WO2011008918A3 - Grooved cmp polishing pad - Google Patents

Grooved cmp polishing pad Download PDF

Info

Publication number
WO2011008918A3
WO2011008918A3 PCT/US2010/042073 US2010042073W WO2011008918A3 WO 2011008918 A3 WO2011008918 A3 WO 2011008918A3 US 2010042073 W US2010042073 W US 2010042073W WO 2011008918 A3 WO2011008918 A3 WO 2011008918A3
Authority
WO
WIPO (PCT)
Prior art keywords
width
landing
grooves
spiral
defines
Prior art date
Application number
PCT/US2010/042073
Other languages
French (fr)
Other versions
WO2011008918A2 (en
Inventor
Ching-Ming Tsai
Fred Sun
Sheng-huan LIU
Jia-Cheng Hsu
Ananth Naman
Hao-Kuang Chiu
Dinesh Khanna
Original Assignee
Cabot Microelectronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corporation filed Critical Cabot Microelectronics Corporation
Priority to SG2012002234A priority Critical patent/SG177625A1/en
Priority to CN2010800414168A priority patent/CN102498549A/en
Priority to KR1020127003925A priority patent/KR101478414B1/en
Priority to JP2012520766A priority patent/JP2012533888A/en
Publication of WO2011008918A2 publication Critical patent/WO2011008918A2/en
Publication of WO2011008918A3 publication Critical patent/WO2011008918A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.
PCT/US2010/042073 2009-07-16 2010-07-15 Grooved cmp polishing pad WO2011008918A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SG2012002234A SG177625A1 (en) 2009-07-16 2010-07-15 Grooved cmp polishing pad
CN2010800414168A CN102498549A (en) 2009-07-16 2010-07-15 Grooved cmp polishing pad
KR1020127003925A KR101478414B1 (en) 2009-07-16 2010-07-15 Grooved cmp polishing pad
JP2012520766A JP2012533888A (en) 2009-07-16 2010-07-15 Grooved CMP polished PAD

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27106809P 2009-07-16 2009-07-16
US61/271,068 2009-07-16

Publications (2)

Publication Number Publication Date
WO2011008918A2 WO2011008918A2 (en) 2011-01-20
WO2011008918A3 true WO2011008918A3 (en) 2011-04-28

Family

ID=43450188

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/042073 WO2011008918A2 (en) 2009-07-16 2010-07-15 Grooved cmp polishing pad

Country Status (7)

Country Link
US (1) US20110014858A1 (en)
JP (1) JP2012533888A (en)
KR (1) KR101478414B1 (en)
CN (1) CN102498549A (en)
SG (2) SG177625A1 (en)
TW (1) TWI519384B (en)
WO (1) WO2011008918A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009018434B4 (en) * 2009-04-22 2023-11-30 Ev Group Gmbh Receiving device for holding semiconductor substrates
DE102011082777A1 (en) * 2011-09-15 2012-02-09 Siltronic Ag Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer
JP2014124718A (en) * 2012-12-26 2014-07-07 Toyo Tire & Rubber Co Ltd Method of manufacturing laminated abrasive pad
TWI599447B (en) * 2013-10-18 2017-09-21 卡博特微電子公司 Cmp polishing pad having edge exclusion region of offset concentric groove pattern
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10875146B2 (en) * 2016-03-24 2020-12-29 Rohm And Haas Electronic Materials Cmp Holdings Debris-removal groove for CMP polishing pad
USD816774S1 (en) * 2016-03-25 2018-05-01 Craig Franklin Edevold Spiral pattern for cribbage board
SG11201906131WA (en) * 2017-01-20 2019-08-27 Applied Materials Inc A thin plastic polishing article for cmp applications
USD855110S1 (en) * 2017-01-31 2019-07-30 Gary Peterson Game board
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
CN112720282B (en) * 2020-12-31 2022-04-08 湖北鼎汇微电子材料有限公司 Polishing pad
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113829176B (en) * 2021-08-31 2023-04-14 北京航天控制仪器研究所 Grinding flat plate for grinding and polishing beryllium mirror body and grinding and polishing method
CN114274043B (en) * 2021-12-29 2023-02-24 湖北鼎汇微电子材料有限公司 Polishing pad

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
KR20030005405A (en) * 2000-05-27 2003-01-17 로델 홀딩스 인코포레이티드 Grooved polishing pads for chemical mechanical planarization
JP2004034176A (en) * 2002-06-28 2004-02-05 Jsr Corp Polishing pad
JP2004167605A (en) * 2002-11-15 2004-06-17 Rodel Nitta Co Polishing pad and polishing device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
CN100356515C (en) * 2002-04-03 2007-12-19 东邦工程株式会社 Polishing pad and semiconductor substrate manufacturing method using the polishing pad
TWI250572B (en) * 2002-06-03 2006-03-01 Jsr Corp Polishing pad and multi-layer polishing pad
JP3849582B2 (en) * 2002-06-03 2006-11-22 Ｊｓｒ株式会社 Polishing pad and multilayer polishing pad
JP2004071985A (en) * 2002-08-08 2004-03-04 Jsr Corp Working method for grinding pad for semiconductor wafer and grinding pad for semiconductor wafer
JP3872081B2 (en) * 2004-12-29 2007-01-24 東邦エンジニアリング株式会社 Polishing pad
CN101024260A (en) * 2006-02-24 2007-08-29 三芳化学工业股份有限公司 Polishign cushion with surface grains and its making method and apparatus
US8192257B2 (en) * 2006-04-06 2012-06-05 Micron Technology, Inc. Method of manufacture of constant groove depth pads

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
KR20030005405A (en) * 2000-05-27 2003-01-17 로델 홀딩스 인코포레이티드 Grooved polishing pads for chemical mechanical planarization
JP2004034176A (en) * 2002-06-28 2004-02-05 Jsr Corp Polishing pad
JP2004167605A (en) * 2002-11-15 2004-06-17 Rodel Nitta Co Polishing pad and polishing device

Also Published As

Publication number Publication date
CN102498549A (en) 2012-06-13
TW201121711A (en) 2011-07-01
JP2012533888A (en) 2012-12-27
KR20120042985A (en) 2012-05-03
US20110014858A1 (en) 2011-01-20
TWI519384B (en) 2016-02-01
SG10201404152UA (en) 2014-09-26
SG177625A1 (en) 2012-02-28
WO2011008918A2 (en) 2011-01-20
KR101478414B1 (en) 2014-12-31

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