SG11201606187RA - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon filmsInfo
- Publication number
- SG11201606187RA SG11201606187RA SG11201606187RA SG11201606187RA SG11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon oxide
- containing silicon
- oxide dielectric
- substrates containing
- polysilicon films
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38071910P | 2010-09-08 | 2010-09-08 | |
| PCT/IB2011/053867 WO2012032451A1 (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201606187RA true SG11201606187RA (en) | 2016-09-29 |
Family
ID=44773986
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606187RA SG11201606187RA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| SG10201606566SA SG10201606566SA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606566SA SG10201606566SA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130168348A1 (en) |
| EP (1) | EP2428541B1 (en) |
| JP (1) | JP5965906B2 (en) |
| KR (1) | KR101906135B1 (en) |
| CN (1) | CN103080256B (en) |
| IL (1) | IL224645A (en) |
| MY (1) | MY175638A (en) |
| RU (1) | RU2573672C2 (en) |
| SG (2) | SG11201606187RA (en) |
| TW (1) | TWI525164B (en) |
| WO (1) | WO2012032451A1 (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9070632B2 (en) | 2010-10-07 | 2015-06-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| CN103249790A (en) | 2010-12-10 | 2013-08-14 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| CN103764775B (en) | 2011-09-07 | 2016-05-18 | 巴斯夫欧洲公司 | Chemically mechanical polishing (CMP) composition that comprises glycosides |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| CN104178033A (en) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
| US20150104940A1 (en) | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| KR102283723B1 (en) * | 2013-12-11 | 2021-07-30 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | Cleaning formulation for removing residues on surfaces |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9551075B2 (en) * | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
| EP4345142A3 (en) * | 2015-07-13 | 2024-05-29 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
| KR101628878B1 (en) * | 2015-09-25 | 2016-06-16 | 영창케미칼 주식회사 | Cmp slurry composition and polishing method using the same |
| KR101693278B1 (en) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | Slurry and substrate polishing method using the same |
| KR101871569B1 (en) * | 2016-02-25 | 2018-08-02 | 삼성에스디아이 주식회사 | Anisotropic conductive film and display device connected by the same |
| KR101827366B1 (en) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | Slurry composition for high step height polishing |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| KR102677797B1 (en) * | 2016-12-22 | 2024-06-24 | 주식회사 케이씨텍 | Polishing slurry composition for sti process |
| JP6761339B2 (en) | 2016-12-28 | 2020-09-23 | 花王株式会社 | Cerium oxide abrasive grains |
| WO2018125905A1 (en) * | 2016-12-30 | 2018-07-05 | Fujifilm Planar Solutions, LLC | Polishing compositions |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| WO2018179061A1 (en) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
| CN108587478B (en) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | Modified nano silicon dioxide composite polishing solution and application thereof |
| KR102296085B1 (en) | 2019-07-01 | 2021-09-01 | 남기호 | Smart trampoline and system for managing health using thereof |
| WO2021046080A1 (en) * | 2019-09-04 | 2021-03-11 | Cabot Microelectronics Corporation | Composition and method for polysilicon cmp |
| TWI767355B (en) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | High oxide removal rates shallow trench isolation chemical mechanical planarization compositions, system and method |
| CN113549399B (en) * | 2021-08-03 | 2022-02-15 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing composition suitable for rough polishing of silicon wafer and application thereof |
| CN115160933B (en) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof |
| CN116000782B (en) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition for metal alloy CMP |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2610705C3 (en) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Acid galvanic copper baths |
| US5478882A (en) | 1987-09-21 | 1995-12-26 | The Geon Company | Articles from reinforced plasticized polyvinyl halide resin |
| US5057560A (en) | 1987-10-05 | 1991-10-15 | Ciba-Geigy Corporation | Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate |
| FR2694939B1 (en) | 1992-08-20 | 1994-12-23 | Schlumberger Cie Dowell | Thermoviscosifying polymers, their synthesis and their applications in particular in the petroleum industry. |
| US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| ES2216490T3 (en) | 1998-02-24 | 2004-10-16 | Showa Denko Kabushiki Kaisha | ABRASIVE COMPOSITION TO POLISH A SEMICONDUCTOR DEVICE AND PROCEDURE TO PRODUCE A SEMICONDUCTOR DEVICE WITH THE SAME. |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| JP2000109816A (en) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | Preparation of polishing agent slurry |
| US6740590B1 (en) | 1999-03-18 | 2004-05-25 | Kabushiki Kaisha Toshiba | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing |
| US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
| US7425581B2 (en) | 1999-07-30 | 2008-09-16 | Universiteit Utrecht | Temperature sensitive polymers |
| US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| DE10006538C2 (en) | 2000-02-15 | 2002-11-28 | Forsch Pigmente Und Lacke E V | Process for coating particles with LCST polymers |
| JP2001240850A (en) | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | Dispersing agent for abrasive grain for polishing and slurry for polishing |
| KR100378180B1 (en) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same |
| TWI281493B (en) | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
| EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
| US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
| FR2824832B1 (en) | 2001-05-16 | 2005-05-27 | Oreal | WATER-SOLUBLE WATER-SOLUBLE SKELETOLYMERIC POLYMERS WITH LCST LATERAL UNITS, PROCESS FOR THEIR PREPARATION, AQUEOUS COMPOSITIONS CONTAINING SAME, AND USE THEREOF IN THE COSMETIC FIELD |
| DE10152993A1 (en) | 2001-10-26 | 2003-05-08 | Bayer Ag | Composition for the chemical mechanical polishing of metal and metal / dielectric structures with high selectivity |
| AU2003233400A1 (en) | 2002-03-15 | 2003-09-29 | The Penn State Research Foundation | Method for control of temperature-sensitivity of polymers in solution |
| JP3516446B2 (en) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | Photoresist stripping method |
| US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| JP4443864B2 (en) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | Cleaning solution for removing resist or etching residue and method for manufacturing semiconductor device |
| US6645265B1 (en) | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
| GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
| DE10243438A1 (en) | 2002-09-18 | 2004-03-25 | Merck Patent Gmbh | Surface modified effect pigment, useful in paints, printing inks and polymers as well as the laser marking of paper and plastic, is based on a platelet substrate sheathed with at least one layer of immobilized LCST- and/or UCST-polymers |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10254430A1 (en) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST polymers |
| DE10254432A1 (en) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | Lower critical solution temperature polymer for coating particles or surfaces, e.g. pigment particles, made by copolymerizing various functional vinyl monomers, e.g. N,N-dialkyl-acrylamide with maleic anhydride |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
| TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
| JP4363890B2 (en) * | 2003-04-30 | 2009-11-11 | 共栄社化学株式会社 | Water-based polishing fluid |
| KR100539983B1 (en) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Ceria Abrasives for CMP and Methods of Fabricating the Same |
| AU2003297104A1 (en) | 2003-07-09 | 2005-02-25 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
| JP2007531631A (en) * | 2003-07-11 | 2007-11-08 | ダブリュー・アール・グレイス・アンド・カンパニー−コネチカット | Abrasive particles for chemical mechanical polishing |
| KR100574225B1 (en) | 2003-10-10 | 2006-04-26 | 요업기술원 | Silica/Ceria/Silica Composite Particles for CMP slurry and Process for its production |
| DE10358092A1 (en) | 2003-12-10 | 2005-07-14 | Merck Patent Gmbh | Surface modified particles |
| KR100640600B1 (en) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same |
| JPWO2005110679A1 (en) * | 2004-05-19 | 2008-03-21 | 日産化学工業株式会社 | Polishing composition |
| JP4420391B2 (en) | 2004-05-28 | 2010-02-24 | 三井金属鉱業株式会社 | Cerium-based abrasive |
| US7026441B2 (en) | 2004-08-12 | 2006-04-11 | Intel Corporation | Thermoresponsive sensor comprising a polymer solution |
| US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
| KR100985609B1 (en) * | 2004-09-28 | 2010-10-05 | 히다치 가세고교 가부시끼가이샤 | Cmp polishing compound |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| TW200632147A (en) | 2004-11-12 | 2006-09-16 | ||
| KR100674927B1 (en) | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Slurry for CMP, methods for preparing the same, and methods for polishing substrate using the same |
| CN100375770C (en) * | 2005-01-17 | 2008-03-19 | 上海大学 | Core/shell nano particle grinding agent polishing solution composition and method for preparing same |
| JP4131270B2 (en) | 2005-03-01 | 2008-08-13 | トヨタ自動車株式会社 | Vehicle braking / driving force control device |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| US20060216935A1 (en) | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
| CN101155891B (en) * | 2005-04-04 | 2012-07-04 | 昭和电工株式会社 | Cerium oxide abrasives, process for production of the same, and use thereof |
| FR2889194A1 (en) | 2005-07-27 | 2007-02-02 | Rhodia Chimie Sa | BLOCK COPOLYMER COMPRISING LCST BLOCK HAVING LOW SOLUBILITE CRITICAL TEMPERATURE, FORMULATIONS COMPRISING THE COPOLYMER, AND USE FOR VECTORIZING AN ACTIVE INGREDIENT |
| JP2009503910A (en) | 2005-08-05 | 2009-01-29 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | High-throughput chemical mechanical polishing composition for metal film planarization |
| WO2007040118A1 (en) | 2005-09-30 | 2007-04-12 | Toyama Prefecture | Chip provided with film having hole pattern with the use of thermoresponsive polymer and method of producing the same |
| US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| WO2007055278A1 (en) | 2005-11-11 | 2007-05-18 | Hitachi Chemical Co., Ltd. | Polishing agent for silicon oxide, liquid additive, and method of polishing |
| EP1994112B1 (en) | 2006-01-25 | 2018-09-19 | LG Chem, Ltd. | Cmp slurry and method for polishing semiconductor wafer using the same |
| JP4985409B2 (en) * | 2006-01-31 | 2012-07-25 | 日立化成工業株式会社 | CMP polishing agent for polishing insulating film, polishing method, and semiconductor electronic component polished by the polishing method |
| US20070264827A1 (en) * | 2006-05-09 | 2007-11-15 | Promos Technologies Pte. Ltd. | Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing |
| KR100829594B1 (en) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | Slurry composition for chemical mechanical polishing and method of manufacturing a semiconductor memory device using the same |
| US9120952B2 (en) | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
| JP2008186898A (en) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | Composition for polishing |
| JP4367494B2 (en) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | Chemical mechanical polishing method for GaAs wafer |
| EP2437285A2 (en) * | 2007-03-26 | 2012-04-04 | JSR Corporation | Chemical mechanical polishing method for semiconductor device using an aqueous dispersion |
| KR101202720B1 (en) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method |
-
2011
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/en not_active Expired - Fee Related
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en active Application Filing
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/en not_active IP Right Cessation
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/en active IP Right Grant
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/en not_active Expired - Fee Related
- 2011-09-06 TW TW100132009A patent/TWI525164B/en not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201606566SA (en) | 2016-09-29 |
| MY175638A (en) | 2020-07-03 |
| IL224645A (en) | 2017-11-30 |
| TW201226491A (en) | 2012-07-01 |
| KR20130102587A (en) | 2013-09-17 |
| EP2428541A1 (en) | 2012-03-14 |
| JP5965906B2 (en) | 2016-08-10 |
| RU2573672C2 (en) | 2016-01-27 |
| WO2012032451A1 (en) | 2012-03-15 |
| KR101906135B1 (en) | 2018-10-10 |
| JP2013540849A (en) | 2013-11-07 |
| TWI525164B (en) | 2016-03-11 |
| CN103080256B (en) | 2015-06-24 |
| CN103080256A (en) | 2013-05-01 |
| RU2013115237A (en) | 2014-10-20 |
| US20130168348A1 (en) | 2013-07-04 |
| EP2428541B1 (en) | 2019-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL224645A (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films | |
| SG10201510122PA (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films | |
| EP2613910A4 (en) | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films | |
| IL224615B (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices | |
| SG10201506220PA (en) | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices | |
| EP2652063A4 (en) | Composition and method for polishing polysilicon | |
| EP2444996A4 (en) | Polishing liquid composition for silicon wafers | |
| TWI562365B (en) | Oxide semiconductor film and semiconductor device | |
| TWI562286B (en) | Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices | |
| EP3062337A4 (en) | Polishing liquid composition for silicon wafers | |
| EP2533293A4 (en) | Amorphous oxide thin film, thin film transistor comprising same, and process for production of the thin film transistor | |
| EP2302685A4 (en) | Oxide semiconductor and thin film transistor including same | |
| EP2611878A4 (en) | Silicon polishing compositions with high rate and low defectivity | |
| EP2478064A4 (en) | Composition and method for polishing bulk silicon | |
| EP2530706A4 (en) | Method for reclaiming semiconductor wafer and polishing composition | |
| EP2799587A4 (en) | Yttrium oxide coating film | |
| EP2580303A4 (en) | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates | |
| EP2758989A4 (en) | Composition and method for polishing aluminum semiconductor substrates | |
| SG10201605995SA (en) | Polishing Composition And Method For Producing Semiconductor Substrate | |
| EP2532029A4 (en) | Insulating metal substrate and semiconductor device | |
| EP2787527A4 (en) | Method for treating metallic oxide surface and method for preparing thin film transistor | |
| EP3033765A4 (en) | Silicon implantation in substrates and provision of silicon precursor compositions therefor | |
| TWI563556B (en) | Apparatus of etching glass substrate | |
| EP2546869A4 (en) | Semiconductor device, and process for manufacture of semiconductor device | |
| EP2273539A4 (en) | Method for formation of oxide film for silicon wafer |