JP2009535816A5 - - Google Patents
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- Publication number
- JP2009535816A5 JP2009535816A5 JP2009507731A JP2009507731A JP2009535816A5 JP 2009535816 A5 JP2009535816 A5 JP 2009535816A5 JP 2009507731 A JP2009507731 A JP 2009507731A JP 2009507731 A JP2009507731 A JP 2009507731A JP 2009535816 A5 JP2009535816 A5 JP 2009535816A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polishing
- polishing system
- combinations
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 2
- JCEZOHLWDIONSP-UHFFFAOYSA-N 3-[2-[2-(3-aminopropoxy)ethoxy]ethoxy]propan-1-amine Chemical compound NCCCOCCOCCOCCCN JCEZOHLWDIONSP-UHFFFAOYSA-N 0.000 claims 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical group 0.000 claims 1
- 150000001414 amino alcohols Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 150000003141 primary amines Chemical class 0.000 claims 1
- 150000003335 secondary amines Chemical class 0.000 claims 1
- 150000003512 tertiary amines Chemical class 0.000 claims 1
- MOUZFESVZCQYOG-UHFFFAOYSA-N CC(COC(C)CN)N Chemical compound CC(COC(C)CN)N MOUZFESVZCQYOG-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/412,369 US7585340B2 (en) | 2006-04-27 | 2006-04-27 | Polishing composition containing polyether amine |
| US11/412,369 | 2006-04-27 | ||
| PCT/US2007/009505 WO2007127121A1 (en) | 2006-04-27 | 2007-04-18 | Polishing composition containing polyether amine |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009535816A JP2009535816A (ja) | 2009-10-01 |
| JP2009535816A5 true JP2009535816A5 (enExample) | 2010-03-25 |
| JP5175270B2 JP5175270B2 (ja) | 2013-04-03 |
Family
ID=38646979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009507731A Active JP5175270B2 (ja) | 2006-04-27 | 2007-04-18 | ポリエーテルアミンを含有する研磨組成物 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7585340B2 (enExample) |
| EP (1) | EP2029689B1 (enExample) |
| JP (1) | JP5175270B2 (enExample) |
| KR (1) | KR101371850B1 (enExample) |
| CN (1) | CN101432384B (enExample) |
| IL (1) | IL194461A (enExample) |
| MY (2) | MY160946A (enExample) |
| SG (1) | SG171622A1 (enExample) |
| TW (1) | TWI351430B (enExample) |
| WO (1) | WO2007127121A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US8349207B2 (en) * | 2007-03-26 | 2013-01-08 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device |
| US8157876B2 (en) * | 2007-07-31 | 2012-04-17 | Cabot Microelectronics Corporation | Slurry composition containing non-ionic polymer and method for use |
| JP5220428B2 (ja) * | 2008-02-01 | 2013-06-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物を用いた研磨方法 |
| US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| US20140311044A1 (en) * | 2011-04-25 | 2014-10-23 | Bando Chemical Industries, Ltd. | Polishing film |
| US8999193B2 (en) * | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| JP6306383B2 (ja) * | 2014-03-17 | 2018-04-04 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| CN104650740B (zh) * | 2014-12-10 | 2017-07-14 | 深圳市力合材料有限公司 | 一种可实现快速稳定抛光的抛光液 |
| WO2016097915A1 (en) | 2014-12-16 | 2016-06-23 | Basf Se | Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium |
| JP2016154208A (ja) * | 2015-02-12 | 2016-08-25 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| CN119194461A (zh) * | 2016-08-24 | 2024-12-27 | Ppg工业俄亥俄公司 | 用于处理金属基材的碱性组合物 |
| US20180244955A1 (en) | 2017-02-28 | 2018-08-30 | Versum Materials Us, Llc | Chemical Mechanical Planarization of Films Comprising Elemental Silicon |
| US10106705B1 (en) * | 2017-03-29 | 2018-10-23 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods of use thereof |
| KR20180137167A (ko) * | 2017-06-16 | 2018-12-27 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| US10119048B1 (en) | 2017-07-31 | 2018-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low-abrasive CMP slurry compositions with tunable selectivity |
| US20200095502A1 (en) * | 2018-09-26 | 2020-03-26 | Versum Materials Us, Llc | High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP) |
| US12227673B2 (en) * | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| CN113004799A (zh) | 2019-12-19 | 2021-06-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US20220195242A1 (en) * | 2020-12-21 | 2022-06-23 | Fujifilm Electric Materials U.S.A., Inc. | Chemical mechanical polishing compositions and methods of use thereof |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5985999A (en) * | 1993-07-13 | 1999-11-16 | Huntsman, Petrochemical Corporation | Dyeable polyolefin containing polyetheramine modified functionalized polyolefin |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6099604A (en) * | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
| US6179887B1 (en) * | 1999-02-17 | 2001-01-30 | 3M Innovative Properties Company | Method for making an abrasive article and abrasive articles thereof |
| ATE405618T1 (de) * | 1999-08-13 | 2008-09-15 | Cabot Microelectronics Corp | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung |
| US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
| CN100335580C (zh) * | 1999-08-13 | 2007-09-05 | 卡伯特微电子公司 | 含有阻化化合物的抛光系统及其使用方法 |
| US6376381B1 (en) * | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| TWI228538B (en) * | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
| US6555510B2 (en) * | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
| KR100497608B1 (ko) * | 2002-08-05 | 2005-07-01 | 삼성전자주식회사 | 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법 |
| JP2004247542A (ja) * | 2003-02-14 | 2004-09-02 | Kao Corp | 精密部品用基板の製造方法 |
| TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
| US7066801B2 (en) * | 2003-02-21 | 2006-06-27 | Dow Global Technologies, Inc. | Method of manufacturing a fixed abrasive material |
| US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
| JP4267348B2 (ja) * | 2003-03-05 | 2009-05-27 | 花王株式会社 | 研磨基板の製造方法 |
| US7160807B2 (en) * | 2003-06-30 | 2007-01-09 | Cabot Microelectronics Corporation | CMP of noble metals |
| US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
| JPWO2006098141A1 (ja) | 2005-03-16 | 2008-08-21 | 旭硝子株式会社 | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| JP2006278522A (ja) * | 2005-03-28 | 2006-10-12 | Seimi Chem Co Ltd | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
-
2006
- 2006-04-27 US US11/412,369 patent/US7585340B2/en active Active
-
2007
- 2007-03-30 TW TW096111455A patent/TWI351430B/zh active
- 2007-04-18 MY MYPI2011005441A patent/MY160946A/en unknown
- 2007-04-18 JP JP2009507731A patent/JP5175270B2/ja active Active
- 2007-04-18 EP EP07755680.1A patent/EP2029689B1/en active Active
- 2007-04-18 SG SG201102969-1A patent/SG171622A1/en unknown
- 2007-04-18 KR KR1020087028901A patent/KR101371850B1/ko active Active
- 2007-04-18 WO PCT/US2007/009505 patent/WO2007127121A1/en not_active Ceased
- 2007-04-18 MY MYPI20084283A patent/MY146591A/en unknown
- 2007-04-18 CN CN2007800150365A patent/CN101432384B/zh active Active
-
2008
- 2008-10-02 IL IL194461A patent/IL194461A/en active IP Right Grant
-
2009
- 2009-07-29 US US12/462,067 patent/US8741009B2/en active Active
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