CN115160933B - Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof - Google Patents
Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof Download PDFInfo
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- CN115160933B CN115160933B CN202210890529.XA CN202210890529A CN115160933B CN 115160933 B CN115160933 B CN 115160933B CN 202210890529 A CN202210890529 A CN 202210890529A CN 115160933 B CN115160933 B CN 115160933B
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- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 239000010941 cobalt Substances 0.000 title claims abstract description 50
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 50
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003112 inhibitor Substances 0.000 claims abstract description 20
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000008139 complexing agent Substances 0.000 claims abstract description 7
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000002253 acid Substances 0.000 claims abstract description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid group Chemical group C(C1=CC=CC=C1)(=O)O WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims abstract description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical group NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000108 ultra-filtration Methods 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 36
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000004471 Glycine Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 Titanium nitride Chemical class 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229960001716 benzalkonium Drugs 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- 229940105847 calamine Drugs 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- GICLSALZHXCILJ-UHFFFAOYSA-N ctk5a5089 Chemical compound NCC(O)=O.NCC(O)=O GICLSALZHXCILJ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- ZXOKVTWPEIAYAB-UHFFFAOYSA-N dioxido(oxo)tungsten Chemical compound [O-][W]([O-])=O ZXOKVTWPEIAYAB-UHFFFAOYSA-N 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052864 hemimorphite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000019605 sweet taste sensations Nutrition 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- CPYIZQLXMGRKSW-UHFFFAOYSA-N zinc;iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Fe+3].[Fe+3].[Zn+2] CPYIZQLXMGRKSW-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The invention relates to an alkaline polishing solution for cobalt CMP of a cobalt interconnection integrated circuit and a preparation method thereof. The polishing solution consists of the following components in percentage by mass: 1 to 8 weight percent of silica sol, 0.1 to 0.5 weight percent of complexing agent, 0.002 to 0.03 weight percent of inhibitor, 0.20 to 1.00 weight percent of oxidant and the balance of deionized water; the inhibitor is Benzoic Hydroxamic Acid (BHA). The PH value is 8-9, the corrosion to equipment is small, and the removal rate selection ratio of cobalt and titanium nitride is obviously improved; the method is simple and is suitable for industrial production.
Description
Technical Field
The invention relates to an alkaline polishing solution for the field of chip manufacturing and a preparation method thereof, in particular to an alkaline polishing solution for cobalt CMP of a cobalt interconnection integrated circuit and a preparation method thereof.
Background
Cu has the characteristics of low resistivity and strong electromigration resistance, and is widely used as an interconnection material in integrated circuits with the characteristic dimension of 65nm and below. However, cu has become increasingly inadequate as an interconnect material as technology nodes decrease to 10nm and below. Co has a smaller electron mean free path than Cu, resulting in lower resistivity of Co at feature sizes of 10nm and below; in addition, co can work with thinner barriers, which is beneficial for further feature size reduction. These advantages make Co a prime candidate interconnect material for Cu replacement and is applied by Intel corporation for M0, M1 layer interconnects.
The main requirements of the polishing solution for the CMP rough polishing of the cobalt interconnection structure are that cobalt and titanium nitride have high removal rate ratio and better surface quality after polishing. The main flow polishing solution for cobalt interconnection structure CMP at present mainly comprises silica sol, an oxidant, a complexing agent, a nonionic surfactant and an inhibitor. The inhibitor is mainly azole inhibitor mainly based on BTA, and the inhibitor has toxicity to human body and is easy to cause environmental pollution due to improper treatment.
Disclosure of Invention
The invention aims to provide an alkaline polishing solution for cobalt CMP of a cobalt interconnection integrated circuit and a preparation method thereof, aiming at the defects existing in the prior art. The polishing solution adopts (BHA) as an inhibitor, and can obtain good surface quality after polishing under the condition of very small dosage (only one ten thousandth is needed). The method is simple and is suitable for industrial production.
In order to solve the technical problems, the technical scheme of the invention is as follows:
an alkaline polishing solution for cobalt CMP of a cobalt interconnection integrated circuit comprises the following components in percentage by mass:
the sum of the component proportions is 100%.
The pH value of the alkaline polishing solution is 8.0-9.0;
the complexing agent is glycine;
the inhibitor is Benzoic Hydroxamic Acid (BHA);
the oxidant is hydrogen peroxide (H) 2 O 2 )。
The high-selectivity alkaline polishing solution for cobalt interconnection structure CMP coarse polishing has the advantages that the average particle size of silica sol is 60-70nm, the dispersity is +/-5%, and a filter element with a 100-micrometer pore diameter is used for ultrafiltration.
The preparation method of the alkaline polishing solution for cobalt CMP of the cobalt interconnection integrated circuit comprises the following steps:
adding silica sol, complexing agent, inhibitor and oxidant into deionized water according to the proportion, and stirring under vacuum negative pressure to obtain polishing solution.
Compared with the prior art, the invention has the beneficial effects that:
the polishing solution can effectively improve the selectivity of the removal rate during the CMP of cobalt interconnection; the polishing solution is alkalescent, the PH value is 8-9, and the corrosion to equipment is small; when in use, the surface quality of the polished wafer can be very good with a small amount; after polishing, the removal rate selection ratio of cobalt and titanium nitride is obviously improved, and the highest removal rate can reach 26.1; through electrochemical experiments, the addition of the BHA greatly reduces the static corrosion rate of the cobalt film, and the static corrosion rate without the addition of the BHA is thatMinimum +.>The very low static etch rate greatly reduces the likelihood of device defects; the polishing solution is simple to prepare and meets the requirement of industrial mass production; the method can improve the yield of the polished wafer surface, is easy to remove the inhibitor, provides great convenience for the cleaning link of the subsequent process flow, and effectively improves the surface quality of the wafer.
Drawings
FIG. 1 is an AFM image of a cobalt surface treated with 0.000g of BHA inhibitor polishing solution in example 1
FIG. 2 is an AFM image of a cobalt surface treated with 0.048g of BHA inhibitor slurry in example 2
FIG. 3 is an AFM image of a cobalt surface treated with 0.068g BHA inhibitor slurry in example 3
FIG. 4 is an AFM image of a cobalt surface treated with 0.274g of BHA inhibitor polishing solution in example 4
Detailed Description
The present invention will be described in further detail with reference to preferred embodiments, so that those skilled in the art can better understand the technical aspects of the present invention.
Example 1:
1000g of polishing solution is prepared:
taking 50g of abrasive silica sol (from Jin Wei group Co., ltd.) with the particle size of 60.0nm and the dispersity + -5% (5% of the mass percentage concentration of the polishing solution); 2.25g of glycine was added respectively; 16.7g of hydrogen peroxide (wherein, hydrogen peroxide (H) 2 O 2 ) The mass percentage concentration of the polishing solution is 30 percent, namely 5g is 0.5 percent of the mass percentage concentration of the polishing solution); deionized water is the balance, and the pH value of the polishing solution is 8; the preparation method comprises the following steps: sequentially adding silica sol, glycine and hydrogen peroxide into deionized water according to the component amounts, uniformly stirring by a vacuum negative pressure stirring mode, keeping the pH value at 8 by titrating potassium hydroxide in the stirring process, and finally supplementing the balance with deionized water and continuously and uniformly stirring.
And (3) test monitoring: the pH of the polishing solution is 8.0, and the particle size is 60.0nm.
Rate experiment: the prepared polishing solution is used in an Alpsitec-E460 type polishing machine, the working pressure is 1.5psi, the rotation speed of a polishing disc is 93 revolutions per minute, the rotation speed of a polishing head is 87 revolutions per minute, and the flow rate of the polishing solution is 300ml/min.
Cobalt and titanium nitride plates (purity: 99.99%) having a diameter of 3inch and a thickness of 2mm were polished, and the average removal rates of cobalt and titanium nitride were measured: cobalt isTitanium nitride is->The removal rate selection ratio was relatively low, 15.1. The cobalt film was immersed in a solution of the same composition but containing no silica sol, and the surface roughness of the cobalt film was large, as shown in fig. 1, to 10.4nm.
Example 2:
1000g of polishing solution is prepared:
taking 50g of abrasive silica sol, wherein the particle size of the abrasive silica sol is 60.0nm, the dispersity is +/-5%, and the concentration is 5%; glycine 2.25g; 16.7g of hydrogen peroxide (wherein, hydrogen peroxide (H) 2 O 2 ) The mass percentage concentration of (2) is 30%Namely 5g, which is 0.5 percent of the mass concentration of the polishing solution; 0.048006g of inhibitor (BHA); deionized water is the balance, and the pH value of the polishing solution is 8; the preparation method comprises the following steps: sequentially adding silica sol, glycine, BHA and hydrogen peroxide into deionized water according to the component amounts, uniformly stirring by a vacuum negative pressure stirring mode, keeping the pH value at 8 by titrating potassium hydroxide in the stirring process, and finally supplementing the balance with deionized water, and continuously uniformly stirring.
And (3) test monitoring: the pH of the polishing solution is 8.0, and the particle size is 60.0nm.
Rate experiment: the prepared polishing solution is used in an Alpsitec-E460 type polishing machine, the working pressure is 1.5psi, the rotation speed of a polishing disc is 93 revolutions per minute, the rotation speed of a polishing head is 87 revolutions per minute, and the flow rate of the polishing solution is 300ml/min.
Cobalt and titanium nitride plates (purity: 99.99%) having a diameter of 3inch and a thickness of 2mm were polished, and the average removal rates of cobalt and titanium nitride were measured: cobalt isTitanium nitride is->The removal rate selection ratio was relatively low, 18.3. The cobalt film was immersed with a solution of the same composition but containing no silica sol, and the surface roughness of the cobalt film was 8.64nm as shown in fig. 2.
Example 3:
other steps are the same as in example 2, except that 0.06857g of inhibitor (BHA);
after polishing, the average removal rate of cobalt, titanium nitride was measured: cobalt isTitanium nitride is->The removal rate selection ratio was relatively high, 22.8. The surface roughness of cobalt was 6.03nm as shown in fig. 3.
Example 4:
other steps are the same as in example 1, except that 0.27428g of inhibitor (BHA);
after polishing, the average removal rate of cobalt, titanium nitride was measured: cobalt isTitanium nitride is->The removal rate selection ratio was relatively low, 18.7. The surface roughness of cobalt was 7.96nm as shown in fig. 4.
From the above examples, it can be seen that the ratio obtained by optimization was low in the removal rate selection ratio and poor in the surface quality in experimental example 1 without adding BHA. When BHA was added, the removal rate selection ratio was increased and the surface quality was effectively improved, and experimental example 3 was the highest in selection ratio and the best in surface quality when 0.06857g was added. The addition of the BHA effectively protects the wafer, and is very beneficial to improving the yield of the wafer.
The working principle of the alkaline polishing solution used during cobalt interconnect structure CMP is as described above:
the silica sol (nano-scale silicon dioxide) is an abrasive, the hardness is moderate (Mohs hardness is 6-7), the dispersibility is good, the particle size is small, and the state of the polished wafer surface can be improved to a great extent. The silica sol is in a milky semitransparent shape, is a colloidal substance formed by diffusing silica colloid in pure water, is nontoxic and odorless, has little pollution to the environment, and is an ideal abrasive.
Glycine (glycine) is white crystal or crystalline powder, has sweet taste, has a melting point of 232-236 ℃, is soluble in water and insoluble in ethanol and diethyl ether, and is an effective complexing agent. Can carry out complex reaction with a plurality of metal ions such as copper, iron, cobalt and the like in acidic, neutral and alkaline solutions to form a soluble complex, thereby achieving the purpose of removing the oxide on the metal surface. The inhibitor, namely, the Benzalkonium Hydroxide (BHA), is a white crystalline solid and is often used as an effective collector of refractory minerals such as calamine, wolframite and the like. Has the functions of simultaneously inhibiting the corrosion of cobalt and titanium nitride and protecting the low-K dielectric layer. For oxygenChemical agent hydrogen peroxide (H) 2 O 2 ) The method is environment-friendly, pollution-free and low in price, and the decomposition products in the solution are only water and oxygen, so that the method has no other pollutants, does not introduce metal ions, is easy to clean after CMP, and is suitable for industrial production.
The above detailed description of the alkaline polishing solution for cobalt interconnection CMP rough polishing and the preparation method thereof with reference to the specific embodiments is illustrative and not restrictive, and several examples can be listed according to the defined scope, thus, variations and modifications without departing from the general inventive concept should fall within the scope of protection of the present invention.
The invention is not a matter of the known technology.
Claims (1)
1. The alkaline polishing solution for cobalt CMP of the cobalt interconnection integrated circuit is characterized by comprising the following components in percentage by mass:
the sum of the component proportions is 100%;
the complexing agent is glycine;
the inhibitor is Benzoic Hydroxamic Acid (BHA);
the oxidant is hydrogen peroxide (H) 2 O 2 )；
The average particle diameter of the silica sol is 60-70nm, the dispersity is +/-5%, and a filter element with a 100-micrometer pore diameter is used for ultrafiltration;
the pH value of the alkaline polishing solution is 8.0-9.0;
the preparation method of the alkaline polishing solution for cobalt CMP of the cobalt interconnection integrated circuit comprises the following steps:
sequentially adding silica sol, complexing agent, inhibitor, oxidant and deionized water according to the proportion, and stirring to obtain polishing solution.
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| CN1742066A (en) * | 2003-02-03 | 2006-03-01 | 卡伯特微电子公司 | Method of polishing a silicon-containing dielectric |
| CN103080256A (en) * | 2010-09-08 | 2013-05-01 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| CN103562337A (en) * | 2011-03-30 | 2014-02-05 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102304327A (en) * | 2011-07-05 | 2012-01-04 | 复旦大学 | Polishing solution based on metal Co for polishing process |
| CN104395989A (en) * | 2012-05-18 | 2015-03-04 | 高级技术材料公司 | Aqueous clean solution with low copper etch rate for organic residue removal improvement |
| CN107155367A (en) * | 2014-06-30 | 2017-09-12 | 恩特格里斯公司 | Aqueous and half aqueous cleaning agent of post-etch residues is removed using tungsten and cobalt compatibility |
| CN107109134A (en) * | 2014-12-22 | 2017-08-29 | 巴斯夫欧洲公司 | Chemically-mechanicapolish polish purposes of (CMP) composition in base material of the polishing comprising cobalt and/or cobalt alloy |
| KR20160126206A (en) * | 2015-04-23 | 2016-11-02 | 주식회사 케이씨텍 | Catalyst composition for tungsten polishing slurry and cmp slurry composition composition comprising the same |
| CN110520493A (en) * | 2017-04-17 | 2019-11-29 | 嘉柏微电子材料股份公司 | Self-stopping technology polishing composition and the method planarized for bulk oxide |
| CN109545736A (en) * | 2017-09-21 | 2019-03-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Cmp method for cobalt |
| CN109531282A (en) * | 2017-09-21 | 2019-03-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Cmp method for cobalt |
| CN109370439A (en) * | 2018-10-22 | 2019-02-22 | 河北工业大学 | For inhibiting the polishing slurries of copper cobalt barrier layer galvanic corrosion and cobalt surface pitting |
| CN113195698A (en) * | 2018-12-21 | 2021-07-30 | 恩特格里斯公司 | Compositions and methods for cleaning POST chemical mechanical polishing (POST-CMP) cobalt substrates |
| WO2022121821A1 (en) * | 2020-12-11 | 2022-06-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method therefor |
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