JP2006520530A5 - - Google Patents

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Publication number
JP2006520530A5
JP2006520530A5 JP2006503246A JP2006503246A JP2006520530A5 JP 2006520530 A5 JP2006520530 A5 JP 2006520530A5 JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006520530 A5 JP2006520530 A5 JP 2006520530A5
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Japan
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polishing
acid
dielectric layer
group
substrate
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JP2006503246A
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JP4927526B2 (ja
JP2006520530A (ja
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Priority claimed from US10/356,970 external-priority patent/US7071105B2/en
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JP2006503246A 2003-02-03 2004-02-02 二酸化ケイ素層及び窒化ケイ素層を有する基材の研磨方法、及び化学機械的研磨系 Expired - Lifetime JP4927526B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/356,970 US7071105B2 (en) 2003-02-03 2003-02-03 Method of polishing a silicon-containing dielectric
US10/356,970 2003-02-03
PCT/US2004/002908 WO2004069947A1 (en) 2003-02-03 2004-02-02 Method of polishing a silicon-containing dielectric

Publications (3)

Publication Number Publication Date
JP2006520530A JP2006520530A (ja) 2006-09-07
JP2006520530A5 true JP2006520530A5 (enExample) 2007-03-29
JP4927526B2 JP4927526B2 (ja) 2012-05-09

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JP2006503246A Expired - Lifetime JP4927526B2 (ja) 2003-02-03 2004-02-02 二酸化ケイ素層及び窒化ケイ素層を有する基材の研磨方法、及び化学機械的研磨系

Country Status (7)

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US (4) US7071105B2 (enExample)
EP (1) EP1601735B1 (enExample)
JP (1) JP4927526B2 (enExample)
KR (2) KR20050098288A (enExample)
CN (1) CN1742066B (enExample)
TW (1) TWI283022B (enExample)
WO (1) WO2004069947A1 (enExample)

Families Citing this family (185)

* Cited by examiner, † Cited by third party
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