 includes an abrasive layer 112, a plurality of annular grooves 116, and at least one radially extending groove 118. The polishing layer 112 has a rotation center C1 and an arrangement center C2. The rotation center C1 is, for example, located at the center point of the polishing layer 112, and the polishing layer 112 is rotated in the rotation direction D around the rotation center C1.

研磨層112例如是由聚合物基材所構成,聚合物基材可 以是聚酯(polyester)、聚醚(polyether)、聚胺酯(polyurethane)、聚碳酸酯(polycarbonate)、聚丙烯酸酯(polyacrylate)、聚丁二烯(polybutadiene)、或其餘經由合適之熱固性樹脂(thermosetting resin)或熱塑性樹脂(thermoplastic resin)所合成之聚合物基材等。研磨層112除聚合物基材外,另可包含導電材料、研磨顆粒、或可溶解添加物於此聚合物基材中。The polishing layer 112 is composed, for example, of a polymer substrate, and the polymer substrate can be Either polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, or the rest via a suitable thermosetting resin (thermosetting) A resin substrate or the like synthesized from a thermoplastic resin. The abrasive layer 112 may comprise, in addition to the polymeric substrate, a conductive material, abrasive particles, or a dissolvable additive in the polymeric substrate.

在本實施例中,多個環狀溝槽116位於研磨層112中,以排列中心C2為分布的中心點,且由靠近排列中心C2往研磨層112之邊緣的方向向外分布。環狀溝槽116可為圓形溝槽、橢圓形溝槽、多角形溝槽、波浪環形溝槽、不規則形環狀溝槽、或是其組合。根據本實施例,環狀溝槽116為同心圓溝槽,且相鄰的兩個環狀溝槽116之間的間距是大致相等,但不以此限定本創作之範圍。環狀溝槽116主要是用來提供研磨液之傳輸以及分佈。In the present embodiment, a plurality of annular grooves 116 are located in the polishing layer 112, with the center C2 as the center point of the distribution, and distributed outward from the center of the alignment C2 toward the edge of the polishing layer 112. The annular groove 116 can be a circular groove, an elliptical groove, a polygonal groove, a wavy annular groove, an irregularly shaped annular groove, or a combination thereof. According to this embodiment, the annular groove 116 is a concentric groove, and the spacing between the adjacent two annular grooves 116 is substantially equal, but does not limit the scope of the present invention. The annular groove 116 is primarily used to provide transport and distribution of the slurry.

研磨層112的旋轉中心C1與排列中心C2彼此偏離不重疊,旋轉中心C1與排列中心C2之間具有間距b。因此,在研磨過程中,環狀溝槽116與研磨層112彼此之間呈現非同心(eccentric)的相對運動狀態。如此一來,可以減少研磨物件中心C3固定地與研磨墊110上的溝槽處或是研磨面接觸的情形發生。因此能夠使研磨物件中心C3與研磨物件中心之外的附近區域的研磨率較為一致,以提供較佳的研磨均勻度。在本實施例中,間距b例如是介於2至20 mm。當間距b越大,則表面排列中心C2偏離旋轉中心C1的程度越大。The rotation center C1 and the arrangement center C2 of the polishing layer 112 are not offset from each other, and a pitch b is provided between the rotation center C1 and the arrangement center C2. Thus, during the grinding process, the annular groove 116 and the abrasive layer 112 exhibit a non-concentric relative motion state with each other. In this way, it can be reduced that the center of the abrasive article C3 is fixedly in contact with the groove on the polishing pad 110 or the abrasive surface. Therefore, the polishing rate of the center of the abrasive article C3 and the vicinity of the center of the abrasive article can be made uniform to provide better polishing uniformity. In the present embodiment, the pitch b is, for example, 2 to 20 mm. When the pitch b is larger, the degree to which the surface alignment center C2 deviates from the rotation center C1 is larger.

本實施例之研磨墊110更包括至少一個徑向延伸溝槽118位於研磨層112中。研磨物件104在研磨墊110上具有一中心軌跡T,此中心軌跡T為研磨物件中心C3經由研磨墊110旋轉,而在研磨墊110上所經過的軌跡。換言之,當研磨物件104在研磨墊110上進行旋轉研磨之時,研磨物件中心C3於研磨墊110上所經之處會形成中心軌跡T。徑向延伸溝槽118與中心軌跡T具有多個交叉點。也就是說,徑向延伸溝槽118至少對應至研磨物件中心C3之位置,徑向延伸溝槽118的分布區域例如是對應至研磨物件中心C3±40mm的區域。在一實施例中,研磨墊110之半徑為R,研磨物件中心C3之位置例如是至少對應至研磨墊110二分之一半徑(R/2)處,徑向延伸溝槽118的分布區域例如是R/2±40 mm。在研磨過程,經研磨墊110的旋轉,上述徑向延伸溝槽118使得研磨物件中心C3所經過溝槽處及研磨面的次數增加,減少與研磨物件中心之外的附近區域所經過溝槽處及研磨面的次數的差異,因此可以得到較佳的研磨均勻度。The polishing pad 110 of the present embodiment further includes at least one radially extending trench 118 in the polishing layer 112. The abrasive article 104 has a central track T on the polishing pad 110 that is the trajectory that the abrasive article center C3 passes through the polishing pad 110 and passes over the polishing pad 110. In other words, when the abrasive article 104 is rotationally polished on the polishing pad 110, the center of the abrasive article C3 where it passes over the polishing pad 110 forms a central trajectory T. The radially extending groove 118 has a plurality of intersections with the center track T. That is, the radially extending groove 118 corresponds at least to the position of the center of the abrasive article C3, and the distribution area of the radially extending groove 118 is, for example, a region corresponding to the center of the abrasive article C3 ± 40 mm. In one embodiment, the radius of the polishing pad 110 is R, and the position of the center of the abrasive article C3 is, for example, at least corresponding to a radius (R/2) of the one-half of the polishing pad 110, and the distribution area of the radially extending groove 118 is, for example. It is R/2±40 mm. During the grinding process, through the rotation of the polishing pad 110, the radially extending groove 118 increases the number of times the center of the abrasive article C3 passes through the groove and the polishing surface, and reduces the groove passing through the vicinity of the center of the abrasive article. And the difference in the number of times of the polished surface, so that a better polishing uniformity can be obtained.

徑向延伸溝槽118可為具有兩個端點(118a、118b)的開放式溝槽,例如是曲線形溝槽,如圖1A所示。徑向延伸溝槽118的一端點位於研磨墊110較小半徑處,另一端點位於研磨墊110較大半徑處。徑向延伸溝槽118由研磨層112的旋轉中心C1為中心向外呈螺旋狀分布。在一實施例中,徑向延伸溝槽118由內向外具有一彎曲方向,而且彎曲方向與研磨墊110之旋轉方向D相同。舉例來說,研磨墊100之旋轉方向D為正向(即逆時針方向),徑 向延伸溝槽118之彎曲方向亦為正向(即逆時針方向)。然而,本創作不限於此。根據其他實施例,徑向延伸溝槽118之彎曲方向亦可選擇為負向(即順時針方向),以提供研磨液具有不同的流場分布,如圖2所示。前述的開放式徑向延伸溝槽118是以曲線形為例說明。然而,本創作不限於此。根據其他實施例,開放式徑向延伸溝槽118也可以是直線形溝槽、折線形溝槽、波浪形溝槽、不規則形開放式溝槽、或是其組合。The radially extending trench 118 can be an open trench having two end points (118a, 118b), such as a curved trench, as shown in Figure 1A. One end of the radially extending groove 118 is located at a smaller radius of the polishing pad 110 and the other end is located at a larger radius of the polishing pad 110. The radially extending grooves 118 are spirally distributed outward from the center of rotation C1 of the polishing layer 112. In one embodiment, the radially extending grooves 118 have a curved direction from the inside to the outside, and the direction of the bending is the same as the direction of rotation D of the polishing pad 110. For example, the rotation direction D of the polishing pad 100 is positive (ie, counterclockwise), and the diameter The direction of the bend to the extension groove 118 is also positive (i.e., counterclockwise). However, this creation is not limited to this. According to other embodiments, the direction of curvature of the radially extending grooves 118 may also be selected to be negative (i.e., clockwise) to provide a different flow field distribution for the slurry, as shown in FIG. The aforementioned open radial extending groove 118 is illustrated by a curved shape. However, this creation is not limited to this. According to other embodiments, the open radial extension grooves 118 may also be linear grooves, polygonal grooves, undulating grooves, irregular open grooves, or combinations thereof.

在另一實施例中,徑向延伸溝槽118可為不具有端點的封閉式溝槽,例如是圓形的徑向延伸溝槽118,如圖3所示。圓形的徑向延伸溝槽118位於研磨層112中,並與研磨物件104的中心軌跡T具有多個交叉點。也就是說,圓形的徑向延伸溝槽118至少對應至研磨物件中心C3之位置,圓形的徑向延伸溝槽118的分布區域例如是對應至研磨物件中心C3±40mm的區域。在一實施例中,研磨墊110之半徑為R,研磨物件中心C3之位置例如是至少對應至研磨墊110二分之一半徑(R/2)處,圓形的徑向延伸溝槽118的分布區域例如是R/2±40mm。在研磨過程,經研磨墊110的旋轉,上述圓形的徑向延伸溝槽118使得研磨物件中心C3所經過溝槽處及研磨面的次數增加,減少與研磨物件中心之外的附近區域所經過溝槽處及研磨面的次數的差異,因此可以得到較佳的研磨均勻度。前述的封閉式徑向延伸溝槽118是以圓形為例說明。然而,本創作不限於此。根據其他實施例,封閉式徑向延伸溝槽118也可以是橢圓形溝槽、多角形溝槽、波浪環形溝槽、不規則形 封閉式溝槽、或是其組合。In another embodiment, the radially extending trenches 118 can be closed trenches without end points, such as circular radially extending trenches 118, as shown in FIG. A circular radially extending groove 118 is located in the abrasive layer 112 and has a plurality of intersections with the central trajectory T of the abrasive article 104. That is, the circular radially extending groove 118 corresponds at least to the position of the center of the abrasive article C3, and the distribution of the circular radially extending groove 118 is, for example, a region corresponding to the center of the abrasive article C3 ± 40 mm. In one embodiment, the radius of the polishing pad 110 is R, and the position of the center of the abrasive article C3 is, for example, at least corresponding to a radius (R/2) of the polishing pad 110, the circular radially extending groove 118. The distribution area is, for example, R/2±40 mm. During the grinding process, through the rotation of the polishing pad 110, the circular radially extending groove 118 increases the number of times the grinding object center C3 passes through the groove and the grinding surface, and reduces the passage of the vicinity of the center of the abrasive article. The difference in the number of times between the groove and the polished surface makes it possible to obtain a better polishing uniformity. The aforementioned closed radial extending groove 118 is exemplified by a circular shape. However, this creation is not limited to this. According to other embodiments, the enclosed radially extending grooves 118 may also be elliptical grooves, polygonal grooves, wavy annular grooves, irregular shapes Enclosed grooves, or a combination thereof.

本創作實施例中之研磨墊110與傳統研磨墊的比較如下表,在相同的研磨條件下,本創作之研磨墊110的研磨率差異大幅改善,本創作之研磨墊110相較於傳統研磨墊具有較佳均勻度。The comparison between the polishing pad 110 and the conventional polishing pad in the present embodiment is as follows. Under the same grinding conditions, the difference in the polishing rate of the polishing pad 110 of the present invention is greatly improved. The polishing pad 110 of the present invention is superior to the conventional polishing pad. Has a better uniformity.

前述實施例圖中所繪示環狀溝槽116及徑向延伸溝槽118的數目僅做說明之用,本創作不限制環狀溝槽116及徑向延伸溝槽118的數目。此外,徑向延伸溝槽118除了以旋轉中心C1為中心向外分布,亦可選擇以排列中心C2為中心向外分布,或是選擇不重疊於旋轉中心C1及排列中心C2的另一點為中心向外分布。再者,徑向延伸溝槽118若為複數個,則這些徑向延伸溝槽118不限於具有相同的延伸長度,可選擇為具有不同的延伸長度,甚至這些徑向延伸溝槽118可選擇為具有相同內徑及外徑的延伸範圍或不同內徑及外徑的延伸範圍。The number of annular grooves 116 and radially extending grooves 118 illustrated in the foregoing embodiments is for illustrative purposes only, and the present disclosure does not limit the number of annular grooves 116 and radially extending grooves 118. Further, the radially extending grooves 118 are distributed outwardly around the center of rotation C1, and may be selected to be distributed outwardly around the center C2 of the arrangement, or may be centered on another point that does not overlap the center of rotation C1 and the center of arrangement C2. Outward distribution. Moreover, if there are a plurality of radially extending grooves 118, the radially extending grooves 118 are not limited to have the same extension length, and may have different extension lengths, and even these radial extension grooves 118 may be selected as An extension of the same inner and outer diameter or an extension of different inner and outer diameters.

本創作之研磨墊中的溝槽製作,可選擇以機械方式(例 如是使用配備鑽頭或鋸片的銑床)、模具轉印方式、或是蝕刻方式(例如是使用化學蝕刻或是雷射加工)製作,但不以此限定本創作之範圍,亦可選擇其他形成方式製作溝槽。The groove in the polishing pad of this creation can be selected mechanically (for example) If using a milling machine equipped with a drill or saw blade, mold transfer method, or etching method (for example, using chemical etching or laser processing), but not limiting the scope of this creation, you can also choose other forms of formation. Make grooves.

本實施例之研磨系統100用以對研磨物件進行研磨,且可應用於如半導體、積體電路、微機電、能源轉換、通訊、光學、儲存碟片、及顯示器等元件的製作中所使用之研磨製程。因此,製作上述這些元件所使用的研磨物件104可以是半導體晶圓、ⅢV族晶圓、儲存元件載體、陶瓷基底、高分子聚合物基底、及玻璃基底等,但並非用以限定本創作之範圍。The polishing system 100 of the present embodiment is used for grinding abrasive articles, and can be applied to the manufacture of components such as semiconductors, integrated circuits, MEMS, energy conversion, communication, optics, storage disks, and displays. Grinding process. Therefore, the abrasive article 104 used for fabricating the above-mentioned components may be a semiconductor wafer, a IIIV wafer, a storage component carrier, a ceramic substrate, a polymer substrate, a glass substrate, etc., but is not intended to limit the scope of the present invention. .

綜上所述,本創作之研磨墊具有與旋轉中心呈非同心圓排列的環狀溝槽,以及徑向延伸溝槽與中心軌跡具有多個交叉點,因此在研磨過程中,能夠增加研磨物件中心所經過溝槽處及研磨面的次數,以提供較佳的研磨均勻度。In summary, the polishing pad of the present invention has an annular groove arranged in a non-concentric circle with the center of rotation, and the radially extending groove has a plurality of intersection points with the center track, so that the grinding object can be added during the grinding process. The number of passes through the groove and the surface of the center to provide better grinding uniformity.

雖然本創作已以實施例揭露如上,然其並非用以限定本創作,任何所屬技術領域中具有通常知識者,在不脫離本創作的精神和範圍內,當可作些許的更動與潤飾,故本創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person having ordinary knowledge in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of this creation is subject to the definition of the scope of the patent application.

100‧‧‧研磨系統100‧‧‧ grinding system

104‧‧‧研磨物件104‧‧‧Abrased objects

110‧‧‧研磨墊110‧‧‧ polishing pad

112‧‧‧研磨層112‧‧‧Abrasive layer

116‧‧‧環狀溝槽116‧‧‧Round groove

118‧‧‧徑向延伸溝槽118‧‧‧radial extension groove

118a、118b‧‧‧端點118a, 118b‧‧‧ endpoint

A-A’‧‧‧剖線A-A’‧‧‧ cut line

b‧‧‧間距B‧‧‧ spacing

C1‧‧‧旋轉中心C1‧‧‧ Rotation Center

C2‧‧‧排列中心C2‧‧‧ alignment center

C3‧‧‧研磨物件中心C3‧‧‧Abrasion Object Center

T‧‧‧研磨物件之中心軌跡T‧‧‧Center track of abrasive objects

R‧‧‧研磨墊之半徑Radius of R‧‧‧ polishing pad

D‧‧‧旋轉方向D‧‧‧Rotation direction

Claims (28)

一種研磨墊,適用於研磨一研磨物件,該研磨物件在該研磨墊上具有一中心軌跡,該研磨墊包括:一研磨層,具有一旋轉中心以及一排列中心,該旋轉中心與該排列中心之間具有一間距;多個環狀溝槽,位於該研磨層中,該些環狀溝槽以該排列中心為中心呈現同心排列;以及至少一徑向延伸溝槽,位於該研磨層中,且該徑向延伸溝槽與該中心軌跡具有多個交叉點。A polishing pad adapted to grind a polishing object, the abrasive article having a central track on the polishing pad, the polishing pad comprising: an abrasive layer having a center of rotation and an alignment center, the center of rotation and the center of the arrangement Having a spacing; a plurality of annular grooves in the polishing layer, the annular grooves are arranged concentrically centered on the center of the arrangement; and at least one radially extending groove is located in the polishing layer, and the The radially extending groove has a plurality of intersections with the central trajectory. 如申請專利範圍第1項所述的研磨墊,其中該間距為介於2至20 mm。The polishing pad of claim 1, wherein the spacing is between 2 and 20 mm. 如申請專利範圍第1項所述的研磨墊,其中該環狀溝槽為圓形溝槽、橢圓形溝槽、多角形溝槽、波浪環形溝槽、不規則形環狀溝槽、或其組合。The polishing pad of claim 1, wherein the annular groove is a circular groove, an elliptical groove, a polygonal groove, a wavy annular groove, an irregular annular groove, or combination. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為一開放式徑向延伸溝槽。The polishing pad of claim 1, wherein the radially extending groove is an open radially extending groove. 如申請專利範圍第4項所述的研磨墊,其中該開放式徑向延伸溝槽為直線形溝槽、折線形溝槽、波浪形溝槽、不規則形開放式溝槽、或其組合。The polishing pad of claim 4, wherein the open radial extending groove is a linear groove, a polygonal groove, a wave groove, an irregular open groove, or a combination thereof. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為一封閉式徑向延伸溝槽。The polishing pad of claim 1, wherein the radially extending groove is a closed radial extending groove. 如申請專利範圍第6項所述的研磨墊,其中該封閉式徑向 延伸溝槽為圓形溝槽、橢圓形溝槽、多角形溝槽、波浪環形溝槽、不規則形封閉式溝槽、或其組合。The polishing pad of claim 6, wherein the closed radial The extension grooves are circular grooves, elliptical grooves, polygonal grooves, wavy annular grooves, irregular closed grooves, or a combination thereof. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為以該旋轉中心、該排列中心、或不重疊於該旋轉中心及該排列中心的另一點為中心向外分布。The polishing pad of claim 1, wherein the radially extending groove is outwardly distributed centering on the center of rotation, the center of the arrangement, or another point that does not overlap the center of rotation and the center of the arrangement. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為至少對應至該研磨物件之中心。The polishing pad of claim 1, wherein the radially extending groove corresponds at least to a center of the abrasive article. 如申請專利範圍第9項所述的研磨墊,其中該徑向延伸溝槽為對應至該研磨物件之中心±40mm的區域。The polishing pad of claim 9, wherein the radially extending groove is a region corresponding to a center of the abrasive article by ±40 mm. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為至少對應至該研磨墊二分之一半徑處。The polishing pad of claim 1, wherein the radially extending groove is at least corresponding to a radius of one half of the polishing pad. 如申請專利範圍第11項所述的研磨墊,其中該徑向延伸溝槽為對應至該研磨墊二分之一半徑±40mm的區域。The polishing pad of claim 11, wherein the radially extending groove is a region corresponding to a radius of ±40 mm of the polishing pad. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為複數個,各該些徑向延伸溝槽為具有相同的延伸長度或具有不同的延伸長度。The polishing pad of claim 1, wherein the radially extending grooves are plural, and each of the radially extending grooves has the same extension length or has a different extension length. 如申請專利範圍第1項所述的研磨墊,其中該徑向延伸溝槽為複數個,各該些徑向延伸溝槽為具有相同內徑及外徑的延伸範圍或具有不同內徑及外徑的延伸範圍。The polishing pad of claim 1, wherein the radially extending grooves are plural, and each of the radially extending grooves has an extension of the same inner diameter and outer diameter or has different inner diameters and outer diameters. The extension of the path. 一種研磨系統,適用於研磨一研磨物件,該研磨系統包括:一載具,用於固持該研磨物件:以及 一研磨墊,固定於具有一旋轉方向之一研磨平台上,該研磨物件在該研磨墊上具有一中心軌跡,該研磨墊包括:一研磨層,具有一旋轉中心以及一排列中心,該旋轉中心與該排列中心間具有一間距;多個環狀溝槽,位於該研磨層中,該些環狀溝槽以該排列中心為中心呈同心圓排列;以及至少一徑向延伸溝槽,位於該研磨層中,且該徑向延伸溝槽與該中心軌跡具有多個交叉點。A grinding system suitable for grinding an abrasive article, the polishing system comprising: a carrier for holding the abrasive article: a polishing pad fixed on a polishing platform having a rotation direction, the abrasive article having a central track on the polishing pad, the polishing pad comprising: an abrasive layer having a center of rotation and an arrangement center, the center of rotation Between the alignment centers, a plurality of annular grooves are disposed in the polishing layer, the annular grooves are arranged concentrically around the center of the arrangement; and at least one radially extending groove is located in the polishing In the layer, and the radially extending trench has a plurality of intersections with the central track. 如申請專利範圍第15項所述的研磨系統,其中該間距為介於2至20 mm。The grinding system of claim 15 wherein the spacing is between 2 and 20 mm. 如申請專利範圍第15項所述的研磨系統,其中該環狀溝槽為圓形溝槽、橢圓形溝槽、多角形溝槽、波浪環形溝槽、不規則形環狀溝槽、或其組合。The grinding system of claim 15, wherein the annular groove is a circular groove, an elliptical groove, a polygonal groove, a wavy annular groove, an irregularly shaped annular groove, or combination. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為一開放式徑向延伸溝槽。The grinding system of claim 15 wherein the radially extending groove is an open radially extending groove. 如申請專利範圍第18項所述的研磨系統,其中該開放式徑向延伸溝槽為直線形溝槽、折線形溝槽、波浪形溝槽、不規則形開放式溝槽、或其組合。The grinding system of claim 18, wherein the open radial extending groove is a linear groove, a polygonal groove, a wavy groove, an irregular open groove, or a combination thereof. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為一封閉式徑向延伸溝槽。The grinding system of claim 15 wherein the radially extending groove is a closed radially extending groove. 如申請專利範圍第20項所述的研磨系統,其中該封閉式徑向延伸溝槽為圓形溝槽、橢圓形溝槽、多角形溝槽、波浪環形 溝槽、不規則形封閉式溝槽、或其組合。The grinding system of claim 20, wherein the closed radial extending groove is a circular groove, an elliptical groove, a polygonal groove, a wavy ring A groove, an irregularly shaped closed groove, or a combination thereof. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為以該旋轉中心、該排列中心、或不重疊於該旋轉中心及該排列中心的另一點為中心向外分布。The polishing system of claim 15, wherein the radially extending groove is outwardly distributed centering on the center of rotation, the center of the arrangement, or another point that does not overlap the center of rotation and the center of the arrangement. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為至少對應至該研磨物件之中心。The grinding system of claim 15 wherein the radially extending groove is at least corresponding to a center of the abrasive article. 如申請專利範圍第23項所述的研磨系統,其中該徑向延伸溝槽為對應至該研磨物件之中心±40mm的區域。The grinding system of claim 23, wherein the radially extending groove is a region corresponding to a center of the abrasive article by ±40 mm. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為至少對應至該研磨墊二分之一半徑處。The grinding system of claim 15 wherein the radially extending groove is at least corresponding to a radius of the one half of the polishing pad. 如申請專利範圍第25項所述的研磨系統,其中該徑向延伸溝槽為對應至該研磨墊二分之一半徑±40mm的區域。The grinding system of claim 25, wherein the radially extending groove is a region corresponding to a radius of one-half of a radius of the polishing pad of ±40 mm. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為複數個,各該些徑向延伸溝槽為具有相同的延伸長度或具有不同的延伸長度。The grinding system of claim 15, wherein the radially extending grooves are plural, each of the radially extending grooves having the same extension length or having different extension lengths. 如申請專利範圍第15項所述的研磨系統,其中該徑向延伸溝槽為複數個,各該些徑向延伸溝槽為具有相同內徑及外徑的延伸範圍或具有不同內徑及外徑的延伸範圍。The grinding system of claim 15, wherein the radially extending grooves are plural, each of the radially extending grooves having an extension of the same inner diameter and outer diameter or having different inner diameters and outer diameters The extension of the path.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549781B (en) * 2015-08-07 2016-09-21 智勝科技股份有限公司 Polishing pad, polishing system and polishing method
US10586708B2 (en) 2017-06-14 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Uniform CMP polishing method
US10777418B2 (en) 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10857647B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10857648B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US10861702B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
TWI718663B (en) * 2019-09-11 2021-02-11 智勝科技股份有限公司 Polishing pad, polishing system and polishing method
CN112809550A (en) * 2020-12-31 2021-05-18 湖北鼎汇微电子材料有限公司 Polishing pad
WO2023013576A1 (en) 2021-08-04 2023-02-09 株式会社クラレ Polishing pad

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549781B (en) * 2015-08-07 2016-09-21 智勝科技股份有限公司 Polishing pad, polishing system and polishing method
US10040167B2 (en) 2015-08-07 2018-08-07 Iv Technologies Co., Ltd. Polishing pad, polishing system and polishing method
US10586708B2 (en) 2017-06-14 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Uniform CMP polishing method
US10777418B2 (en) 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10857647B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10857648B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US10861702B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
TWI718663B (en) * 2019-09-11 2021-02-11 智勝科技股份有限公司 Polishing pad, polishing system and polishing method
CN112809550A (en) * 2020-12-31 2021-05-18 湖北鼎汇微电子材料有限公司 Polishing pad
WO2023013576A1 (en) 2021-08-04 2023-02-09 株式会社クラレ Polishing pad

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