KR20160126206A - Catalyst composition for tungsten polishing slurry and cmp slurry composition composition comprising the same - Google Patents

Abstract

The present invention relates to a catalyst composition for tungsten polishing slurry, and to a chemical mechanical planarization (CMP) slurry composition including the same. According to one aspect of the present invention, the catalyst composition for tungsten polishing slurry includes a vanadium compound or a composite including the same. According to another aspect of the present invention, the CMP slurry composition includes: the catalyst composition for tungsten polishing slurry; a polishing particle; and an oxidizer.

Description

Technical Field [0001] The present invention relates to a catalyst composition for a tungsten polishing slurry, and a CMP slurry composition containing the catalyst composition for a tungsten polishing slurry.

The present invention relates to a catalyst composition for a tungsten polishing slurry and a CMP slurry composition comprising the same.

As the design rule of the product is reduced, the aspect ratio (depth / floor width) is rapidly increasing due to the narrow width and height of the structure, and the influence of the scratches generated in the conventional 50- It affects the process more than 2 times. As a result, the influence of topography as well as scratches on the surface of the film was also enhanced. The most important factors to be considered in the polishing process are the amount of polishing and the quality of the polishing surface. Recently, as the semiconductor design rule is reduced, the importance of the quality of the polishing surface is maximized.

As material changes from an aluminum gate to a tungsten gate, a polishing process for improving the quality of the polishing surface of tungsten, that is, for improving the topography, is being added. However, the conventional slurry compositions for tungsten polishing are optimized for the abrasive amount and the selectivity ratio with respect to the titanium and silicon oxide films, so that the slurry composition is designed. There has been a need for a topography improvement process without development of a slurry for topography improvement of a tungsten film. Commercially available products for topography improvement use large abrasive grains to improve the topography of the tungsten film, but have many disadvantages in terms of agglomeration and defects of the CMP slurry composition. Also, in the case of large abrasive particles, there is a high possibility of remaining as residual particles after polishing. In the case of such residual particles, a metal unetch problem occurs in an etching back process. Therefore, there is a growing demand for slurry development for the topography improvement of tungsten films and the use of new catalysts other than Fe ions and particulate type catalysts is required.

An object of the present invention is to provide a catalyst composition for a tungsten polishing slurry having excellent dispersion stability and excellent abrasive force against a tungsten film and a CMP slurry composition containing the same.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, there is provided a catalyst composition for a tungsten polishing slurry, comprising a vanadium compound or a composite comprising the vanadium compound.

The vanadium compound is a vanadium oxide, oxo vanadium peroxide, vanadium, di-peroxide vanadium chloride, vanadium sulfate, vanadium nitrate, vanadium phosphate, vanadium, are acid vanadium acetate, vanadium, Barnard acid, Barnard salts, bar or group- (VO ^+, VO ²⁺ ), and a complex comprising any one or more of these compounds.

The vanadyl group-containing compound may be at least one selected from the group consisting of vanadium oxychloride, vanadium oxysulfate, vanadyl sulfate, vanadyl oxalate compound, vanadium acetylacetonate, vanadium oxyacetylacetonate, oxotetra thiocyanatobanadium (IV) (IV) acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenesulfonic acid salts, oxobenzenesulfonic acid salts, (IV) oxide salt, oxodisulfato vanadium (IV) oxide salt, oxodisulfato vanadium (IV) oxide salt, oxo disulfate vanadium (IV) (IV), bis (acetylacetonate) oxovanadium (IV), bis (maltolate) oxovanadium (IV), bis (acetylacetonato) vanadium IV), bis (koeito) (IV), bis (3-oxy-1,2-dimethyl-4-pyridinonato) -oxovanadium (IV) (2'-oxyphenyl) -2-oxazolinato] -oxovanadium (IV), bis [2- (2'-oxophenyl) (IV), bis (benzohydroxametho) -methoxy-oxovanadium (V), bis (trifluoromethanesulfonyl) -2-thiazolinato] -oxovanadium (IV), bis (ethyl maltolato) oxovanadium (IV), oxovanadium (IV) biguanide, oxo (vanadium) oxo vanadium Vanadium (IV) metformin, and oxovanadium (IV) phenformin.

According to a second aspect of the present invention, there is provided a catalyst composition for a tungsten polishing slurry according to the first aspect of the present invention; Abrasive particles; And an oxidizing agent.

The catalyst composition for the tungsten polishing slurry may be 0.01 wt% to 5 wt% of the CMP slurry composition.

The abrasive grains may be surface-modified with metal ions.

The metal ion may be at least one selected from the group consisting of Fe, Al, As, Ga, B, Ber, C, Cr, (Ti), vanadium (V), zinc (Zn), and zirconium (Zr), in addition to the elements selected from the group consisting of indium (In), magnesium (Mg), manganese Or at least one of them.

The metal ion may be included in an amount of 0.0001 to 0.01 part by weight based on 100 parts by weight of the abrasive grains.

Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.

The abrasive grain size may be from 20 nm to 250 nm.

The abrasive particles may have a zeta potential of -30 mV to -60 mV or +30 mV to +60 mV.

The abrasive grains may be 0.5 wt% to 10 wt% of the CMP slurry composition.

The oxidizing agent may be at least one selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodate, periodate, perchlorate, perchlorate, perbromate, perbromate, perborate, perborate, permanganate, permanganate, persulfate, At least one selected from the group consisting of chlorates, chlorites, chromates, iodates, iodic acid, ammonium peroxodisulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and peroxide elements, The oxidizing agent may be 0.005 wt% to 5 wt% of the CMP slurry composition.

An inorganic acid or an inorganic acid salt containing at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid and salts thereof; And organic acids such as formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, And at least one pH adjusting agent selected from the group consisting of organic acids or organic acid salts comprising at least one selected from the group consisting of glycolic acid, lactic acid, aspartic acid, tartaric acid and salts thereof.

The pH of the CMP slurry composition may be in the range of 2 to 5.

The CMP slurry composition may be to improve the topography of tungsten.

The polished surface of tungsten using the CMP slurry composition may have a peak to valley (PV) value of 100 nm or less and a surface roughness of 10 nm or less.

The CMP slurry composition may be excellent in dispersion stability in the range of pH 2 to 5.

Since the catalyst composition for a tungsten polishing slurry of the present invention includes a vanadium compound or a complex containing the vanadium compound, the dissolution rate is low and a slow catalytic reaction is caused. Therefore, it is possible to control the tungsten polishing amount and to provide excellent dispersion stability in an acidic range . The CMP slurry composition of the present invention contains a catalyst composition for a tungsten polishing slurry containing a vanadium compound or a complex containing the vanadium compound, Chemical reactions can be controlled. Further, it is possible to improve the tungsten polishing rate and to improve the tungsten topography, thereby improving the yield caused by the metal short and etch failures caused by the topography during tungsten polishing, and enabling the next generation high integration process.

FIG. 1 is a graph showing the results of measurement of potentiostats of the CMP slurry compositions of Examples and Comparative Examples 1 and 2 of the present invention. FIG.
2 is a graph showing the tungsten polishing rate after wafer polishing using the CMP slurry composition of Examples of the present invention and Comparative Examples 1 and 2.
FIG. 3 is a photograph showing the topography and roughness values of a tungsten surface after wafer polishing using the CMP slurry composition of Examples of the present invention and Comparative Examples 1 and 2. FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Hereinafter, the catalyst composition for a tungsten polishing slurry of the present invention and the CMP slurry composition containing the same will be described in detail with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.

According to a first aspect of the present invention, there is provided a catalyst composition for a tungsten polishing slurry, comprising a vanadium compound or a composite comprising the vanadium compound.

The vanadium compound may be a compound in which the oxidation number of vanadium is trivalent (III), quadrivalent (IV) or pentavalent (V), and preferably a compound having a quadrivalent (IV) or pentavalent .

Specifically, vanadium oxide, oxo vanadium peroxide, vanadium, di-peroxide vanadium chloride, vanadium sulfate, vanadium nitrate, vanadium phosphate, vanadium, are acid vanadium acetate, vanadium, Barnard acid, Barnard salts, bar or group- (VO ^+, VO ²⁺ ), and a complex comprising any one or more of these compounds.

Among them, it is preferable to use a compound containing vanadyl group (VO ⁺ , VO ²⁺ ), vanadium peroxide, vanadium peroxide and a mixture thereof. Specifically, examples of the compound containing a vanadyl group include vanadium oxychloride, vanadium oxysulfate, vanadyl sulfate, vanadyl oxalate compound, vanadium acetylacetonate, vanadium oxyacetylacetonate, oxotetra thiocyanato vanadium (IV) , Oxohexachloro vanadium (IV) acid salt, oxo hexachlorobanadium (IV) acid salt, oxotetrachlorobenzium (IV) acid salt, oxotetrafluorovanadium (IV) acid salt, oxopentafluorovanadium (IV) acid salts, dioxo dioxalato vanadium (IV) acid salts, dioxo dioxalato vanadium (V) acid salts, oxodisulfato vanadium (IV) (IV) acid salt, dioxotrioxalato vanadium (IV) acid salt, bis (acetylacetonate) oxovanadium (IV), bis (maltolate) Oxovanadium (IV), bis Oxo-vanadium (IV), bis (3-oxy-1,2-dimethyl-4-pyridinonato) (IV), bis [2- (2'-oxy-phenyl) -2-oxazolinato] oxovanadium (IV) (IV), bis (benzohydroxamate) -oxovanadium (IV), bis (benzohydroxamate) -methoxy-oxovanadium (V) ), Bis (benzohydroxamate) -ethoxooxabanadium (V), bis (salicylaldehyde) -oxovanadium (IV), bis (ethylmaltolato) oxovanadium (IV) (IV) metformin, and oxovanadium (IV) phenformin. The present invention also relates to a method for preparing the same.

The catalyst composition for a tungsten polishing slurry of the present invention has a low corrosion potential (Ecorr) value as compared with a conventional Fe-containing catalyst because it contains a vanadium compound or a composite containing the vanadium compound, but the dissolution rate is low It is possible to control the amount of tungsten abrasive because it causes a slow catalytic reaction.

According to a second aspect of the present invention, there is provided a catalyst composition for a tungsten polishing slurry according to the first aspect of the present invention; Abrasive particles; And an oxidizing agent.

The CMP slurry composition of the present invention can control the electrochemical reaction between a CMP slurry composition and a tungsten surface by including a catalyst composition for a tungsten polishing slurry comprising a vanadium compound or a composite comprising the same. Further, it is possible to improve the tungsten polishing rate and improve the surface roughness of tungsten, thereby improving the yield caused by metal short and etch failure during tungsten polishing, and enabling a next-generation high integration process.

The catalyst composition for the tungsten polishing slurry may be 0.01 wt% to 5 wt% of the CMP slurry composition. When the catalyst composition for the tungsten polishing slurry is less than 0.01 wt%, the polishing rate for the tungsten film may be lowered. When the catalyst composition for the tungsten polishing slurry is more than 5 wt%, the oxide film grows on the tungsten film, .

Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, Titania, barium titania, germania, manganese, and magnesia. The colloidal silica may be at least one selected from the group consisting of colloidal silica.

The abrasive grain size may be 20 nm to 250 nm, preferably 50 nm to 180 nm. If the size of the abrasive grains is less than 20 nm, small particles are excessively generated, and detergency is lowered, excessive defects are generated on the wafer surface, and the polishing rate is lowered. It is difficult to control dishing, surface defects, polishing rate, and selection ratio.

The abrasive grains may be used by mixing particles having different particle sizes. Particles of two or more different sizes among the particles having a size of 20 nm to 250 nm may be selected and mixed to be an average particle size of 50 nm to 180 nm It can be done.

The abrasive particles may have a zeta potential of -30 mV to -60 mV or +30 mV to +60 mV. An absolute value of the zeta potential is also exhibited in the acidic region, whereby the dispersion stability is high and an excellent polishing force can be realized.

The abrasive grains may be 0.5 wt% to 10 wt% of the CMP slurry composition. When the content of the abrasive grains in the CMP slurry composition is less than 0.5% by weight, the polishing target film, for example, tungsten may not be sufficiently polished during polishing and the planarization rate may be lowered. When the content exceeds 10% Scratches and the like.

The shape of the abrasive particles may be at least one selected from the group consisting of spherical, angular, needle-like, and plate-like shapes.

The abrasive grains may be surface-modified with metal ions. By using abrasive particles surface-modified with metal ions, dispersion stability can be maintained in the acidic region.

The metal ion may have a tetrahedral coordination and may include, for example, Fe, Al, As, Ga, Boron, Be, (Cr), hafnium (Hf), indium (In), magnesium (Mg), manganese (Mn), nickel (Ni), phosphorus (P), titanium (Ti) , Zinc (Zn), and zirconium (Zr).

The metal ion may be included in an amount of 0.0001 to 0.01 part by weight based on 100 parts by weight of the abrasive grains. The metal ion can surface-modify the abrasive particles even in a very small amount. If the amount of the metal ion is less than 0.0001 parts by weight, no catalytic activity occurs. If the amount exceeds 0.01 parts by weight, a metal impurity issue of the entire slurry may occur.

Wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodate, periodate, perchlorate, perchlorate, perbromate, perbromate, perborate, perborate, permanganate, permanganate, persulfate, At least one selected from the group consisting of chlorine, chlorite, chromate, iodate, iodate, ammonium peroxodisulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and peroxide have.

The oxidizing agent may be 0.005 wt% to 5 wt%, preferably 0.05 wt% to 1 wt%, of the CMP slurry composition. If the oxidizing agent is less than 0.005% by weight, the polishing rate and etching rate for the tungsten film may be lowered. If the oxidizing agent is more than 5% by weight, the oxide film on the tungsten surface may become hard, The oxide film grows, and the erosion and erosion of the metal may cause the topography to have poor characteristics.

The CMP slurry composition of the present invention may further comprise a pH adjuster as a material used to prevent corrosion of the metal or the abrasive machine and to realize a pH range where metal oxidation easily occurs and the pH adjuster may be nitric acid, An inorganic acid or an inorganic acid salt containing at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, bromic acid, iodic acid and salts thereof; And organic acids such as formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, An organic acid or an organic acid salt containing at least one selected from the group consisting of glycolic acid, lactic acid, aspartic acid, tartaric acid and salts thereof.

The pH of the CMP slurry composition according to the present invention is preferably adjusted to provide dispersion stability and proper polishing rate depending on the abrasive grain and the pH of the CMP slurry composition may be in the range of pH of 2 to 5 .

The CMP slurry composition can be used to polish a tungsten film and improve the topography of tungsten.

The polished surface of tungsten using the CMP slurry composition may have a peak to valley (PV) value of 100 nm or less and a surface roughness of 10 nm or less. The peak-to-valley value and the degree of surface roughness can be measured with an atomic force microscope.

The CMP slurry composition exhibits a high zeta potential absolute value even in an acidic range of pH 2 to 5, and therefore can exhibit excellent dispersion stability and excellent abrasive force.

Hereinafter, the present invention will be described in detail with reference to the following examples and comparative examples. However, the technical idea of the present invention is not limited or limited thereto.

[Example]

(1) Preparation of abrasive grain solution

A high purity silica particle based on water glass having a broad size distribution with an average particle size of 40 to 100 nm was surface-modified with metal ions (Fe, Al, V, Pr ions) . Ultra pure water was added to the abrasive particles at 300 rpm under agitation to prepare an abrasive grain solution having a solid content of 3.5 wt%.

(2) Preparation of catalyst composition

As the solution 1, vanadium pentoxide (V ₂ O ₅ ) was diluted with ultrapure water and stirred at 85 ° C to prepare a solution. As the solution 2, a solution prepared by diluting the vanadyl sulfate to the concentration of the solution 1 was prepared. Next, a solution of phosphate buffer and ammonia was added to solution 1 to add hydrogen peroxide while maintaining the pH at 10, and then, a diperoxovanadium compound was synthesized. After stirring for 12 hours and cooling at room temperature, nitric acid was added to adjust the pH to an acidic area of 2.5. Finally, Solution 2 was added to prepare a mixture of dipiperoxovanadium compound (IV) and vanadyl sulfate (IV).

(3) Preparation of polishing slurry composition

To the abrasive grain solution having a solids content of 3.5% by weight, the catalyst composition was added in an amount of 0.01% by weight in the entire CMP slurry composition. Hydrogen peroxide (H ₂ O ₂ ) as an oxidizing agent was added to 0.5 wt% of the total CMP slurry composition and nitric acid (HNO ₃ ) was added as a pH adjusting agent to adjust the pH of the CMP slurry composition to 2.5. The mixture was stirred for 8 hours and then filtered using a filter having a pore size of 0.5 mu m to prepare a polishing slurry composition.

[Comparative Example 1]

A polishing slurry composition was prepared in the same manner as in Example 1, except that iron nitrate was used as the catalyst composition.

[Comparative Example 2]

A polishing slurry composition was prepared in the same manner as in Example 1, except that the catalyst composition was not included.

Using the CMP slurry compositions of Examples and Comparative Examples 1 and 2, the tungsten-containing wafers were polished under the following polishing conditions.

[Polishing condition]

1. Polishing equipment: KCT 200 mm

2. Polishing pad: IC1000 (DOW)

3. Platen speed: 60 rpm

4. Spindle speed: 65 rpm

5. Pressure: 3 psi

6. Flow rate: 200 ml / min

7. Slurry solids content: 3.5 wt%

8. Wafer: Tungsten: A blanket wafer in which titanium nitride (TiN) and tungsten were sequentially deposited on a polycrystalline silicon substrate (200 mm) in the order of 50 nm and 5000 nm, respectively

Table 1 below shows the physical properties of the CMP slurry compositions of Examples and Comparative Examples 1 and 2.

unit Comparative Example 1 Comparative Example 2 Example particle - Colloidal
Silica Colloidal
Silica Colloidal silica catalyst - Iron nitrate - The diperoxovanadium compound and
Vanadyl sulfate mixture Particle size nm 148.2 96.65 94.3 Zeta potential mV + 6.77 -50.3 -43 content % 3.78 3.51 3.52 pH - 2.24 2.56 2.51 conductivity ㎲ 9,960 1,280 1,783 Corrosion potential
(Ecorr) mV 206 78 128 Corrosion current density
(Icorr) Log (㎂ / cm ² ) 687 461 233

Referring to Table 1, since the zeta potential value of the abrasive grains in the CMP slurry composition of the embodiment is a high negative value, an absolute zeta potential absolute value appears even in the acidic region, whereby the dispersion stability is high and excellent abrasive force can be realized. As a result of the measurement of the potentiostats, it was confirmed that the catalyst had a lower corrosive potential (Ecorr) than that of Comparative Example 1 in which the iron nitrate catalyst was added but could act as a catalyst. In the case of the corrosion current density (Icorr) value, the CMP slurry compositions of Examples 1 and 2 had the lowest values in the CMP slurry compositions of Examples and Comparative Examples 1 and 2, and the CMP slurry compositions of Comparative Examples 1 and 2 had a CMP It can be understood that the surface etching after the etching can be relatively suppressed.

FIG. 1 is a graph showing the results of measurement of potentiostats of the CMP slurry compositions of Examples and Comparative Examples 1 and 2 of the present invention. FIG. Referring to FIG. 1, it can be seen that the corrosion potential (Ecorr) of the CMP slurry composition of the Example is improved compared to the CMP slurry composition of Comparative Example 2 in which no catalyst is added.

FIG. 2 is a graph showing the tungsten polishing rate after wafer polishing using the CMP slurry composition of the example of the present invention and Comparative Examples 1 and 2. FIG. 3 is a graph showing the polishing rate of the CMP slurry composition of the embodiment of the present invention, , Which is a photograph showing the topography and roughness of the tungsten surface after wafer polishing. Referring to FIG. 2, it can be seen that the embodiment shows a higher polishing amount as compared with Comparative Example 2. This indicates that the addition of the catalyst containing vanadium pentoxide and vanadyl sulfate according to the embodiment of the present invention to the slurry composition having the same composition as that of Comparative Example 2 results in an increase in the removal rate and is possible to catalyze the tungsten membrane. 2, the polishing rate of Comparative Example 1 and Example is slightly lower than that of Comparative Example 1. However, as shown in the results of FIG. 3, the surface of Comparative Example 1 and the surface of Example The roughness degree of Rpv is equal to that of Rpv. Thus, it can be seen that the polishing rate of the example is relatively low as compared with the comparative example 1, but the CMP polishing slurry composition of the embodiment is excellent in the improvement of the tungsten topography.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.

Claims (18)

A vanadium compound or a composite comprising the vanadium compound.
The method according to claim 1,
The vanadium compound is a vanadium oxide, oxo vanadium peroxide, vanadium, di-peroxide vanadium chloride, vanadium sulfate, vanadium nitrate, vanadium phosphate, vanadium, are acid vanadium acetate, vanadium, Barnard acid, Barnard salts, bar or group- (VO ^+, VO ²⁺ ), and a composite comprising any one or more of these compounds. The catalyst composition for a tungsten polishing slurry according to claim 1,
3. The method of claim 2,
The vanadyl group-containing compound may be at least one selected from the group consisting of vanadium oxychloride, vanadium oxysulfate, vanadyl sulfate, vanadyl oxalate compound, vanadium acetylacetonate, vanadium oxyacetylacetonate, oxotetra thiocyanatobanadium (IV) (IV) acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenecarboxylic acid salts, oxobenzenesulfonic acid salts, oxobenzenesulfonic acid salts, (IV) oxide salt, oxodisulfato vanadium (IV) oxide salt, oxodisulfato vanadium (IV) oxide salt, oxo disulfate vanadium (IV) (IV), bis (acetylacetonate) oxovanadium (IV), bis (maltolate) oxovanadium (IV), bis (acetylacetonato) vanadium IV), bis (koeito) (IV), bis (3-oxy-1,2-dimethyl-4-pyridinonato) -oxovanadium (IV) (2'-oxyphenyl) -2-oxazolinato] -oxovanadium (IV), bis [2- (2'-oxophenyl) (IV), bis (benzohydroxametho) -methoxy-oxovanadium (V), bis (trifluoromethanesulfonyl) -2-thiazolinato] -oxovanadium (IV), bis (ethyl maltolato) oxovanadium (IV), oxovanadium (IV) biguanide, oxo (vanadium) oxo vanadium Vanadium (IV) metformin, and oxovanadium (IV) phenformin. 2. The catalyst composition for tungsten polishing slurry according to claim 1, wherein at least one selected from the group consisting of vanadium (IV)
A catalyst composition for a tungsten polishing slurry according to any one of claims 1 to 3;
Abrasive particles; And
Oxidant;
≪ / RTI >
5. The method of claim 4,
Wherein the catalyst composition for the tungsten polishing slurry is 0.01 wt% to 5 wt% of the CMP slurry composition.
5. The method of claim 4,
Wherein the abrasive grains are surface-modified with metal ions.
5. The method of claim 4,
The metal ion may be at least one selected from the group consisting of Fe, Al, As, Ga, B, Ber, C, Cr, (Ti), vanadium (V), zinc (Zn), and zirconium (Zr), in addition to the elements selected from the group consisting of indium (In), magnesium (Mg), manganese At least one of the two or more of the CMP slurry compositions.
5. The method of claim 4,
Wherein the metal ion is contained in an amount of 0.0001 to 0.01 part by weight based on 100 parts by weight of the abrasive grains.
5. The method of claim 4,
The above-
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.
CMP slurry composition.
5. The method of claim 4,
Wherein the abrasive grain size is from 20 nm to 250 nm.
5. The method of claim 4,
Wherein the abrasive particles have a zeta potential of -30 mV to -60 mV or +30 mV to +60 mV.
5. The method of claim 4,
Wherein the abrasive grains are 0.5% to 10% by weight of the CMP slurry composition.
5. The method of claim 4,
Preferably,
Hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodate, periodate, perchlorate, perchlorate, perbromate, perbromate, perborate, perborate, permanganate, permanganate, persulfate, bromate, chlorate, chlorite At least one selected from the group consisting of chromium salts, iodates, iodic acid, ammonium peroxodisulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and peroxide elements,
Wherein the oxidizing agent is 0.005 wt% to 5 wt% of the CMP slurry composition.
CMP slurry composition.
5. The method of claim 4,
An inorganic acid or an inorganic acid salt containing at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid and salts thereof; And
But are not limited to, formic, malonic, maleic, oxalic, acetic, adipic, citric, adipic, acetic, propionic, fumaric, lactic, salicylic, pimelic, benzoic, succinic, An organic acid or an organic acid salt containing at least any one selected from the group consisting of acid, lactic acid, aspartic acid, tartaric acid and salts thereof;
At least one pH adjusting agent selected from the group consisting of:
5. The method of claim 4,
Wherein the pH of the CMP slurry composition is in the range of 2 to 5.
5. The method of claim 4,
Wherein the CMP slurry composition improves the topography of tungsten.
5. The method of claim 4,
Wherein the polished surface of the tungsten using the CMP slurry composition has a peak to valley (PV) value of 100 nm or less and a surface roughness of 10 nm or less.
5. The method of claim 4,
Wherein the CMP slurry composition is excellent in dispersion stability in the pH 2 to 5 range.

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